CN102439741A - 发光二极管装置 - Google Patents

发光二极管装置 Download PDF

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Publication number
CN102439741A
CN102439741A CN2010800015952A CN201080001595A CN102439741A CN 102439741 A CN102439741 A CN 102439741A CN 2010800015952 A CN2010800015952 A CN 2010800015952A CN 201080001595 A CN201080001595 A CN 201080001595A CN 102439741 A CN102439741 A CN 102439741A
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China
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semiconductor layer
light
electrical semiconductor
metal electrode
layer
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CN2010800015952A
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CN102439741B (zh
Inventor
刘文煌
单立伟
朱振甫
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XUMING PHOTOELECTRICITY Inc
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XUMING PHOTOELECTRICITY Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

一种高亮度的垂直型发光二极管装置(300)，包括依次沉积的镜面反射层(306)，第一电性半导体层(304)，活化层(303)，第二电性半导体层(302)，第二金属电极(301)。第二金属电极(301)两侧分别为高光照射侧(301′)和低光照射侧(301″)。低光照射侧(301″)位于镜面反射层(306)的范围之外。且镜面反射层(306)与第一电性半导体(304)之间接触的面积占第一电性半导体层(304)的面积的75％以上。该结构可以增进电流分散能力，减少金属电极吸光，提高亮度和效率。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN2010800015952A 2009-11-06 2010-11-01 发光二极管装置 Active CN102439741B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW098137664A TWI412161B (zh) 2009-11-06 2009-11-06 發光二極體裝置
PCT/IB2010/002774 WO2011055202A2 (zh) 2009-11-06 2010-11-01 发光二极体装置

Publications (2)

Publication Number Publication Date
CN102439741A true CN102439741A (zh) 2012-05-02
CN102439741B CN102439741B (zh) 2013-10-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800015952A Active CN102439741B (zh) 2009-11-06 2010-11-01 发光二极管装置

Country Status (7)

Country Link
US (2) US8450758B2 (zh)
EP (1) EP2498307A4 (zh)
JP (1) JP2013508994A (zh)
KR (1) KR101250964B1 (zh)
CN (1) CN102439741B (zh)
TW (1) TWI412161B (zh)
WO (1) WO2011055202A2 (zh)

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CN102709446A (zh) * 2012-06-18 2012-10-03 东莞市大亮光电有限公司 一种小功率直插式led
CN103456859A (zh) * 2013-09-05 2013-12-18 深圳市智讯达光电科技有限公司 倒装led芯片的反射层结构及倒装led芯片
CN103975451A (zh) * 2012-07-18 2014-08-06 世迈克琉明有限公司 制造半导体发光器件的方法
CN107851688A (zh) * 2015-08-07 2018-03-27 Lg伊诺特有限公司 发光二极管及发光二极管封装
CN108365065A (zh) * 2017-01-26 2018-08-03 晶元光电股份有限公司 发光元件

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TWI412161B (zh) 2009-11-06 2013-10-11 Semileds Optoelectronics Co 發光二極體裝置
US9847372B2 (en) * 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
CN104040734B (zh) * 2012-01-10 2018-07-20 亮锐控股有限公司 通过选择性区域粗糙化控制的led光输出
CN103383986A (zh) * 2012-05-04 2013-11-06 旭明光电股份有限公司 具有波长转换层的发光二极管晶粒及其制造方法
US9530941B2 (en) 2012-07-18 2016-12-27 Semicon Light Co., Ltd. Semiconductor light emitting device
JP5734935B2 (ja) * 2012-09-20 2015-06-17 株式会社東芝 半導体装置及びその製造方法
US9748511B2 (en) * 2013-05-23 2017-08-29 Oledworks Gmbh Light-emitting device with alternating arrangement of anode pads and cathode pads
US9419185B2 (en) 2014-01-27 2016-08-16 Glo Ab Method of singulating LED wafer substrates into dice with LED device with Bragg reflector
JP2016072479A (ja) 2014-09-30 2016-05-09 日亜化学工業株式会社 発光素子
KR102425124B1 (ko) * 2015-08-24 2022-07-26 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 발광소자 패키지
US10615094B2 (en) * 2017-01-28 2020-04-07 Zhanming LI High power gallium nitride devices and structures
TWI773587B (zh) * 2021-11-17 2022-08-01 友達光電股份有限公司 燈板

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102709446A (zh) * 2012-06-18 2012-10-03 东莞市大亮光电有限公司 一种小功率直插式led
CN103975451A (zh) * 2012-07-18 2014-08-06 世迈克琉明有限公司 制造半导体发光器件的方法
CN103975451B (zh) * 2012-07-18 2016-10-12 世迈克琉明有限公司 制造半导体发光器件的方法
CN103456859A (zh) * 2013-09-05 2013-12-18 深圳市智讯达光电科技有限公司 倒装led芯片的反射层结构及倒装led芯片
CN107851688A (zh) * 2015-08-07 2018-03-27 Lg伊诺特有限公司 发光二极管及发光二极管封装
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CN108365065A (zh) * 2017-01-26 2018-08-03 晶元光电股份有限公司 发光元件
CN108365065B (zh) * 2017-01-26 2021-07-13 晶元光电股份有限公司 发光元件

Also Published As

Publication number Publication date
US10862013B2 (en) 2020-12-08
US8450758B2 (en) 2013-05-28
EP2498307A2 (en) 2012-09-12
TW201117422A (en) 2011-05-16
US20110114966A1 (en) 2011-05-19
KR101250964B1 (ko) 2013-04-05
WO2011055202A2 (zh) 2011-05-12
KR20120099669A (ko) 2012-09-11
TWI412161B (zh) 2013-10-11
CN102439741B (zh) 2013-10-23
WO2011055202A3 (zh) 2011-09-01
JP2013508994A (ja) 2013-03-07
EP2498307A4 (en) 2013-12-18
US20130277702A1 (en) 2013-10-24

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