CN103975451A - 制造半导体发光器件的方法 - Google Patents
制造半导体发光器件的方法 Download PDFInfo
- Publication number
- CN103975451A CN103975451A CN201380004186.1A CN201380004186A CN103975451A CN 103975451 A CN103975451 A CN 103975451A CN 201380004186 A CN201380004186 A CN 201380004186A CN 103975451 A CN103975451 A CN 103975451A
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- Prior art keywords
- electrode
- light emitting
- semiconductor device
- semiconductor layer
- emitting semiconductor
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (19)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120078274A KR101363496B1 (ko) | 2012-07-18 | 2012-07-18 | 반도체 발광소자의 제조 방법 |
KR10-2012-0078274 | 2012-07-18 | ||
KR10-2012-0083092 | 2012-07-30 | ||
KR1020120083092A KR101370576B1 (ko) | 2012-07-30 | 2012-07-30 | 반도체 발광소자 |
KR1020120098261A KR101403632B1 (ko) | 2012-09-05 | 2012-09-05 | 반도체 발광소자 |
KR1020120098411A KR101403639B1 (ko) | 2012-09-05 | 2012-09-05 | 반도체 발광소자 |
KR10-2012-0098407 | 2012-09-05 | ||
KR1020120098256A KR101403630B1 (ko) | 2012-09-05 | 2012-09-05 | 반도체 발광소자 |
KR10-2012-0098261 | 2012-09-05 | ||
KR1020120098407A KR101403636B1 (ko) | 2012-09-05 | 2012-09-05 | 반도체 발광소자 |
KR10-2012-0098420 | 2012-09-05 | ||
KR1020120098420A KR101427316B1 (ko) | 2012-09-05 | 2012-09-05 | 반도체 발광소자 |
KR10-2012-0098256 | 2012-09-05 | ||
KR10-2012-0098411 | 2012-09-05 | ||
KR1020120100793A KR101405449B1 (ko) | 2012-09-12 | 2012-09-12 | 반도체 발광소자 |
KR10-2012-0100793 | 2012-09-12 | ||
KR10-2013-0002947 | 2013-01-10 | ||
KR1020130002947A KR101446732B1 (ko) | 2013-01-10 | 2013-01-10 | 반도체 발광소자 |
PCT/KR2013/006457 WO2014014298A1 (ko) | 2012-07-18 | 2013-07-18 | 반도체 발광소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103975451A true CN103975451A (zh) | 2014-08-06 |
CN103975451B CN103975451B (zh) | 2016-10-12 |
Family
ID=49949056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380004186.1A Active CN103975451B (zh) | 2012-07-18 | 2013-07-18 | 制造半导体发光器件的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9236524B2 (zh) |
EP (1) | EP2782147B1 (zh) |
CN (1) | CN103975451B (zh) |
WO (1) | WO2014014298A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107863425A (zh) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | 一种具有高反射电极的led芯片及其制作方法 |
US10056429B2 (en) | 2014-05-19 | 2018-08-21 | Epistar Corporation | Electrode structure of optoelectronic device |
TWI638468B (zh) * | 2014-05-19 | 2018-10-11 | 晶元光電股份有限公司 | 光電元件及其製造方法 |
CN112117358A (zh) * | 2020-09-22 | 2020-12-22 | 宁波天炬光电科技有限公司 | 单芯片大功率led芯片结构 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2782149B1 (en) | 2012-07-18 | 2022-10-19 | Semicon Light Co., Ltd. | Semiconductor light-emitting device |
US9530941B2 (en) | 2012-07-18 | 2016-12-27 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
JP6236999B2 (ja) | 2013-08-29 | 2017-11-29 | 日亜化学工業株式会社 | 発光装置 |
JP6387780B2 (ja) | 2013-10-28 | 2018-09-12 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
EP2950358B1 (en) * | 2014-05-29 | 2021-11-17 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package |
WO2015186972A1 (ko) | 2014-06-03 | 2015-12-10 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
CN106663734B (zh) * | 2014-06-10 | 2019-06-14 | 世迈克琉明有限公司 | 半导体发光元件 |
KR102019914B1 (ko) | 2014-06-11 | 2019-11-04 | 엘지이노텍 주식회사 | 발광 소자 |
JP6529223B2 (ja) * | 2014-06-30 | 2019-06-12 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 光電部品 |
KR20160051394A (ko) * | 2014-11-03 | 2016-05-11 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
KR101646666B1 (ko) | 2015-03-26 | 2016-08-08 | 엘지이노텍 주식회사 | 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치 |
US10158047B2 (en) | 2015-04-03 | 2018-12-18 | Semicon Light Co., Ltd. | Semiconductor light emitting device |
US10147849B2 (en) * | 2015-05-05 | 2018-12-04 | Xiangneng Hualei Optoelectronic Co., Ltd | Manufacturing method of flip-chip structure of group III semiconductor light emitting device |
KR20170005317A (ko) * | 2015-07-03 | 2017-01-12 | 삼성전자주식회사 | 반도체 발광소자 |
TWI591849B (zh) * | 2015-11-27 | 2017-07-11 | 隆達電子股份有限公司 | 半導體發光結構及其半導體封裝結構 |
KR102266960B1 (ko) * | 2016-03-02 | 2021-06-18 | 한국전자통신연구원 | 쇼트키 다이오드 및 이의 제조 방법 |
US9966502B2 (en) * | 2016-04-01 | 2018-05-08 | Epistar Corporation | Light-emitting device |
KR102611980B1 (ko) | 2016-12-14 | 2023-12-08 | 삼성전자주식회사 | 멀티 컬러를 구현할 수 있는 발광 소자 |
KR102598043B1 (ko) | 2017-01-12 | 2023-11-06 | 삼성전자주식회사 | 플로팅 도전성 패턴을 포함하는 반도체 발광 소자 |
WO2018164371A1 (ko) * | 2017-03-08 | 2018-09-13 | 엘지이노텍 주식회사 | 반도체 소자 및 반도체 소자 패키지 |
DE102018101700A1 (de) | 2018-01-25 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
JP6843916B2 (ja) * | 2019-05-14 | 2021-03-17 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 光電部品 |
DE102019120444A1 (de) * | 2019-07-29 | 2021-02-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
JP7223046B2 (ja) * | 2021-02-24 | 2023-02-15 | 晶元光電股▲ふん▼有限公司 | 光電部品 |
JP7185105B1 (ja) * | 2021-07-16 | 2022-12-06 | シチズン電子株式会社 | 発光装置 |
WO2023286846A1 (ja) * | 2021-07-16 | 2023-01-19 | シチズン電子株式会社 | 発光装置 |
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WO2009010762A1 (en) * | 2007-07-19 | 2009-01-22 | Photonstar Led Limited | Vertical led with conductive vias |
JP2011138820A (ja) * | 2009-12-25 | 2011-07-14 | Nichia Corp | 発光素子 |
CN102439741A (zh) * | 2009-11-06 | 2012-05-02 | 旭明光电股份有限公司 | 发光二极管装置 |
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JPH1174559A (ja) | 1997-08-28 | 1999-03-16 | Fuji Photo Film Co Ltd | 半導体発光素子および露光装置 |
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WO2014014298A1 (ko) | 2014-01-23 |
EP2782147A1 (en) | 2014-09-24 |
EP2782147A4 (en) | 2015-08-05 |
EP2782147B1 (en) | 2020-03-11 |
CN103975451B (zh) | 2016-10-12 |
US9236524B2 (en) | 2016-01-12 |
US20150155426A1 (en) | 2015-06-04 |
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