TW200601575A - A high efficiency light emitting device - Google Patents

A high efficiency light emitting device

Info

Publication number
TW200601575A
TW200601575A TW093118481A TW93118481A TW200601575A TW 200601575 A TW200601575 A TW 200601575A TW 093118481 A TW093118481 A TW 093118481A TW 93118481 A TW93118481 A TW 93118481A TW 200601575 A TW200601575 A TW 200601575A
Authority
TW
Taiwan
Prior art keywords
light emitting
semiconductor stack
nitride semiconductor
high efficiency
emitting device
Prior art date
Application number
TW093118481A
Other languages
Chinese (zh)
Other versions
TWI237903B (en
Inventor
Chen Ou
Ting-Yang Lin
Shih-Kuo Lai
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW93118481A priority Critical patent/TWI237903B/en
Priority to JP2005180721A priority patent/JP4339822B2/en
Priority to US11/160,354 priority patent/US7385226B2/en
Priority to DE102005029268.2A priority patent/DE102005029268B4/en
Priority to KR20050054517A priority patent/KR100687783B1/en
Application granted granted Critical
Publication of TWI237903B publication Critical patent/TWI237903B/en
Publication of TW200601575A publication Critical patent/TW200601575A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A high efficiency light emitting device, comprisinga substrate; a first nitride semiconductor stack forming on the substrate; a nitride light emitting layer forming on the first nitride semiconductor stack; a second nitride semiconductor stack forming on the nitride light emitting layer, wherein the second nitride semiconductor stack comprising a first surface and a second surface, the first surface is closer to the substrate, the second surface comprising multiple hexagonal pyramid cavity; a transparence oxide conductivity layer forming on and having an ohmic contact with the second nitride semiconductor stack.
TW93118481A 2004-03-24 2004-06-24 High efficiency light emitting device TWI237903B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW93118481A TWI237903B (en) 2004-06-24 2004-06-24 High efficiency light emitting device
JP2005180721A JP4339822B2 (en) 2004-06-24 2005-06-21 Light emitting device
US11/160,354 US7385226B2 (en) 2004-03-24 2005-06-21 Light-emitting device
DE102005029268.2A DE102005029268B4 (en) 2004-06-24 2005-06-23 Light-emitting component
KR20050054517A KR100687783B1 (en) 2004-06-24 2005-06-23 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW93118481A TWI237903B (en) 2004-06-24 2004-06-24 High efficiency light emitting device

Publications (2)

Publication Number Publication Date
TWI237903B TWI237903B (en) 2005-08-11
TW200601575A true TW200601575A (en) 2006-01-01

Family

ID=35504676

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93118481A TWI237903B (en) 2004-03-24 2004-06-24 High efficiency light emitting device

Country Status (4)

Country Link
JP (1) JP4339822B2 (en)
KR (1) KR100687783B1 (en)
DE (1) DE102005029268B4 (en)
TW (1) TWI237903B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392113B (en) * 2006-12-11 2013-04-01 Toyoda Gosei Kk Compound semiconductor light-emitting element and manufacturing method thereof
US8487320B2 (en) 2010-06-04 2013-07-16 Tsinghua University Light emitting diode
TWI420694B (en) * 2008-07-29 2013-12-21 Epistar Corp Opto-electrical device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100887067B1 (en) * 2006-02-14 2009-03-04 삼성전기주식회사 Manufacturing Method for Semiconductor Emitting Device with nano pattern structure
US9508902B2 (en) 2005-02-21 2016-11-29 Epistar Corporation Optoelectronic semiconductor device
DE102005056604A1 (en) * 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Semiconductor body comprises an active semiconductor layer sequence based on a nitride compound semiconductor material which produces electromagnetic radiation and an epitaxially grown coupling layer with openings
KR100755598B1 (en) 2006-06-30 2007-09-06 삼성전기주식회사 Nitride semiconductor light emitting diode array
JP5493252B2 (en) * 2007-06-28 2014-05-14 日亜化学工業株式会社 Semiconductor light emitting device
KR100905859B1 (en) * 2007-12-17 2009-07-02 삼성전기주식회사 Nitride semiconductor light emitting device and manufacturing method thereof
KR20090073935A (en) * 2007-12-31 2009-07-03 주식회사 에피밸리 Iii-nitride semiconductor light emitting device
JP5282503B2 (en) 2008-09-19 2013-09-04 日亜化学工業株式会社 Semiconductor light emitting device
KR101389462B1 (en) * 2013-04-10 2014-04-28 주식회사 소프트에피 Iii-nitride semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977280A3 (en) * 1998-07-28 2008-11-26 Interuniversitair Micro-Elektronica Centrum Vzw Devices for emitting radiation with a high efficiency and a method for fabricating such devices
JP2002164570A (en) * 2000-11-24 2002-06-07 Shiro Sakai Gallium nitride compound semiconductor device
JP4233268B2 (en) * 2002-04-23 2009-03-04 シャープ株式会社 Nitride-based semiconductor light-emitting device and manufacturing method thereof
TWI237402B (en) * 2004-03-24 2005-08-01 Epistar Corp High luminant device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392113B (en) * 2006-12-11 2013-04-01 Toyoda Gosei Kk Compound semiconductor light-emitting element and manufacturing method thereof
TWI420694B (en) * 2008-07-29 2013-12-21 Epistar Corp Opto-electrical device
US8487320B2 (en) 2010-06-04 2013-07-16 Tsinghua University Light emitting diode

Also Published As

Publication number Publication date
TWI237903B (en) 2005-08-11
JP2006013500A (en) 2006-01-12
DE102005029268A1 (en) 2006-01-19
KR100687783B1 (en) 2007-02-27
JP4339822B2 (en) 2009-10-07
KR20060049672A (en) 2006-05-19
DE102005029268B4 (en) 2017-04-13

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