TWI237903B - High efficiency light emitting device - Google Patents

Abstract

A high efficiency light emitting device, comprising a substrate; a first nitride semiconductor stack forming on the substrate; a nitride light emitting layer forming on the first nitride semiconductor stack; a second nitride semiconductor stack forming on the nitride light emitting layer, wherein the second nitride semiconductor stack comprising a first surface and a second surface, the first surface is closer to the substrate, the second surface comprising multiple hexagonal pyramid cavity; a transparence oxide conductivity layer forming on and having an ohmic contact with the second nitride semiconductor stack.

Description

1237903 V. Description of the invention (1) Technical field The present invention relates to a β-rate light-emitting element and a light-emitting element, in particular, to a high light-emitting effect. The prior art display device has two light sources: two applications, two applications, and medical devices. At present, the brightness of non-glycoside devices and lighting poles is extremely high. The technical task of the project is to improve the light-emitting diodes in conventional nitride light-emitting diodes, and the surface layer (-generally Ni / Au Series materials) As transparent, thin metals are mostly light-shielding. The previous day's quilt produced by light-emitting diodes is due to the reduction of light transmittance due to the metal: harvest, so that it still retains a certain If: layer despite its' Therefore, in the visible light band of the thin metal layer = to = = about 60/0 to 70%, so the luminous efficiency of the light-emitting diode is relatively low. In US Patent No. 6,078, 064 (which is related to the present application) Have the same assignee) reveal a light-emitting diode structure, the light-emitting diode has a transparent oxide conductive layer on the surface and is formed on a high-density mouth contact layer, and the bright oxide conductive layer usually has a higher transmittance (~ 90% or more u 迓 has good light transmittance and can have a thicker thickness, so the current spreading effect is also better and = this can improve the light emitting characteristics of the light emitting diode, and improve its light emitting efficiency. However, the transparent oxide The conductive layer needs to be in contact with the high-concentration P-type contact layer (the p-type load needs to have a large curvature) 5 X 1018 / cm3 or more) in order to form a good ohmic contact. Country_ Page 7 1237903 V. Description of the invention (2) In Taiwan Patent No. 144, 415 (which has the same assignee as this case), it is disclosed that A technique of reverse tunneling layer, the use of -n + reverse contact layer can make an oxide transparent electrode layer and a semiconductor light-emitting stack, use the tunneling mechanism to achieve the purpose of good ohmic contact, so as to improve the light emission The luminous efficiency of the polar body and reduce the operating voltage. In addition, YC Lin et al. 849-

(Page 853) is also disclosed on the p-type contact layer of the nitride diode. A thin metal layer is placed first, followed by a transparent oxide conductive layer, which can effectively reduce the gap between the P-type contact layer and the transparent oxide conductive layer. Its contact resistance. However, the thin metal layer still has the effect of reducing the overall transmittance, so the light emitting efficiency of the light emitting diode is still limited.

The inventor of this case gained an inventive idea when he further considered how to improve the brightness of these prior art light-emitting poles, reduce the contact resistance between such contact layers and the transparent oxide conductive layer, and simplify the complexity of the process. If a light-emitting element with high luminous efficiency is provided, the surface of the light-emitting element has a plurality of inner hexagonal tapered hole structures extending downward, and then an oxide transparent conductive layer is directly formed on the surface, and the oxide is transparent and conductive The layer directly forms a low-resistance ohmic contact with the inner surface of the hexagonal cone-shaped hole on the surface of the element. High concentration p-type contact layers, reverse tunneling contact layers, or thin metal layers in the art. Moreover, with the hexagonal cone-shaped hole structure,

1237903 V. Description of the invention (3) The light output area of the body reduces the light loss caused by the total reflection effect, and can reduce the light absorption effect of the semiconductor stack on the upper side of the light-emitting layer, and greatly improves the overall light extraction efficiency of the light-emitting element, while achieving an improvement The development of light-emitting elements ^ efficiency, reducing operating voltage, and simplifying the process and other projects. Another object of the present invention is to provide a light-emitting element with high luminous efficiency, in which a substrate exists; a first nitride semiconductor stack formed on the substrate; and a first nitride semiconductor stack formed on the first nitride semiconductor stack. A nitride light-emitting layer; a second nitride semiconductor two layer formed on the nitride light-emitting layer, wherein the surface of the second nitride semiconductor stack with a plurality of downwards facing the nitride light-emitting layer has a plurality of downwards An extended hexagonal cone-shaped hole structure, osmium, and an oxide transparent conductive layer formed on the second nitride semiconductor stack, wherein the oxide transparent conductive layer extends and fills the surface of the second nitride semiconductor stack Inside the hexagonal tapered hole and forming an ohmic contact with the inner surface of the hexagonal tapered hole of the second nitride semiconductor stacked surface φ. The first nitride semiconductor stack described in J may be N-type or ρ-type. The second nitride f-halide body stack is electrically opposite to the first nitride semiconductor stack. Generally, the second nitrogen The p-type nitride semiconductor stack is p-type. The p-type nitride semiconductor stack is parallel to the substrate at the surface of the nitride light-emitting layer. The planar structure of the oxide transparent conductive layer cannot be directly confused with the p-type. The surface layer of the compound forms a good ohmic contact, so it is easy to cause the operating voltage of the device to be high. Page 91237903 V. Description of the invention (4) The surface of the nitride nitride semiconductor stack with respect to the nitride hair layer first forms a plurality of hexagonal cones, and the oxide transparent conductive layer is formed thereon. Above, basin, and again, inside the surface of the p-type nitride semiconductor stack: the inner surface of the corner is in contact with each other. Since the surface of the p-type nitride semiconductor stack parallel to the US direction J and the inside of the hexagonal cone-shaped hole The surface has different surface energy states of the soil. This difference in surface energy states is due to the different lattice directions and the potential energy of the coplanar atoms. If the oxide transparent conductive layer is formed at 9 / mass of the p-type nitride semiconductor stack parallel to the substrate, the interface between the transparent conductive layer of the compound and the p-type nitride semiconductor stack ^ Yes, high potential barrier , Which is the main cause of poor ohmic contact and component bias. However, when the inner surface of the hexagonal tapered hole is in contact with the oxide transparent conductive layer, the surface energy state is not high, so the potential barrier formed at the interface with the oxide transparent conductive layer is extremely low, so it can form a good Ohmic contact, drop the operating voltage of the element. When an operating current is applied, the current can be first diffused through the oxide transparent conductive layer, and then flows into the p-type nitride semiconductor through the low resistance of the oxide transparent conductive layer in contact with the inner side of the hexagonal tapered hole II. Luminescence occurs in the stack and flows through the light-emitting layer. And because the inner hexagonal tapered hole structure of the surface layer itself reduces the total reflection effect and reduces the light absorption by the P-type stack, it improves the light extraction efficiency of the element. In addition, the oxide transparent conductive layer is more transparent and conductive than the traditional thin metal. The layer has better transmittance, and therefore can greatly improve the light emitting efficiency of the device.

Page 10 1237903

Embodiment = refer to FIG. 1, according to a preferred embodiment of the present invention, a light-emitting device with high luminous efficiency includes a sapphire substrate 10; a nitride buffer layer 11 formed on the sapphire substrate; and a nitride formed on the nitride A type nitride semiconductor stack 2 on the buffer layer 11, wherein the N-type nitride semiconductor stack 12 includes a first surface and a second surface away from the nitride buffer layer; formed on the first surface The previous nitride multiple quantum well light-emitting layer 13; a p-type nitride semiconductor stack 14 formed on the nitride multiple quantum well light-emitting layer; the p-type nitride semiconductor stack 14 is far from the nitride multiple quantum well. The surface of the light-emitting layer includes a plurality of downwardly extending internal hexagonal tapered hole structures _ 141; an oxide transparent conductive layer formed on the p-type nitride semiconductor stack 14 and the internal hexagonal tapered hole structures 1 41 丨5. The oxide transparent conductive layer material is in contact with the inner side surface 1 4 11 of the hexagonal cone-shaped hole structure 1 4 1; the 1 ^ -type electrode 16 formed on the second surface of the N-type nitride semiconductor stack 12 ; And formed by oxidation The transparent conductive layer is one of p-type electrode 15 1 7 ° 2 is a schematic view of a surface layer 14 of the tapered hole has a hexagonal configuration within a plurality of p type 141 of the nitride semiconductor multilayer. The contact resistance formed by the foregoing oxide transparent conductive layer 15 and the inner side surface 1 4 11 of the hexagonal cone-shaped hole structure is smaller than the oxide transparent conductive layer 5 φ and 140 on the upper surface of the P-type nitride semiconductor stack. Formed contact resistance. The aforementioned hexagonal cone-shaped hole structure is related to the physical properties of the lattice of the nitride material, and its shape and angle mainly depend on the lattice of the nitride material

Page 111237903 V. Description of the invention (6) As an example, the sapphire substrate grown on the C surface has a continuous tapered surface of 120 °, and the tapered surface is formed by " 〇 or 疋 U1-22} Crystal plane group. The hexagonal conical hole structure can be formed by at least one or a combination of the following manufacturing methods: Lu = Ξ The pyramidal hole structure can be formed by growing the initial layer of the hexagonal conical hole. Provide surface activity ^ c. Begin by changing the stone # 分 r〜 片 Rsuriactant), such as Si or Mg. / 、 The cat becomes a nucleus, and it is formed in the p-type semiconductor stack or surface layer. = :: ΐ? The hole structure can also be formed by i. . . . The range grows so that it changes f: ί: sadness, and is formed in the p-type semiconductor stack or surface layer. The U-six-earth cone-shaped hole structure can be formed by forming a worm crystal in the -H nitrogen atmosphere at the beginning of its hexagonal cone-shaped hole. Form it. 4. The inner hexagonal tapered hole structure can be etched by a chemical wet etching method (such as high temperature H3p04) after the p-type semiconductor stack is completed.

The surface layer of the layer is formed. S 5. The hexagonal cone-shaped hole structure can be formed by first growing a small hexagonal cone-shaped hole in a stupid crystal, and then growing it in a remote crystal. The pyramidal hole is engraved as = a large hexagonal pyramidal hole, it changes the light output efficiency. 4 When a hexagonal pyramidal hole is formed in the form of ^, if a larger hole is directly formed, it is combined with the periphery of the Z hexagonal pyramidal hole Large stresses are generated everywhere, leading to the lack of two

1237903 V. Description of the invention (7) The quality of the epitaxy is destroyed and the electrical characteristics of the light-emitting diode are affected. However, if smaller holes are first formed by epitaxy and then deepened and enlarged by chemical wet etching, less stress will be generated and the quality of the stupid crystal layer around the hexagonal cone holes will be avoided. In the present invention, the influence of the change in the structure of the hexagonal cone-shaped hole on the brightness of the light-emitting diode can be explained with reference to FIGS. 3 to 5. In the present invention, the density of the hexagonal cone holes may be between 1 x 10Vcm2 and} χ 1011 / cm2; for a preferred range of the density of the hexagonal cone holes, please refer to FIG. 3 'It is prepared according to the present invention The relationship between the brightness of the light emitting element with high luminous efficiency and the density of the hexagonal cone holes. It can be seen from the figure that as the density of the hexagonal cone holes increases from 1 X 108 / cm2 to 2 X l0Vcm2, the brightness significantly increases from 117mcd to about 150mcd, showing that increasing the density of the hexagonal cone holes really helps Improved brightness of light-emitting diodes. In the present invention, the diagonal size of the top end of the hexagonal tapered hole can be between 10 nm and 1 um; the preferred diagonal size of the top of the hexagonal tapered hole is shown in FIG. 4, which is based on this The relationship between the brightness of the light-emitting 7G piece with high luminous efficiency and the size of the diagonal line at the top of the hexagonal cone hole. It can be seen from the figure that as the size of the hexagonal cone holes increases from 122nm to 168nm, the brightness can be increased from 128mcd to 173mcd, showing that the larger hexagonal cone holes can also significantly improve the brightness of the light-emitting diode. . • In the invention of the inventor, the depth of the hexagonal cone-shaped hole can be between 10nm and lum! For a preferred range of the depth of the pyramid-shaped hole, please refer to FIG. 5, which is a light-emitting element with high luminous efficiency made according to the present invention. , Its brightness and inner hexagon

Page 13 1237903

V. Description of the invention (8) Relation diagram of the depth of the conical hole. From the picture, it can be seen that = 0 ^ cd, showing a deeper hexagonal tapered hole is more conducive to brightness. 'It needs to be controlled to emit light and cause the light emitting diode to be sufficient to ensure the inside and outside of the hole. Otherwise It is easy to cause the operation of electric hexagonal tapered holes

However, the bottom of the inner hexagonal cone-shaped hole starts at the bottom of the layer, and the top of the layer extends to the light-emitting layer, which has poor electrical characteristics. In addition, the thickness of the oxide transparent conductive layer can maintain the oxide transparent conductive layer at the junction of the tapered sides of the hexagon, so that no discontinuity or breakage is formed, and the flow cannot effectively contact the inner and inner sides through the oxide transparent conductive layer. The lower the resistance into the semiconductor material, the higher the voltage. Referring to the following table, a nitride light-emitting diode has a hexagonal cone hole extending downward on its surface, and the average depth of the hexagonal cone hole is 150 nm.

When the 70nm and 220nm oxide transparent conductive layers are formed thereon, it will be found that a 70nm thick light-emitting diode has a higher operating voltage, which is about 3 · 6ν at 20mA, and a 220nm thick light-emitting diode. The 20mA operating voltage is only about 3 · 3ν, so it can be known that when the oxide transparent conductive layer has substantially sufficient thickness, the operating voltage of the device can be effectively reduced.

Page 14 1237903

V. Description of the invention (9) The average depth of the oxide transparent conductive layer of the hexagonal cone hole ^ ^ Operating voltage of the light emitting diode (@ 20mA) 3.6V ~~ 150nm 70nm-3.3V 150nm 220nm The aforementioned oxide is transparent and conductive The layer 15 has a transmittance of more than 50% in a wavelength range of 300 to 700 nm. The oxide transparent conductive layer may be made by an electron beam evaporation method (Ebeam evaporater), an ion sputtering method (Sputter) or a thermal coating method (Thermal coater), or a combination of two or more methods.

In the aforementioned oxide transparent conductive layer manufacturing process, it is better to fill the hexagonal tapered hole, so that the area of the low-resistance contact area can be increased 'and the operating voltage of the device can be effectively reduced. Signs on materials. For packaged refractors that are poor in efficiency, they will be filled with oxidation. In other words, the rate of heteropolar oxide materials and the light guide is better. Because the six materials inside are transparent, it is necessary to refraction the material to be transparent. The surface of the conductive layer of the pyramidal hole of the nitrided electrical layer makes the original hexagonal hexagonal tapered hole the best. Therefore, the refractive index of this material is between the refractive index of the conductive layer and it is easy to fill it. The refractive index emissivity of the material on the lower side of the tapered cavity node needs to be outside. After the encapsulation material is absolutely continued with the oxygen emissivity, the full or filled hexagonal cone structure exhibits the combined nitride transmittance value with the upper side. The refractive oxide is transparent and flat. Therefore, the refractive index design of the best light-extracting material with substantially shaped cavities is that the absolute difference between the front material and the subsequent bright conductive layer is greater than the oxidation rate.

Page 15 12379903 V. Description of the invention (10) Figure 6 shows a light-emitting diode (LED-A) with a hexagonal tapered hole structure and an oxide conductive layer and a thin metal transparent conductive layer without a hexagonal tapered hole structure. Comparison of the characteristics of the luminous intensity and the operating current of the conventional light-emitting diode (LED-B) and the light-emitting diode (LED-C) without the hexagonal cone hole structure and the oxide conductive layer. It can be seen from the figure that in the traditional light-emitting diode LED-β without the hexagonal cone hole structure and the thin metal transparent conductive layer, the thin metal transparent conductive layer has poor transmittance, so its luminous characteristics are not ideal. , The brightness is low. The light-emitting diode LED-C, which replaces the traditional thin metal transparent conductive layer with an oxide transparent conductive layer, can indeed improve the luminous efficiency and luminous efficiency due to its good permeability. By using the light-emitting diode LED-A of the present invention, the hexagonal cavity structure is used to increase the overall light output area, reduce the light loss caused by the total reflection effect, and reduce the light absorption effect of the semiconductor stack on the upper side of the light-emitting layer. It can greatly improve the overall luminous efficiency and brightness. FIG. 7 is a conventional light-emitting diode (LED-B) with a hexagonal cone-shaped hole structure and an oxide conductive layer and a thin metal transparent conductive layer without a hexagon-shaped cone-hole structure of the invention & Comparison of forward current and voltage characteristics of light-emitting diodes (LEbc) with no hexagonal cone hole structure and oxide conductive layer. It can be seen from the figure that the traditional light-emitting diode LED-B has a lower operating voltage; while the light-emitting diode LED-C using an internal hexagonal cone hole structure and an oxide transparent conductive layer is not formed because of the interface Good ohmic contact, so its operating voltage is quite high, it will reach 5 V or more at 20mA. In contrast, according to the method of the present invention, a light-emitting diode with a hexagonal cone-shaped hole and eight structures and a transparent oxide conductive layer is provided.

Page 16 1237903 V. Description of the invention (11) The operating voltage can be reduced to a range close to the traditional thin metal transparent conductive layer light-emitting diode LED-B, which obviously has its significant improvement. Referring to FIG. 8, according to another preferred embodiment of the present invention, a light emitting device 2 with high light emitting efficiency is different from the light emitting device 1 with high light emitting efficiency described above in that the second surface of the N-type semiconductor stack 12 includes an N-type An electrode contact region 121 and an electrodeless contact region 122. The N-type electrode 16 is formed on the N-type electrode contact region 121. The electrodeless contact region 122 further includes a high-light extraction efficiency surface. After the etching process or telecrystal growth, a roughened surface or a plurality of downwardly extending hexagonal cone-shaped hole structures is formed. In this embodiment, it is represented by a roughened surface structure 123. The surface of the non-electrode contact area Including the roughened surface structure can reduce the lateral light transmitted repeatedly between the N-type nitride semiconductor stack and the substrate, so that the lateral light can be effectively extracted to further improve the light emitting efficiency of the light emitting diode. Out: m FIG. 9 ′ According to another preferred embodiment of the present invention, a kind of high-light extraction: a light-emitting light member 3, which is similar to the above-mentioned high-light extraction efficiency light-emitting element 2

The electrodeless contact area 123 on the second surface of the conductor stack 12 is more complicated. = High light extraction efficiency including the roughened surface structure. The surface is made of 3. The electrodeless contact area 1 2 2 is roughened. Surface 4 18, one of the second oxide transparent conductive layer on the second oxygen surface 23, such as the electrode 16 to form a fruit; In addition, the transparent conductive layer can also increase the current diffusion effect material and Subsequent sealing 1 bismuth 4 ;: 12 Dendrobium refracting leather is right between the refractive index of the packaging material 'which can increase the packaging 4

1237903 V. Description of the invention (12) Light extraction efficiency. In the above embodiment, an oxide transparent conductive layer may be included between the N-type electrode contact region 121 on the second surface of the N-type semiconductor stack 12 and the N-type electrode 16. In the above embodiments, the oxide transparent conductive layer can also be directly used as the N-type electrode. In the above embodiment, the N-type electrode contact region 121 may include a plurality of inner hexagonal tapered hole structures extending downward. In the above embodiment, the sapphire substrate may have 0. ~ 10. The sapphire substrate can be replaced by at least one of the materials in the group consisting of SiC, GaAs, CaN, AIN, GaP, Si, ZnO, MgO, and glass, or other replaceable materials. In the above embodiment, the nitride buffer layer may include a material selected from A1 N,

One of the materials in the group consisting of GaN, AlGaN, InGaN, and A1 InGaN is an N-type nitride semiconductor stack that may be selected from the group consisting of ain, GaN,

A material in the material group consisting of AjGaN, InGaN, and AlInGaN; the nitride multiple quantum well light emitting layer may include a material selected from the material group consisting of GaN, InGaN, and AjlnGaN; the p-type nitride semiconductor hafnium layer may A material selected from the group consisting of AIN, GaN, AlGaN, InGaN, and A1 InGaN; the oxide transparent conductive layer includes a material selected from indium tin oxide, cadmium tin oxide, antimony tin oxide, and indium oxide At least one of the materials group consisting of aluminum, zinc aluminum and zinc tin oxide. The above are only preferred embodiments of the present invention, and the scope of the present invention is not limited to these preferred implementations. Any changes made in accordance with the present invention, 1237903 V. Description of the invention (13) belongs to this The scope of patent application for invention. Therefore, any person who is familiar with this technology can make any changes without departing from the scope and spirit of the patent application of the present invention. Page 19 1237903

Brief description of the drawings: _ Figure 1 is a schematic diagram showing a light emitting element with high light emitting efficiency according to a preferred embodiment of the present invention; Figure 2 is a schematic diagram showing a plurality of hexagonal cone-shaped hole structures in the present invention Schematic diagram of the P-type nitride semiconductor laminated surface layer; Figure 3 shows the relationship between the brightness of the light-emitting element made according to the present invention and the hexagonal cone hole density; Figure 4 shows the light-emitting element not made according to the present invention. The relationship between the brightness and the diagonal size of the top of the hexagonal cone hole; Figure 5 shows the relationship between the brightness and the depth of the hexagonal cone hole of a light-emitting device made according to the present invention; ^ Figure 6 shows that the present invention has an internal six Pyramid hole structure with light-emitting diode of oxide conducting layer, light-emitting diode without hexagonal tapered hole structure with thin metal transparent channel layer, and light-emitting diode without hexagonal tapered hole structure with oxide conductive layer The ratio of the luminous intensity to the operating current. Figure 7 shows that the present invention has a hexagonal cone-shaped hole with a complex oxide structure.

I :: Light-emitting diodes, no hexagonal taper hole structure with traditional thin-metal traditional light-emitting diodes and no hexagonal M-hole structure Comparison of voltage characteristics; luminous efficiency of the luminous element #; "A bright embodiment of a bright type-a kind of Fig. 9 is a schematic diagram showing a light-emitting element of the Ether photoluminescence. The preferred embodiment of the present invention-a kind of

1237903 Simple illustration on page 20

Explanation of symbols on page 21 10 Sapphire substrate 11 Nitride buffer layer 12 N-type nitride semiconductor stack 13 Nitride multiple quantum well light-emitting layer 14 P-type nitride semiconductor stack 141 Hexagonal tapered hole structure 1411 Inner side surface 15 Oxide Transparent conductive layer 16 N-type European JtEL electrode 17 P-type European Lel electrode 121 N-type electrode contact area 122 No-electrode contact area 123 Roughened surface structure 18 Oxide transparent conductive layer

Claims (1)

1237903 VI. Scope of patent application 1. A high-fabrication substrate is formed on the layer; formed on the layer, wherein the surface of the layer is formed; and formed on the electrical layer, the surface of the oxygen stack, and the light emission efficiency of the hexagonal cone The device includes at least: y-Z-Nitride semiconductor stack; μ-nitride one of the nitride semiconductor light-emitting stacks, the nitride-emitting zibu-diode semiconductor With respect to the nitride, the stacked semiconductor stack has a number of internal hexagonal tapered hole structures extending downward. One of the oxide transparent conductive layers on the second nitride semiconductor stack extends and is filled in. The plurality of inner hexagonal tapered cavities extending downward of the second nitride semiconductor semiconductor are substantially in ohmic contact with the inner surface of the shaped cavities. 2. A light-emitting element with high luminous efficiency as described in item 1 of the scope of Shenqing Patent, wherein the size of the diagonal of the top end of the hexagonal cone hole structure is between 1 Onm and 1 um. 3. As described in item 1 of the scope of the patent application, a light-emitting element with high luminous efficiency, wherein the density of the hexagonal cone hole structure is between lxl 007cnr2 to 1xl 011 cnr2. 4 · As described in item 1 of the scope of the patent application, the light-emitting element of indirect luminous efficiency, wherein the depth of the hexagonal cone hole structure is between 10 · to Article 1237903 6. The scope of patent application is between 1 V m. 5. A light-emitting element with high luminous efficiency as described in item 1 of the scope of the patent application, wherein X & > is included between the substrate and the first semiconductor stack. 6. A light-emitting device with high luminous efficiency as described in item 1 of the scope of patent application, wherein the oxide transparent conductive layer comprises a material selected from the group consisting of x indium tin oxide, cadmium tin oxide, antimony tin oxide, and indium oxide. Zinc, zinc aluminum oxide, and zinc tin oxide form at least one of the material groups or other alternative materials. 7 strains such as the scope of patent application! A light-emitting element with high luminous efficiency as described in the item: Gate: The transparent conductive layer of the oxide has a transmittance of more than 50% when the wavelength range is between 3. 8 · If, the thickness of the light-emitting element of the transparent transparent conductive luminous efficiency of the oxide is the thickness of the conductive layer between 50nm and lum. 9 • As mentioned in item 丨 of the scope of patent application, wherein the substrate is a _c ^ light emitting element plate with high luminous efficiency. The hexagonal cone holes are adjacent 1) as the sapphire base of the main surface, and the cone surface is formed by {10-U}, the angle between the curves is substantially 120. to make. Day-to-day noodle group or 丨 11-2 2 crystal face group structure 1237903 6. Two patent application scopes, as described in the first patent scope item-a kind of high luminous efficiency light-emitting element, in which the sapphire substrate,椋 helm, πηπ ^ The beauty of the main surface is one (0 0 0 1) or (11-20) as the substrate, and has 0 ~! 〇. Of-any declination. 1 1. As described in item 1 of the scope of the patent application, resumption, pretending to be a kind of light-emitting element Gap 1 μ substrate system 0 3 selected from GaN, AIN, SiC, GaAs, At least ^ \ ίη (), Mg〇, MgA1 204, and one of the materials in the group of materials made of glass or other alternative materials. A light emitting element with a high luminous efficiency as described in / + Please patent scope / 1, the first nitride semiconductor stack system includes a member selected from A1N, 1 G a Ν, I n G a Ν, and A1 I $, 丨, a material, or other replaceable materials in the material group formed by n G a Ν.乂 1 3. A light-emitting device with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the first nitride semiconductor stack includes at least one n ^ nitride semiconductor layer, and the second nitride semiconductor The stack includes at least a P-type nitride semiconductor layer. 1 4. A light-emitting device with high luminous efficiency described in item i of the patent application, 70 pieces, wherein the first nitride semiconductor stack includes at least one p-type nitride semiconductor layer, and the second nitride semiconductor stack The layer includes at least one n-type nitride semiconductor layer. 1237903 1 6. The scope of patent application 1 5 · As in the scope of the patent application, item AL r.1, the local luminous efficiency is more important than ancient ones, in which the nitride light-emitting layer is # 人 & YOU Shoufan Xianfan : "2."-compilation-3 materials I group of materials in the group ^ materials or other alternative materials. Wild rI main v seed material 1 piece 6. As described in Λ claim patent range 1-a kind of high luminous efficiency light emitting element U: the nitride light emitting layer can be a double heterostructure, a single quantum well 2 structure or multiple quantum Well structure. Qianliyuan Kaijie 1 opened 7 strains, such as the Λ patent scope of item 1 or described-a kind of high luminous efficiency of light emitting eight, the second nitride semiconductor stacking system contains a material selected from the group consisting of GaN, AlGaN, InGaN Groups of materials consisting of AlInGaN and AlInGaN are one or more alternative materials. 18. A light-emitting device with high luminous efficiency as described in item 1 of the scope of the patent application, wherein the buffer layer contains at least one material selected from the group consisting of AIN, GaN, AlGaN, GaN, and AlInGaN. Of materials. 4 丁 叶 忒 具 匕 9 9 A light-emitting element with a high luminous efficiency as described in item 1 of Shenjing's patent scope, where 'the' six Y-structures within the surface of the second nitride semiconductor stack are grown by telecrystals Way of forming. Angle hole VIII, ° 2 0 · As described in item 1 of the scope of patent application, a light-emitting element with high luminous efficiency, page 25, 1237903 6. Application for patent scope, where 'the second nitride semiconductor laminate surface is within The cavity structure is formed by wet etching. /, Corner, ’, in which the six-cavity structure inside the surface of the helium di-nitride semiconductor stack is formed by epitaxial growth followed by wet etching ^. '' 22. As described in item 1 of the range of Λ-a kind of high luminous efficiency light emitting element ΐ; ΐ: the distance from the bottom of the nitrogen cone hole to the substrate is not less than the upper surface of the lice compound light emitting layer from the The distance of the substrate. 2 3 · As in the case of Grade 1g in the scope of the patent application, the contact resistance of the transparent conductive layer of the luminescent element in the #South luminous efficiency is substantially lower than that of the oxidized contact: The surface element of the layer-parallel substrate is the one described in item 1 of the second round, a kind of high luminous efficiency light-emitting material and sealing I = oxygen. The refractive index of the transparent conductive layer is between nitride and Refractive index of the packing material. 25 · As per%, its; Special: a kind of high luminous efficiency light emission described in item H f1 ~ the first surface and the dinitride semiconductor stack away from the substrate include the first surface, and the nitride light emitting layer is formed on The first page 261237903 6. Scope of Patent Application Above the surface. 2 6. A high luminous efficiency device as described in the entrusted item of the patent application scope, further comprising forming a second oxide transparent conductive layer on the / nitride semiconductor stack / light. Another aspect is a high luminous efficiency το component as described in item 26 of the scope of patent application, wherein the second oxide transparent conductive layer comprises a material selected from the group consisting of indium tin, cadmium tin oxide, and antimony oxide. At least one material in the group of materials composed of tin, indium zinc oxide, and zinc tin oxide, and an oxidizing material. L. It can be replaced by a material 28. A component as described in item 26 of the scope of patent application, wherein, the *: X-ray refraction of the conductive layer of the oxide through the sun and the moon 4: between the refractive index of the gaseous material and the packaging material. 、 &Quot; in nitrogen 29 · As described in the scope of patent application No. 25 ~ High luminous element, in which the second surface of the first nitride semiconductor conductor stack second surface: No. 3 extraction efficiency surface. The younger surface is a commercial light 30. A high luminous efficiency as described in item 29 of the scope of patent application Element, wherein the high-light extraction efficiency surface includes a downwardly extending pyramidal hole structure. 构造 内 内 八 The luminous depth of the surrounding / type of high luminous efficiency is between 10 and 1237903. 6. Patent application range 3-1. · A luminous element with high luminous efficiency as described in item 30 of the scope of patent application. Among them, more A second oxide transparent conductive layer is formed on the second surface of the first nitride semiconductor stack having the inner hexagonal tapered cavity structure extending downward. 3 2. The light-emitting device with high light-emitting efficiency according to item 3 丨 in the scope of patent application, wherein the oxide transparent conductive layer extends and fills the inner hexagonal tapered hole on the surface of the first nitride semiconductor stack. . 3 3 · The light emitting element of the 1 ^ luminous efficiency described in item 30 of the scope of patent application, wherein the size of the diagonal of the top end of the hexagonal cone hole structure is between 1 Onm and 1 // m between. 34. The light-emitting element of the above-mentioned type / luminous efficiency as described in item 30 of the scope of patent application, wherein the quilt structure of the hexagonal cone hole structure is between lxl07cm_2 and lxliPcnr2. 35. The element according to item 30 of the scope of patent application, wherein the hexagonal cone hole structure is between 1 // m. 36. As described in item 30 of the scope of application for a patent, a light-emitting element with light-emitting efficiency, wherein the hexagonal cone hole structure is formed by wet etching. Page 28 1237903 Patent Application Range 6 7. A light-emitting device with high luminous efficiency as described in Item 3 丨 of the Patent Application Range, wherein the second oxide transparent conductive layer contains a material selected from the group consisting of indium tin oxide, oxidized tin oxide, At least one of the materials in the group consisting of tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide or other alternative materials. 38. The light-emitting element with high light-emitting efficiency according to item 29 of the scope of the patent application, wherein the high-light extraction efficiency surface includes a roughened structure. 39. As claimed in claim 38, a light-emitting device with high luminous efficiency as described in item 38, further comprising forming a second surface on the second surface of the first nitride semiconductor stack having a roughened structure. An oxide transparent conductive layer. 40. A light-emitting device with high luminous efficiency as described in item 39 of the scope of patent application, wherein the second oxide transparent conductive layer comprises a material selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, and indium zinc oxide At least one of the materials in the group consisting of zinc oxide, zinc oxide, and tin oxide or other substitute materials 0 4 1 · A light-emitting element with high luminous efficiency as described in item 38 of the scope of patent application, wherein The chemical structure is formed by wet etching. 42. A light-emitting device with high luminous efficiency as described in item 31 of the scope of patent application, wherein the refractive index of the second oxide transparent conductive layer is between nitrogen on page 29, 12379903. Refractive index of packaging materials ΙΙΙΗΙΙ page 30