TW200635077A - GaN-based light emitting diode with polarization inverted layer - Google Patents

GaN-based light emitting diode with polarization inverted layer

Info

Publication number
TW200635077A
TW200635077A TW094109863A TW94109863A TW200635077A TW 200635077 A TW200635077 A TW 200635077A TW 094109863 A TW094109863 A TW 094109863A TW 94109863 A TW94109863 A TW 94109863A TW 200635077 A TW200635077 A TW 200635077A
Authority
TW
Taiwan
Prior art keywords
polarization
gan
emitting diode
light emitting
layer
Prior art date
Application number
TW094109863A
Other languages
Chinese (zh)
Inventor
Mu-Jen Lai
Original Assignee
Super Nova Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Super Nova Optoelectronics Corp filed Critical Super Nova Optoelectronics Corp
Priority to TW094109863A priority Critical patent/TW200635077A/en
Priority to JP2005150695A priority patent/JP2006279005A/en
Priority to KR1020050049220A priority patent/KR20060105396A/en
Publication of TW200635077A publication Critical patent/TW200635077A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A GaN-based light emitting diode with polarization inverted layer is disclosed. A polarization inverted layer is set between a transmitting light conductive layer and a p-type semiconductor layer for transforming Ga–polarization to N-polarization of the surface of p type semiconductor layer to reduce the contacting resistance and the working voltage between the transmitting light conductive layer and the p type semiconductor layer and raise efficiency of light extracting, and further increase externak quantum efficiency.
TW094109863A 2005-03-29 2005-03-29 GaN-based light emitting diode with polarization inverted layer TW200635077A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW094109863A TW200635077A (en) 2005-03-29 2005-03-29 GaN-based light emitting diode with polarization inverted layer
JP2005150695A JP2006279005A (en) 2005-03-29 2005-05-24 Gallium nitride based light emitting diode provided with polarization inverted layer
KR1020050049220A KR20060105396A (en) 2005-03-29 2005-06-09 Light-emitting gallium nitride-based iii-v group compound semiconductor device with polarization inverted layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094109863A TW200635077A (en) 2005-03-29 2005-03-29 GaN-based light emitting diode with polarization inverted layer

Publications (1)

Publication Number Publication Date
TW200635077A true TW200635077A (en) 2006-10-01

Family

ID=37213379

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094109863A TW200635077A (en) 2005-03-29 2005-03-29 GaN-based light emitting diode with polarization inverted layer

Country Status (3)

Country Link
JP (1) JP2006279005A (en)
KR (1) KR20060105396A (en)
TW (1) TW200635077A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100859089B1 (en) * 2006-10-24 2008-09-17 주식회사 대우일렉트로닉스 Apparatus for checking caption file
KR100929307B1 (en) * 2007-06-11 2009-11-27 고려대학교 산학협력단 Vertical light emitting device and manufacturing method
JP2009231549A (en) * 2008-03-24 2009-10-08 Toyoda Gosei Co Ltd Nitride-based semiconductor light-emitting device
KR101101954B1 (en) * 2010-05-24 2012-01-02 고려대학교 산학협력단 Vertical structured group n-type nitride-based semiconductors having electrode structures with diffusion barrier, and light emitting diodes comprising said semiconductors
CN111164770B (en) * 2019-12-31 2021-09-21 重庆康佳光电技术研究院有限公司 Micro light-emitting diode chip, manufacturing method thereof and display device
CN115668496A (en) * 2020-05-25 2023-01-31 国民大学校产学协力团 Micro-nano FIN LED electrode assembly, manufacturing method thereof and light source comprising micro-nano FIN LED electrode assembly
KR102378757B1 (en) * 2020-06-10 2022-03-24 국민대학교산학협력단 Lighting source comprising micro-nano-fin light-emitting diodes and device comprising the same
KR102573266B1 (en) * 2021-08-02 2023-08-31 국민대학교산학협력단 Flexible ultra-thin LED skin patch and Manufacturing method thereof
CN117174802B (en) * 2023-11-02 2024-02-20 江西兆驰半导体有限公司 Epitaxial structure of light-emitting diode and preparation method thereof

Also Published As

Publication number Publication date
KR20060105396A (en) 2006-10-11
JP2006279005A (en) 2006-10-12

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