WO2008155960A1 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
WO2008155960A1
WO2008155960A1 PCT/JP2008/058845 JP2008058845W WO2008155960A1 WO 2008155960 A1 WO2008155960 A1 WO 2008155960A1 JP 2008058845 W JP2008058845 W JP 2008058845W WO 2008155960 A1 WO2008155960 A1 WO 2008155960A1
Authority
WO
WIPO (PCT)
Prior art keywords
type semiconductor
semiconductor layer
electrode
pad electrode
emitting device
Prior art date
Application number
PCT/JP2008/058845
Other languages
English (en)
French (fr)
Inventor
Nobuaki Matsui
Atsushi Yamaguchi
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to CN2008800203314A priority Critical patent/CN101689587B/zh
Priority to JP2009520400A priority patent/JP5235878B2/ja
Priority to US12/452,059 priority patent/US8330181B2/en
Priority to EP08752716A priority patent/EP2159852A4/en
Publication of WO2008155960A1 publication Critical patent/WO2008155960A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

　外部へ照射される光量を増大させることが可能な半導体発光素子を提供する。 　半導体発光素子（１）は、基板（２）と、ｎ型半導体層（３）と、発光層（４）と、ｐ型半導体層（５）と、ｎ側電極（６）と、ｎ側パッド電極（７）と、ｐ側電極（８）と、反射層（９）と、ｐ側パッド電極（１０）とを備えている。ｎ側パッド電極（７）は、ｎ側電極（６）を介してｎ型半導体層（３）と電気的に接続される。ｐ側パッド電極（１０）は、ｐ側電極（８）を介してｐ型半導体層（５）と電気的に接続される。ｎ型半導体層（３）と接続されるｎ側パッド電極（７）の接続面（７ａ）は、基板（２）を４等分した第１領域（Ａｒ１）～第４領域（Ａｒ４）のうち、矢印Ｂ方向側の短辺（２ｂ）に近い第１領域（Ａｒ１）に配置されるとともに、ｐ型半導体層（５）と接続されるｐ側パッド電極（１０）の接続面（１０ａ）は、矢印Ａ方向の短辺（２ｂ）に最も近い第４領域（Ａｒ４）に配置される。
PCT/JP2008/058845 2007-06-15 2008-05-14 半導体発光素子 WO2008155960A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008800203314A CN101689587B (zh) 2007-06-15 2008-05-14 半导体发光元件
JP2009520400A JP5235878B2 (ja) 2007-06-15 2008-05-14 半導体発光素子
US12/452,059 US8330181B2 (en) 2007-06-15 2008-05-14 Semiconductor light-emitting device
EP08752716A EP2159852A4 (en) 2007-06-15 2008-05-14 SEMICONDUCTOR LIGHT EMITTING DEVICE

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007158951 2007-06-15
JP2007-158951 2007-06-15
JP2007-158955 2007-06-15
JP2007158955 2007-06-15
JP2007236755 2007-09-12
JP2007-236755 2007-09-12

Publications (1)

Publication Number Publication Date
WO2008155960A1 true WO2008155960A1 (ja) 2008-12-24

Family

ID=40156120

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058845 WO2008155960A1 (ja) 2007-06-15 2008-05-14 半導体発光素子

Country Status (7)

Country Link
US (1) US8330181B2 (ja)
EP (1) EP2159852A4 (ja)
JP (1) JP5235878B2 (ja)
KR (1) KR20100047219A (ja)
CN (1) CN101689587B (ja)
TW (1) TWI430478B (ja)
WO (1) WO2008155960A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169940A (zh) * 2010-02-17 2011-08-31 丰田合成株式会社 半导体发光元件
JP2012099700A (ja) * 2010-11-04 2012-05-24 Sanken Electric Co Ltd 半導体発光装置
JP2015095617A (ja) * 2013-11-14 2015-05-18 日亜化学工業株式会社 発光素子の製造方法
JP2017528007A (ja) * 2014-09-15 2017-09-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 反射層を伴うマウント上の発光デバイス

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI393273B (zh) * 2009-08-27 2013-04-11 Edison Opto Corp 發光二極體組件之製造方法
KR20120032305A (ko) * 2010-09-28 2012-04-05 삼성엘이디 주식회사 반도체 발광다이오드 칩, 그 제조방법 및 품질관리방법
TW201228019A (en) * 2010-12-17 2012-07-01 Chi Mei Lighting Tech Corp Light emitting diode structure and method for manufacturing the same
KR101961307B1 (ko) * 2012-06-08 2019-03-25 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
CN104659235A (zh) * 2013-11-25 2015-05-27 力志国际光电股份有限公司 有机发光二极管照明装置
KR102356743B1 (ko) * 2013-11-29 2022-01-28 삼성디스플레이 주식회사 표시 장치
JP6665466B2 (ja) * 2015-09-26 2020-03-13 日亜化学工業株式会社 半導体発光素子及びその製造方法
US11233176B2 (en) 2017-03-08 2022-01-25 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device and semiconductor device package
KR102237158B1 (ko) * 2017-03-08 2021-04-07 엘지이노텍 주식회사 반도체 소자 및 반도체 소자 패키지
CN113053328B (zh) * 2021-03-23 2022-07-29 高创(苏州)电子有限公司 发光器件及其驱动方法和发光基板及其驱动方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197289A (ja) * 2003-12-26 2005-07-21 Nichia Chem Ind Ltd 窒化物半導体発光素子およびその製造方法
WO2006011458A1 (ja) * 2004-07-26 2006-02-02 Matsushita Electric Industrial Co., Ltd. 発光装置、並びに、これを備えた照明機器、表示機器および携帯電話
JP2006120913A (ja) * 2004-10-22 2006-05-11 Toyoda Gosei Co Ltd 半導体発光素子
JP2007103917A (ja) * 2005-09-07 2007-04-19 Toyoda Gosei Co Ltd 固体素子デバイス
JP2007123731A (ja) * 2005-10-31 2007-05-17 Toshiba Corp 半導体発光素子および半導体発光装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3267045B2 (ja) 1994-03-24 2002-03-18 日亜化学工業株式会社 Ｌｅｄ素子
US6107644A (en) * 1997-01-24 2000-08-22 Rohm Co., Ltd. Semiconductor light emitting device
JP4203132B2 (ja) * 1997-03-31 2008-12-24 シャープ株式会社 発光素子及びその製造方法
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
JP4122785B2 (ja) 2002-01-30 2008-07-23 日亜化学工業株式会社 発光素子
KR100576870B1 (ko) * 2004-08-11 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
KR100661614B1 (ko) * 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
US20070116423A1 (en) * 2005-11-22 2007-05-24 3M Innovative Properties Company Arrays of optical elements and method of manufacturing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197289A (ja) * 2003-12-26 2005-07-21 Nichia Chem Ind Ltd 窒化物半導体発光素子およびその製造方法
WO2006011458A1 (ja) * 2004-07-26 2006-02-02 Matsushita Electric Industrial Co., Ltd. 発光装置、並びに、これを備えた照明機器、表示機器および携帯電話
JP2006120913A (ja) * 2004-10-22 2006-05-11 Toyoda Gosei Co Ltd 半導体発光素子
JP2007103917A (ja) * 2005-09-07 2007-04-19 Toyoda Gosei Co Ltd 固体素子デバイス
JP2007123731A (ja) * 2005-10-31 2007-05-17 Toshiba Corp 半導体発光素子および半導体発光装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2159852A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169940A (zh) * 2010-02-17 2011-08-31 丰田合成株式会社 半导体发光元件
KR101238132B1 (ko) * 2010-02-17 2013-02-28 도요다 고세이 가부시키가이샤 반도체 발광 소자
US8552447B2 (en) 2010-02-17 2013-10-08 Toyoda Gosei Co., Ltd. Semiconductor light-emitting element
JP2012099700A (ja) * 2010-11-04 2012-05-24 Sanken Electric Co Ltd 半導体発光装置
JP2015095617A (ja) * 2013-11-14 2015-05-18 日亜化学工業株式会社 発光素子の製造方法
JP2017528007A (ja) * 2014-09-15 2017-09-21 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 反射層を伴うマウント上の発光デバイス

Also Published As

Publication number Publication date
TW200849680A (en) 2008-12-16
US20100102342A1 (en) 2010-04-29
US8330181B2 (en) 2012-12-11
JP5235878B2 (ja) 2013-07-10
EP2159852A1 (en) 2010-03-03
KR20100047219A (ko) 2010-05-07
TWI430478B (zh) 2014-03-11
CN101689587B (zh) 2012-04-25
CN101689587A (zh) 2010-03-31
EP2159852A4 (en) 2012-09-26
JPWO2008155960A1 (ja) 2010-08-26

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