CN102388442A - 原位形成的包括应变诱导合金及梯度掺杂分布的源漏区 - Google Patents

原位形成的包括应变诱导合金及梯度掺杂分布的源漏区 Download PDF

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Publication number
CN102388442A
CN102388442A CN201080014189XA CN201080014189A CN102388442A CN 102388442 A CN102388442 A CN 102388442A CN 201080014189X A CN201080014189X A CN 201080014189XA CN 201080014189 A CN201080014189 A CN 201080014189A CN 102388442 A CN102388442 A CN 102388442A
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China
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strain
forming
source
doping
layer
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Pending
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CN201080014189XA
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English (en)
Chinese (zh)
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J·亨齐尔
V·帕帕耶奥尔尤
U·格里布诺
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Priority claimed from PCT/EP2010/000492 external-priority patent/WO2010086154A1/en
Publication of CN102388442A publication Critical patent/CN102388442A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H10D30/0213—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation providing different silicide thicknesses on gate electrodes and on source regions or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0217—Manufacture or treatment of FETs having insulated gates [IGFET] forming self-aligned punch-through stoppers or threshold implants under gate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN201080014189XA 2009-01-30 2010-01-27 原位形成的包括应变诱导合金及梯度掺杂分布的源漏区 Pending CN102388442A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009006884.8 2009-01-30
DE102009006884A DE102009006884B4 (de) 2009-01-30 2009-01-30 Verfahren zur Herstellung eines Transistorbauelementes mit In-Situ erzeugten Drain- und Source-Gebieten mit einer verformungsinduzierenden Legierung und einem graduell variierenden Dotierstoffprofil und entsprechendes Transistorbauelement
US12/688,999 US8278174B2 (en) 2009-01-30 2010-01-18 In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile
US12/688,999 2010-01-18
PCT/EP2010/000492 WO2010086154A1 (en) 2009-01-30 2010-01-27 In situ formed drain and source regions including a strain inducing alloy and a graded dopant profile

Publications (1)

Publication Number Publication Date
CN102388442A true CN102388442A (zh) 2012-03-21

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CN201080014189XA Pending CN102388442A (zh) 2009-01-30 2010-01-27 原位形成的包括应变诱导合金及梯度掺杂分布的源漏区

Country Status (5)

Country Link
US (1) US8278174B2 (https=)
JP (1) JP5571693B2 (https=)
KR (1) KR101605150B1 (https=)
CN (1) CN102388442A (https=)
DE (1) DE102009006884B4 (https=)

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CN103531472A (zh) * 2012-07-03 2014-01-22 中芯国际集成电路制造(上海)有限公司 一种mosfet器件及其制备方法
CN103824885A (zh) * 2014-02-20 2014-05-28 重庆大学 带有源应变源的GeSnn沟道隧穿场效应晶体管
CN104752178A (zh) * 2013-12-30 2015-07-01 中芯国际集成电路制造(上海)有限公司 半导体器件的制备方法
CN105280699A (zh) * 2014-07-23 2016-01-27 台湾积体电路制造股份有限公司 源极/漏极结构及其形成方法
CN105575804A (zh) * 2014-10-08 2016-05-11 中国科学院微电子研究所 鳍式场效应晶体管及其制造方法
CN105762068A (zh) * 2014-12-19 2016-07-13 联华电子股份有限公司 半导体元件及其制作方法
CN107045987A (zh) * 2016-02-09 2017-08-15 格罗方德半导体公司 具有在源极/漏极区域中的扩散阻挡层的设备
CN109148586A (zh) * 2018-08-16 2019-01-04 中国电子科技集团公司第十三研究所 氧化镓场效应晶体管
CN109309009A (zh) * 2018-11-21 2019-02-05 长江存储科技有限责任公司 一种半导体器件及其制造方法
CN114256323A (zh) * 2020-09-21 2022-03-29 联华电子股份有限公司 高电压晶体管结构及其制造方法

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TWI680502B (zh) * 2016-02-03 2019-12-21 聯華電子股份有限公司 半導體元件及其製作方法
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US10128364B2 (en) * 2016-03-28 2018-11-13 Nxp Usa, Inc. Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
CN107785313B (zh) * 2016-08-26 2021-06-08 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10510838B2 (en) * 2017-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. High surface dopant concentration formation processes and structures formed thereby
US10263077B1 (en) * 2017-12-22 2019-04-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of fabricating a FET transistor having a strained channel
US10727320B2 (en) 2017-12-29 2020-07-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of manufacturing at least one field effect transistor having epitaxially grown electrodes
WO2019133013A1 (en) * 2017-12-30 2019-07-04 Intel Corporation Source to channel junction for iii-v metal-oxide-semiconductor field effect transistors (mosfets)
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CN111952188B (zh) * 2020-08-21 2024-06-18 中国科学院上海微系统与信息技术研究所 具有隔离层的场效应晶体管及其制备方法

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Cited By (17)

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Publication number Priority date Publication date Assignee Title
CN103531472A (zh) * 2012-07-03 2014-01-22 中芯国际集成电路制造(上海)有限公司 一种mosfet器件及其制备方法
CN103531472B (zh) * 2012-07-03 2016-05-11 中芯国际集成电路制造(上海)有限公司 一种mosfet器件及其制备方法
CN104752178A (zh) * 2013-12-30 2015-07-01 中芯国际集成电路制造(上海)有限公司 半导体器件的制备方法
CN103824885A (zh) * 2014-02-20 2014-05-28 重庆大学 带有源应变源的GeSnn沟道隧穿场效应晶体管
CN105280699B (zh) * 2014-07-23 2018-06-05 台湾积体电路制造股份有限公司 源极/漏极结构及其形成方法
CN105280699A (zh) * 2014-07-23 2016-01-27 台湾积体电路制造股份有限公司 源极/漏极结构及其形成方法
CN105575804A (zh) * 2014-10-08 2016-05-11 中国科学院微电子研究所 鳍式场效应晶体管及其制造方法
CN105575804B (zh) * 2014-10-08 2018-07-13 中国科学院微电子研究所 鳍式场效应晶体管及其制造方法
CN105762068A (zh) * 2014-12-19 2016-07-13 联华电子股份有限公司 半导体元件及其制作方法
CN107045987A (zh) * 2016-02-09 2017-08-15 格罗方德半导体公司 具有在源极/漏极区域中的扩散阻挡层的设备
CN107045987B (zh) * 2016-02-09 2020-08-21 格罗方德半导体公司 具有在源极/漏极区域中的扩散阻挡层的设备
CN109148586A (zh) * 2018-08-16 2019-01-04 中国电子科技集团公司第十三研究所 氧化镓场效应晶体管
CN109148586B (zh) * 2018-08-16 2021-05-18 中国电子科技集团公司第十三研究所 氧化镓场效应晶体管
CN109309009A (zh) * 2018-11-21 2019-02-05 长江存储科技有限责任公司 一种半导体器件及其制造方法
CN109309009B (zh) * 2018-11-21 2020-12-11 长江存储科技有限责任公司 一种半导体器件及其制造方法
CN114256323A (zh) * 2020-09-21 2022-03-29 联华电子股份有限公司 高电压晶体管结构及其制造方法
CN114256323B (zh) * 2020-09-21 2025-06-27 联华电子股份有限公司 高电压晶体管结构及其制造方法

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Publication number Publication date
US20100193882A1 (en) 2010-08-05
DE102009006884B4 (de) 2011-06-30
KR101605150B1 (ko) 2016-03-21
DE102009006884A1 (de) 2010-08-12
JP5571693B2 (ja) 2014-08-13
JP2012516557A (ja) 2012-07-19
US8278174B2 (en) 2012-10-02
KR20110113761A (ko) 2011-10-18

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Application publication date: 20120321