CN102349134A - 晶片加工用薄膜以及使用晶片加工用薄膜制造半导体装置的方法 - Google Patents

晶片加工用薄膜以及使用晶片加工用薄膜制造半导体装置的方法 Download PDF

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Publication number
CN102349134A
CN102349134A CN2010800110444A CN201080011044A CN102349134A CN 102349134 A CN102349134 A CN 102349134A CN 2010800110444 A CN2010800110444 A CN 2010800110444A CN 201080011044 A CN201080011044 A CN 201080011044A CN 102349134 A CN102349134 A CN 102349134A
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CN
China
Prior art keywords
film
adhesive
wafer
adhesive layer
adhesive phase
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Pending
Application number
CN2010800110444A
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English (en)
Chinese (zh)
Inventor
建部一贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Publication of CN102349134A publication Critical patent/CN102349134A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
CN2010800110444A 2009-03-13 2010-03-09 晶片加工用薄膜以及使用晶片加工用薄膜制造半导体装置的方法 Pending CN102349134A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009060572A JP2010219086A (ja) 2009-03-13 2009-03-13 ウエハ加工用フィルム及びウエハ加工用フィルムを用いて半導体装置を製造する方法
JP2009-060572 2009-03-13
PCT/JP2010/053880 WO2010104071A1 (ja) 2009-03-13 2010-03-09 ウエハ加工用フィルム及びウエハ加工用フィルムを用いて半導体装置を製造する方法

Publications (1)

Publication Number Publication Date
CN102349134A true CN102349134A (zh) 2012-02-08

Family

ID=42728360

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800110444A Pending CN102349134A (zh) 2009-03-13 2010-03-09 晶片加工用薄膜以及使用晶片加工用薄膜制造半导体装置的方法

Country Status (5)

Country Link
JP (1) JP2010219086A (ja)
KR (1) KR101333341B1 (ja)
CN (1) CN102349134A (ja)
TW (1) TWI519621B (ja)
WO (1) WO2010104071A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102959688A (zh) * 2010-06-18 2013-03-06 日立化成工业株式会社 粘接片
CN105940488A (zh) * 2014-02-21 2016-09-14 株式会社村田制作所 电子部件供给体及其制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101397686B1 (ko) * 2010-12-06 2014-05-22 제일모직주식회사 기재필름 및 이를 이용한 반도체용 접착필름
JP5916295B2 (ja) * 2011-04-22 2016-05-11 古河電気工業株式会社 ウエハ加工用テープおよびウエハ加工用テープを用いて半導体装置を製造する方法
US10008405B2 (en) 2012-12-26 2018-06-26 Hitachi Chemical Company, Ltd Expansion method, method for manufacturing semiconductor device, and semiconductor device
JP6021687B2 (ja) * 2013-02-25 2016-11-09 株式会社ディスコ 積層ウェーハの加工方法
KR102455987B1 (ko) * 2014-07-22 2022-10-18 아피쿠 야마다 가부시키가이샤 성형 금형, 성형 장치, 성형품의 제조 방법 및 수지 몰드 방법
CN112967992B (zh) * 2020-12-07 2022-09-23 重庆康佳光电技术研究院有限公司 外延结构的转移方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1806326A (zh) * 2004-03-15 2006-07-19 日立化成工业株式会社 切割用芯片粘贴薄膜
JP2007019151A (ja) * 2005-07-06 2007-01-25 Furukawa Electric Co Ltd:The ウエハ加工用テープおよびそれを用いたチップの製造方法
CN1906737A (zh) * 2004-08-03 2007-01-31 古河电气工业株式会社 晶片加工用带
CN1993809A (zh) * 2004-08-03 2007-07-04 古河电气工业株式会社 半导体器件制造方法及晶片加工带
JP2008303386A (ja) * 2007-05-08 2008-12-18 Hitachi Chem Co Ltd 接着シート及びその製造方法並びに接着シートを用いた半導体装置の製造方法及び半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3669196B2 (ja) * 1998-07-27 2005-07-06 日東電工株式会社 紫外線硬化型粘着シート
JP4107417B2 (ja) * 2002-10-15 2008-06-25 日東電工株式会社 チップ状ワークの固定方法
WO2005057644A1 (ja) * 2003-12-15 2005-06-23 The Furukawa Electric Co., Ltd. ウェハ加工用テープおよびその製造方法
JP2005203749A (ja) * 2003-12-15 2005-07-28 Furukawa Electric Co Ltd:The ウェハ加工用テープおよびその製造方法
JP4781635B2 (ja) * 2004-03-30 2011-09-28 日東電工株式会社 レーザー加工品の製造方法及びレーザー加工用保護シート
JPWO2008047610A1 (ja) * 2006-10-06 2010-02-25 住友ベークライト株式会社 半導体用フィルム、半導体用フィルムの製造方法および半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1806326A (zh) * 2004-03-15 2006-07-19 日立化成工业株式会社 切割用芯片粘贴薄膜
CN1906737A (zh) * 2004-08-03 2007-01-31 古河电气工业株式会社 晶片加工用带
CN1993809A (zh) * 2004-08-03 2007-07-04 古河电气工业株式会社 半导体器件制造方法及晶片加工带
JP2007019151A (ja) * 2005-07-06 2007-01-25 Furukawa Electric Co Ltd:The ウエハ加工用テープおよびそれを用いたチップの製造方法
JP2008303386A (ja) * 2007-05-08 2008-12-18 Hitachi Chem Co Ltd 接着シート及びその製造方法並びに接着シートを用いた半導体装置の製造方法及び半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102959688A (zh) * 2010-06-18 2013-03-06 日立化成工业株式会社 粘接片
CN102959688B (zh) * 2010-06-18 2016-04-06 日立化成株式会社 粘接片
CN105940488A (zh) * 2014-02-21 2016-09-14 株式会社村田制作所 电子部件供给体及其制造方法
CN105940488B (zh) * 2014-02-21 2018-06-26 株式会社村田制作所 电子部件供给体及其制造方法

Also Published As

Publication number Publication date
KR101333341B1 (ko) 2013-11-28
TW201040242A (en) 2010-11-16
TWI519621B (zh) 2016-02-01
JP2010219086A (ja) 2010-09-30
WO2010104071A1 (ja) 2010-09-16
KR20110129952A (ko) 2011-12-02

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Application publication date: 20120208

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