CN102959688A - 粘接片 - Google Patents

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Publication number
CN102959688A
CN102959688A CN2011800279584A CN201180027958A CN102959688A CN 102959688 A CN102959688 A CN 102959688A CN 2011800279584 A CN2011800279584 A CN 2011800279584A CN 201180027958 A CN201180027958 A CN 201180027958A CN 102959688 A CN102959688 A CN 102959688A
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CN
China
Prior art keywords
adhesive linkage
bonding film
die bonding
adhesive
film
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Granted
Application number
CN2011800279584A
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English (en)
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CN102959688B (zh
Inventor
中村祐树
宫原正信
片山阳二
玉置刚士
畠山惠一
池谷卓二
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Lishennoco Co ltd
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Hitachi Chemical Co Ltd
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Publication of CN102959688A publication Critical patent/CN102959688A/zh
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Publication of CN102959688B publication Critical patent/CN102959688B/zh
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    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

半导体装置制造用粘接片1，具备：基材薄膜10、配置于基材薄膜10上的粘接层20、配置于粘接层20上并且具有露出粘接层20的开口30a的粘接层30和配置于粘接层20中从开口30a露出的部分25上的芯片接合薄膜40，芯片接合薄膜40的外周的至少一部分与粘接层30相接。

Description

粘接片
技术领域
本发明关于粘接片。
背景技术
半导体装置的制造工序中，有一道是将经过所需前处理而形成回路的半导体晶圆切割分离为多个芯片的切割（dicing）工序。该工序中，在被称为环形框架的圆环状或矩形环状的框架上粘贴固定晶圆用的切割片，在该切割片上粘贴半导体晶圆后，将半导体晶圆以回路为单位进行切割，得到半导体芯片。接着，通过焊接机进行扩片工序、芯片安装工序，再进行焊线工序、压模工序，制造出半导体装置。
近年来，有人提出，在半导体装置制造时，使用切割片以及芯片粘接薄膜（DieAttachFilm）一体化的芯片粘接薄膜一体型片的方法。芯片粘接薄膜一体型片是兼具切割片功能和将芯片固定在引线框架或配线基板等的粘接剂功能的多层切割片，较之于以往的方法，具有可缩短加工工序等优点。
但是，随着近年来半导体元件的高集成化·大芯片化、薄型化，切割后的芯片的拾取作业变得困难的情况增加。用于这些用途的切割片，要求对于切割后的半导体芯片（例如Si芯片）-芯片接合薄膜（Die bonding Film）层积品为微粘接。但是，令切割片微粘接化的话，对于环形框架的粘结性也较弱，有时会出现切割工序中切割片与环形框架剥离的情况。
因此，必须要有具有更高切割性能的胶带，开发出了在切割工序中能够以高粘附力保持晶圆（芯片）、在拾取工序中可通过紫外线照射等降低粘附力、方便地拾取芯片的切割片（例如，参照下述专利文献1、2）。
【专利文献1】日本专利特开昭60-196956号公报
【专利文献2】日本专利特开昭61-28572号公报
发明内容
但是，专利文献1的紫外线固化型切割片中，通过仅对期望部分照射紫外线而降低该部分的粘附力，但有时难以仅对期望部分高精度地照射紫外线。因此，有时难以得到在切割工序中有效保持晶圆和环形框架的保持力与切割后方便地剥离芯片的易易剥离性两者平衡兼备的粘接层。
此外，专利文献2中，由于芯片接合薄膜仅层积在粘结性低的粘接层上，因此存在切割工序中芯片接合薄膜的外周部分从粘接层剥离、粘贴在芯片接合薄膜上的芯片飞散的问题。
本发明鉴于上述问题，目的是提供可在维持拾取工序中的芯片接合薄膜以及切割片间的易剥离性的同时，可抑制切割工序中的环形框架剥离以及芯片飞散的粘接片。
即，本发明提供一种粘接片，具备：基材、配置于基材上的第1粘接层、配置于第1粘接层上并且具有露出第1粘接层的开口的第2粘接层、配置于第1粘接层中从上述开口露出部分的芯片接合薄膜，芯片接合薄膜的外周的至少一部分与第2粘接层相接。
本发明的粘接片中，该片除了第1粘接层还具备第2粘接层，因而可以个别调整第1粘接层的粘附力与第2粘接层的粘附力。因此，可以为了方便拾取工序中芯片接合薄膜以及切割片间的剥离而调整第1粘接层的粘附力的同时，为了切割工序中不令环形框架与第2粘接层剥离而调整第2粘接层的粘附力。另外，本发明的粘接片中，通过芯片接合薄膜的外周的至少一部分与第2粘接层相接，可以令粘附力经过调整的第2粘接层与芯片接合薄膜的外周粘接。因此，可以抑制切割工序中芯片接合薄膜的外周部分成为剥离起点、芯片接合薄膜剥离，因此可以抑制芯片飞散。
优选芯片接合薄膜的外周的至少一部分与第2粘接层重叠。此时，可以进一步抑制切割工序中芯片接合薄膜的外周部分成为剥离起点、芯片接合薄膜剥离，因此可以进一步抑制芯片飞散。此外，根据此种结构，将粘接片卷成卷状时，通过芯片接合薄膜与第2粘接层的重叠部分可以保护芯片接合薄膜的中央部分，可以抑制卷痕转印至芯片接合薄膜。
此外，也优选第2粘接层的内周的至少一部分与芯片接合薄膜重叠。此种结构中，将粘接片卷成卷状时，也可通过芯片接合薄膜与第2粘接层的重叠部分保护芯片接合薄膜的中央部分，可以抑制卷痕转印至芯片接合薄膜。
芯片接合薄膜与第2粘接层的重叠部分的宽度优选为0.1~25mm。
本发明的粘接片用于切割加工以及芯片接合加工。
根据本发明，可提供在拾取工序中维持芯片接合薄膜及切割片间的易剥离性的同时，可抑制切割工序中的环形框架剥离以及芯片飞散的粘接片。本发明中，由于可以方便地拾取单片化的带芯片接合薄膜的半导体芯片，可以提高半导体装置的成品率。
附图说明
【图1】显示粘接片的一种实施方式的平面图。
【图2】沿图1的II-II线的截面示意图。
【图3】显示粘接片上粘贴了半导体晶圆以及环形框架的层积物的截面示意图。
【图4】显示用切割刀具切割半导体晶圆的工序的截面示意图。
【图5】显示拾取单片化的带芯片接合薄膜的半导体芯片的工序的截面示意图。
【图6】显示使用了拾取的带芯片接合薄膜的半导体芯片的半导体装置的截面示意图。
【图7】（a）为显示以往的粘接片的一例的平面图，（b）为（a）的X-X线截面图。
【图8】显示图7所示的粘接片的卷轴体的侧视图。
【图9】（a）为显示图7所示的粘接片中的卷痕样子的平面图，（b）为（a）的Y-Y线截面图。
【图10】（a）为显示以往的粘接片的其他例子的平面图，（b）为（a）的Z-Z线截面图。
【图11】显示粘接片的变形例的截面示意图。
符号说明
1，2…半导体装置制造用粘接片、10…基材薄膜、20…粘接层（第1粘接层）、25…从开口露出的部分、30…粘接层（第2粘接层）、30a…开口、40，45…芯片接合薄膜、50…环形框架、60…半导体晶圆、100…半导体装置。
具体实施方式
以下根据需要参照附图详细说明本发明的适宜的实施方式。图中，相同或同等的构成要素赋予相同符号，适当省略重复说明。
图1为显示粘接片的一种实施方式的平面图，图2为沿图1的II-II线的截面示意图。图3为显示粘接片上粘贴了半导体晶圆及环形框架的层积物的截面示意图。
图1、2所示的半导体装置制造用粘接片（芯片粘接薄膜一体型片）1，具备长的基材薄膜10、长的粘接层（第1粘接层）20、粘接层（第2粘接层）30、芯片接合薄膜40。半导体装置制造用粘接片1上，如图3所示，配置有环形框架（切割环）50、半导体晶圆60。
作为基材薄膜10，可使用例如聚乙烯薄膜、聚丙烯薄膜、聚氯乙烯薄膜、聚对苯二甲酸乙二醇酯薄膜、乙烯-醋酸乙烯酯共聚物薄膜、离子聚合物树脂薄膜等。基材薄膜10的厚度优选例如15~200μm左右。
粘接层20配置为覆盖基材薄膜10的整个一侧主面。粘接层20的厚度优选例如5~50μm左右。作为构成粘接层20的粘接剂，可使用例如丙烯系粘接剂、橡胶系粘接剂、硅酮系粘接剂等。
粘接层20是拾取工序中可从芯片接合薄膜40方便地剥离的弱粘结性的压敏粘接剂层。粘接层20与芯片接合薄膜40的粘附力优选0.6N/25mm以下，更优选0.4N/25mm以下，进一步优选0.3N/25mm以下。粘接层20具有此种粘附力的话，拾取工序中粘接层20及芯片接合薄膜40间可方便地剥离。粘接层20的粘附力可使用例如Orientec（オリエンテック）制造的“Tensilon（テンシロン）拉伸强度试验机RTA-100型”或与此类似的试验机，以在垂直方向（90°剥离）以200mm/min的速度剥离时的剥离力测定。
粘接层30沿基材薄膜10的长度方向每隔一定间隔配置于粘接层20上，配置有多个。粘接层30配置于粘接层20中计划粘贴环形框架50的区域。
各粘接层30例如呈圆环状，各粘接层30的中央部上，设置有贯穿粘接层30的表面至背面的截面为圆形的开口30a。粘接层20中的从开口30a露出的部分25，是计划粘贴芯片接合薄膜40的区域。粘接层30的开口30a的直径优选在半导体晶圆60的晶圆直径以上，更优选大于半导体晶圆60的晶圆直径。此外，粘接层30的开口30a的直径优选在环形框架50的开口50a的内径尺寸以下，更优选小于环形框架50的开口50a的内径尺寸。粘接层30的开口30a的直径例如为210mm左右。粘接层30的厚度优选例如5~30μm左右。
粘接层30是具有粘结性的环形框架固定用的强粘结性层，该粘结性可在切割工序中有效保持环形框架50。作为构成粘接层30的粘接剂，可使用例如丙烯酸系粘接剂、橡胶系粘接剂、硅酮系粘接剂等。粘接层30的粘附力调整为大于粘接层20的粘附力。
粘接层30与环形框架50之间的粘附力优选小于粘接层30与粘接层20之间的粘附力且在0.6N/25mm以上。粘接层30与环形框架50之间的粘附力更优选0.8N/25mm以上，进一步优选1.0N/25mm以上。粘接层30具有此种粘附力的话，可以进一步抑制切割工序中粘接层30与环形框架50剥离。粘接层30的粘附力可使用例如Orientec制造的「Tensilon拉伸强度试验机RTA-100型」或与此类似的试验机，以在垂直方向（90°剥离）以200mm/min的速度剥离时的剥离力测定。
粘接层20的短边方向的两端部上，配置有沿粘接层30的形状与粘接层30相分离的粘接层32。粘接层32由与粘接层30同样的粘接剂构成。
芯片接合薄膜40例如呈圆形。芯片接合薄膜40的厚度优选例如1~100μm左右。芯片接合薄膜40含有例如热固性成分和/或热塑性树脂以及填料。热固性成分是可以通过加热而交联形成固化体的成分，例如，含有热固性树脂，含有任意的该热固性树脂的固化剂。作为热固性树脂，可使用以往公知的，并无特别限制，其中，基于作为半导体周边材料的方便性（高纯度品的易获取、品种多、易控制反应性）的角度，优选环氧树脂以及1个分子中具有至少2个热固性酰亚胺基的酰亚胺化合物。环氧树脂通常与环氧树脂固化剂并用。
环氧树脂优选为具有2个以上环氧基的化合物。作为环氧树脂，基于固化性和固化物特性的角度，优选苯酚的缩水甘油醚型的环氧树脂。作为苯酚的缩水甘油醚型的环氧树脂，可举出例如、双酚A、双酚AD、双酚S、双酚F或卤化双酚A与表氯醇的缩合物、苯酚线性酚醛树脂的缩水甘油醚、甲酚线性酚醛树脂的缩水甘油醚以及双酚A线性酚醛树脂的缩水甘油醚。其中，线性酚醛型环氧树脂（甲酚线性酚醛树脂的缩水甘油醚以及苯酚线性酚醛树脂的缩水甘油醚等）的固化物的交联密度高、薄膜热时的粘接强度高，因此较为理想。它们可1种单独或多种组合使用。
作为环氧树脂固化剂，可举出例如，苯酚系化合物、脂肪族胺、脂环族胺、芳香族多胺、聚酰胺、脂肪族酸酐、脂环族酸酐、芳香族酸酐、二氰基二酰胺、有机酸二酰肼、三氟化硼胺络合物、咪唑类以及叔胺。其中优选苯酚系化合物，而其中特别优选具有2个以上酚羟基的苯酚系化合物。更具体的，优选萘酚线性酚醛树脂以及三苯酚线性酚醛树脂。将这些苯酚系化合物用作环氧树脂固化剂的话，可有效降低封装加热时芯片表面以及装置的污染和称为臭气源头的排气的产生。
作为热塑性树脂，可举出例如聚酰亚胺树脂、聚酰胺酰亚胺树脂、苯氧树脂、丙烯酸树脂、聚酰胺树脂以及聚氨酯树脂。它们可1种单独或多种组合使用。
填料优选为无机填料。更具体的，优选为含有选自氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅、非晶性二氧化硅以及锑氧化物构成的群的至少1种无机材料的无机填料。其中，为提高热传导性，优选氧化铝、氮化铝、氮化硼、结晶性二氧化硅以及非晶性二氧化硅。基于调整熔融粘度和赋予触变性的目的，优选氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、结晶性二氧化硅以及非晶性二氧化硅。此外，为提高耐湿性，优选氧化铝、二氧化硅、氢氧化铝以及锑氧化物。它们可1种单独或多种组合使用。
芯片接合薄膜40以与开口30a同心的方式配置于粘接层30的开口30a内，覆盖整个从粘接层20上的开口30a露出的部分25。此外，芯片接合薄膜40的外周部分40a从开口30a突出，在与粘接层30表面的内周侧的边缘部相接的状态下与粘接层30重叠。即，芯片接合薄膜40具有与粘接层30重叠的外周部分40a和不与粘接层30重叠的中央部分40b。芯片接合薄膜40的外周的至少一部分与粘接层30相接的话，可以抑制切割工序中芯片接合薄膜40的剥离，基于进一步抑制切割工序中的剥离的观点，优选外周部分40a的至少一部分与粘接层30重叠，更优选整个外周部分40a沿芯片接合薄膜40的外周与粘接层30重叠。
粘接层30与芯片接合薄膜40的重叠范围（宽度）优选为0.1~25mm，更优选0.5~15mm，进一步优选1.0~10mm。芯片接合薄膜40的重叠范围在此范围的话，层压工序中，可仅将芯片接合薄膜40的与粘接层20相接的部分（上述中央部分40b）与半导体晶圆60粘贴，且可以进一步抑制切割工序中芯片接合薄膜40的外周部分40a成为从粘接层30剥离的剥离起点，因此可以进一步抑制半导体芯片飞散。
粘接层30与芯片接合薄膜40的粘附力优选0.8N/25mm以上，更优选1.0N/25mm以上，进一步优选1.2N/25mm以上。粘接层30具有此种粘附力的话，可以进一步抑制切割工序中粘接层30与芯片接合薄膜40剥离。粘接层30的粘附力可使用例如Orientec制造的「Tensilon拉伸强度试验机RTA-100型」或与此类似的试验机，以在垂直方向（90°剥离）以200mm/min的速度剥离时的剥离力测定。
环形框架50通常为金属制或塑料制的成型体。环形框架50呈例如近圆环状，环形框架50的外周的一部分形成有引导用的平坦缺口部（未图示）。环形框架50在中央部有开口50a。环形框架50的开口50a的内径尺寸（直径）当然比被切割的半导体晶圆60的晶圆直径大一些，调整为在粘接层30的开口30a的直径以上。此外，环形框架50的形状不限定于圆环状，也可使用以往所使用的各种形状（例如矩形环状）。
环形框架50配置于粘接层30上，使开口50a与开口30a成同心。环形框架50配置为与芯片接合薄膜40中的与粘接层30重叠的部分（外周部分40a）不重叠。
半导体晶圆60与粘接层30和芯片接合薄膜40的外周部分40a不重叠，配置于芯片接合薄膜40的中央部分40b上。半导体晶圆60上经过所需的前处理而形成有回路。切割工序中，半导体晶圆60以回路为单位成为单片，得到半导体芯片。
半导体装置制造用粘接片1用于切割加工以及芯片接合加工。半导体装置制造用粘接片1中，该片除了粘接层20以外还具备有粘接层30，从而可以个别调整粘接层20的粘附力和粘接层30的粘附力。因此，可以在调整粘接层20的粘附力使得拾取工序中芯片接合薄膜40以及切割片的粘接层20间的剥离变得容易的同时，也可以调整粘接层30的粘附力使得切割工序中环形框架50不会从粘接层30剥离。另外，半导体装置制造用粘接片1中，通过芯片接合薄膜40的外周部分40a与粘接层30相接，粘附力经过调整的粘接层30可与外周部分40a粘接。因此，可以抑制切割工序中芯片接合薄膜40的外周部分40a成为剥离起点、芯片接合薄膜40剥离，因而可以抑制芯片飞散。另外，半导体装置制造用粘接片1中，通过芯片接合薄膜40的外周部分40a与粘接层30重叠，可以进一步抑制切割工序中芯片接合薄膜40剥离，因而可以进一步抑制芯片飞散。
接着说明使用了半导体装置制造用粘接片1的半导体装置的制造方法。图4为显示用切割刀具切割半导体晶圆的工序的截面示意图。图5为显示拾取单片化的带芯片接合薄膜的半导体芯片的工序的截面示意图。图6为显示使用了拾取的带芯片接合薄膜的半导体芯片的半导体装置的截面示意图。
半导体装置制造用粘接片1上层积了半导体晶圆60的层积体，可任意使用层积有芯片接合薄膜40与基材层的粘接薄膜、以及依次层积有芯片接合薄膜40、粘接层（粘接层20以及粘接层30）和基材层的粘接薄膜。
使用层积有芯片接合薄膜40与基材层的粘接薄膜时，可使用例如以下（1）、（2）所示的任意方法。
（1）首先，将粘接薄膜的芯片接合薄膜40与半导体晶圆60贴合。接着，剥离粘接薄膜的基材层，贴合芯片接合薄膜40与层积有粘接层（粘接层20以及粘接层30）和基材层的切割胶带的粘接层。
（2）首先，将粘接薄膜的芯片接合薄膜40与层积有粘接层（粘接层20以及粘接层30）和基材层的切割胶带的粘接层贴合。接着，剥离粘接薄膜的基材层，贴合芯片接合薄膜40与半导体晶圆60。
使用芯片接合薄膜40与粘接层和基材层按序层积的粘接薄膜时，通过贴合粘接薄膜的芯片接合薄膜40与半导体晶圆60，可以得到半导体装置制造用粘接片1上层积有半导体晶圆60的层积体。
此外，上述任意方法中，粘接层（粘接层20以及粘接层30）与芯片接合薄膜40被层积为芯片接合薄膜40的外周部分40a的至少一部分与粘接层30相接，优选重叠层积。此外，半导体晶圆60配置为不与粘接层30和芯片接合薄膜40的外周部分40a重叠。
通过上述任意方法得到半导体晶圆60层积于半导体装置制造用粘接片1的层积体后，在半导体装置制造用粘接片1的粘接层30上配置环形框架50。
接着，如图4所示，将上述层积体用切断装置（切片机）的旋转刀片70切断，得到芯片接合薄膜45与半导体芯片65粘接构成的期望大小的带粘接薄膜的半导体芯片80。切割工序中，可使用将粘接薄膜完全切断的全切法，也可使用不将粘接薄膜完全切断、保留一部分的施工方法（半切法）。
切断半导体晶圆60时使用的切片机和旋转刀片（刀片），可使用一般的市售品。作为切片机，可使用例如DISCO公司（株式会社ディスコ）制造的全自动切割机6000（フルオートマチックダイシングソー6000）系列和半自动切割机3000（セミオートマチックダイシングソー3000）系列等。作为刀片，可使用例如DISCO公司制造的切割刀片NBC-ZH05系列和NBC-ZH系列等。
此外，在切断半导体装置制造用粘接片1与半导体晶圆60的层积物的工序中，不仅可使用例如DISCO公司制造的全自动切割机6000系列等的旋转刀片，还可使用例如DISCO公司制造的全自动激光切割机7000（フルオートマチックレーザソー7000）系列等激光器。
切割工序后，如图5所示，在粘接层20与芯片接合薄膜45的界面剥离，拾取带粘接薄膜的半导体芯片80。然后，将拾取的带粘接薄膜的半导体芯片80如图6所示安装在支撑基材85上。
然后，带粘接薄膜的半导体芯片80的半导体芯片65通过导线90与支撑基材85上的外部连接端子（未图示）连接。之后，将包含半导体芯片65的层积体通过封装树脂层95封装，得到图6所示的半导体装置100。
此外，本发明不限定于上述实施方式。例如，粘接层30不限定于圆环状，也可以为矩形环状。此时，通常使用具有矩形环状的环形框架，使用矩形的芯片接合薄膜。此外，粘接层30不限定于在粘接层20上配置多个，只要根据半导体装置100的制造个数而在粘接层20上至少配置一个即可。
【实施例1】
以下通过实施例更详细地说明本发明，但本发明不限定于此。
1．芯片接合薄膜的制作
在具备温度计、搅拌机以及氯化钙管的500ml的四口烧瓶中，加入醚二胺2000（エーテルジアミン2000）（BASF公司制造）（0.02mol）、1，12-二氨基十二烷（0.08mol）以及N-甲基-2-吡咯烷酮150g，于60℃搅拌，溶解二胺。二胺溶解后，少量一点一点地添加2，2-双［4-（3，4-二羧基苯氧基）苯基］丙烷二酸酐（0.1mol）。60℃反应1小时后，一边通入氮气一边以170℃加热，将水与溶剂的一部分共沸除去。得到作为聚酰亚胺树脂的NMP溶液的该反应液。
在上述得到的聚酰亚胺树脂的NMP溶液（含聚酰亚胺树脂为100质量份）中，加入甲酚线性酚醛型环氧树脂（东都化成制造）4质量份、4，4’-［1-［4-［1-（4-羟基苯基）-1-甲基乙基］苯基］亚乙基］双酚（本州化学制造）2质量份、四苯硼酸四苯基鏻（东京化成制造）0.5质量份。再加入相对于固体成分的总质量为25质量%的氮化硼填料（水岛合金铁制造），加入相对于固体成分的总质量为3质量%的Aerosil Filler（アエロジルフィラー）R972（Aerosil公司（日本アエロジル）制造），充分混炼得到清漆。将调合的清漆涂布在经过剥离处理的聚对苯二甲酸乙二醇酯薄膜上，80℃加热30分钟，接着120℃加热30分钟。然后，在室温（25℃）下剥离聚对苯二甲酸乙二醇酯薄膜，得到作为芯片接合薄膜的厚25μm的粘接薄膜。
2．切割胶带的制作
（1）强粘接层
使用丙烯酸丁酯、丙烯酸乙酯和丙烯腈作为主单体、使用丙烯酸羟乙酯作为官能团单体，通过溶液聚合法得到作为粘接剂的丙烯酸共聚物。该合成的丙烯酸共聚物的重均分子量为70万，玻璃化温度为-30℃。对于该丙烯酸共聚物100质量份，添加多官能异氰酸酯交联剂（日本ポリウレタン工业株式会社制造）2.2质量份，调制粘接剂溶液。在涂布有硅酮系脱模剂的双轴延伸聚酯薄膜隔片（厚度25μm）上，涂布粘接剂溶液，使干燥时的粘接剂厚度为20μm。接着，将粘接剂溶液于80℃干燥30分钟后，将涂布了硅酮系脱模剂的另一双轴延伸聚酯薄膜隔片（厚度25μm）层压在粘接剂面上。
（2）弱粘接层与基材的层积品
使用丙烯酸-2-乙基己酯和甲基丙烯酸甲酯作为主单体、使用甲基丙烯酸羟基乙酯和丙烯酸作为官能团单体，通过溶液聚合法得到作为粘接剂的丙烯酸共聚物。该合成的丙烯酸共聚物的重均分子量为40万，玻璃化温度为-38℃。对于该丙烯酸共聚物100质量份，添加多官能异氰酸酯交联剂（三菱化学株式会社制造）15质量份，调制粘接剂溶液。在涂布有硅酮系脱模剂的双轴延伸聚酯薄膜隔片（厚度38μm）上，涂布粘接剂溶液，使干燥时的粘接剂厚度为10μm。接着，将粘接剂溶液于80℃干燥30分钟后，再将聚烯烃薄膜（厚度100μm）层压在粘接剂面上。将该多层薄膜在室温放置1周，充分老化后，用于试验。
（3）强粘接层与基材的层积品
使用丙烯酸丁酯、丙烯酸乙酯和丙烯腈作为主单体、使用丙烯酸羟乙酯作为官能团单体，通过溶液聚合法得到作为粘接剂的丙烯酸共聚物。该合成的丙烯酸共聚物的重均分子量为70万，玻璃化温度为-30℃。对于该丙烯酸共聚物100质量份，添加多官能异氰酸酯交联剂（日本ポリウレタン工业株式会社制造）2.2质量份，调制粘接剂溶液。在涂布有硅酮系脱模剂的双轴延伸聚酯薄膜隔片（厚度25μm）上，涂布粘接剂溶液，使干燥时的粘接剂厚度为20μm。接着，将粘接剂溶液于80℃干燥30分钟后，再将聚烯烃薄膜（厚度100μm）层压在粘接剂面上。将该多层薄膜在室温放置1周，充分老化后，用于试验。
3．半导体晶圆的层积品的制作
（实施例1）
在弱粘接层与基材的层积品（切割胶带）的弱粘接层上，粘贴作为环形框架固定用的粘接层的切割为内径210mm的圆环状的上述（1）的强粘接层。然后，粘贴加工为直径220mm的圆形的芯片接合薄膜，使其与强粘接层成同心，制为半导体装置制造用粘接片。将直径8英寸、厚50μm的半导体晶圆在60℃的热板上与半导体装置制造用粘接片的芯片接合薄膜粘接，得到半导体晶圆的层积品。
（比较例1）
除了没有层积强粘接层以外，与实施例1相同地得到半导体晶圆的层积品。
（比较例2）
除了使用强粘接层与基材的层积品（切割胶带）代替弱粘接层与基材的层积品，且没有层积强粘接层以外，与实施例1相同地得到半导体晶圆的层积品。
（比较例3）
除了将芯片接合薄膜加工为直径205mm的圆形，且没有设置芯片接合薄膜与强粘接层的重叠部分以外，与实施例1相同地得到半导体晶圆的层积品。
（比较例4）
除了使用强粘接层与基材的层积品（切割胶带）代替弱粘接层与基材的层积品、将芯片接合薄膜加工为直径205mm的圆形，且没有设置芯片接合薄膜与强粘接层的重叠部分以外，与实施例1相同地得到半导体晶圆的层积品。
上述实施例1以及比较例1~4制作的试样中，半导体晶圆的贴合使用株式会社JCM公司制造的「DM-300-H」于60℃下进行。
4．各种评价
（切割工序）
使用DISCO公司制造的全自动切割机“DFD-6361”，切断上述实施例1以及比较例1~4制作的试样。试样的切断中，使用了具有直径250mm的开口的圆环状的环形框架。试样的切断中，采用以1片刀片完成加工的单刀切割方式，刀片使用了DISCO公司制造的切割刀片“NBC-ZH104F-SE 27HDBB”。试样的切断条件是，刀片转速45,000rpm、切断速度50mm/s。切断时的刀片高度设定为切入切割基材20μm（80μm）。半导体晶圆的切断尺寸为10×10mm。
切割工序中环形框架与粘接层间剥离时或切割工序中出现芯片接合薄膜剥离或半导体芯片飞散时，各自判定为不佳（B），未发生上述问题的判定为良好（A）。
（拾取工序）
对于用上述方法制为单片的芯片的拾取性，使用Renesas Eastern Japan Semiconductor（ルネサス東日本セミコンダクタ）公司制造的通用贴片机“DB-730”进行评价。拾取用夹头使用マイクロメカニクス公司制造的“RUBBER TIP 13-087E-33（尺寸：10×10mm）”，顶针使用マイクロメカニクス公司制造的“EJECTOR NEEDLESEN2-83-05（直径：0.7mm、尖端形状：直径350μm的半圆）”。顶针配置9根，针中心间隔4.2mm。以拾取时的针的顶推速度：10mm/s、顶推高度：1000μm的条件评价拾取性。若连续拾取100芯片，未发生芯片破裂、漏拾等则判定为良好（A），即使有1芯片发生芯片破裂或漏拾等，也判定为不佳（B）。
上述实施例1以及比较例1~4制作的试样以及切割工序以及拾取工序中的各种评价结果如表1所示。
【表1】
Figure BDA00002536567200111
比较例1~4中，芯片接合薄膜与环形框架固定用强粘接层没有接触部分或重叠部分。
比较例1中，粘接层的环形框架配置部分与环形框架的附着力弱，切割工序中环形框架与粘接层剥离，且切割工序中出现芯片接合薄膜剥离，因此不理想。比较例2中，切割胶带与芯片接合薄膜的附着力高，拾取工序中出现芯片破裂和漏拾，因此不理想。比较例3中，强粘接层与芯片接合薄膜没有接触部分和重叠部分，因此切割工序中出现芯片接合薄膜剥离，因此不理想。比较例4中，切割胶带与芯片接合薄膜的附着力高，拾取工序中出现芯片破裂和漏拾，因此不理想。
从以上结果可以确认，通过制造半导体装置时使用本发明的半导体装置制造用粘接片，可在拾取工序中维持芯片接合薄膜以及切割片间的易剥离性的同时，抑制切割工序中的环形框架剥离以及芯片飞散。本发明中，由于可以方便地拾取带芯片接合薄膜的半导体芯片，因此可以提高半导体装置的成品率。
但是，上述的半导体装置制造用粘接片1，除了具有维持拾取工序中的芯片接合薄膜以及切割片间的易剥离性以及抑制切割工序中的环形框架剥离以及芯片飞散的效果以外，也有助于解决卷成卷状时的芯片接合薄膜的卷痕问题。以下说明此点。
以往进行了预切加工的粘接片200，例如如图7所示，基材薄膜201上层积有圆形的芯片接合薄膜202，另外，层积有覆盖芯片接合薄膜202的圆形的粘合层203。
此种粘接片200例如如图8所示，卷在圆筒状的卷芯211上形成卷状时，芯片接合薄膜202与粘合层203的重叠部分的厚度大于粘接片200的其他部分的厚度，因此有时卷取时的张力过度地施加于芯片接合薄膜202上。因此，如图9所示，芯片接合薄膜202的中央部分有时会有卷痕212转印，损伤芯片接合薄膜202的平滑性。卷痕212随着芯片接合薄膜202的厚度增加而容易出现，出现卷痕212的话，将粘接片200粘贴到半导体晶圆时半导体晶圆与芯片接合薄膜202间会有空气进入，对于半导体装置的制造可能会有问题。
此外，作为以往的粘接片，如图10所示，还有经预切加工的芯片接合薄膜302以及粘合薄膜303的外侧也形成有粘合薄膜303的粘接片300，但与粘接片200一样，也会出现卷成卷状时的卷痕问题。
与此相对，上述粘接片1中，如图2所示，芯片接合薄膜40的外周部分40a的至少一部分与粘接层30重叠，与外周部分40a对应的粘接片1的厚度厚于与中央部分40b对应的粘接片1的厚度。因此，将粘接片1卷成卷状时，受到芯片接合薄膜40与粘接层30的重叠部分的保护，芯片接合薄膜的中央部分40b受到的卷取时的张力得到缓和，可以抑制卷痕转印至芯片接合薄膜40。
此外，从抑制卷痕转印的观点来看，如图11所示的粘接片2，粘接层30的内周的至少一部分也可以与芯片接合薄膜40重叠。此时，与外周部分40a对应的粘接片2的厚度也厚于与中央部分40b对应的粘接片2的厚度。因此，与粘接片1相同，可以抑制卷痕转印至芯片接合薄膜40。
以下说明本发明涉及的粘接片的卷痕转印抑制性的评价试验。
（实施例1）
在弱粘接层与基材的层积品（切割胶带）的弱粘接层上，粘贴以70mm间隔连续切割为内径210mm的圆环状的上述（1）的强粘接层作为环形框架固定用粘接层。然后，连续粘贴加工为直径220mm圆形的芯片接合薄膜，使其与强粘接层成同心。之后，对于切割胶带与强粘接层的层积部分，一边调节切入基材的深度在10μm以下，一边预切加工为与芯片接合薄膜为同心圆状的的圆形，同时，在基材的宽度方向的两端部保留切割胶带与强粘接层的层积部分，得到半导体装置制造用粘接片。
（实施例2）
除了将芯片接合薄膜加工为直径211mm的圆形以外，与实施例1相同地得到半导体装置制造用粘接片。
（比较例1）
除了将芯片接合薄膜加工为直径205mm的圆形以外，与实施例1相同地得到半导体装置制造用粘接片。
（比较例2）
在弱粘接层与基材的层积品（切割胶带）的弱粘接层上，以60mm间隔连续粘贴加工为直径220mm圆形的芯片接合薄膜。然后，对于切割胶带与弱粘接层的层积部分，一边调节切入基材的深度在10μm以下，一边预切加工为与芯片接合薄膜为同心圆状的的圆形，同时，在基材的宽度方向的两端部保留切割胶带，得到半导体装置制造用粘接片。
（比较例3）
除了芯片接合薄膜的厚度为60μm以外，与比较例2相同地得到半导体装置制造用粘接片。
（粘接片卷轴的制作）
将实施例以及比较例涉及的粘接片以圆形的芯片接合薄膜100片的长度卷为卷状，得到粘接片卷轴。卷取张力为1kg或3kg。接着，将得到的粘接片卷轴在冰箱内（5℃）保存2周，然后，对于从冰箱取出的粘接片卷轴的第50片芯片接合薄膜，观察有无卷痕。评价基准如下。
○：任意角度观察均未看到卷痕
△：从薄膜上面观察未看到卷痕，但改变薄膜角度后观察确认有卷痕
×：从薄膜上面观察确认有卷痕
评价结果如表2所示。在芯片接合薄膜的外周与粘接层重叠的实施例1、2中，不论卷取张力如何，均未看到卷痕。另一方面，在芯片接合薄膜的外周与粘接层无重叠的比较例1~3中确认有卷痕，卷取张力较大时确认到有更显著的卷痕。此外，目视评价将实施例以及比较例涉及的粘接片与半导体晶圆粘贴时有无出现空隙。其结果是确认到空隙随着卷痕的发生情况而增加。
【表2】
Figure BDA00002536567200141

Claims (5)

1.一种粘接片，具备：基材、配置于所述基材上的第1粘接层、配置于所述第1粘接层上并且具有露出所述第1粘接层的开口的第2粘接层和配置于所述第1粘接层中的从所述开口露出的部分上的芯片接合薄膜，
所述芯片接合薄膜的外周的至少一部分与所述第2粘接层相接。
2.根据权利要求1所述的粘接片，其中，所述芯片接合薄膜的外周的至少一部分与所述第2粘接层重叠。
3.根据权利要求1所述的粘接片，其中，所述第2粘接层的内周的至少一部分与所述芯片接合薄膜重叠。
4.根据权利要求2或3所述的粘接片，其中，所述芯片接合薄膜与所述第2粘接层的重叠部分的宽度为0.1~25mm。
5.根据权利要求1~4任意一项所述的粘接片，其用于切割加工以及芯片接合加工。
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