CN102324455B - 用于p型氮化物发光装置的超薄欧姆接触及其形成方法 - Google Patents

用于p型氮化物发光装置的超薄欧姆接触及其形成方法 Download PDF

Info

Publication number
CN102324455B
CN102324455B CN201110276667.0A CN201110276667A CN102324455B CN 102324455 B CN102324455 B CN 102324455B CN 201110276667 A CN201110276667 A CN 201110276667A CN 102324455 B CN102324455 B CN 102324455B
Authority
CN
China
Prior art keywords
ohmic contact
metal
layer
less
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201110276667.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN102324455A (zh
Inventor
M·拉费托
J·巴拉坦
K·哈贝雷恩
M·伯格曼
D·埃默森
J·伊贝特森
T·李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kerui Led Co
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc filed Critical Cree Research Inc
Priority claimed from CNB2005800252798A external-priority patent/CN100557829C/zh
Publication of CN102324455A publication Critical patent/CN102324455A/zh
Application granted granted Critical
Publication of CN102324455B publication Critical patent/CN102324455B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
CN201110276667.0A 2004-07-27 2005-07-27 用于p型氮化物发光装置的超薄欧姆接触及其形成方法 Expired - Lifetime CN102324455B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US59135304P 2004-07-27 2004-07-27
US60/591353 2004-07-27
US63970504P 2004-12-28 2004-12-28
US60/639705 2004-12-28
CNB2005800252798A CN100557829C (zh) 2004-07-27 2005-07-27 用于p型氮化物发光装置的超薄欧姆接触及其形成方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800252798A Division CN100557829C (zh) 2004-07-27 2005-07-27 用于p型氮化物发光装置的超薄欧姆接触及其形成方法

Publications (2)

Publication Number Publication Date
CN102324455A CN102324455A (zh) 2012-01-18
CN102324455B true CN102324455B (zh) 2016-10-12

Family

ID=35787787

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110276667.0A Expired - Lifetime CN102324455B (zh) 2004-07-27 2005-07-27 用于p型氮化物发光装置的超薄欧姆接触及其形成方法
CN201110276702.9A Expired - Lifetime CN102324452B (zh) 2004-07-27 2005-07-27 用于p型氮化物发光装置的超薄欧姆接触及其形成方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201110276702.9A Expired - Lifetime CN102324452B (zh) 2004-07-27 2005-07-27 用于p型氮化物发光装置的超薄欧姆接触及其形成方法

Country Status (7)

Country Link
US (2) US8089090B2 (enExample)
EP (1) EP1771893B1 (enExample)
JP (4) JP5358092B2 (enExample)
KR (3) KR101289541B1 (enExample)
CN (2) CN102324455B (enExample)
TW (1) TWI374552B (enExample)
WO (1) WO2006014996A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
CN100388517C (zh) * 2004-07-08 2008-05-14 夏普株式会社 氮化物系化合物半导体发光元件及其制造方法
JP2006073619A (ja) * 2004-08-31 2006-03-16 Sharp Corp 窒化物系化合物半導体発光素子
JP4371956B2 (ja) * 2004-09-02 2009-11-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP4767035B2 (ja) * 2005-04-12 2011-09-07 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP4101823B2 (ja) * 2005-06-13 2008-06-18 株式会社東芝 半導体素子、電極形成方法及び半導体素子の製造方法
US7928451B2 (en) * 2006-08-18 2011-04-19 Sensor Electronic Technology, Inc. Shaped contact layer for light emitting heterostructure
JP2008091862A (ja) * 2006-09-08 2008-04-17 Sharp Corp 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2008117824A (ja) * 2006-11-01 2008-05-22 Sharp Corp 窒化物系半導体素子の製造方法
EP2087533A2 (en) * 2006-11-17 2009-08-12 3M Innovative Properties Company Planarized led with optical extractor
US20100051971A1 (en) * 2006-11-17 2010-03-04 Ouderkirk Andrew J High efficiency light emitting articles and methods of forming the same
JP2010510671A (ja) * 2006-11-17 2010-04-02 スリーエム イノベイティブ プロパティズ カンパニー Ｌｅｄ光源用の光学接着組成物
JP4561732B2 (ja) * 2006-11-20 2010-10-13 トヨタ自動車株式会社 移動体位置測位装置
CN101548398A (zh) * 2006-11-20 2009-09-30 3M创新有限公司 用于led光源的光学粘合组合物
US20110037092A1 (en) * 2008-06-06 2011-02-17 Atsuhiro Hori Light-emitting element
US20100327300A1 (en) 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
TW201312763A (zh) * 2011-09-09 2013-03-16 鴻海精密工業股份有限公司 晶片封裝件
KR101908656B1 (ko) * 2012-04-09 2018-10-16 엘지이노텍 주식회사 발광 소자 패키지
WO2014151264A1 (en) 2013-03-15 2014-09-25 Crystal Is, Inc. Planar contacts to pseudomorphic electronic and optoelectronic devices
JP2014183090A (ja) * 2013-03-18 2014-09-29 Oki Electric Ind Co Ltd 透明電極構造、窒化物半導体発光ダイオード、及び透明電極成膜方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1368764A (zh) * 2001-01-31 2002-09-11 广镓光电股份有限公司 一种高亮度蓝光发光晶粒的结构
US6521999B1 (en) * 1999-06-28 2003-02-18 Toyoda Gosei Co. Ltd. Transparent electrode film and group III nitride semiconductor device
CN1540774A (zh) * 2003-04-21 2004-10-27 ���ǵ�����ʽ���� 半导体发光二极管及其制造方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02124406A (ja) * 1988-11-01 1990-05-11 Mitsubishi Electric Corp 半導体製造装置
US5027168A (en) * 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) * 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
JP2987998B2 (ja) * 1991-05-21 1999-12-06 日本電気株式会社 減圧ｃｖｄ装置
JPH0580203A (ja) 1991-09-19 1993-04-02 Hitachi Ltd プラスチツク製光学部品のハードコート膜
JP3404765B2 (ja) 1992-05-27 2003-05-12 岩崎電気株式会社 傾斜機能膜付メタルハライドランプ及びその照明器具
JPH06268253A (ja) 1993-03-10 1994-09-22 Hitachi Cable Ltd 電極付エピタキシャルウェハの製造方法および電極付エピタキシャルウェハの評価方法
EP0952617B1 (en) 1993-04-28 2004-07-28 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5604135A (en) * 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JPH08335717A (ja) 1995-06-06 1996-12-17 Rohm Co Ltd 半導体発光素子
JP3804698B2 (ja) 1996-02-16 2006-08-02 三井化学株式会社 積層体及びその製造方法
CN1147009C (zh) * 1997-03-19 2004-04-21 夏普株式会社 半导体发光元件
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3736181B2 (ja) 1998-05-13 2006-01-18 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2004363621A (ja) 1998-05-13 2004-12-24 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2000252230A (ja) * 1998-12-28 2000-09-14 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2000244010A (ja) 1999-02-19 2000-09-08 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
JP2001196631A (ja) * 1999-10-29 2001-07-19 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体素子とその製造方法
JP2001339101A (ja) * 2000-05-26 2001-12-07 Sharp Corp 窒化ガリウム系化合物半導体素子
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
JP4024994B2 (ja) * 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
JP2002170988A (ja) 2000-12-01 2002-06-14 Sharp Corp 窒化物半導体発光素子とその発光装置
KR100391373B1 (ko) * 2000-10-13 2003-07-16 광주과학기술원 반사막이 삽입된 ｐ형 전극구조를 가지는 질화물계 발광다이오드 및 그 제조방법
JP3639789B2 (ja) 2001-01-31 2005-04-20 シャープ株式会社 窒化物系半導体発光素子
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US20020117672A1 (en) * 2001-02-23 2002-08-29 Ming-Sung Chu High-brightness blue-light emitting crystalline structure
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP2002359396A (ja) 2001-06-01 2002-12-13 Stanley Electric Co Ltd 半導体発光装置
US6664560B2 (en) * 2001-06-15 2003-12-16 Cree, Inc. Ultraviolet light emitting diode
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
JP3998445B2 (ja) * 2001-08-31 2007-10-24 株式会社東芝 半導体装置の製造方法、半導体装置の製造装置、半導体装置の製造システム、および半導体製造装置のクリーニング方法
JP4046582B2 (ja) 2001-09-17 2008-02-13 三洋電機株式会社 窒化物系半導体発光素子およびその形成方法
TW549767U (en) * 2001-12-28 2003-08-21 Veutron Corp L-type reflection mirror set
JP2004003732A (ja) 2002-05-31 2004-01-08 Mitsubishi Electric Building Techno Service Co Ltd 冷凍・空調装置の遠隔監視システム及び遠隔監視方法
JP2004063732A (ja) 2002-07-29 2004-02-26 Matsushita Electric Ind Co Ltd 発光素子
JP2005117020A (ja) * 2003-09-16 2005-04-28 Stanley Electric Co Ltd 窒化ガリウム系化合物半導体素子とその製造方法
US7960746B2 (en) 2004-01-06 2011-06-14 Samsung Led Co., Ltd. Low resistance electrode and compound semiconductor light emitting device including the same
JP2005244207A (ja) * 2004-01-30 2005-09-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
US7061026B2 (en) * 2004-04-16 2006-06-13 Arima Optoelectronics Corp. High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer
EP1761960A4 (en) * 2004-06-24 2010-07-21 Showa Denko Kk REFLECTIVE POSITIVE ELECTRODE AND THIS USING LIGHT EMITTING SEMICONDUCTOR DEVICE FROM A GALLIUM NITRIDE COMPOUND
CN100557829C (zh) 2004-07-27 2009-11-04 克里公司 用于p型氮化物发光装置的超薄欧姆接触及其形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521999B1 (en) * 1999-06-28 2003-02-18 Toyoda Gosei Co. Ltd. Transparent electrode film and group III nitride semiconductor device
CN1368764A (zh) * 2001-01-31 2002-09-11 广镓光电股份有限公司 一种高亮度蓝光发光晶粒的结构
CN1540774A (zh) * 2003-04-21 2004-10-27 ���ǵ�����ʽ���� 半导体发光二极管及其制造方法

Also Published As

Publication number Publication date
JP2012069959A (ja) 2012-04-05
US8759868B2 (en) 2014-06-24
EP1771893B1 (en) 2015-03-18
KR101335168B1 (ko) 2013-11-29
JP5358092B2 (ja) 2013-12-04
JP2008508726A (ja) 2008-03-21
TWI374552B (en) 2012-10-11
EP1771893A2 (en) 2007-04-11
KR20120016172A (ko) 2012-02-22
CN102324452B (zh) 2015-11-25
KR101289541B1 (ko) 2013-07-24
KR20070042976A (ko) 2007-04-24
WO2006014996A3 (en) 2006-05-11
CN102324452A (zh) 2012-01-18
US20120080688A1 (en) 2012-04-05
US8089090B2 (en) 2012-01-03
JP6258820B2 (ja) 2018-01-10
US20060046328A1 (en) 2006-03-02
TW200629594A (en) 2006-08-16
WO2006014996A2 (en) 2006-02-09
JP5816047B2 (ja) 2015-11-17
JP2012054579A (ja) 2012-03-15
CN102324455A (zh) 2012-01-18
KR20120034796A (ko) 2012-04-12
KR101335760B1 (ko) 2013-12-05
JP2014241442A (ja) 2014-12-25

Similar Documents

Publication Publication Date Title
JP5816047B2 (ja) Ｐ型窒化物発光デバイス用の極薄オーミックコンタクトおよび形成方法
US7557379B2 (en) Light emitting devices having a roughened reflective bond pad and methods of fabricating light emitting devices having roughened reflective bond pads
US7687376B2 (en) Method of manufacturing vertical gallium nitride-based light emitting diode
KR20100044256A (ko) 마이크로―픽셀 자외선 발광 다이오드
WO2006118623A1 (en) Light emitting devices with active layers that extend into opened pits
US20180090645A1 (en) Reflective structure for light emitting devices
US8415702B2 (en) Reflector, manufacture method thereof and light-emitting device including the reflector
CN101002338A (zh) 用于p型氮化物发光装置的超薄欧姆接触及其形成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20211203

Address after: California, USA

Patentee after: Kerui led Co.

Address before: North Carolina

Patentee before: CREE, Inc.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20161012