CN102298274A - 曝光方法及装置、维护方法、以及组件制造方法 - Google Patents

曝光方法及装置、维护方法、以及组件制造方法 Download PDF

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Publication number
CN102298274A
CN102298274A CN2011102517818A CN201110251781A CN102298274A CN 102298274 A CN102298274 A CN 102298274A CN 2011102517818 A CN2011102517818 A CN 2011102517818A CN 201110251781 A CN201110251781 A CN 201110251781A CN 102298274 A CN102298274 A CN 102298274A
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China
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mentioned
liquid
substrate
microscope carrier
exposure
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CN2011102517818A
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Chinese (zh)
Inventor
中野胜志
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN2011102517818A 2006-05-18 2007-05-18 曝光方法及装置、维护方法、以及组件制造方法 Pending CN102298274A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2006139614 2006-05-18
JP2006-139614 2006-05-18
JP2006140957 2006-05-19
JP2006-140957 2006-05-19
JP2007-103343 2007-04-10
JP2007103343 2007-04-10

Related Parent Applications (1)

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CN200780011033.4A Division CN101410948B (zh) 2006-05-18 2007-05-18 曝光方法及装置、维护方法、以及组件制造方法

Publications (1)

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CN102298274A true CN102298274A (zh) 2011-12-28

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CN2011102517818A Pending CN102298274A (zh) 2006-05-18 2007-05-18 曝光方法及装置、维护方法、以及组件制造方法
CN200780011033.4A Expired - Fee Related CN101410948B (zh) 2006-05-18 2007-05-18 曝光方法及装置、维护方法、以及组件制造方法

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Country Link
US (2) US8514366B2 (enExample)
EP (1) EP2037486A4 (enExample)
JP (2) JP5217239B2 (enExample)
KR (1) KR20090018024A (enExample)
CN (2) CN102298274A (enExample)
SG (1) SG175671A1 (enExample)
TW (1) TW200805000A (enExample)
WO (1) WO2007135990A1 (enExample)

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TWI503553B (zh) * 2011-10-19 2015-10-11 Johnstech Int Corp 用於微電路測試器的導電開爾文接觸件
KR102071873B1 (ko) * 2012-12-27 2020-02-03 삼성디스플레이 주식회사 용매 제거장치 및 이를 포함하는 포토리소그래피 장치
KR101573450B1 (ko) * 2014-07-17 2015-12-11 주식회사 아이에스시 테스트용 소켓
JP6456476B2 (ja) 2014-08-07 2019-01-23 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及びデバイスを製造する方法
KR102215539B1 (ko) 2015-11-20 2021-02-16 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 작동시키는 방법
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CN101410948B (zh) 2011-10-26
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JP2008283156A (ja) 2008-11-20
CN101410948A (zh) 2009-04-15
EP2037486A1 (en) 2009-03-18
US20130301019A1 (en) 2013-11-14
EP2037486A4 (en) 2012-01-11
JP5217239B2 (ja) 2013-06-19
US20090066922A1 (en) 2009-03-12
SG175671A1 (en) 2011-11-28
TW200805000A (en) 2008-01-16
US8514366B2 (en) 2013-08-20
JP2012164992A (ja) 2012-08-30

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