JP6456476B2 - リソグラフィ装置及びデバイスを製造する方法 - Google Patents
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
- G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
- G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
[0001] 本出願は、2014年8月7日に出願された米国仮出願第62/034,644号、及び2015年4月13日に出願された米国仮出願第62/146,762号の優先権を主張する。これらの出願は引用によりその全体が本願に含まれるものとする。
・エントリ運動中に発生する可能性のある泡を液浸液中に溶解できるように、移送時間を選択することができる。
・エントリ運動中に発生する可能性のある泡を液浸空間の液浸液の循環によって除去できるように、移送時間を選択することができる。
・メニスカスが基板エッジに対して平行でないのでエントリ運動中の泡の発生が低減されないように、エントリ運動を行う位置を移送運動によって選択することができる。
Claims (14)
- 複数のターゲット部分を有する基板を支持するように構成された基板テーブルと、
前記基板にパターン付ビームを投影するように構成された投影システムと、
前記投影システムに対して前記基板テーブルを移動させるように構成されたポジショナと、
前記投影システムと前記基板及び/又は前記基板テーブルの表面との間の液浸空間に液体を閉じ込めるように構成された液体閉じ込め構造と、
露光ルートに追従するように前記基板テーブルを移動させるため前記ポジショナを制御するよう構成されたコントローラであって、前記露光ルートが、
前記液浸空間が前記基板と重複しないオフ基板位置から前記液浸空間が少なくとも部分的に前記基板と重複するオン基板位置まで前記基板テーブルが移動するエントリ運動と、
前記基板が前記オン基板位置に移動した後、前記基板テーブルが、速度及び/又は方向を変え、少なくともある一定の移送時間だけ移動する移送運動と、
前記基板がスキャンされ、前記パターン付ビームが前記基板に投影される露光運動と、
を順番に備える、コントローラと、を備え、
前記エントリ運動及び前記移送運動の間は前記パターン付ビームが前記基板に投影されず、
前記移送運動全体を通して前記液浸空間の少なくとも一部が前記基板と重複する、液浸リソグラフィ装置。 - 前記エントリ運動が行われる前記基板上の位置は、前記位置における前記基板のエッジの接線が前記液浸空間の前縁に対して鋭角であるように選択される、請求項1に記載の装置。
- 前記エントリ運動が行われる前記基板上の位置は、前記基板の前記エッジの前記接線と前記液浸空間の前記前縁との間の角度が20度から70度の範囲内にあるように選択される、請求項2に記載の装置。
- 前記移送運動が前記基板テーブルの移動方向の変化を含む、請求項1から3のいずれかに記載の装置。
- 前記移送運動がS字運動を含む、請求項4に記載の装置。
- 前記移送時間が少なくとも50msである、請求項1から3のいずれかに記載の装置。
- 前記露光ルートが、前記基板の全てのターゲット部分を露光するように配置された複数の露光運動を含み、前記露光ルートが、前記露光ルート全体を通して、前記エントリ運動の後に前記液浸空間の少なくとも一部が前記基板と重複するように配置されている、請求項1から3のいずれかに記載の装置。
- 液浸リソグラフィ装置を用いて、複数のターゲット部分を有する基板にパターン付ビームを投影する、デバイス製造方法であって、
投影システムと対向面との間の液浸空間に液体を閉じ込めることと、
前記基板を保持する基板テーブルを露光ルートに沿って移動させることであって、前記露光ルートが、
前記液浸空間が前記基板と重複しないオフ基板位置から前記液浸空間が少なくとも部分的に前記基板と重複するオン基板位置まで前記基板が移動するエントリ運動と、
前記基板が前記オン基板位置に移動した後、前記基板テーブルが、速度及び/又は方向を変え、少なくともある一定の移送時間だけ移動する移送運動と、
前記基板がスキャンされ、前記投影ビームが前記基板に投影される露光運動と、
を順番に備える、基板テーブルを移動させることと、を備え、
前記エントリ運動及び前記移送運動の間は前記パターン付ビームが前記基板に投影されず、
前記移送運動全体を通して前記液浸空間の少なくとも一部が前記基板と重複する、方法。 - 前記エントリ運動が行われる前記基板上の位置は、前記位置における前記基板のエッジの接線が前記液浸空間の前縁に対して鋭角であるように選択される、請求項8に記載の方法。
- 前記エントリ運動が行われる前記基板上の位置は、前記基板の前記接線エッジと前記液浸空間の前記前縁との間の角度が20度から70度の範囲内にあるように選択される、請求項9に記載の方法。
- 前記移送運動が前記基板テーブルの移動方向の変化を含む、請求項8から10のいずれかに記載の方法。
- 前記移送運動がS字運動を含む、請求項11に記載の方法。
- 前記移送時間が少なくとも50msである、請求項8から12のいずれかに記載の方法。
- 前記露光ルートが、前記基板の全てのターゲット部分を露光するように配置された複数の露光運動を含み、前記露光ルートが、前記露光ルート全体を通して、前記エントリ運動の後に前記液浸空間の少なくとも一部が前記基板と重複するように配置されている、請求項8から10のいずれかに記載の方法。
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US201462034644P | 2014-08-07 | 2014-08-07 | |
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US201562146762P | 2015-04-13 | 2015-04-13 | |
US62/146,762 | 2015-04-13 | ||
PCT/EP2015/064793 WO2016020121A1 (en) | 2014-08-07 | 2015-06-30 | Lithography apparatus and method of manufacturing a device |
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CN109716238B (zh) * | 2016-09-20 | 2020-12-25 | Asml荷兰有限公司 | 光刻设备和制造器件的方法 |
CN110088686B (zh) * | 2016-12-14 | 2021-11-16 | Asml荷兰有限公司 | 光刻设备及器件制造方法 |
CN113811817A (zh) * | 2019-04-17 | 2021-12-17 | Asml荷兰有限公司 | 器件制造方法和计算机程序 |
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