CN102290623A - High-power 100W-20dB attenuator with aluminium nitride ceramic substrate - Google Patents
High-power 100W-20dB attenuator with aluminium nitride ceramic substrate Download PDFInfo
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- CN102290623A CN102290623A CN2011101381100A CN201110138110A CN102290623A CN 102290623 A CN102290623 A CN 102290623A CN 2011101381100 A CN2011101381100 A CN 2011101381100A CN 201110138110 A CN201110138110 A CN 201110138110A CN 102290623 A CN102290623 A CN 102290623A
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Abstract
The invention discloses a high-power 100W-20dB attenuator with an aluminium nitride ceramic substrate, which comprises the aluminium nitride substrate, wherein a conductor layer is printed at the reverse side of the aluminium nitride substrate; a plurality of resistors and silver paste wires are printed at the front side of the aluminium nitride substrate; the silver paste wires are connected with the resistors to form an attenuator circuit; and glass protective films are printed on the resistors. In the high-power 100W-20dB attenuator with the aluminium nitride ceramic substrate, the areas of the resistors are increased, so that the high and low temperature impact resistance of the attenuator is improved and the performance index of a product meets the requirements. Meanwhile, the resistors are avoided being damaged by quenching due to the high temperature in the process of welding lead wires at an output end, the risk that the attenuator is broken down due to the quenching damage of the resistors in the actual using process is avoided, and the circuit design is improved, so that the product can be applied to a 3G (the 3rd generation) network.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, particularly a kind of high-power aluminium nitride ceramics substrate 100W-20dB attenuator.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; high-power ceramic carrier sheet can only merely consume and absorb unnecessary power; and can't do real-time monitoring to the working condition of base station; work can't judge when breaking down in time when the base station, and equipment is not had protective effect.
Attenuator not only can absorb the power of oppositely importing in the communication component in communication base station; and can extract part signal in the communication component; the base station is monitored in real time; equipment there is protective effect; but the aluminium nitride ceramics attenuator of present domestic 100W-20dB; its attenuation accuracy not only can only be accomplished in the 1G frequency mostly; minority can be accomplished 2G; and the difficult control of the VSWR of attenuation accuracy and equipment configuration; market is that precision is higher to the requirement of attenuation accuracy; when attenuation accuracy does not reach when requiring or VSWR does not reach when requiring, the signal that output obtains does not meet actual requirement.When frequency range is higher than 2G, domestic attenuator, its attenuation accuracy more will not satisfy requirement.
The attenuator that we wish is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and does not satisfy the above frequency range application requirements of 2G.Appearance the problems referred to above mainly are the design reasons because of domestic 100W-20dB attenuator, and the anti-high and low-temp impact property is poor.After finishing high/low-temperature impact experiment, the scope that domestic present attenuator impedance and attenuation accuracy have deflected away from actual requirement, the attenuation accuracy that so just makes does not satisfy requirement.
Summary of the invention
At above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention provides a kind of attenuation accuracy height, can use high-power aluminium nitride ceramics substrate 100W-20dB attenuator in the 3G frequency range.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high-power aluminium nitride ceramics substrate 100W-20dB attenuator; it comprises an aluminium nitride substrate; the back up of described aluminium nitride substrate has conductor layer; the front of described aluminium nitride substrate is printed with several resistance and silver slurry lead; described silver slurry lead connects described resistance and forms attenuator circuit, is printed with glass protection film on the described resistance.
Preferably, the upper surface of described silver slurry lead and glass protection film also is printed with one deck black protective film.
Preferably, described conductor layer is formed by the printing of printed silver slurry.
Preferably, described attenuator circuit adopts TT type circuit structure.
Preferably, described silver slurry lead is connected by the low-temperature silver slurry with described conductor layer.
Preferably, described silver slurry is the low-temperature silver slurry.
Technique scheme has following beneficial effect: this high-power aluminium nitride ceramics substrate 100W-20dB attenuator has increased resistor area, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously, avoided being quenched and hindered the risk that can break down in actual use, improved the design of circuit, made product can be applied to 3G network because of resistance.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Description of drawings
Fig. 1 is the structural representation in embodiment of the invention front.
Fig. 2 is the structural representation at the embodiment of the invention back side.
Fig. 3 is the positive structural representation that is connected with the back side of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, 2, this high-power aluminium nitride ceramics substrate 100W-20dB attenuator comprises an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer 5, and conductor layer is formed by the printing of printed silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R 1, R2, R3, R4, R5 and silver slurry lead 2; silver slurry lead 2 couples together the attenuator circuit that forms a TT type structure with resistance R 1, R2, R3, R4, R5; all be printed with glass protection film 3 on resistance R 1, R2, R3, R4, the R5, glass protection film 3 is used for protective resistance R1, R2, R3, R4, R5.Upper surface at promptly silver-colored slurry lead 2 of entire circuit and glass protection film 3 also is printed with one deck black protective film 4, and black protective film 4 can comprise entire circuit, also can print brand and model on the black protective film 4.As shown in Figure 3, silver slurry lead 2 is connected by low-temperature silver slurry 6 with conductor layer 5, and entire circuit gets final product conducting like this.
It is 50 ± 1.5 Ω that this high-power aluminium nitride ceramics substrate 100W-20dB attenuator requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal enters attenuator from input, through resistance R 1, and R2, R5, R3, R4 make output export actual needed signal to the progressively absorption of power.
This high-power aluminium nitride ceramics substrate 100W-20dB attenuator has increased R3, R4 area, and makes resistance R 3, R4 and output vacate a segment distance, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously, avoided being quenched and hindered the risk that can break down in actual use, improved the design of circuit, made product can be applied to 3G network because of resistance.
More than a kind of high-power aluminium nitride ceramics substrate 100W-20dB attenuator that the embodiment of the invention provided is described in detail; for one of ordinary skill in the art; thought according to the embodiment of the invention; part in specific embodiments and applications all can change; in sum; this description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (6)
1. high-power aluminium nitride ceramics substrate 100W-20dB attenuator; it is characterized in that: it comprises an aluminium nitride substrate; the back up of described aluminium nitride substrate has conductor layer; the front of described aluminium nitride substrate is printed with several resistance and silver slurry lead; described silver slurry lead connects described resistance and forms attenuator circuit, is printed with glass protection film on the described resistance.
2. high-power aluminium nitride ceramics substrate 100W-20dB attenuator according to claim 1 is characterized in that: the upper surface of described silver slurry lead and glass protection film also is printed with one deck black protective film.
3. high-power aluminium nitride ceramics substrate 100W-20dB attenuator according to claim 1 is characterized in that: described conductor layer is formed by the printing of printed silver slurry.
4. high-power aluminium nitride ceramics substrate 100W-20dB attenuator according to claim 1 is characterized in that: described attenuator circuit adopts TT type circuit structure.
5. high-power aluminium nitride ceramics substrate 100W-20dB attenuator according to claim 1 is characterized in that: described silver slurry lead is connected by the silver slurry with described conductor layer.
6. high-power aluminium nitride ceramics substrate 100W-20dB attenuator according to claim 5 is characterized in that: described silver slurry is the low-temperature silver slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101381100A CN102290623A (en) | 2011-05-26 | 2011-05-26 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101381100A CN102290623A (en) | 2011-05-26 | 2011-05-26 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
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| CN102290623A true CN102290623A (en) | 2011-12-21 |
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| CN2011101381100A Pending CN102290623A (en) | 2011-05-26 | 2011-05-26 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218289A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | 4dB attenuator with 100w power capacity |
| CN104218285A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment |
| CN104218294A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Efficient 2w 5dB attenuator with aluminum oxide ceramic substrate |
| CN104218291A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Low-expansion-factor aluminum-nitride 10W-28dB attenuation piece |
| CN104218292A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | 2dB attenuator with 100w power capacity |
| CN104218288A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Efficient stable 100w 5dB attenuator with aluminum oxide ceramic substrate |
| CN104241771A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power 100-watt 11dB attenuation plate with aluminum nitride ceramic substrate |
| CN104241789A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 1 dB attenuation piece with power capacity being 100 W |
| CN104241786A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Small-size high-stability 10 W 25 dB aluminum nitride ceramic attenuation slice |
| CN104241770A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 8 dB attenuation piece with power capacity being 100 W |
| CN104241756A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-attenuation-value 10 W-2 dB attenuation slice |
| CN104241763A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN101075490A (en) * | 2007-05-01 | 2007-11-21 | 北海银河开关设备有限公司 | 12kV fixed-sealed resistant voltage divider |
| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN101916900A (en) * | 2010-07-30 | 2010-12-15 | 合肥佰特微波技术有限公司 | Pellet resistor with multi-cascade attenuator circuit |
| CN202121042U (en) * | 2011-05-26 | 2012-01-18 | 苏州市新诚氏电子有限公司 | High-power aluminium nitride ceramic substrate 100W-20dB attenuator |
-
2011
- 2011-05-26 CN CN2011101381100A patent/CN102290623A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN101075490A (en) * | 2007-05-01 | 2007-11-21 | 北海银河开关设备有限公司 | 12kV fixed-sealed resistant voltage divider |
| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN101916900A (en) * | 2010-07-30 | 2010-12-15 | 合肥佰特微波技术有限公司 | Pellet resistor with multi-cascade attenuator circuit |
| CN202121042U (en) * | 2011-05-26 | 2012-01-18 | 苏州市新诚氏电子有限公司 | High-power aluminium nitride ceramic substrate 100W-20dB attenuator |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218285A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment |
| CN104218288A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Efficient stable 100w 5dB attenuator with aluminum oxide ceramic substrate |
| CN104241756A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-attenuation-value 10 W-2 dB attenuation slice |
| CN104241763A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice |
| CN104218289A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | 4dB attenuator with 100w power capacity |
| CN104218294A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Efficient 2w 5dB attenuator with aluminum oxide ceramic substrate |
| CN104218291A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Low-expansion-factor aluminum-nitride 10W-28dB attenuation piece |
| CN104218292A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | 2dB attenuator with 100w power capacity |
| CN104241771A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power 100-watt 11dB attenuation plate with aluminum nitride ceramic substrate |
| CN104241789A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 1 dB attenuation piece with power capacity being 100 W |
| CN104241786A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Small-size high-stability 10 W 25 dB aluminum nitride ceramic attenuation slice |
| CN104241770A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 8 dB attenuation piece with power capacity being 100 W |
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Application publication date: 20111221 |