CN202121045U - Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet - Google Patents
Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet Download PDFInfo
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- CN202121045U CN202121045U CN 201120259866 CN201120259866U CN202121045U CN 202121045 U CN202121045 U CN 202121045U CN 201120259866 CN201120259866 CN 201120259866 CN 201120259866 U CN201120259866 U CN 201120259866U CN 202121045 U CN202121045 U CN 202121045U
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- aluminium nitride
- nitride substrate
- attenuation
- attenuation sheet
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Abstract
The utility model discloses a large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet, comprising a 5*5*1mm aluminium nitride substrate, wherein the back side of the aluminium nitride substrate is printed with a back guiding layer, the front side of the aluminium nitride substrate is printed with a lead and a resistor, the lead is connected with the resistor to form an attenuation circuit, the attenuation circuit is symmetric along the center line of the aluminium nitride substrate, an output end and an input end of the attenuation circuit are respectively connected with a bonding pad, and the two bonding pads are symmetric along the center line of the aluminium nitride substrate. An increased resistance area of the attenuation sheet improves high and low temperature impact resisting performance, avoids that damage is caused to the resistor due to high temperature when a lead is welded at the output end, and also avoids that the attenuation sheet can be broken in real usage because of the damage of the resistor, enables that performance of the attenuation sheet is substantially improved, solves the problem that the attenuation sheet can only be used in low frequency situations, and guarantees that the attenuation sheet can be applied to 2G-3G networks.
Description
Technical field
The utility model relates to a kind of aluminium nitride ceramics attenuator, the attenuator of 20 watts of 20dB of particularly a kind of high-power aluminium nitride ceramics substrate.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time, and equipment is had protective effect.
The attenuation accuracy of the aluminium nitride ceramics attenuator of present domestic 20W-20dB can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
At present domestic 20W-20dB attenuator is because of the reason of design, and attenuation accuracy does not reach requirement, and the anti-high and low-temp impact property is poor, and after accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy can deflect away from the scope of actual requirement.
The utility model content
Deficiency to above-mentioned prior art; The technical problem that the utility model will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 20 ± 1dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires input in 1.2, and output can satisfy 20 watts of 20dB attenuators of high-power aluminium nitride ceramics substrate of the application requirements of present 3G network in 1.25.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
20 watts of 20dB attenuators of a kind of high-power aluminium nitride ceramics substrate; It comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
Preferably, be printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Technique scheme has following beneficial effect: 20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate are in a state of symmetry fully by attenuator circuit; Make the stability of circuit get a promotion; The client does not need painstakingly differentiation input and output in use simultaneously; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
Above-mentioned explanation only is the general introduction of the utility model technical scheme, in order more to know the technological means of understanding the utility model, and can implement according to the content of specification, below with the preferred embodiment of the utility model and conjunction with figs. specify as after.The embodiment of the utility model is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Describe in detail below in conjunction with the preferred embodiment of accompanying drawing to the utility model.
As shown in Figure 1; 20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output, and the signal that output obtains is approximately one of percentage of input signal.
20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate with the aluminium nitride substrate of 5*5*1MM as substrate; Let attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, and two pads 5,6 all can be used as input or output; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
More than 20 watts of 20dB attenuators of a kind of high-power aluminium nitride ceramics substrate that the utility model embodiment is provided carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the utility model embodiment, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as the restriction to the utility model, and all any changes of being made according to the utility model design philosophy are all within the protection range of the utility model.
Claims (3)
1. 20 watts of 20dB attenuators of a high-power aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
2. 20 watts of 20dB attenuators of high-power aluminium nitride ceramics substrate according to claim 1 is characterized in that: be printed with glass protection film on the said resistance.
3. 20 watts of 20dB attenuators of high-power aluminium nitride ceramics substrate according to claim 2, it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120259866 CN202121045U (en) | 2011-07-22 | 2011-07-22 | Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120259866 CN202121045U (en) | 2011-07-22 | 2011-07-22 | Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202121045U true CN202121045U (en) | 2012-01-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120259866 Expired - Fee Related CN202121045U (en) | 2011-07-22 | 2011-07-22 | Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet |
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| CN (1) | CN202121045U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332627A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate |
-
2011
- 2011-07-22 CN CN 201120259866 patent/CN202121045U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332627A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120118 Termination date: 20120722 |