CN202259630U - Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator - Google Patents
Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator Download PDFInfo
- Publication number
- CN202259630U CN202259630U CN 201120335487 CN201120335487U CN202259630U CN 202259630 U CN202259630 U CN 202259630U CN 201120335487 CN201120335487 CN 201120335487 CN 201120335487 U CN201120335487 U CN 201120335487U CN 202259630 U CN202259630 U CN 202259630U
- Authority
- CN
- China
- Prior art keywords
- aluminium nitride
- attenuator
- ceramic substrate
- nitride ceramic
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses an aluminium nitride ceramic substrate based 20 watt 30 dB attenuator, comprising a 5mm*5mm*1mm aluminium nitride ceramic substrate, wherein the back side of the aluminium nitride ceramic substrate is provided with a printed backside conductive layer, the front side of the aluminium nitride ceramic substrate is provided with printed wires and resistors, the wires are connected with the resistors to form an attenuation circuit, the attenuation circuit is symmetrical along the central axis of the aluminium nitride ceramic substrate, the output and input ends of the attenuation circuit are respectively connected with a pad, and the two pads are symmetrical along the central axis of the aluminium nitride ceramic substrate. The attenuator enables the resistor area to be increased and the high and low temperature impact resistance to be increased, prevents the resistors from being damaged by high temperature in the process of lead welding at the output end, thereby avoiding the risk that the resistors are broken in the process of practical application due to that the resistors are damaged, and improving attenuator performance; and the situation that the prior attenuator can only be applied to lower frequency is changed and the aluminium nitride ceramic substrate based 20 watt 30 dB attenuator can be applied to 2G and 3G networks.
Description
Technical field
The utility model relates to a kind of aluminium nitride ceramics attenuator, 20 watts of 3dB attenuators of particularly a kind of aluminium nitride ceramics substrate.
Background technology
Attenuator is to require to decay to certain ratio multiple (referring generally to power attenuation) to big voltage signal according to reality; Reach safe or desirable level value; Make things convenient for test job; Especially the extensive present most of communication base stations of utilization all are that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component in radio frequency and microwave, and high-power ceramic carrier sheet can only merely consume the power of absorbing redundant, and can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time, and equipment is had protective effect.Attenuator is a kind of energy consumption element, becomes heat after the power consumption.Can imagine that after material structure was confirmed, the power capacity of attenuator had just been confirmed; If the power that lets attenuator bear surpasses the limiting value of design, attenuator will be burnt, so the design of material chosen and line construction; And the size of size, production technology is very big to the influence of power, market to environmental protection and compact in size require increasingly high; The beryllium oxide of use does not before meet environmental protection requirement as baseplate material.
The attenuation accuracy of the aluminium nitride ceramics attenuator of present domestic 20W-3dB can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
At present domestic 20W-3dB attenuator is because of the reason of design, and attenuation accuracy does not reach requirement, and the anti-high and low-temp impact property is poor, and after accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy can deflect away from the scope of actual requirement.
The utility model content
Deficiency to above-mentioned prior art; The technical problem that the utility model will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 3 ± 0.5dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires to satisfy the market actual demand, can satisfy 20 watts of 3dB attenuators of aluminium nitride ceramics substrate of the application requirements of present 3G network.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
20 watts of 3dB attenuators of a kind of aluminium nitride ceramics substrate, it comprises the aluminium nitride substrate of a 5*5*1MM, the back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance; Said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate, and the output of said attenuator circuit, input are connected with a pad respectively; Said two pads are symmetrical along the center line of said aluminium nitride substrate.This product is based on advanced person's thick-film technique production.
Preferably, be printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Technique scheme has following beneficial effect: 20 watts of 3dB attenuators of this aluminium nitride ceramics substrate are in a state of symmetry fully by attenuator circuit; Make the stability of circuit get a promotion; The client does not need painstakingly differentiation input and output in use simultaneously; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
Above-mentioned explanation only is the general introduction of the utility model technical scheme, in order more to know the technological means of understanding the utility model, and can implement according to the content of specification, below with the preferred embodiment of the utility model and conjunction with figs. specify as after.The embodiment of the utility model is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Describe in detail below in conjunction with the preferred embodiment of accompanying drawing to the utility model.
As shown in Figure 1; 20 watts of 3dB attenuators of this aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.All technologies are based on advanced person's thick-film technique production.
It is 50 ± 1.5 Ω that 20 watts of 3dB attenuators of this aluminium nitride ceramics substrate require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output.
20 watts of 3dB attenuators of this aluminium nitride ceramics substrate with the aluminium nitride substrate of 5*5*1MM as substrate; Let attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, and two pads 5,6 all can be used as input or output; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
More than 20 watts of 3dB attenuators of a kind of aluminium nitride ceramics substrate that the utility model embodiment is provided carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the utility model embodiment, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as the restriction to the utility model, and all any changes of being made according to the utility model design philosophy are all within the protection range of the utility model.
Claims (5)
1. 20 watts of 3dB attenuators of an aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
2. 20 watts of 3dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: be printed with glass protection film on the said resistance.
3. 20 watts of 3dB attenuators of aluminium nitride ceramics substrate according to claim 1, it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
4. 20 watts of 3dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said attenuator circuit adopts TT type circuit structure.
5. 20 watts of 3dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said silver slurry lead is connected through ground connection silver slurry with said conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120335487 CN202259630U (en) | 2011-09-08 | 2011-09-08 | Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120335487 CN202259630U (en) | 2011-09-08 | 2011-09-08 | Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202259630U true CN202259630U (en) | 2012-05-30 |
Family
ID=46120823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120335487 Expired - Fee Related CN202259630U (en) | 2011-09-08 | 2011-09-08 | Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202259630U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361123A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W3dB attenuating piece of aluminium nitride ceramic substrate |
| CN102709635A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30-watt 14dB attenuation sheet of aluminum nitride ceramic substrate |
| CN102709640A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 30W 27dB attenuation sheet |
-
2011
- 2011-09-08 CN CN 201120335487 patent/CN202259630U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361123A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W3dB attenuating piece of aluminium nitride ceramic substrate |
| CN102709635A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30-watt 14dB attenuation sheet of aluminum nitride ceramic substrate |
| CN102709640A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 30W 27dB attenuation sheet |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102361123A (en) | 20W3dB attenuating piece of aluminium nitride ceramic substrate | |
| CN102361125A (en) | 20W1dB attenuating piece of aluminium nitride ceramic substrate | |
| CN202121044U (en) | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice | |
| CN202259630U (en) | Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator | |
| CN102361124A (en) | 30W3dB attenuating piece of aluminium nitride ceramic substrate | |
| CN202259631U (en) | 30Watt and 10dB attenuating plate of aluminum nitride ceramic substrate | |
| CN102361133A (en) | 20W and 2dB attenuator with aluminium nitride ceramic baseplate | |
| CN102427153A (en) | Aluminum nitride ceramic substrate 30 watt 6dB attenuation plate | |
| CN102361134A (en) | 30W-10dB attenuation plate of aluminium nitride ceramic substrate | |
| CN102709631A (en) | 30W 13db aluminum nitride ceramic substrate attenuation slice | |
| CN102361122A (en) | 30W-10dB attenuation plate of aluminium nitride ceramic substrate | |
| CN202259636U (en) | 30W-20dB aluminum nitride ceramic substrate attenuation sheet | |
| CN202121043U (en) | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate | |
| CN102738546A (en) | 30-Watt 9dB attenuator | |
| CN102723554A (en) | 1-watt 5dB attenuation piece for aluminum oxide ceramic substrate | |
| CN202178362U (en) | High-power aluminum-nitride ceramic baseplate 100W 30dB attenuation sheet | |
| CN202259638U (en) | 200 W-30 dB attenuation sheet with nitride ceramic substrate | |
| CN202121045U (en) | Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet | |
| CN102361129A (en) | 20W and 9dB attenuator with aluminium nitride ceramic baseplate | |
| CN102354784A (en) | Large power aluminum nitride ceramic substrate 100 watt 30 dB attenuation plate | |
| CN102709635A (en) | 30-watt 14dB attenuation sheet of aluminum nitride ceramic substrate | |
| CN102332627A (en) | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate | |
| CN102361139A (en) | 30W and 20dB attenuator with aluminium nitride ceramic baseplate | |
| CN102723553A (en) | 1-watt 8dB attenuation piece for aluminum oxide ceramic substrate | |
| CN102361141A (en) | 200W 30dB attenuation sheet of aluminum nitride ceramic substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20120908 |