CN202121043U - 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate - Google Patents
150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate Download PDFInfo
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- CN202121043U CN202121043U CN 201120259855 CN201120259855U CN202121043U CN 202121043 U CN202121043 U CN 202121043U CN 201120259855 CN201120259855 CN 201120259855 CN 201120259855 U CN201120259855 U CN 201120259855U CN 202121043 U CN202121043 U CN 202121043U
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Abstract
The utility model discloses a 150 tile 30 dB attenuation sheet of a high power aluminum nitride ceramic substrate, comprising an aluminum nitride substrate of 9.55*6.35 *1 mm. The back side of the aluminum nitride substrate is printed with a back guide layer, and the right side is printed with a conducting wire and a resistor. The conducting wire is connected with the resistor to form an attenuation circuit, the resistor is printed with a glass protection film, the glass protection film and the conducting wire are printed with first black protection films, and the first black protection film is printed with a medium layer. In the attenuation sheet, the first black protection film is printed with the medium layer additionally, so that the attenuation precision of the attenuation sheet can be improved effectively, and accordingly, the attenuation sheet can satisfy the application requirement of current 3G network and the technical requirement for being able to bear a 150 tile power.
Description
Technical field
The utility model relates to a kind of high-power aluminium nitride ceramics substrate attenuator, the attenuator of 150 watts of 30dB of particularly a kind of high-power aluminium nitride ceramics substrate.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.And attenuator not only can absorb in the communication component power of reverse input in communication base station, and can extract part signal in the communication component, to monitoring in real time the base station, thereby equipment is formed effective protection.
Attenuator can not be influential to two terminal circuits as a power consumption component, that is to say that it should all mate with two terminal circuits.The aluminium nitride ceramics attenuator of present domestic 150W-30dB, its attenuation accuracy can only accomplish mostly that not only minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration, and the signal that output obtains does not meet actual requirement.Particularly when attenuator used frequency range to be higher than 2G, its attenuation accuracy did not often reach requirement, and it is big that return loss becomes, and had satisfied not the above frequency range application requirements of 2G.
The utility model content
Deficiency to above-mentioned prior art; The technical problem that the utility model will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 30 ± 1dB in the 3G frequency range with interior attenuation accuracy; It is in 1.2 that standing wave requires at 3G frequency range input, and output is in 1.25, can satisfy the application requirements of present 3G network and can bear the high-power aluminium nitride ceramics substrate attenuator of 150 watts power.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
150 watts of 30dB attenuators of a kind of high-power aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 9.55*6.35*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
Preferably, be printed with first black protective film on said glass protection film and the lead, be printed with a dielectric layer on said first black protective film, be printed with second black protective film on the said dielectric layer.
Preferably, said back of the body conducting shell, lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Technique scheme has following beneficial effect: this attenuator with the aluminium nitride substrate of 9.55*6.35*1MM as benchmark; On first black protective film, printed additional one deck dielectric layer; Can effectively improve the attenuation accuracy of attenuator like this, make this attenuator under the dimensions of above-mentioned aluminium nitride substrate, can arrive impedance 50 ± 1.5 Ω, be 30 ± 1dB in the 3G frequency range with interior attenuation accuracy; It is in 1.2 that standing wave requires at 3G frequency range input; Output is in 1.25, can satisfy the application requirements of present 3G network and the specification requirement that can bear 150 watts power, has broken the situation that original attenuator can only be applied to low frequency; Make attenuator can be applied to the network of 2G-3G, filled up the domestic blank that can not produce 150 watts of 30dB attenuators.
Above-mentioned explanation only is the general introduction of the utility model technical scheme, in order more to know the technological means of understanding the utility model, and can implement according to the content of specification, below with the preferred embodiment of the utility model and conjunction with figs. specify as after.The embodiment of the utility model is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Describe in detail below in conjunction with the preferred embodiment of accompanying drawing to the utility model.
As shown in Figure 1; 150 watts of 30dB attenuators of this high-power aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 9.55*6.35*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, R4 and R5, and lead 2 connects above-mentioned resistance R 1, R2, R3, R4, R5 and forms attenuator circuit; The earth terminal of attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit conducting.Back of the body conducting shell, lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
R1, R2, R3, R4, R5 are printed with glass protection film 3 on resistance, are printed with on glass protection film 3 and the lead 2 on first black protective film, 4, the first black protective films 4 and are printed with a dielectric layer 5.Be printed with second black protective film on the dielectric layer 5, can print brand and model on second black protective film.First black protective film, second black protective film can play the effect of duplicate protection to attenuator circuit.
The impedance of this attenuator input and ground connection is 50 ± 1.5 Ω, and the impedance of output and ground is 50 ± 1.5 Ω.Signal gets into attenuator from input, through R1, R2, R5, R3, the R4 progressively absorption to power, exports actual needed signal from output from output.
This attenuator with the aluminium nitride substrate of 9.55*6.35*1MM as benchmark; On first black protective film, printed additional one deck dielectric layer; Can effectively improve the attenuation accuracy of attenuator like this, adopt this structure can increase resistance R 3 simultaneously, the resistor area of R4; Its anti-high and low-temp impact property is increased, and then avoided the risk that high temperature breaks down to the quenching wound of resistance when the output welding lead.Make this attenuator can arrive impedance 50 ± 1.5 Ω down in the dimensions (9.55*6.35*1MM) of above-mentioned aluminium nitride substrate; Is 30 ± 1dB in the 3G frequency range with interior attenuation accuracy; It is in 1.2 that standing wave requires at 3G frequency range input; Output is in 1.25, can satisfy the application requirements of present 3G network and the specification requirement that can bear 150 watts power, has broken the situation that original attenuator can only be applied to low frequency; Make attenuator can be applied to the network of 2G-3G, filled up the domestic blank that can not produce 150 watts of 30dB attenuators.
More than 150 watts of 30dB attenuators of a kind of high-power aluminium nitride ceramics substrate that the utility model embodiment is provided carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the utility model embodiment, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as the restriction to the utility model, and all any changes of being made according to the utility model design philosophy are all within the protection range of the utility model.
Claims (3)
1. 150 watts of 30dB attenuators of a high-power aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 9.55*6.35*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
2. 150 watts of 30dB attenuators of high-power aluminium nitride ceramics substrate according to claim 1; It is characterized in that: be printed with first black protective film on said glass protection film and the lead; Be printed with a dielectric layer on said first black protective film, be printed with second black protective film on the said dielectric layer.
3. 150 watts of 30dB attenuators of high-power aluminium nitride ceramics substrate according to claim 1, it is characterized in that: said back of the body conducting shell, lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120259855 CN202121043U (en) | 2011-07-22 | 2011-07-22 | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120259855 CN202121043U (en) | 2011-07-22 | 2011-07-22 | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202121043U true CN202121043U (en) | 2012-01-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120259855 Expired - Fee Related CN202121043U (en) | 2011-07-22 | 2011-07-22 | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202121043U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332630A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | Large-power 150-watt and 30-dB attenuation sheet for aluminum-nitride-ceramic substrate |
| CN104241763A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice |
-
2011
- 2011-07-22 CN CN 201120259855 patent/CN202121043U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332630A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | Large-power 150-watt and 30-dB attenuation sheet for aluminum-nitride-ceramic substrate |
| CN104241763A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-27 dB attenuation slice |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120118 Termination date: 20120722 |