CN102723554A - 1-watt 5dB attenuation piece for aluminum oxide ceramic substrate - Google Patents
1-watt 5dB attenuation piece for aluminum oxide ceramic substrate Download PDFInfo
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- CN102723554A CN102723554A CN2012102166002A CN201210216600A CN102723554A CN 102723554 A CN102723554 A CN 102723554A CN 2012102166002 A CN2012102166002 A CN 2012102166002A CN 201210216600 A CN201210216600 A CN 201210216600A CN 102723554 A CN102723554 A CN 102723554A
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Abstract
The invention discloses a 1-watt 5dB attenuation piece for an aluminum oxide ceramic substrate. The attenuation piece comprises an aluminum oxide ceramic substrate with a size of 2*3.5*0.635mm, wherein the back surface of the aluminum oxide substrate is printed with a back conductive layer, the front surface of the aluminum oxide substrate is printed with a conducting wire and a film-shaped resistor, the resistor adopts a multi-printing one-step sintering molding technology, so that the phenomenon of the resistance change of the resistor caused by the repeated sintering can be avoided, a high-temperature protecting film is printed on the resistor, and the damage of the high temperature on the resistor during the laser accurate cutting can be avoided, so that the debugging precision can be guaranteed. The attenuation piece adequately considers each performance index on the scheme design, and the attenuation piece is high in fluency and non-inductive, so that the situation that the original attenuation piece is only applied to the low fluency condition can be broken, the application requirement on a current 3G network can be met, and a series product line of the 1-watt fixed film-shaped resistor type attenuation piece can be extended.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, the attenuator of 1 watt of 5dB of particularly a kind of aluminium oxide ceramic substrate.
Background technology
The attenuator of at present integrated three membranaceous resistive arrangement is widely used in apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.The working load sheet can only merely consume the power of absorbing redundant; Analyze and use attenuator can also extract the signal that needs simultaneously at the power that absorbs reverse input; And on high-frequency circuit, adjust power level, and decouple, relevant device has been played protective effect.
Since more Zao with manufacturing abroad than domestic starting to the research and development of like product, the status of on product line still is product performance, all having the advantage.Existing attenuator attenuation accuracy is low on the domestic market simultaneously, and employable frequency range relative narrower.The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 5 ± 0.5dB in the 3G frequency range with interior attenuation accuracy, and standing wave requires input, output in 1.2, can satisfy 1 watt of 5dB attenuator of power aluminium oxide ceramic substrate of the application requirements of present 3G network; Replace external like product, and on characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
1 watt of 5dB attenuator of a kind of aluminium oxide ceramic substrate; It comprises that one is of a size of the aluminum oxide substrate of 2*3.5*0.635MM; The back up of said aluminum oxide substrate has back of the body conducting shell, and the front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said resistance adopts and repeatedly prints once sintered forming technique; Avoided resistance to produce the phenomenon of change in resistance because of sintering repeatedly; Be printed with the high temperature protection film on the said resistance, when laser accurately cuts, place the destruction of high temperature, to guarantee adjustment accuracy resistance.
Preferably, said membranaceous resistance adopts the left-right symmetric design, to guarantee the stability of signal.
Preferably, said circuit adopts the series-parallel circuit design, and monolateral earth-continuity is adopted in said parallel connection.
Preferably, said membranaceous resistance adopts the high temperature sintering resistance slurry.
Technique scheme has following beneficial effect: 1 watt of 5dB attenuator of this aluminium oxide ceramic substrate is in a state of symmetry fully by attenuator circuit; This small product size is little; Frequency characteristic is good; The stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 1 watt of 5dB attenuator of this aluminium oxide ceramic substrate comprises that one is of a size of the aluminum oxide substrate 1 of 2*3.5*0.635MM; The back up of aluminum oxide substrate 1 has back of the body conducting shell, and the front of aluminum oxide substrate 1 is printed with lead 2 and membranaceous resistance R 1, R2, R3, and membranaceous resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminum oxide substrate; Membranaceous resistance R 1, R2, the last glass protection film 3 that is printed with of R3; The upper surface of lead 2 and high temperature protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and membranaceous resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 1 watt of 5dB attenuator of this aluminium oxide ceramic substrate requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of membranaceous resistance R 1, R3, R2, exports actual needed signal from output.
As substrate, this small product size is little with the aluminum oxide substrate that is of a size of 2*3.5*0.635MM for 1 watt of 5dB attenuator of this aluminium oxide ceramic substrate, and frequency characteristic is good; The stability of circuit gets a promotion; Broken the situation that original attenuator can only be applied to low frequency, special design simultaneously lets attenuator circuit be in a state of symmetry fully, makes the stability of circuit get a promotion; Broken the situation that original attenuator can only be applied to low frequency, made it can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
More than 1 watt of 5dB attenuator of a kind of aluminium oxide ceramic substrate that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. 1 watt of 5dB attenuator of an aluminium oxide ceramic substrate; It is characterized in that: it comprises that one is of a size of the aluminum oxide substrate of 2*3.5*0.635MM; The back up of said aluminum oxide substrate has back of the body conducting shell, and the front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said resistance adopts and repeatedly prints once sintered forming technique; Avoided resistance to produce the phenomenon of change in resistance because of sintering repeatedly; Be printed with the high temperature protection film on the said resistance, when laser accurately cuts, place the destruction of high temperature, to guarantee adjustment accuracy resistance.
2. 1 watt of 5dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said membranaceous resistance adopts the left-right symmetric design, to guarantee the stability of signal.
3. 1 watt of 5dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said circuit adopts the series-parallel circuit design, and monolateral earth-continuity is adopted in said parallel connection.
4. 1 watt of 5dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said membranaceous resistance adopts the high temperature sintering resistance slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166002A CN102723554A (en) | 2012-06-28 | 2012-06-28 | 1-watt 5dB attenuation piece for aluminum oxide ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166002A CN102723554A (en) | 2012-06-28 | 2012-06-28 | 1-watt 5dB attenuation piece for aluminum oxide ceramic substrate |
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| Publication Number | Publication Date |
|---|---|
| CN102723554A true CN102723554A (en) | 2012-10-10 |
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| CN2012102166002A Pending CN102723554A (en) | 2012-06-28 | 2012-06-28 | 1-watt 5dB attenuation piece for aluminum oxide ceramic substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241790A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Symmetrical 2-Watt 10-dB attenuation piece |
| CN106001939A (en) * | 2016-06-27 | 2016-10-12 | 维沃移动通信有限公司 | Cutting method of ceramic substrate and electronic device |
| CN106711560A (en) * | 2016-11-24 | 2017-05-24 | 苏州市新诚氏电子有限公司 | 100W attenuation sheet of high-power aluminum nitride ceramic substrate, and production method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN101937747A (en) * | 2009-07-02 | 2011-01-05 | 华为技术有限公司 | Chip resistor and manufacturing method thereof and communication equipment |
| CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
| CN102427153A (en) * | 2011-09-08 | 2012-04-25 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 30 watt 6dB attenuation plate |
-
2012
- 2012-06-28 CN CN2012102166002A patent/CN102723554A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN101937747A (en) * | 2009-07-02 | 2011-01-05 | 华为技术有限公司 | Chip resistor and manufacturing method thereof and communication equipment |
| CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
| CN102427153A (en) * | 2011-09-08 | 2012-04-25 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 30 watt 6dB attenuation plate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241790A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Symmetrical 2-Watt 10-dB attenuation piece |
| CN106001939A (en) * | 2016-06-27 | 2016-10-12 | 维沃移动通信有限公司 | Cutting method of ceramic substrate and electronic device |
| CN106711560A (en) * | 2016-11-24 | 2017-05-24 | 苏州市新诚氏电子有限公司 | 100W attenuation sheet of high-power aluminum nitride ceramic substrate, and production method thereof |
| CN106711560B (en) * | 2016-11-24 | 2020-12-01 | 苏州市新诚氏通讯电子股份有限公司 | High-power aluminum nitride ceramic substrate 100W attenuation sheet and production method thereof |
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Application publication date: 20121010 |