CN102723548A - 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet - Google Patents
1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet Download PDFInfo
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- CN102723548A CN102723548A CN2012102165118A CN201210216511A CN102723548A CN 102723548 A CN102723548 A CN 102723548A CN 2012102165118 A CN2012102165118 A CN 2012102165118A CN 201210216511 A CN201210216511 A CN 201210216511A CN 102723548 A CN102723548 A CN 102723548A
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- aluminum oxide
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Abstract
The invention discloses a 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet, which comprises an ultra-thin aluminum oxide base plate with thickness of 0.635 m, wherein high-temperature silver paste is printed on the whole back surface of the aluminum oxide base plate; high-temperature silver paste electric wires are printed on the front surface of the aluminum oxide base plate; black resistors are printed between the high-temperature silver paste electric wires and sequentially distributed to form an attenuation circuit; an attenuation value of the attenuation circuit is obtained by accurately adjusting a resistance value; and the standing wave characteristic of the circuit is obtained by distribution of the wires. The attenuation sheet has the advantages that during design, impacts of voltage breakdown, dielectric constant and capacitance effect after the base plate is thinned are taken into full consideration, and the performance of the attenuation sheet can meet using requirements of third-generation (3G) frequency in the market by reasonable line design.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, 1 watt of 20dB attenuator of particularly a kind of low-power aluminium oxide ceramic substrate.
Background technology
The attenuator of at present integrated three membranaceous resistive arrangement is widely used in apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.The working load sheet can only merely consume the power of absorbing redundant; Analyze and use attenuator can also extract the signal that needs simultaneously at the power that absorbs reverse input; And on high-frequency circuit, adjust power level, and decouple, relevant device has been played protective effect.
Since more Zao with manufacturing abroad than domestic starting to the research and development of like product, the status of on product line still is product performance, all having the advantage.Existing attenuator attenuation accuracy is low on the domestic market simultaneously, and employable frequency range relative narrower.The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 20 ± 1dB in the 3G frequency range with interior attenuation accuracy, and standing wave requires input, output in 1.2, can satisfy 1 watt of 20dB attenuator of low-power aluminium oxide ceramic substrate of the application requirements of present 3G network; Replace external like product, and on characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
1 watt of 20dB attenuator of a kind of low-power aluminium oxide ceramic substrate; It comprises the ultra-thin shape aluminum oxide substrate of a 0.635mm thickness; The whole back up of said aluminum oxide substrate has high temperature silver slurry; The front of said aluminum oxide substrate is printed with high temperature silver slurry electric lead, is printed with black resistance between the said high temperature silver slurry electric lead, and said circuit is through the formation attenuator circuit of arranging successively of said resistance; The pad value of said attenuator circuit draws through the said resistance of accurate debugging, and the stationary wave characteristic of said circuit is arranged through lead and drawn.
Preferably, said circuit has increased the ability that its proof voltage punctures through thickening said resistance thickness.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck acid-alkali-corrosive-resisting diaphragm.
Technique scheme has following beneficial effect: 1 watt of 20dB attenuator of this low-power aluminium oxide ceramic substrate adopts ultra-thin shape substrate design, has reduced material cost, and line design lets attenuator circuit be in a state of symmetry fully; This small product size is little; Frequency characteristic is good, and the proof voltage breakdown performance is stable, and the stability of circuit gets a promotion; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 1 watt of 20dB attenuator of this low-power aluminium oxide ceramic substrate comprises that the ultra-thin shape aluminum oxide substrate 1 of a 0.635mm thickness, the whole back up of aluminum oxide substrate 1 have high temperature silver slurry; The front of aluminum oxide substrate 1 is printed with high temperature silver slurry electric lead 2 and membranaceous resistance R 1, R2, R3; Membranaceous resistance R 1, R2, R3 are connected to form attenuator circuit through lead, and attenuator circuit is electrically connected with carrying on the back conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminum oxide substrate; Membranaceous resistance R 1, R2, the last glass protection film 3 that is printed with of R3; The upper surface of lead 2 and glass protection film 3 also is printed with the hard diaphragm 4 of one deck black acid-alkali-corrosive-resisting, can form protection to lead 2 and membranaceous resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 1 watt of 20dB attenuator of this low-power aluminium oxide ceramic substrate requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal gets into attenuator from input, through the progressively absorption to power of membranaceous resistance R 1, R3, R2, exports actual needed signal from output.
1 watt of 20dB attenuator of this low-power aluminium oxide ceramic substrate adopts ultra-thin shape substrate design, has reduced material cost, and line design lets attenuator circuit be in a state of symmetry fully; This small product size is little; Frequency characteristic is good, and the proof voltage breakdown performance is stable, and the stability of circuit gets a promotion; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
More than 1 watt of 20dB attenuator of a kind of low-power aluminium oxide ceramic substrate that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 1 watt of 20dB attenuator of a low-power aluminium oxide ceramic substrate; It is characterized in that: it comprises the ultra-thin shape aluminum oxide substrate of a 0.635mm thickness; The whole back up of said aluminum oxide substrate has high temperature silver slurry; The front of said aluminum oxide substrate is printed with high temperature silver slurry electric lead, is printed with black resistance between the said high temperature silver slurry electric lead, and said circuit is through the formation attenuator circuit of arranging successively of said resistance; The pad value of said attenuator circuit draws through the said resistance of accurate debugging, and the stationary wave characteristic of said circuit is arranged through lead and drawn.
2. 1 watt of 20dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said circuit has increased the ability that its proof voltage punctures through thickening said resistance thickness.
3. 1 watt of 20dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck acid-alkali-corrosive-resisting diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165118A CN102723548A (en) | 2012-06-28 | 2012-06-28 | 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102165118A CN102723548A (en) | 2012-06-28 | 2012-06-28 | 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102723548A true CN102723548A (en) | 2012-10-10 |
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|---|---|---|---|
| CN2012102165118A Pending CN102723548A (en) | 2012-06-28 | 2012-06-28 | 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241772A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece |
| CN104241756A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-attenuation-value 10 W-2 dB attenuation slice |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361124A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W3dB attenuating piece of aluminium nitride ceramic substrate |
-
2012
- 2012-06-28 CN CN2012102165118A patent/CN102723548A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361124A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W3dB attenuating piece of aluminium nitride ceramic substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241756A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-attenuation-value 10 W-2 dB attenuation slice |
| CN104241772A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece |
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Application publication date: 20121010 |