CN104241772A - Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece - Google Patents
Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece Download PDFInfo
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- CN104241772A CN104241772A CN201410234724.2A CN201410234724A CN104241772A CN 104241772 A CN104241772 A CN 104241772A CN 201410234724 A CN201410234724 A CN 201410234724A CN 104241772 A CN104241772 A CN 104241772A
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Abstract
The invention discloses a voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece which comprises a thin aluminum oxide ceramic substrate with the thickness of 0.635 mm. The whole back face of the aluminum oxide ceramic substrate is printed with high-temperature silver paste, the front face of the aluminum oxide ceramic substrate is printed with high-temperature silver paste wires, black resistors are printed between the high-temperature silver paste wires, a circuit forms an attenuation circuit according to the sequent distribution of the resistors, the attenuation value of the attenuation circuit is obtained by accurately adjusting the resistance value, and the standing wave property of the circuit is obtained through wire distribution. According to the voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece, in the design, the influences of the capacitance effect, dielectric constants and voltage breakdown occurring after the substrate is thinned are sufficiently considered, and the performance can meet using requirements of 3G frequency in the existing market through the reasonable circuit design.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, particularly a kind of proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators.
Background technology
The attenuator being integrated with five membranaceous resistive arrangement is at present widely used in the apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.Working load sheet merely can only consume and absorb unnecessary power; and the signal using attenuator can also extract needs at the power absorbing oppositely input is analyzed simultaneously; and on high-frequency circuit, adjust power level, decoupling, protective effect is served to relevant device.
Due to the external research and development to like product and manufacture than domestic start to walk Zao, status that product line or product performance are all had the advantage.On domestic market, existing attenuator attenuation accuracy is low simultaneously, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is, all mates with two terminal circuits.When attenuation accuracy or VSWR do not reach require time, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of impedance and meets 50.1 ± 3% Ω, within 3G frequency range, attenuation accuracy is 29 ± 1dB, standing wave requires that input, output are within 1.2, the proof voltage aluminium oxide ceramic substrate that the application that can meet current 3G network requires 2 watts of 29dB attenuators, replace same kind of products at abroad, and characteristically fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators, it comprises the thin type aluminum oxide substrate of a 0.635mm thickness, the whole back up of described aluminum oxide substrate has high temperature silver slurry, the front of described aluminum oxide substrate is printed with high temperature silver slurry electric lead, black resistance is printed with between described high temperature silver slurry electric lead, described circuit forms attenuator circuit by the arrangement successively of described resistance, the pad value of described attenuator circuit draws by accurately debugging described resistance, and the stationary wave characteristic of described circuit is drawn by wire arrangement.
Preferably, described membranaceous resistance is printed with insulation transparent protective film.
Preferably, the upper surface of described wire and glass protection film is also printed with one deck low thermal coefficient of expansion black epoxy film.
Technique scheme has following beneficial effect: this proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators are in the state of a full symmetric by attenuator circuit, this small product size is little, frequency characteristic is good, the application of low thermal coefficient of expansion black epoxy film, the ability making it tolerate high/low temperature is strengthened, the stability of circuit gets a promotion, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 2G-3G, this attenuator has taken into full account the thinning rear voltage breakdown of substrate in design simultaneously, dielectric constant, the impact of capacity effect.The production of the microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication can be widely used in.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators comprise the thin type aluminum oxide substrate 1 of a 0.635mm thickness, the back up of aluminum oxide substrate 1 has back of the body conducting shell, the front of aluminum oxide substrate 1 is printed with wire 2 and membranaceous resistance R1, R2, R3, R4, R5, membranaceous resistance R1, R2, R3, R4, R5 are connected to form attenuator circuit by wire, and attenuator circuit is electrically connected with back of the body conducting shell by silver slurry, thus makes attenuator circuit earth-continuity.Membranaceous resistance R1, R2, R3, R4, R5 are printed with glass protection film 3; the upper surface of wire 2 and glass protection film 3 is also printed with one deck low thermal coefficient of expansion black epoxy film 4, can form protection like this to wire 2 and membranaceous resistance R1, R2, R3, R4, R5.
This proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators require that the impedance of input and ground connection is 50.1 ± 3% Ω, and the impedance of output and ground is 50.1 ± 3% Ω.Signal input part enters attenuator, through membranaceous resistance R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators are in the state of a full symmetric by attenuator circuit, this small product size is little, frequency characteristic is good, the application of low thermal coefficient of expansion black epoxy film, the ability making it tolerate high/low temperature is strengthened, the stability of circuit gets a promotion, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 2G-3G, this attenuator has taken into full account the thinning rear voltage breakdown of substrate in design simultaneously, dielectric constant, the impact of capacity effect.The production of the microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication can be widely used in.
Above a kind of proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators that the embodiment of the present invention provides are described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a proof voltage aluminium oxide ceramic substrate 2 watts of 29dB attenuators, it is characterized in that: it comprises the thin type aluminum oxide substrate of a 0.635mm thickness, the whole back up of described aluminum oxide substrate has high temperature silver slurry, the front of described aluminum oxide substrate is printed with high temperature silver slurry electric lead, black resistance is printed with between described high temperature silver slurry electric lead, described circuit forms attenuator circuit by the arrangement successively of described resistance, the pad value of described attenuator circuit draws by accurately debugging described resistance, and the stationary wave characteristic of described circuit is drawn by wire arrangement.
2. proof voltage aluminium oxide ceramic substrate according to claim 12 watts of 29dB attenuators, is characterized in that: described membranaceous resistance is printed with insulation transparent protective film.
3. proof voltage aluminium oxide ceramic substrate according to claim 12 watts of 29dB attenuators, is characterized in that: the upper surface of described wire and glass protection film is also printed with one deck low thermal coefficient of expansion black protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234724.2A CN104241772A (en) | 2014-05-29 | 2014-05-29 | Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234724.2A CN104241772A (en) | 2014-05-29 | 2014-05-29 | Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece |
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| Publication Number | Publication Date |
|---|---|
| CN104241772A true CN104241772A (en) | 2014-12-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410234724.2A Pending CN104241772A (en) | 2014-05-29 | 2014-05-29 | Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece |
Country Status (1)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4349792A (en) * | 1978-07-14 | 1982-09-14 | Kings Electronics Co., Inc. | Pi pad attenuator |
| US7583169B1 (en) * | 2007-03-22 | 2009-09-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | MEMS switches having non-metallic crossbeams |
| CN102709637A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | Aluminum oxide ceramic substrate 1W 29dB attenuation sheet |
| CN102723548A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet |
-
2014
- 2014-05-29 CN CN201410234724.2A patent/CN104241772A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4349792A (en) * | 1978-07-14 | 1982-09-14 | Kings Electronics Co., Inc. | Pi pad attenuator |
| US7583169B1 (en) * | 2007-03-22 | 2009-09-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | MEMS switches having non-metallic crossbeams |
| CN102709637A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | Aluminum oxide ceramic substrate 1W 29dB attenuation sheet |
| CN102723548A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 1W-20dB low-power aluminum oxide ceramic base plate attenuation sheet |
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Application publication date: 20141224 |