CN102709637A - Aluminum oxide ceramic substrate 1W 29dB attenuation sheet - Google Patents
Aluminum oxide ceramic substrate 1W 29dB attenuation sheet Download PDFInfo
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- CN102709637A CN102709637A CN2012102161653A CN201210216165A CN102709637A CN 102709637 A CN102709637 A CN 102709637A CN 2012102161653 A CN2012102161653 A CN 2012102161653A CN 201210216165 A CN201210216165 A CN 201210216165A CN 102709637 A CN102709637 A CN 102709637A
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- aluminum oxide
- attenuator
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- ceramic substrate
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Abstract
The invention discloses an aluminum oxide ceramic substrate 1W 29dB attenuation sheet which comprises a 0.635mm-thick ultrathin aluminum oxide substrate, wherein the whole back surface of the aluminum oxide substrate is printed with high-temperature silver paste; the front surface of the aluminum oxide substrate is printed with high-temperature silver paste electrical conductors; black resistors are printed among the high-temperature silver paste electrical conductors; the circuit forms an attenuation circuit through the sequential arrangement of the resistors; the attenuation value of the attenuation circuit is obtained by accurately regulating the resistance value; and the standing wave characteristic of the circuit is obtained by the conductor arrangement. The attenuation sheet fully considers the influence on voltage breakdown, dielectric constant and capacity effect in the aspect of design after the substrate becomes thinner, and the reasonable circuit design is utilized, so that the properties of the attenuation sheet can satisfy the operational requirement for 3G frequency in the existing market.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, the attenuator of 1 watt of 29dB of particularly a kind of aluminium oxide ceramic substrate.
Background technology
The attenuator of at present integrated three membranaceous resistive arrangement is widely used in apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.The working load sheet can only merely consume the power of absorbing redundant; Analyze and use attenuator can also extract the signal that needs simultaneously at the power that absorbs reverse input; And on high-frequency circuit, adjust power level, and decouple, relevant device has been played protective effect.
Since more Zao with manufacturing abroad than domestic starting to the research and development of like product, the status of on product line still is product performance, all having the advantage.Existing attenuator attenuation accuracy is low on the domestic market simultaneously, and employable frequency range relative narrower.The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 29 ± 1dB in the 3G frequency range with interior attenuation accuracy, and standing wave requires input, output in 1.2, can satisfy 1 watt of 29dB attenuator of power aluminium oxide ceramic substrate of the application requirements of present 3G network; Replace external like product, and on characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
1 watt of 29dB attenuator of a kind of aluminium oxide ceramic substrate; It comprises the ultra-thin shape aluminum oxide substrate of a 0.635mm thickness; The whole back up of said aluminum oxide substrate has high temperature silver slurry; The front of said aluminum oxide substrate is printed with high temperature silver slurry electric lead, is printed with black resistance between the said high temperature silver slurry electric lead, and said circuit is through the formation attenuator circuit of arranging successively of said resistance; The pad value of said attenuator circuit draws through the said resistance of accurate debugging, and the stationary wave characteristic of said circuit is arranged through lead and drawn.
Preferably, be printed with the insulation transparent protective film on the said membranaceous resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck low thermal coefficient of expansion black epoxy film.
Preferably, said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
Technique scheme has following beneficial effect: 1 watt of 29dB attenuator of this aluminium oxide ceramic substrate is in a state of symmetry fully by attenuator circuit; This small product size is little, and frequency characteristic is good, the application of low thermal coefficient of expansion black epoxy film; Its ability that tolerates high low temperature is strengthened; The stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 1 watt of 29dB attenuator of this aluminium oxide ceramic substrate comprises the ultra-thin shape aluminum oxide substrate 1 of a 0.635mm thickness; The back up of aluminum oxide substrate 1 has back of the body conducting shell, and the front of aluminum oxide substrate 1 is printed with lead 2 and membranaceous resistance R 1, R2, R3, and membranaceous resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminum oxide substrate; Membranaceous resistance R 1, R2, the last glass protection film 3 that is printed with of R3; The upper surface of lead 2 and glass protection film 3 also is printed with one deck low thermal coefficient of expansion black epoxy film 4, can form protection to lead 2 and membranaceous resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 1 watt of 29dB attenuator of this aluminium oxide ceramic substrate requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of membranaceous resistance R 1, R3, R2, exports actual needed signal from output.
1 watt of 29dB attenuator of this aluminium oxide ceramic substrate is in a state of symmetry fully by attenuator circuit; This small product size is little, and frequency characteristic is good, the application of low thermal coefficient of expansion black epoxy film; Its ability that tolerates high low temperature is strengthened; The stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
More than 1 watt of 29dB attenuator of a kind of aluminium oxide ceramic substrate that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. 1 watt of 29dB attenuator of an aluminium oxide ceramic substrate; It is characterized in that: it comprises the ultra-thin shape aluminum oxide substrate of a 0.635mm thickness; The whole back up of said aluminum oxide substrate has high temperature silver slurry; The front of said aluminum oxide substrate is printed with high temperature silver slurry electric lead, is printed with black resistance between the said high temperature silver slurry electric lead, and said circuit is through the formation attenuator circuit of arranging successively of said resistance; The pad value of said attenuator circuit draws through the said resistance of accurate debugging, and the stationary wave characteristic of said circuit is arranged through lead and drawn.
2. 1 watt of 29dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: be printed with the insulation transparent protective film on the said membranaceous resistance.
3. 1 watt of 29dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck low thermal coefficient of expansion black protective film.
4. 1 watt of 29dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102161653A CN102709637A (en) | 2012-06-28 | 2012-06-28 | Aluminum oxide ceramic substrate 1W 29dB attenuation sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102161653A CN102709637A (en) | 2012-06-28 | 2012-06-28 | Aluminum oxide ceramic substrate 1W 29dB attenuation sheet |
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| Publication Number | Publication Date |
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| CN102709637A true CN102709637A (en) | 2012-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102161653A Pending CN102709637A (en) | 2012-06-28 | 2012-06-28 | Aluminum oxide ceramic substrate 1W 29dB attenuation sheet |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241772A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442295A (en) * | 2007-10-12 | 2009-05-27 | 阎跃军 | Coaxial connector type fixed attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| JP2010186132A (en) * | 2009-02-13 | 2010-08-26 | Nec Corp | Reflected light attenuator |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
-
2012
- 2012-06-28 CN CN2012102161653A patent/CN102709637A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101442295A (en) * | 2007-10-12 | 2009-05-27 | 阎跃军 | Coaxial connector type fixed attenuator |
| JP2010186132A (en) * | 2009-02-13 | 2010-08-26 | Nec Corp | Reflected light attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241772A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Voltage resistance aluminum oxide ceramic substrate 2-W 29-dB attenuation piece |
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Application publication date: 20121003 |