CN102723555A - 1-watt 3dB attenuator for aluminum oxide ceramic substrate - Google Patents
1-watt 3dB attenuator for aluminum oxide ceramic substrate Download PDFInfo
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- CN102723555A CN102723555A CN2012102166411A CN201210216641A CN102723555A CN 102723555 A CN102723555 A CN 102723555A CN 2012102166411 A CN2012102166411 A CN 2012102166411A CN 201210216641 A CN201210216641 A CN 201210216641A CN 102723555 A CN102723555 A CN 102723555A
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- attenuator
- aluminum oxide
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Abstract
The invention discloses a thin 1-watt 3dB attenuator for an aluminum oxide ceramic substrate. The 1-watt 3dB attenuator comprises an aluminum oxide substrate, wherein a back conductor layer is printed on a back side of the aluminum oxide substrate; a lead and membrane-shaped resistors are printed on a front side of the aluminum oxide substrate; the membrane-shaped resistors are connected through the lead to form a TT type attenuation circuit; the attenuation circuit is symmetrical about a central line of the aluminum oxide substrate; an output end and an input end of the attenuation circuit are respectively connected with a bonding pad; and the two bonding pads are symmetrical about the central line of the aluminum ceramic substrate. According to the scheme design of the attenuator, various performance indexes are fully considered, high frequency and induction freeness are realized, the situation that an original attenuator is only applied to low frequency is broken through, the application requirement of a current 3G (3rd Generation) network can be met and a series production line of a 1-watt fixed membrane-like resistance type attenuator is also extended.
Description
Technical field
The present invention relates to a kind of aluminium oxide ceramics attenuator, 1 watt of 3dB attenuator of particularly a kind of thin type aluminium oxide ceramic substrate.
Background technology
The attenuator of at present integrated three membranaceous resistive arrangement is widely used in apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.The working load sheet can only merely consume the power of absorbing redundant; Analyze and use attenuator can also extract the signal that needs simultaneously at the power that absorbs reverse input; And on high-frequency circuit, adjust power level, and decouple, relevant device has been played protective effect.
Since more Zao with manufacturing abroad than domestic starting to the research and development of like product, the status of on product line still is product performance, all having the advantage.Existing attenuator attenuation accuracy is low on the domestic market simultaneously, and employable frequency range relative narrower.The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.
At present the substrate of main flow attenuator adopts 1mm thickness, but increasingly high along with cost requirement need more effectively reduce the application of base material, but substrate attenuation meeting emergent power reduces, and resistance to sparking such as can reduce at phenomenon.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 3 ± 0.5dB in the 3G frequency range with interior attenuation accuracy, and standing wave requires input, output in 1.2, can satisfy 1 watt of 3dB attenuator of power thin type aluminium oxide ceramic substrate of the application requirements of present 3G network; Replace external like product, and on characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
3. 1 watt of 3dB attenuator of a thin type aluminium oxide ceramic substrate; It comprises one aluminum oxide substrate; The back up of said aluminum oxide substrate has back of the body conducting shell; The front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form T type attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
Preferably, said aluminum oxide substrate adopts the ultra-thin substrate of 0.635mm.
Preferably, said back of the body conducting shell and lead are formed by the printing of high temperature silver slurry.
Technique scheme has following beneficial effect: 1 watt of 3dB attenuator of this thin type aluminium oxide ceramic substrate is in a state of symmetry fully by attenuator circuit; This small product size is little; Frequency characteristic is good; The stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, makes attenuator can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 1 watt of 3dB attenuator of this aluminium oxide ceramic substrate comprises an aluminum oxide substrate 1; The back up of aluminum oxide substrate 1 has back of the body conducting shell, and the front of aluminum oxide substrate 1 is printed with lead 2 and membranaceous resistance R 1, R2, R3, and membranaceous resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminum oxide substrate; Membranaceous resistance R 1, R2, the last glass protection film 3 that is printed with of R3; The upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and membranaceous resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 1 watt of 3dB attenuator of this thin type aluminium oxide ceramic substrate requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of membranaceous resistance R 1, R3, R2, exports actual needed signal from output.
1 watt of 3dB attenuator of this thin type aluminium oxide ceramic substrate small product size is little; Frequency characteristic is good, and the stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency; Special design simultaneously lets attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, broken the situation that original attenuator can only be applied to low frequency, make it can be applied to the network of 2G-3G.Can be widely used in the production of microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication.
More than 1 watt of 3dB attenuator of a kind of thin type aluminium oxide ceramic substrate that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 1 watt of 3dB attenuator of a thin type aluminium oxide ceramic substrate; It is characterized in that: it comprises one aluminum oxide substrate; The back up of said aluminum oxide substrate has back of the body conducting shell; The front of said aluminum oxide substrate is printed with lead and membranaceous resistance, and said lead connects said membranaceous resistance and is connected to form T type attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminum oxide substrate.
2. 1 watt of 3dB attenuator of thin type aluminium oxide ceramic substrate according to claim 1 is characterized in that: said aluminum oxide substrate adopts the ultra-thin substrate of 0.635mm.
3. 1 watt of 3dB attenuator of aluminium oxide ceramic substrate according to claim 1 is characterized in that: said back of the body conducting shell and lead are formed by the printing of high temperature silver slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166411A CN102723555A (en) | 2012-06-28 | 2012-06-28 | 1-watt 3dB attenuator for aluminum oxide ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166411A CN102723555A (en) | 2012-06-28 | 2012-06-28 | 1-watt 3dB attenuator for aluminum oxide ceramic substrate |
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| Publication Number | Publication Date |
|---|---|
| CN102723555A true CN102723555A (en) | 2012-10-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102166411A Pending CN102723555A (en) | 2012-06-28 | 2012-06-28 | 1-watt 3dB attenuator for aluminum oxide ceramic substrate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361134A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
| CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
-
2012
- 2012-06-28 CN CN2012102166411A patent/CN102723555A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
| CN102361134A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
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Application publication date: 20121010 |