CN102738544A - Aluminum nitride ceramic 30W 23dB attenuation piece - Google Patents
Aluminum nitride ceramic 30W 23dB attenuation piece Download PDFInfo
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- CN102738544A CN102738544A CN 201210218497 CN201210218497A CN102738544A CN 102738544 A CN102738544 A CN 102738544A CN 201210218497 CN201210218497 CN 201210218497 CN 201210218497 A CN201210218497 A CN 201210218497A CN 102738544 A CN102738544 A CN 102738544A
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- aluminum nitride
- aluminium nitride
- nitride substrate
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Abstract
The invention discloses an aluminum nitride ceramic 30W 23dB attenuation piece, which comprises an aluminum nitride substrate with the size of 5mm*5mm*1mm, wherein a TT type attenuation circuit is printed on the aluminum nitride substrate and consists of wires and film-shaped resistors; a back guide layer is printed on the back of the aluminum nitride substrate; the attenuation circuit is symmetric about the central line of the aluminum nitride substrate; the output end and the input end of the attenuation circuit are respectively connected with a welding plate; and the two welding plates are symmetric about the central line of the aluminum nitride substrate. According to the attenuation piece, various performance indexes are fully considered, a high-frequency non-inductive effect is achieved, the condition that the conventional attenuation piece can only be applied in a low-frequency situation is avoided, the application requirement of the current three-generation (3G) network can be met, and series product lines of the 30W attenuation piece with fixed resistors are extended.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, 30 watts of 23dB attenuators of particularly a kind of aluminium nitride ceramics.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet then can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.The attenuator of having gathered three kinds of resistive arrangement not only can absorb the power of reverse input in the communication component and on high-frequency circuit, adjust power level in communication base station, decouple, and relevant device has been played protective effect.
Because aluminium nitride ceramics still belongs to emerging industry, so on product line, do not present diversified general layout.Its attenuation accuracy of attenuator that exists on the market simultaneously can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 23 ± 1dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires input in 1.2, and output can satisfy 30 watts of 23dB attenuators of aluminium nitride ceramics of the application requirements of present 3G network in 1.25.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
30 watts of 23dB attenuators of a kind of aluminium nitride ceramics substrate; It comprises the aluminium nitride substrate of a 5*5*1MM, is printed with TT type attenuator circuit on the said aluminium nitride substrate, and said TT type attenuator circuit is made up of lead and membranaceous resistance; The back up of said aluminium nitride substrate has back of the body conducting shell; Said attenuator circuit is along the center line symmetry of said aluminium nitride substrate, and the output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
Preferably, said TT type attenuator circuit is starched the conducting of end ground connection with back of the body conducting shell through silver.
Preferably, said lead is formed by the high temperature silver slurry printing of anti-silver ion migration.
Technique scheme has following beneficial effect: 30 watts of 23dB attenuators of this aluminium nitride ceramics lead is formed by the high temperature silver slurry printing of anti-silver ion migration, makes the stability of circuit get a promotion, the small size design; Reduced cost, improved production efficiency, simultaneously because the circuit symmetrical design; This attenuator both sides power capacity is consistent, and performance is consistent, and the client does not need differentiation input and output painstakingly in use; Greatly facilitate the client; Also reduce the client and caused the generation of defective products to embody the design of hommization fool proof because the input/output terminal welding is wrong aborning, and taken into account each item index of fixed resistance formula attenuator, increased power capacity; Enlarged the scope of product line; Also break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G, filled up domestic blank.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 30 watts of 23dB attenuators of this aluminium nitride ceramics comprise the aluminium nitride substrate 1 of a 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 30 watts of 23dB attenuators of this aluminium nitride ceramics require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output.
30 watts of 23dB attenuators of this aluminium nitride ceramics lead is formed by the high temperature silver slurry printing of anti-silver ion migration, makes the stability of circuit get a promotion, the small size design; Reduced cost, improved production efficiency, simultaneously because the circuit symmetrical design; This attenuator both sides power capacity is consistent, and performance is consistent, and the client does not need differentiation input and output painstakingly in use; Greatly facilitate the client, also reduced the client and caused the generation of defective products to embody the design of hommization fool proof because the input/output terminal welding is wrong aborning, and taken into account each item index of fixed resistance formula attenuator; Increase power capacity, enlarged the scope of product line, also broken the situation that original attenuator can only be applied to low frequency; Make attenuator can be applied to the network of 2G-3G, filled up domestic blank.
More than 30 watts of 23dB attenuators of a kind of aluminium nitride ceramics that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 30 watts of 23dB attenuators of an aluminium nitride ceramics; It is characterized in that: it comprises the aluminium nitride substrate of a 5*5*1MM; Be printed with TT type attenuator circuit on the said aluminium nitride substrate; Said TT type attenuator circuit is made up of lead and membranaceous resistance, and the back up of said aluminium nitride substrate has back of the body conducting shell, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
2. 30 watts of 23dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said TT type attenuator circuit is starched the conducting of end ground connection with back of the body conducting shell through silver.
3. 30 watts of 23dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said lead is formed by the high temperature silver slurry printing of anti-silver ion migration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210218497 CN102738544A (en) | 2012-06-29 | 2012-06-29 | Aluminum nitride ceramic 30W 23dB attenuation piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210218497 CN102738544A (en) | 2012-06-29 | 2012-06-29 | Aluminum nitride ceramic 30W 23dB attenuation piece |
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| CN102738544A true CN102738544A (en) | 2012-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201210218497 Pending CN102738544A (en) | 2012-06-29 | 2012-06-29 | Aluminum nitride ceramic 30W 23dB attenuation piece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241786A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Small-size high-stability 10 W 25 dB aluminum nitride ceramic attenuation slice |
-
2012
- 2012-06-29 CN CN 201210218497 patent/CN102738544A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241786A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Small-size high-stability 10 W 25 dB aluminum nitride ceramic attenuation slice |
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Application publication date: 20121017 |