CN202259631U - 30Watt and 10dB attenuating plate of aluminum nitride ceramic substrate - Google Patents

30Watt and 10dB attenuating plate of aluminum nitride ceramic substrate Download PDF

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Publication number
CN202259631U
CN202259631U CN 201120335489 CN201120335489U CN202259631U CN 202259631 U CN202259631 U CN 202259631U CN 201120335489 CN201120335489 CN 201120335489 CN 201120335489 U CN201120335489 U CN 201120335489U CN 202259631 U CN202259631 U CN 202259631U
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China
Prior art keywords
aluminium nitride
aluminum nitride
nitride substrate
substrate
resistor
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Expired - Fee Related
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CN 201120335489
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Chinese (zh)
Inventor
郝敏
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Suzhou New Chengshi Electronic Co Ltd
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Suzhou New Chengshi Electronic Co Ltd
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Priority to CN 201120335489 priority Critical patent/CN202259631U/en
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Abstract

The utility model discloses a 30Watt and 10dB attenuating plate of an aluminum nitride ceramic substrate, which comprises an aluminum nitride substrate of 5x5x1mm. A back guide layer is printed on the back surface of the aluminum nitride substrate; a conduction wire and a resistor are printed on the front side of the aluminum nitride substrate; the conduction wire is connected with the resistor so as to form attenuation circuits, the attenuation circuits are symmetric along the central line of the aluminum nitride substrate; output ends and input ends of the attenuation circuit are respectively connected with a solder pad; and two solder pads are symmetric to each other along the central line of the aluminum nitride substrate. With the adoption of the attenuating plate, the resistor area is increased, the high/low temperature impact resistant performance is improved, the quenching injury to the resistor by the high temperature is avoided during the welding of leading wires at the output ends, and the risk of breaking in the actual use process caused by the quenching injury to the resistor is avoided, so that the performance of the attenuating plate is greatly improved so as to break through the situation that the traditional attenuating plate is only applied to low frequency, and the attenuating plate can be applied to networks from 2G to 3G.

Description

30 watts of 10dB attenuators of aluminium nitride ceramics substrate
Technical field
The utility model relates to a kind of aluminium nitride ceramics attenuator, 30 watts of 10dB attenuators of particularly a kind of aluminium nitride ceramics substrate.
Background technology
Attenuator is to require to decay to certain ratio multiple (referring generally to power attenuation) to big voltage signal according to reality; Reach safe or desirable level value; Make things convenient for test job; Especially the extensive present most of communication base stations of utilization all are that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component in radio frequency and microwave, and high-power ceramic carrier sheet can only merely consume the power of absorbing redundant, and can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time, and equipment is had protective effect.Attenuator is a kind of energy consumption element, becomes heat after the power consumption.Can imagine that after material structure was confirmed, the power capacity of attenuator had just been confirmed; If the power that lets attenuator bear surpasses the limiting value of design, attenuator will be burnt, so the design of material chosen and line construction; And the size of size, production technology is very big to the influence of power, market to environmental protection and compact in size require increasingly high; The beryllium oxide of use does not before meet environmental protection requirement as baseplate material.
The attenuation accuracy of the aluminium nitride ceramics attenuator of present domestic 30W-10dB can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
At present domestic 30W-10dB attenuator is because of the reason of design, and attenuation accuracy does not reach requirement, and the anti-high and low-temp impact property is poor, and after accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy can deflect away from the scope of actual requirement.
The utility model content
Deficiency to above-mentioned prior art; The technical problem that the utility model will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 10 ± 1dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires to satisfy the market actual demand, can satisfy 30 watts of 10dB attenuators of aluminium nitride ceramics substrate of the application requirements of present 3G network.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
30 watts of 10dB attenuators of a kind of aluminium nitride ceramics substrate, it comprises the aluminium nitride substrate of a 5*5*1MM, the back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance; Said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate, and the output of said attenuator circuit, input are connected with a pad respectively; Said two pads are symmetrical along the center line of said aluminium nitride substrate.This product is based on advanced person's thick-film technique production.
Preferably, be printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Technique scheme has following beneficial effect: 30 watts of 10dB attenuators of this aluminium nitride ceramics substrate are in a state of symmetry fully by attenuator circuit; Make the stability of circuit get a promotion; The client does not need painstakingly differentiation input and output in use simultaneously; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
Above-mentioned explanation only is the general introduction of the utility model technical scheme, in order more to know the technological means of understanding the utility model, and can implement according to the content of specification, below with the preferred embodiment of the utility model and conjunction with figs. specify as after.The embodiment of the utility model is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Describe in detail below in conjunction with the preferred embodiment of accompanying drawing to the utility model.
As shown in Figure 1; 30 watts of 10dB attenuators of this aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.All process steps is all based on advanced person's thick-film technique production.
It is 50 ± 1.5 Ω that 30 watts of 10dB attenuators of this aluminium nitride ceramics substrate require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output.
30 watts of 10dB attenuators of this aluminium nitride ceramics substrate with the aluminium nitride substrate of 5*5*1MM as substrate; Let attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, and two pads 5,6 all can be used as input or output; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
More than 30 watts of 10dB attenuators of a kind of aluminium nitride ceramics substrate that the utility model embodiment is provided carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the utility model embodiment, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as the restriction to the utility model, and all any changes of being made according to the utility model design philosophy are all within the protection range of the utility model.

Claims (5)

1. 30 watts of 10dB attenuators of an aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
2. 30 watts of 10dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: be printed with glass protection film on the said resistance.
3. 30 watts of 10dB attenuators of aluminium nitride ceramics substrate according to claim 1, it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
4. 30 watts of 10dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said attenuator circuit adopts T type circuit structure.
5. 30 watts of 10dB attenuators of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said silver slurry lead is connected through ground connection silver slurry with said conductor layer.
CN 201120335489 2011-09-08 2011-09-08 30Watt and 10dB attenuating plate of aluminum nitride ceramic substrate Expired - Fee Related CN202259631U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201120335489 CN202259631U (en) 2011-09-08 2011-09-08 30Watt and 10dB attenuating plate of aluminum nitride ceramic substrate

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Application Number Priority Date Filing Date Title
CN 201120335489 CN202259631U (en) 2011-09-08 2011-09-08 30Watt and 10dB attenuating plate of aluminum nitride ceramic substrate

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CN202259631U true CN202259631U (en) 2012-05-30

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361122A (en) * 2011-09-08 2012-02-22 苏州市新诚氏电子有限公司 30W-10dB attenuation plate of aluminium nitride ceramic substrate
CN102709634A (en) * 2012-06-28 2012-10-03 苏州市新诚氏电子有限公司 30-watt 17dB attenuation sheet of aluminum nitride ceramic substrate
CN102709643A (en) * 2012-06-28 2012-10-03 苏州市新诚氏电子有限公司 26dB attenuation sheet with power of 1 watt

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102361122A (en) * 2011-09-08 2012-02-22 苏州市新诚氏电子有限公司 30W-10dB attenuation plate of aluminium nitride ceramic substrate
CN102709634A (en) * 2012-06-28 2012-10-03 苏州市新诚氏电子有限公司 30-watt 17dB attenuation sheet of aluminum nitride ceramic substrate
CN102709643A (en) * 2012-06-28 2012-10-03 苏州市新诚氏电子有限公司 26dB attenuation sheet with power of 1 watt

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C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120530

Termination date: 20120908