CN102709649A - 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate - Google Patents
100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate Download PDFInfo
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- CN102709649A CN102709649A CN2012102166445A CN201210216644A CN102709649A CN 102709649 A CN102709649 A CN 102709649A CN 2012102166445 A CN2012102166445 A CN 2012102166445A CN 201210216644 A CN201210216644 A CN 201210216644A CN 102709649 A CN102709649 A CN 102709649A
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Abstract
The invention discloses a 100w 20dB attenuating plate with a large pad for an aluminum nitride ceramic substrate. The attenuating plate comprises an aluminum nitride substrate, wherein the back surface of the aluminum nitride substrate is printed with a conductor layer while the front surface of the aluminum nitride substrate is printed with a plurality of resistors and a silver paste wire, wherein the silver paste wire is connected with the resistors so as to form an attenuating circuit; and a glass protection film is printed on the resistors. The resistor area of the 100w 20dB attenuating plate with the large pad for the aluminum nitride ceramic substrate is increased, so that the property in resisting high-low temperature impact is enhanced and the performance index of the product is qualified; the attenuating plate has higher welding property and stronger welding strength than the current 100w 20dB attenuating plates in the market, due to the large pad design. Meanwhile, the resistors are protected from quenching injury of high temperature when the leads are welded on the output end, so as to avoid the risk that the resistors injured by quenching are likely to break in the practical use; the circuit design is improved and the product can be applied to 3G (third-generation) networks.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, 100 watts of 20dB attenuators of particularly a kind of large bonding pad aluminium nitride ceramics substrate.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.
Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time; Equipment there is protective effect; But the aluminium nitride ceramics attenuator of present domestic 100 watts of 20dB, its attenuation accuracy can only accomplish mostly that not only minority can be accomplished 2G in the 1G frequency; And the difficult control of the VSWR of attenuation accuracy and equipment configuration; Market is high to the requirement of attenuation accuracy, and when attenuation accuracy does not reach when requiring or VSWR does not reach when requiring, the signal that output obtains does not meet actual requirement.When frequency range is higher than 2G, domestic attenuator, its attenuation accuracy more will satisfy not requirement.
The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.The problems referred to above occurring mainly is because the design reasons of domestic 100 watts of 20dB attenuators; And the anti-high and low-temp impact property is poor; After accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy have deflected away from the scope of actual requirement, and the attenuation accuracy that so just makes has satisfied not requirement.
Summary of the invention
To the deficiency of above-mentioned prior art, it is high that the technical problem that the present invention will solve provides a kind of attenuation accuracy, 100 watts of 20dB attenuators of large bonding pad aluminium nitride ceramics substrate that can in the 3G frequency range, use.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
100 watts of 20dB attenuators of a kind of large bonding pad aluminium nitride ceramics substrate; It comprises an aluminium nitride substrate; The back up of said aluminium nitride substrate has conductor layer; The front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
Preferably, the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
Preferably, said conductor layer is formed by the printing of printed silver slurry.
Preferably, said attenuator circuit adopts the large bonding pad design that is prone to welding.
Preferably, said silver slurry lead is connected through the low-temperature silver slurry with said conductor layer.
Technique scheme has following beneficial effect: 100 watts of 20dB attenuators of this large bonding pad aluminium nitride ceramics substrate have increased resistor area; Increase pad; Make the anti-high and low-temp impact property of attenuator increase like this; Weldability convenience and intensity also obviously improve, and through optimizing circuit design, product performance index meets also and meets the requirements.Drawn back the distance of resistance and pad simultaneously, avoided when the output welding lead high temperature, avoided being quenched and hindered the risk that can break down in actual use because of resistance to the resistance wound of quenching.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the positive structural representation of the embodiment of the invention.
Fig. 2 is the structural representation at the embodiment of the invention back side.
Fig. 3 is the positive structural representation that is connected with the back side of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
Like Fig. 1, shown in 2,100 watts of 20dB attenuators of this large bonding pad aluminium nitride ceramics substrate comprise an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer 5, and conductor layer is formed by the printing of printed silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R 1, R2, R3, R4, R5 and silver slurry lead 2; Silver slurry lead 2 couples together the attenuator circuit that forms a TT type structure with resistance R 1, R2, R3, R4, R5; Resistance R 1, R2, R3, R4, the last glass protection film 3 that all is printed with of R5, glass protection film 3 is used for protective resistance R1, R2, R3, R4, R5.Upper surface at promptly silver-colored slurry lead 2 of entire circuit and glass protection film 3 also is printed with one deck black protective film 4, and black protective film 4 can comprise entire circuit, also can print brand and model on the black protective film 4.As shown in Figure 3, silver slurry lead 2 is connected through silver slurry 6 with conductor layer 5, and entire circuit gets final product conducting like this.
This impedance of shouting to coil 100 watts of 20dB attenuators of aluminium nitride ceramics substrate requirement input and ground connection is 50 ± 1.5 Ω, and the impedance of output and ground is 50 ± 1.5 Ω.Signal gets into attenuator from input, through resistance R 1, and R2, R5, R3, R4 make output export actual needed signal to the progressively absorption of power.
100 watts of 20dB attenuators of this large bonding pad aluminium nitride ceramics substrate have increased R3, R4 area, and make resistance R 3, R4 and output vacate a segment distance, make the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously, avoided being quenched and hindered the risk that can break down in actual use, improved the design of circuit because of resistance.
More than 100 watts of 20dB attenuators of a kind of large bonding pad aluminium nitride ceramics substrate that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (5)
1. 100 watts of 20dB attenuators of a large bonding pad aluminium nitride ceramics substrate; It is characterized in that: it comprises an aluminium nitride substrate; The back up of said aluminium nitride substrate has conductor layer; The front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
2. 100 watts of 20dB attenuators of large bonding pad aluminium nitride ceramics substrate according to claim 1 is characterized in that: the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
3. 100 watts of 20dB attenuators of large bonding pad aluminium nitride ceramics substrate according to claim 1 is characterized in that: said conductor layer is formed by the printing of printed silver slurry.
4. 100 watts of 20dB attenuators of large bonding pad aluminium nitride ceramics substrate according to claim 1 is characterized in that: said attenuator circuit adopts the large bonding pad design that is prone to welding.
5. 100 watts of 20dB attenuators of large bonding pad aluminium nitride ceramics substrate according to claim 1 is characterized in that: said silver slurry lead is connected through the silver slurry with said conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166445A CN102709649A (en) | 2012-06-28 | 2012-06-28 | 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102166445A CN102709649A (en) | 2012-06-28 | 2012-06-28 | 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate |
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| CN102709649A true CN102709649A (en) | 2012-10-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102166445A Pending CN102709649A (en) | 2012-06-28 | 2012-06-28 | 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218283A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | High-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator |
| CN104241775A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-dielectric-loss 10 W-30 dB attenuation slice |
| CN104241787A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Small 10 W 16 dB ceramic attenuation slice |
| CN104241776A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-25 dB attenuation slice |
| CN107799860A (en) * | 2017-10-24 | 2018-03-13 | 苏州市新诚氏通讯电子股份有限公司 | Aluminium nitride 30dB band pin coupling modules |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0940845A2 (en) * | 1998-03-02 | 1999-09-08 | Sumitomo Electric Industries, Ltd. | Susceptor for semiconductor manufacturing equipment and process for producing the same |
| CN102361141A (en) * | 2011-09-20 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 200W 30dB attenuation sheet of aluminum nitride ceramic substrate |
-
2012
- 2012-06-28 CN CN2012102166445A patent/CN102709649A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0940845A2 (en) * | 1998-03-02 | 1999-09-08 | Sumitomo Electric Industries, Ltd. | Susceptor for semiconductor manufacturing equipment and process for producing the same |
| CN102361141A (en) * | 2011-09-20 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 200W 30dB attenuation sheet of aluminum nitride ceramic substrate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218283A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | High-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator |
| CN104241775A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-dielectric-loss 10 W-30 dB attenuation slice |
| CN104241787A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Small 10 W 16 dB ceramic attenuation slice |
| CN104241776A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-25 dB attenuation slice |
| CN107799860A (en) * | 2017-10-24 | 2018-03-13 | 苏州市新诚氏通讯电子股份有限公司 | Aluminium nitride 30dB band pin coupling modules |
| CN107799860B (en) * | 2017-10-24 | 2023-08-15 | 苏州市新诚氏通讯电子股份有限公司 | Aluminum nitride 30dB coupling module with pins |
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Application publication date: 20121003 |