CN104218283A - High-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator - Google Patents
High-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator Download PDFInfo
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- CN104218283A CN104218283A CN201410231148.6A CN201410231148A CN104218283A CN 104218283 A CN104218283 A CN 104218283A CN 201410231148 A CN201410231148 A CN 201410231148A CN 104218283 A CN104218283 A CN 104218283A
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Abstract
The invention discloses a high-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator comprising an aluminum nitride ceramic substrate 5mm*2.5mm*0.635mm in dimensions. Sliver paste is printed to the back of the aluminum nitride ceramic substrate. Five resistors and an aluminum nitride sliver paste wire are printed on the front of the aluminum nitride ceramic substrate. Two ends of the aluminum nitride sliver paste wire are connected with two pads which are rectangular, respectively. The five resistors with the aluminum nitride sliver paste wire form an attenuation circuit. The size and resistance of the attenuation circuit are changed so as to acquire a required attenuation; attenuation precision and voltage standing wave ratio of the high-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator are increased by optimizing the circuit structural design; the high-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator has high service efficiency, high attenuation precision and small voltage standing wave ratio and meets the requirement for application in the existing 4G (fourth generation) network.
Description
Technical field
The present invention relates to a kind of aluminum nitride attenuation sheet, particularly a kind of high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator.
Background technology
At present integrated a plurality of membranaceous resistance is integrated, and the attenuator by resistance and circuit different designs is widely used in radar, satellite communication, the war industrys such as electronic countermeasures and mobile phone, PCS and commercial base station market segment.Components and parts indispensable in isolator, mixer, power amplifier; working load sheet can only merely consume and absorb unnecessary power; and use attenuator can also extract at the power that absorbs oppositely input the signal needing simultaneously, analyze; and on high-frequency circuit, adjust power level; decoupling, has played protective effect to relevant device.
Abroad, American-European countries particularly, attenuator and carrier sheet research and development are produced all Zao much than domestic starting, on the rich of product or product microwave property all in comparative advantages status.On domestic market, existing attenuator series is few simultaneously, and attenuation accuracy is low, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is to say, all mates with two terminal circuits.When attenuation accuracy or VSWR do not reach while requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 436.3 Ω ± 3%, in 3G frequency range, take interior attenuation accuracy as 1 ± 0.5dB, standing wave requires input, output in 1.2, can meet the high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator of the application requirements of current 4G network, replace same kind of products at abroad, and in characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator, comprise aluminium nitride ceramic substrate, aluminium nitride ceramic substrate is of a size of 5mm * 2.5mm * 0.635mm, the back up of aluminium nitride ceramic substrate has silver slurry, the front of aluminium nitride ceramic substrate is printed with 5 resistance and nitrogenize aluminum paste wire, silver slurry wire two ends connect respectively two rectangular pads, and 5 resistance between silver slurry wire form attenuator circuit.By changing size and the resistance value of resistance in attenuator circuit, obtain the pad value needing, by optimized circuit structural design, improved high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator attenuation accuracy and less standing-wave ratio.High-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator, frequency of utilization is high, attenuation accuracy is high, and standing-wave ratio is little, can reach the application requirements of current 4G network.
Preferably, described attenuator substrate adopts high-insulativity aluminum nitride ceramic substrate.
Preferably, the slurry of the silver in described circuit and resistance adopt low temperature co-fired technology.
Preferably, described circuit protection adopts high density resistance to chemical attack diaphragm.
Technique scheme has following beneficial effect: high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator, adopted high-insulativity aluminum nitride ceramic substrate, strengthened the properties of product stability under high power, silver slurry and resistance have adopted low temperature co-fired technology simultaneously, improved production efficiency and repeatedly sintering multi-product produce the Fengxian of injury, the optimal design of circuit structure has improved every microwave property of product, product performance index is improved, standing-wave ratio is less, when improving, microwave property met the power capacity requirement of product, the attenuation accuracy of this product has reached 3G with interior 1 ± 0.5dB, standing wave meets market demands, thereby make product can be applied to 4G network.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and coordinate accompanying drawing to be described in detail as follows.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator, comprise aluminium nitride ceramic substrate 1, the back up of aluminium nitride ceramic substrate 1 has silver slurry, the front of aluminium nitride ceramic substrate 1 is printed with silver slurry wire 2 and membranaceous resistance R 1, R2, R3, R4, R5, and membranaceous resistance R 1, R2, R3, R4, R5 starch wire by silver and are connected to form attenuator circuit, attenuator circuit is coated with silver slurry by end and is connected with back silver slurry layer, thereby makes attenuator circuit form path.This attenuator circuit is symmetrical along the center line of ceramic substrate; on membranaceous resistance R 1, R2, R3, R4, R5, be printed with greenism film 3; the upper surface of silver slurry wire 2 and greenism film 3 is also printed with one deck high density resistance to chemical attack diaphragm 4, can starch wire 2 and membranaceous resistance R 1, R2, R3 to silver like this, R4, R5 form protection.
It is 436.3 Ω ± 3% that high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator requires the resistance of input and ground connection, and the resistance of output and ground is 436.3 Ω ± 3%.Signal enters attenuator from input, through 5 membranaceous resistance R 1 of black, R2, R5, R3, the R4 progressively decay to power, from the actual needed signal of output output.
High-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator, adopted high-insulativity aluminum nitride ceramic substrate, strengthened the properties of product stability under high power, silver slurry and resistance have adopted low temperature co-fired technology simultaneously, improved production efficiency and repeatedly sintering multi-product produce the risk of injury, the optimal design of circuit structure has improved every microwave property of product, product performance index is improved, standing-wave ratio is less, when improving, microwave property met the power capacity requirement of product, the attenuation accuracy of this product has reached 3G with interior 1 ± 0.5dB, standing wave meets market demands, thereby make product can be applied to 4G network.
A kind of high-frequency high-precision aluminium nitride ceramics 10W-1dB the attenuator above embodiment of the present invention being provided is described in detail; for one of ordinary skill in the art; thought according to the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. a high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator, it is characterized in that: comprise aluminium nitride ceramic substrate, aluminium nitride ceramic substrate is of a size of 5mm * 2.5mm * 0.635mm, the back up of aluminium nitride ceramic substrate has silver slurry, the front of aluminium nitride ceramic substrate is printed with 5 resistance and nitrogenize aluminum paste wire, silver slurry wire two ends connect respectively two rectangular pads, and 5 resistance between silver slurry wire form attenuator circuit; By changing size and the resistance value of resistance in attenuator circuit, obtain the pad value needing, by optimized circuit structural design, improved high frequency aluminium nitride ceramics 10W-1dB attenuator attenuation accuracy and less standing-wave ratio; High-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator, frequency of utilization is high, attenuation accuracy is high, and standing-wave ratio is little, can reach the application requirements of current 4G network.
2. high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator according to claim 1, is characterized in that: described attenuator substrate adopts high-insulativity aluminum nitride ceramic substrate.
3. high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator according to claim 1, is characterized in that: silver slurry and resistance in described circuit adopt low temperature co-fired technology.
4. high-frequency high-precision aluminium nitride ceramics 10W-1dB attenuator according to claim 1, is characterized in that: described circuit protection adopts high density resistance to chemical attack diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410231148.6A CN104218283A (en) | 2014-05-28 | 2014-05-28 | High-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator |
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| CN201410231148.6A CN104218283A (en) | 2014-05-28 | 2014-05-28 | High-frequency high-precision aluminum nitride ceramic 10w 1dB attenuator |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709649A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate |
| CN102709631A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30W 13db aluminum nitride ceramic substrate attenuation slice |
| CN102738546A (en) * | 2012-06-29 | 2012-10-17 | 苏州市新诚氏电子有限公司 | 30-Watt 9dB attenuator |
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2014
- 2014-05-28 CN CN201410231148.6A patent/CN104218283A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709649A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate |
| CN102709631A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30W 13db aluminum nitride ceramic substrate attenuation slice |
| CN102738546A (en) * | 2012-06-29 | 2012-10-17 | 苏州市新诚氏电子有限公司 | 30-Watt 9dB attenuator |
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Application publication date: 20141217 |