CN104218291A - Low-expansion-factor aluminum-nitride 10W-28dB attenuation piece - Google Patents
Low-expansion-factor aluminum-nitride 10W-28dB attenuation piece Download PDFInfo
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- CN104218291A CN104218291A CN201410235141.1A CN201410235141A CN104218291A CN 104218291 A CN104218291 A CN 104218291A CN 201410235141 A CN201410235141 A CN 201410235141A CN 104218291 A CN104218291 A CN 104218291A
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Abstract
The invention discloses a low-expansion-factor aluminum-nitride 10W-28dB attenuation piece. The low-expansion-factor aluminum-nitride 10W-28dB attenuation piece comprises a high-conductivity low-expansion-factor aluminum-nitride substrate which is 5mm in length, 2.5mm in width and 1mm in thickness, special aluminum-nitride silver paste is printed on the back of aluminum nitride, a plurality of resistors and special aluminum-nitride silver paste leads are printed on the front side of the aluminum-nitride substrate, the silver paste leads are connected with five resistors to form a TT-type attenuation circuit, and a high-temperature sintering glass film is printed at the corresponding positions of the resistors. Required attenuation value is obtained by changing resistance and surface resistivity of the attenuation circuit, and better standing wave characteristics are obtained by the aid of the leads. The 10W-28dB attenuation piece with the high-power aluminum-nitride substrate is low in thermal expansion factor, so that high- and low-temperature impact resistance of the attenuation piece is improved and performance indexes of the attenuation piece conform to the requirements. Besides, the design of the circuit is improved, attenuation accuracy reaches 28+/-1dB within 3G (the third generation telecommunication), standing waves meet the market demands, and products can be applied to the 4G network.
Description
Technical field
The present invention relates to a kind of aluminum nitride attenuation sheet, particularly a kind of low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators.
Background technology
Be integrated with multiple membranaceous resistance to be at present integrated, be widely used in radar, satellite communication by the attenuator of resistance and circuit different designs, the war industrys such as electronic countermeasures and mobile phone, PCS and commercial base station market segment.Working load sheet merely can only consume and absorb unnecessary power; and the signal using attenuator can also extract needs at the power absorbing oppositely input is analyzed simultaneously; and on high-frequency circuit, adjust power level, decoupling, protective effect is served to relevant device.
Abroad, particularly American-European countries, to attenuator and carrier sheet development & production all Zao than domestic starting a lot, the rich of product or product microwave property are all in comparative advantages status.On domestic market, existing attenuator series is few simultaneously, and attenuation accuracy is low, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is, all mates with two terminal circuits.When attenuation accuracy or VSWR do not reach require time, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 50 Ω ± 3%, within 3G frequency range, attenuation accuracy is 28 ± 1dB, standing wave requires that input, output are within 1.15, the low-expansion coefficient aluminium nitride that the application that can meet current 4G network requires 10 watts of 28dB attenuators, replace same kind of products at abroad, and characteristically fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators, it is characterized in that: it comprises the high-thermal-conductivity low-expansibility coefficient aluminium nitride material substrate that is of a size of long 5mm, wide 2.5mm, thickness 1mm, the back up of aluminium nitride material has aluminium nitride dedicated silver paste, the front of aluminium nitride material substrate is printed with several resistance and aluminium nitride dedicated silver paste wire, silver slurry wire connects 5 resistance and forms TT type attenuator circuit, and one deck high temperature sintering glass-film is printed in 5 resistance relevant positions.Obtained the pad value of needs by the size and surface resistivity changing resistance in attenuator circuit, by the design of wire, obtain good stationary wave characteristic.
Preferably, described attenuator substrate adopts high-thermal-conductivity low-expansibility coefficient aluminium nitride material substrate.
Preferably, described decay circuit adopts the double T T-type of 5 electric resistance structures.
Technique scheme has following beneficial effect: low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators have employed low-expansion aluminium nitride ceramics, the anti-high and low-temp impact property of attenuator is made to increase like this, product performance index is met the requirements, improves the power of product.To avoid when output welding lead high temperature to quench wound to resistance simultaneously, avoid because resistance is by the risk of hindering and can break down in actual use of quenching, improve the design of circuit, attenuation accuracy is made to reach 28 ± 1dB within 3G, standing wave meets market demands, thus makes product can be applied to 4G network.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators, comprise the aluminium nitride material substrate 1 of a long 5.0mm, wide 2.5mm, thickness 1.0mm, the back up of aluminium nitride material substrate 1 has aluminium nitride dedicated silver paste, the front of aluminium nitride material substrate 1 is printed with aluminium nitride dedicated silver paste circuit 2 and membranaceous resistance R1, R2, R3, R4, R5, membranaceous resistance R1, R2, R3, R4, R5 are connected to form attenuator circuit by aluminium nitride dedicated silver paste wire, attenuator circuit is coated with silver slurry by end and is connected with back of the body conducting shell, thus makes attenuator circuit earth-continuity.This attenuator circuit is symmetrical along the center line of ceramic substrate; membranaceous resistance R1, R2, R3, R4, R5 are printed with high temperature sintering glass-film 3; the upper surface of aluminium nitride dedicated silver paste circuit 2 and high temperature sintering glass-film 3 is also printed with one deck resin protection film 4, can form protection like this to aluminium nitride dedicated silver paste circuit 2 and membranaceous resistance R1, R2, R3, R4, R5.
This low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators require that the resistance of input and ground connection is 50 Ω ± 3%, and the resistance of output and ground is 50 Ω ± 3%.Signal enters attenuator from input, through 5 black membranaceous resistance R1, R2, R5, R3, R4 to the progressively absorption of power, exports the signal required for reality from output.
This low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators have employed low-expansion aluminium nitride ceramics, make the anti-high and low-temp impact property of attenuator increase like this, product performance index are met the requirements, improves the power of product.To avoid when output welding lead high temperature to quench wound to resistance simultaneously, avoid because resistance is by the risk of hindering and can break down in actual use of quenching, improve the design of circuit, attenuation accuracy is made to reach 28 ± 1dB within 3G, standing wave meets market demands, thus makes product can be applied to 4G network.
Above a kind of low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators that the embodiment of the present invention provides are described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a low-expansion coefficient aluminium nitride 10 watts of 28dB attenuators, it is characterized in that: it comprises the high-thermal-conductivity low-expansibility coefficient aluminium nitride material substrate that is of a size of long 5mm, wide 2.5mm, thickness 1mm, the back up of aluminium nitride material has aluminium nitride dedicated silver paste, the front of aluminium nitride material substrate is printed with several resistance and aluminium nitride dedicated silver paste wire, silver slurry wire connects 5 resistance and forms TT type attenuator circuit, and one deck high temperature sintering glass-film is printed in 5 resistance relevant positions; Obtained the pad value of needs by the size and surface resistivity changing resistance in attenuator circuit, by the design of wire, obtain good stationary wave characteristic.
2. low-expansion coefficient aluminium nitride according to claim 1 10 watts of 28dB attenuators, is characterized in that: described attenuator substrate adopts high-thermal-conductivity low-expansibility coefficient aluminium nitride material substrate.
3. low-expansion coefficient aluminium nitride according to claim 1 10 watts of 28dB attenuators, is characterized in that: described decay circuit adopts the double T T-type of 5 electric resistance structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410235141.1A CN104218291A (en) | 2014-05-29 | 2014-05-29 | Low-expansion-factor aluminum-nitride 10W-28dB attenuation piece |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410235141.1A CN104218291A (en) | 2014-05-29 | 2014-05-29 | Low-expansion-factor aluminum-nitride 10W-28dB attenuation piece |
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| CN104218291A true CN104218291A (en) | 2014-12-17 |
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| CN201410235141.1A Pending CN104218291A (en) | 2014-05-29 | 2014-05-29 | Low-expansion-factor aluminum-nitride 10W-28dB attenuation piece |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN102709631A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30W 13db aluminum nitride ceramic substrate attenuation slice |
| CN102738546A (en) * | 2012-06-29 | 2012-10-17 | 苏州市新诚氏电子有限公司 | 30-Watt 9dB attenuator |
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2014
- 2014-05-29 CN CN201410235141.1A patent/CN104218291A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN102709631A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 30W 13db aluminum nitride ceramic substrate attenuation slice |
| CN102738546A (en) * | 2012-06-29 | 2012-10-17 | 苏州市新诚氏电子有限公司 | 30-Watt 9dB attenuator |
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Application publication date: 20141217 |