CN104218285A - Ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment - Google Patents
Ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment Download PDFInfo
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- CN104218285A CN104218285A CN201410231287.9A CN201410231287A CN104218285A CN 104218285 A CN104218285 A CN 104218285A CN 201410231287 A CN201410231287 A CN 201410231287A CN 104218285 A CN104218285 A CN 104218285A
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Abstract
The invention discloses a ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment. The ceramic 10W-5dB attenuator comprises an aluminum nitride ceramic substrate in a size of 5mm*2.5mm*1mm, sliver paste is printed on the back face of the aluminum nitride ceramic substrate, five resistors and aluminum nitride sliver paste wires are printed on the front face of the aluminum nitride ceramic substrate, two ends of each sliver paste wires are connected with two rectangular bonding pads respectively, and the five resistors between the sliver paste wires form an attenuation circuit. Required attenuation values are obtained by changing sizes and resistance values of the resistors in the attenuation circuit, higher attenuation precision and smaller standing-wave ratio of the high-stability ceramic 10W-5dB attenuator are realized by optimizing circuit structural design, stable RF (radio frequency) performance is achieved, and stability is guaranteed by functional resistance adjustment. The ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment has the advantages of high utilization frequency, high attenuation precision, small standing-wave ratio, stability in RF performance and capability of meeting current application requirements of the 4G network.
Description
Technical field
The present invention relates to a kind of ceramic attenuator sheet, particularly one realizes high stability pottery 10W-5dB attenuator by function resistance trimming.
Background technology
At present integrated multiple membranaceous resistance is integrated, and is widely used in radar, satellite communication, the war industrys such as electronic countermeasures and mobile phone, PCS and commercial base station market segment by the attenuator of resistance and circuit different designs.Components and parts indispensable in isolator, mixer, power amplifier; working load sheet can only merely consume and absorb unnecessary power; analyze and use attenuator can also extract at the power that absorbs oppositely input the signal needing simultaneously; and on high-frequency circuit, adjust power level; decoupling, has played protective effect to relevant device.
Abroad, particularly American-European countries, to attenuator and carrier sheet research and development produce all Zao much than domestic starting, on the rich of product or product microwave property all in comparative advantages status.On domestic market, existing attenuator series is few simultaneously, and attenuation accuracy is low, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is to say, all mates with two terminal circuits.In actual application, it is stable that every RF performance index keep, and when attenuation accuracy or VSWR do not reach while requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 96.2 Ω ± 3%, in 3G frequency range, attenuation accuracy is 5 ± 0.5dB, standing wave requires input, output in 1.2, can meet the high stability pottery 10W-5dB attenuator of the application requirements of current 4G network, replace same kind of products at abroad, and in characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high stability pottery 10W-5dB attenuator, it comprises aluminium nitride ceramic substrate, aluminium nitride ceramic substrate is of a size of 5mm × 2.5mm × 1mm, the back up of aluminium nitride ceramic substrate has silver slurry, the front of aluminium nitride ceramic substrate is printed with 5 resistance and nitrogenize aluminum paste wire, silver slurry wire two ends connect respectively two rectangular pads, and 5 resistance between silver slurry wire form attenuator circuit.
Preferably, the slurry of the silver in described circuit and resistance adopt low temperature co-fired technology.
Preferably, the wire in described circuit is formed by the printing of high-purity environment-friendly silver slurry.
Preferably, change original traditional resistance resistance trimming mode and use function resistance trimming mode.
Technique scheme has following beneficial effect: high stability pottery 10W-5dB attenuator, adopt aluminum nitride ceramic substrate, its high thermal conductivity characteristic has strengthened the properties of product stability under high power, silver slurry and resistance have adopted low temperature co-fired technology simultaneously, improved production efficiency and repeatedly sintering multi-product produce injury risk, the optimal design of circuit structure has improved every microwave property of product, product performance index is improved, standing-wave ratio is less, when improving, microwave property meets the power capacity requirement of product, the attenuation accuracy of this product has reached 3G with interior 5 ± 0.5dB, standing wave meets market demands, thereby make product can be applied to 4G network.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and coordinate accompanying drawing to be described in detail as follows.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, high stability pottery 10W-5dB attenuator, comprise aluminium nitride ceramic substrate 1, the back up of aluminium nitride ceramic substrate 1 has silver slurry, the front of aluminium nitride ceramic substrate 1 is printed with silver slurry wire 2 and membranaceous resistance R 1, R2, R3, R4, R5, and membranaceous resistance R 1, R2, R3, R4, R5 starch wire by silver and are connected to form attenuator circuit, attenuator circuit is coated with silver slurry by end and is connected with back silver slurry layer, thereby makes attenuator circuit form path.This attenuator circuit is along the center line symmetry of ceramic substrate; on membranaceous resistance R 1, R2, R3, R4, R5, be printed with glass protection film 3; the upper surface of silver slurry wire 2 and glass protection film 3 is also printed with one deck black protective film 4, can starch wire 2 and membranaceous resistance R 1, R2, R3 to silver like this, R4, R5 form protection.
It is 96.2 Ω ± 3% that high stability pottery 10W-5dB attenuator requires the resistance of input and ground connection, and the resistance of output and ground is 96.2 Ω ± 3%.Signal enters attenuator from input, through 5 membranaceous resistance R 1 of black, R2, R5, R3, the R4 progressively decay to power, from the actual needed signal of output output.
High stability pottery 10W-5dB attenuator, adopt aluminum nitride ceramic substrate, its high thermal conductivity characteristic has strengthened the properties of product stability under high power, silver slurry and resistance have adopted low temperature co-fired technology and new type functional resistance trimming mode simultaneously, improved production efficiency and repeatedly sintering multi-product produce injury risk, the optimal design of circuit structure has improved every microwave property of product, product performance index is improved, standing-wave ratio is less, when improving, microwave property meets the power capacity requirement of product, the attenuation accuracy of this product has reached 3G with interior 5 ± 0.5dB, standing wave meets market demands, thereby make product can be applied to 4G network.
A kind of high stability pottery 10W-5dB the attenuator above embodiment of the present invention being provided is described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. realize high stability pottery 10W-5dB attenuator by function resistance trimming for one kind, it is characterized in that: it comprises aluminium nitride ceramic substrate, aluminium nitride ceramic substrate is of a size of 5mm × 2.5mm × 1mm, the back up of aluminium nitride ceramic substrate has silver slurry, the front of aluminium nitride ceramic substrate is printed with 5 resistance and nitrogenize aluminum paste wire, silver slurry wire two ends connect respectively two rectangular pads, and 5 resistance between silver slurry wire form attenuator circuit.
2. according to claim 1ly realize high stability pottery 10W-5dB attenuator by function resistance trimming, it is characterized in that: silver slurry and resistance in described circuit adopt low temperature co-fired technology.
3. according to claim 1ly realize high stability pottery 10W-5dB attenuator by function resistance trimming, its feature in: the wire in described circuit is formed and is made technique by functional resistance trimming by the printing of high-purity environment-friendly silver slurry and completes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410231287.9A CN104218285A (en) | 2014-05-28 | 2014-05-28 | Ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410231287.9A CN104218285A (en) | 2014-05-28 | 2014-05-28 | Ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment |
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| CN104218285A true CN104218285A (en) | 2014-12-17 |
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| CN201410231287.9A Pending CN104218285A (en) | 2014-05-28 | 2014-05-28 | Ceramic 10W-5dB attenuator capable of realizing high stability by functional resistance adjustment |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
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- 2014-05-28 CN CN201410231287.9A patent/CN104218285A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
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Application publication date: 20141217 |