CN104241769A - High-frequency and high-stability 10-watt 20dB attenuation plate with aluminum nitride ceramic substrate - Google Patents
High-frequency and high-stability 10-watt 20dB attenuation plate with aluminum nitride ceramic substrate Download PDFInfo
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- CN104241769A CN104241769A CN201410234080.7A CN201410234080A CN104241769A CN 104241769 A CN104241769 A CN 104241769A CN 201410234080 A CN201410234080 A CN 201410234080A CN 104241769 A CN104241769 A CN 104241769A
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Abstract
The invention discloses a high-frequency and high-stability 10-watt 20dB attenuation plate with an aluminum nitride ceramic substrate. The high-frequency and high-stability 10-watt 20dB attenuation plate comprises the high-thermal-conductivity aluminum nitride ceramic substrate which is 5 mm long, 2.5 mm wide and 1 mm thick, the front face of the aluminum nitride ceramic substrate is printed with high-purity silver paste wires, the silver paste wires are connected through film-like resistors by means of high-temperature sintering, the back face of the aluminum nitride ceramic substrate is printed with a high-purity silver paste back conducting layer, and the wires on the front face are connected with the back conducting layer through low-temperature silver paste. According to the design of the attenuation plate, various performance indexes are fully considered, the high-frequency and noninductive purposes are achieved, the situation that original attenuation plates can only be applied to low frequency is broken, the application requirements of a current 3G network can be met, and all the indexes of the attenuation plate reach international advanced levels.
Description
Technical field
Invention relates to a kind of aluminium nitride ceramics attenuator, the particularly attenuator of a kind of high frequency high stability high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB.
Background technology
The attenuator being integrated with five membranaceous resistive arrangement is at present widely used in the apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.Merely can only consume at communication field working load sheet and absorb unnecessary power; and use attenuator at the power absorbing oppositely input; the signal can also collecting needs while protection circuit equipment is analyzed; and power level is adjusted on high-frequency circuit; decoupling, serves protective effect to relevant device.
Due to the external research and development to like product and manufacture than domestic start to walk Zao, especially to the technology contents such as attenuator comparatively high product be almost in monopolization, status that product line or product performance are all had the advantage.And existing attenuator attenuation accuracy is low on domestic market, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is, all mates with two terminal circuits.When attenuation accuracy or VSWR do not reach require time, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem that invention will solve is to provide a kind of impedance and meets 50 ± 1.5 Ω, within 3G frequency range, attenuation accuracy is 20 ± 0.5dB, standing wave requires that input, output are within 1.2, high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuators that the application that can meet current 3G network requires, replace same kind of products at abroad, and characteristically fill up the blank of home products.
For solving the problems of the technologies described above, invention adopts following technical scheme:
A kind of high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuators, comprise the aluminum nitride ceramic substrate of a long 5mm, wide 2.5mm, thickness 1.0mm, the front of described aluminum nitride ceramic substrate is printed with high-purity silver slurry wire, described silver slurry wire is communicated with by five membranaceous resistance by high temperature sintering, the back up of described aluminum nitride ceramic substrate has high-purity silver to starch back of the body conducting shell, is describedly just leading and is carrying on the back conducting and cross the conducting of low-temperature silver slurry.
Preferably, the membranaceous resistance of described high temperature sintering is printed with glass diaphragm.
Preferably, the upper surface of described wire and glass diaphragm is also printed with one deck black acid and alkali-resistance polymer film.
Technique scheme has following beneficial effect: this high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuator volumes are little, and material cost effectively reduces; Output is high, and production cost effectively reduces; Symmetric circuit designs, and frequency characteristic is good, and the stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, has made attenuator can be applied to the network of 3G.The production of the microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication can be widely used in.Expand the application band of domestic attenuator.
Above-mentioned explanation is only the general introduction of invention technical scheme, in order to better understand the technological means of invention, and can be implemented according to the content of specification, below with invention preferred embodiment and coordinate accompanying drawing to be described in detail as follows.The embodiment of invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of inventive embodiments.
Embodiment
Describe in detail below in conjunction with the preferred embodiment of accompanying drawing to invention.
As shown in Figure 1, this high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuators comprise the aluminum nitride ceramic substrate 1 of a long 5.0mm, wide 2.5mm, thickness 1.0mm, the back up of aluminium nitride substrate 1 has high-purity silver to starch back of the body conducting shell, the front of aluminium nitride substrate 1 is printed with high-purity silver slurry wire 2 and membranaceous resistance R1, R2, R3, R4, R5 membranaceous resistance R1, R2, R3, R4, R5 are connected to form attenuator circuit by wire, attenuator circuit is connected with back of the body conducting shell by low-temperature silver slurry, thus makes attenuator circuit earth-continuity.This attenuator circuit is symmetrical along the center line of aluminium nitride substrate; membranaceous resistance R1, R2, R3, R4, R5 are printed with glass diaphragm 3; the upper surface of wire 2 and glass diaphragm 3 is also printed with one deck black acid and alkali-resistance polymer film 4, can form protection like this to wire 2 and membranaceous resistance R1, R2, R3, R4, R5.
This high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuators require that the impedance of input and ground connection is 50 ± 1.5 Ω, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part enters attenuator, through membranaceous resistance R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuator volumes are little, and material cost effectively reduces; Output is high, and production cost effectively reduces; Symmetric circuit designs, and frequency characteristic is good, and the stability of circuit gets a promotion, and has broken the situation that original attenuator can only be applied to low frequency, has made attenuator can be applied to the network of 3G.The production of the microwave products such as apparatus field isolator, circulator such as Aeronautics and Astronautics, radar, radio station, broadcast communication can be widely used in.Expand the application band of domestic attenuator.
Above a kind of high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuators that inventive embodiments provides are described in detail; for one of ordinary skill in the art; according to the thought of inventive embodiments; all will change in specific embodiments and applications; in sum; this description should not be construed as the restriction to invention, and all any changes made according to invention design philosophy are all within the protection range of invention.
Claims (3)
1. a high frequency high stability aluminum nitride ceramic substrate 10 watts of 20dB attenuators, it is characterized in that: the aluminum nitride ceramic substrate comprising a long 5mm, wide 2.5mm, thickness 1mm, the front of described aluminum nitride ceramic substrate is printed with high-purity silver slurry wire, described silver slurry wire is communicated with by the membranaceous resistance of high temperature sintering, the back up of described aluminum nitride ceramic substrate has high-purity silver to starch back of the body conducting shell, is describedly just leading and is carrying on the back conducting and cross the conducting of low-temperature silver slurry.
2. high frequency high stability aluminum nitride ceramic substrate according to claim 1 10 watts of 20dB attenuators, is characterized in that: the membranaceous resistance of described high temperature sintering is printed with glass diaphragm.
3. high frequency high stability aluminum nitride ceramic substrate according to claim 1 10 watts of 20dB attenuators, is characterized in that: the upper surface of described wire and glass diaphragm is also printed with one deck black acid and alkali-resistance polymer film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234080.7A CN104241769A (en) | 2014-05-29 | 2014-05-29 | High-frequency and high-stability 10-watt 20dB attenuation plate with aluminum nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234080.7A CN104241769A (en) | 2014-05-29 | 2014-05-29 | High-frequency and high-stability 10-watt 20dB attenuation plate with aluminum nitride ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104241769A true CN104241769A (en) | 2014-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410234080.7A Pending CN104241769A (en) | 2014-05-29 | 2014-05-29 | High-frequency and high-stability 10-watt 20dB attenuation plate with aluminum nitride ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104241769A (en) |
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2014
- 2014-05-29 CN CN201410234080.7A patent/CN104241769A/en active Pending
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141224 |
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| WD01 | Invention patent application deemed withdrawn after publication |