CN104218282A - Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication - Google Patents
Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication Download PDFInfo
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- CN104218282A CN104218282A CN201410231128.9A CN201410231128A CN104218282A CN 104218282 A CN104218282 A CN 104218282A CN 201410231128 A CN201410231128 A CN 201410231128A CN 104218282 A CN104218282 A CN 104218282A
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Abstract
The invention discloses a thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting a requirement on 4G (fourth-generation) communication. The thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate comprises a low-heat-resistance aluminum nitride ceramic substrate, wherein the size of the aluminum nitride ceramic substrate is 5mm*2.5mm*1.0mm; silver paste is printed on a thick film on the back surface of the aluminum nitride ceramic substrate; five resistor and aluminum nitride ceramic silver paste wires are printed on a thick film of the front surface of the aluminum nitride ceramic substrate; five resistors are printed among the silver paste wires through thick films; the resistors and the silver paste wires form an attenuation circuit; a required attenuation value is obtained by changing the sizes of the resistors in the attenuation circuit and the resistance value of the attenuation circuit; the microwave performance of the thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate is improved by optimizing a circuit structure design; and the small standing-wave ratio and the high attenuation precision are obtained. The thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate is high in using frequency, high in attenuation precision and small in standing-wave ratio, meets the requirement on 4G communication and can be applied to the present 4G networks.
Description
Technical field
The present invention relates to a kind of aluminum nitride attenuation sheet, particularly a kind of 10 watts of 8dB attenuators of 4G communication need thick film circuit aluminium nitride ceramics that are suitable for.
Background technology
At present integrated multiple membranaceous resistance is integrated, and is widely used in radar, satellite communication, the war industrys such as electronic countermeasures and mobile phone, PCS and commercial base station market segment by the attenuator of resistance and circuit different designs.Working load sheet can only merely consume and absorb unnecessary power; analyze and use attenuator can also extract at the power that absorbs oppositely input the signal needing simultaneously; and on high-frequency circuit, adjust power level, decoupling, has played protective effect to relevant device.
Abroad, particularly American-European countries, to attenuator and carrier sheet research and development produce all Zao much than domestic starting, on the rich of product or product microwave property all in comparative advantages status.On domestic market, existing attenuator series is few simultaneously, and attenuation accuracy is low, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is to say, all mates with two terminal circuits.When attenuation accuracy or VSWR do not reach while requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 68.8 Ω ± 3%, in 3G frequency range, attenuation accuracy is 8 ± 0.5dB, standing wave requires input, output in 1.15, can meet 10 watts of 8dB attenuators of thick film circuit aluminium nitride ceramics of the application requirements of current 4G network, replace same kind of products at abroad, and in characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of 10 watts of 8dB attenuators of 4G communication need thick film circuit aluminium nitride ceramics that are suitable for, comprise a low thermal resistance aluminium nitride ceramic substrate, aluminium nitride ceramic substrate is of a size of 5mm × 2.5mm × 1.0mm, the back side thick film screen printing of aluminium nitride ceramic substrate has silver slurry, the front thick film screen printing of aluminium nitride ceramic substrate has 5 resistance and nitrogenize aluminum paste wire, between silver slurry wire, there are 5 resistance by thick film screen printing, resistance becomes attenuator circuit with silver slurry wire, obtain by the size and the resistance value that change resistance in attenuator circuit the pad value needing, the microwave property that has improved 10 watts of 8dB attenuators of thick film circuit aluminium nitride ceramics by optimized circuit structural design has obtained less standing-wave ratio and better attenuation accuracy.Be suitable for 10 watts of 8dB attenuators of 4G communication need thick film circuit aluminium nitride ceramics, frequency of utilization is high, attenuation accuracy is high, and standing-wave ratio is little, can reach the application requirements of current 4G network.
Preferably, described attenuator substrate adopts low thermal resistance aluminium nitride ceramic substrate.
Preferably, described attenuator circuit all adopts high-precision thick film screen printing technical point 9 road printings to form.
Preferably, described attenuator circuit adopts double shielding membrane technology.
Technique scheme has following beneficial effect: the application of low thermal resistance aluminium nitride ceramic substrate, increase the speed of its heat radiation, thereby improve its power capacity, obtain larger power in less size, realize the developing goal of components and parts miniaturizations, because of size decreases, unit are substrate can be produced more attenuator, has improved production efficiency simultaneously.The application of high accuracy thick film printing technology, has still obtained good guarantee even if carry out the consistency of 9 road print product performances, and the application of double shielding membrane technology has improved the stability of product microwave property.The circuit structure design of optimizing, improve attenuation accuracy, reduce standing-wave ratio, improve every microwave property of product, product performance index is improved, has met the power capacity requirement of product when microwave property improves, the attenuation accuracy of the product of changing products has reached 3G with interior 8 ± 0.5dB, standing wave meets market demands, thereby makes product can be applied to 4G network.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and coordinate accompanying drawing to be described in detail as follows.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1,10 watts of 8dB attenuators of this applicable 4G communication need thick film circuit aluminium nitride ceramics, comprise that one is of a size of the low thermal resistance aluminum nitride ceramic substrate 1 of 5mm × 2.5mm × 1.0mm, the back up of low thermal resistance aluminum nitride ceramic substrate 1 has silver slurry, the front of low thermal resistance aluminum nitride ceramic substrate 1 is printed with silver slurry wire 2 and membranaceous resistance R 1, R2, R3, R4, R5, membranaceous resistance R 1, R2, R3, R4, R5 starch wire by silver and are connected to form attenuator circuit, attenuator circuit is coated with silver slurry by end and is connected with back silver slurry layer, thereby makes attenuator circuit form path.This attenuator circuit is along the center line symmetry of ceramic substrate; on membranaceous resistance R 1, R2, R3, R4, R5, be printed with greenism film 3; the upper surface of silver slurry wire 2 and greenism film 3 is also printed with one deck resin protection film 4, can starch wire 2 and membranaceous resistance R 1, R2, R3 to silver like this, R4, R5 form protection.
This resistance that is suitable for 10 watts of 8dB attenuators requirement inputs of 4G communication need thick film circuit aluminium nitride ceramics and ground connection is 68.8 Ω ± 3%, and the resistance of output and ground is 68.8 Ω ± 3%.Signal enters attenuator from input, through 5 membranaceous resistance R 1 of black, R2, R5, R3, the R4 progressively absorption to power, from the actual needed signal of output output.
10 watts of 8dB attenuators of this applicable 4G communication need thick film circuit aluminium nitride ceramics, the application of low thermal resistance aluminium nitride ceramic substrate, increase the speed of its heat radiation, thereby improve its power capacity, obtain larger power in less size, realized the developing goal of components and parts miniaturizations, simultaneously because size decreases, unit are substrate can be produced more attenuator, has improved production efficiency.The application of high accuracy thick film printing technology, has still obtained good guarantee even if carry out the consistency of 9 road print product performances, and the application of double shielding membrane technology has improved the stability of product microwave property.The circuit structure design of optimizing, improve attenuation accuracy, reduce standing-wave ratio, improve every microwave property of product, product performance index is improved, has met the power capacity requirement of product when microwave property improves, the attenuation accuracy of this product has reached 3G with interior 8 ± 0.5dB, standing wave meets market demands, thereby makes product can be applied to 4G network.
The one above embodiment of the present invention being provided is suitable for 10 watts of 8dB attenuators of 4G communication need thick film circuit aluminium nitride ceramics and is described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. 10 watts of 8dB attenuators of an applicable 4G communication need thick film circuit aluminium nitride ceramics, it is characterized in that: comprise a low thermal resistance aluminium nitride ceramic substrate, aluminium nitride ceramic substrate is of a size of 5mm × 2.5mm × 1.0mm, the back side thick film screen printing of aluminium nitride ceramic substrate has silver slurry, the front thick film screen printing of aluminium nitride ceramic substrate has 5 resistance and nitrogenize aluminum paste wire, between silver slurry wire, there are 5 resistance by thick film screen printing, resistance becomes attenuator circuit with silver slurry wire, obtain by the size and the resistance value that change resistance in attenuator circuit the pad value needing, the microwave property that has improved 10 watts of 8dB attenuators of thick film circuit aluminium nitride ceramics by optimized circuit structural design has obtained less standing-wave ratio and better attenuation accuracy, 10 watts of 8dB attenuators of thick film circuit aluminium nitride ceramics, frequency of utilization is high, attenuation accuracy is high, and standing-wave ratio is little, can reach the application requirements of current 4G network.
2. 10 watts of 8dB attenuators of applicable 4G communication need thick film circuit aluminium nitride ceramics according to claim 1, is characterized in that: described attenuator substrate adopts low thermal resistance aluminium nitride ceramic substrate.
3. 10 watts of 8dB attenuators of applicable 4G communication need thick film circuit aluminium nitride ceramics according to claim 1, is characterized in that: described attenuator circuit all adopts high-precision thick film screen printing technical point 9 road printings to form.
4. 10 watts of 8dB attenuators of applicable 4G communication need thick film circuit aluminium nitride ceramics according to claim 1, is characterized in that: described attenuator circuit adopts double shielding membrane technology.
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| CN201410231128.9A CN104218282A (en) | 2014-05-28 | 2014-05-28 | Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113922029A (en) * | 2021-10-09 | 2022-01-11 | 苏州市新诚氏通讯电子股份有限公司 | Thin film microwave attenuation sheet based on ferrite |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361132A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate |
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- 2014-05-28 CN CN201410231128.9A patent/CN104218282A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361132A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113922029A (en) * | 2021-10-09 | 2022-01-11 | 苏州市新诚氏通讯电子股份有限公司 | Thin film microwave attenuation sheet based on ferrite |
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Application publication date: 20141217 |