CN104241770A - 8 dB attenuation piece with power capacity being 100 W - Google Patents
8 dB attenuation piece with power capacity being 100 W Download PDFInfo
- Publication number
- CN104241770A CN104241770A CN201410234282.1A CN201410234282A CN104241770A CN 104241770 A CN104241770 A CN 104241770A CN 201410234282 A CN201410234282 A CN 201410234282A CN 104241770 A CN104241770 A CN 104241770A
- Authority
- CN
- China
- Prior art keywords
- attenuator
- resistors
- silver paste
- aluminum nitride
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention discloses an 8 dB attenuation piece with power capacity being 100 W. The 8 dB attenuation piece comprises an 8.9 mm *5.7 mm *1 mm aluminum nitride ceramic substrate. A silver paste back conductor layer is printed on the back face of the aluminum nitride ceramic substrate. Silver paste wires and five black resistors are printed on the front face of the aluminum nitride ceramic substrate, the silver paste wires are connected with the resistors, an attenuator circuit is formed, the areas of the five black resistors are different in size according to different absorption powers, the five black resistors are formed by two times of silk-screen printing, and the back conductor layer and the silver paste wires are communicated through end grounding paste, wherein the end ground paste is silver paste. According to the attenuation piece, attenuation of absorption of the resistors to power from input to output is considered from the design thought, the areas of the resistors are defined, meanwhile, the moving direction of the silver paste wires is optimized, standing waves of the circuit are improved, and high-accuracy attenuation values are acquired by accurately correcting resistance values. The 8 dB attenuation piece with power capacity being 100 W has excellent indicators and meets the use requirements of an existing 4G network.
Description
Technical field
The present invention relates to a kind of power attenuation sheet, particularly a kind of power capacity is the 8dB attenuator of 100 watts.
Background technology
Current most of communication base station is all that utilizing high power ceramic load sheet is to absorb reverse input power in communication component; high-power ceramic carrier sheet merely can only consume and absorb unnecessary power; and real-time monitoring cannot be done to the working condition of base station; cannot judge in time when base station operation breaks down, protective effect is not had to equipment.And the power that attenuator not only oppositely can input in Absorbable rod communication component in communication base station, and part signal in communication component can be extracted, base station is monitored in real time, thus available protecting is formed to equipment.
Attenuator, as a power consumption component, can not have impact to two terminal circuits, and that is it all should mate with two terminal circuits.The aluminium nitride ceramics attenuator of current domestic 100W-8dB, its attenuation accuracy not only can only accomplish that within 1G frequency, minority can accomplish 2G mostly, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration, the signal that output obtains does not meet actual requirement.Particularly when attenuator uses frequency range higher than 2G, its attenuation accuracy does not often reach requirement, and return loss becomes large, can not meet the frequency range application requirement of more than 2G.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 68.9 ± 3% Ω, within 3G frequency range, attenuation accuracy is 8 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, and the power capacity that the application that can meet current 4G network requires is the 8dB attenuator of 100 watts.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
Comprise the aluminum nitride ceramic substrate of a 8.9*5.7*1MM, the back up of described aluminum nitride ceramic substrate has silver slurry back of the body conducting shell, the front of described aluminum nitride ceramic substrate is printed with silver slurry wire and 5 black resistance, described silver slurry wire connects described resistance and forms attenuator circuit, the area of described 5 black resistance is not of uniform size according to the difference of absorbed power, described 5 black resistance adopt twice silk screen printing to form, described back of the body conducting shell and described silver slurry wire adopt the conducting of end ground connection slurry, and described end ground connection slurry is silver slurry.
Preferably, described 5 black resistance are printed with unified temperature resistant transparent diaphragm.
Preferably, described attenuator circuit is printed with double shielding film.
Technique scheme has following beneficial effect: this attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, mentality of designing has taken into full account the Absorption of each resistance to power, the different resistor area according to the different designs of absorbed power, farthest optimize the power capacity of product, improve circuit structure simultaneously, improve the standing wave of circuit, and pass through the accurate amendment of resistance value, obtain high-precision pad value.This attenuator can arrive resistance 68.9 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, within 3G frequency range, attenuation accuracy is 8 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this power capacity is that the 8dB attenuator of 100 watts comprises an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer, and conductor layer forms by printing the printing of silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R1, R2, R3, R4, R5 and silver slurry wire 2; resistance R1, R2, R3, R4, R5 are coupled together formation attenuator circuit by silver slurry wire 2; resistance R1, R2, R3, R4, R5 are all printed with temperature resistant transparent diaphragm 3, and temperature resistant transparent diaphragm 3 is for the protection of resistance R1, R2, R3, R4, R5.Also be printed with layer protecting film 4 at the whole circuit i.e. upper surface of silver slurry wire 2 and temperature resistant transparent diaphragm 3, diaphragm 4 republished layer protecting film 5, can comprise whole circuit like this, diaphragm 5 also can print brand and model.
The resistance of this attenuator input and ground connection is 68.9 ± 3% Ω, and the resistance of output and ground is 68.9 ± 3% Ω.Signal enters attenuator from input, from output through R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, mentality of designing has taken into full account the Absorption of each resistance to power, the different resistor area according to the different designs of absorbed power, farthest optimize the power capacity of product, improve circuit structure simultaneously, improve the standing wave of circuit, and pass through the accurate amendment of resistance value, obtain high-precision pad value.This attenuator can arrive resistance 68.9 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, within 3G frequency range, attenuation accuracy is 8 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
A kind of power capacity provided the embodiment of the present invention is above that the 8dB attenuator of 100 watts is described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a power capacity is the 8dB attenuator of 100 watts, it is characterized in that: it comprises the aluminum nitride ceramic substrate of a 8.9*5.7*1MM, the back up of described aluminum nitride ceramic substrate has silver slurry back of the body conducting shell, the front of described aluminum nitride ceramic substrate is printed with silver slurry wire and 5 black resistance, described silver slurry wire connects described resistance and forms attenuator circuit, the area of described 5 black resistance is not of uniform size according to the difference of absorbed power, described 5 black resistance adopt twice silk screen printing to form, described back of the body conducting shell and described silver slurry wire adopt the conducting of end ground connection slurry, described end ground connection slurry is silver slurry.
2. power capacity according to claim 1 is the 8dB attenuator of 100 watts, it is characterized in that: described 5 black resistance are printed with unified temperature resistant transparent diaphragm.
3. power capacity according to claim 1 is the 8dB attenuator of 100 watts, it is characterized in that: described attenuator circuit is printed with double shielding film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234282.1A CN104241770A (en) | 2014-05-29 | 2014-05-29 | 8 dB attenuation piece with power capacity being 100 W |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234282.1A CN104241770A (en) | 2014-05-29 | 2014-05-29 | 8 dB attenuation piece with power capacity being 100 W |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104241770A true CN104241770A (en) | 2014-12-24 |
Family
ID=52229422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410234282.1A Pending CN104241770A (en) | 2014-05-29 | 2014-05-29 | 8 dB attenuation piece with power capacity being 100 W |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104241770A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767384A (en) * | 2018-08-30 | 2018-11-06 | 安徽禄讯电子科技有限公司 | A kind of high power ultra wide band diectric attenuation device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| US20130169386A1 (en) * | 2011-12-28 | 2013-07-04 | Sae Magnetics (H.K.) Ltd. | Attenuator |
| CN203950894U (en) * | 2014-05-29 | 2014-11-19 | 苏州市新诚氏电子有限公司 | Power capacity is the 8dB attenuator of 100 watts |
-
2014
- 2014-05-29 CN CN201410234282.1A patent/CN104241770A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| US20130169386A1 (en) * | 2011-12-28 | 2013-07-04 | Sae Magnetics (H.K.) Ltd. | Attenuator |
| CN203950894U (en) * | 2014-05-29 | 2014-11-19 | 苏州市新诚氏电子有限公司 | Power capacity is the 8dB attenuator of 100 watts |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767384A (en) * | 2018-08-30 | 2018-11-06 | 安徽禄讯电子科技有限公司 | A kind of high power ultra wide band diectric attenuation device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102290623A (en) | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate | |
| CN102332628A (en) | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate | |
| CN202121044U (en) | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice | |
| CN203950894U (en) | Power capacity is the 8dB attenuator of 100 watts | |
| CN104241770A (en) | 8 dB attenuation piece with power capacity being 100 W | |
| CN203950893U (en) | Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate | |
| CN202121043U (en) | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate | |
| CN102738546A (en) | 30-Watt 9dB attenuator | |
| CN102723554A (en) | 1-watt 5dB attenuation piece for aluminum oxide ceramic substrate | |
| CN104218289A (en) | 4dB attenuator with 100w power capacity | |
| CN203950896U (en) | Decay to 100 watts of aluminum nitride attenuation sheets of 24dB | |
| CN104241789A (en) | 1 dB attenuation piece with power capacity being 100 W | |
| CN104241771A (en) | High-power 100-watt 11dB attenuation plate with aluminum nitride ceramic substrate | |
| CN104241784A (en) | Aluminum nitride ceramic substrate 100 W-6 dB attenuation slice | |
| CN104218292A (en) | 2dB attenuator with 100w power capacity | |
| CN104241759A (en) | 100W-7dB attenuation slice | |
| CN104241761A (en) | Aluminum nitride ceramic substrate 100-W 3-dB attenuation piece meeting fourth-generation communication requirement | |
| CN102332630A (en) | Large-power 150-watt and 30-dB attenuation sheet for aluminum-nitride-ceramic substrate | |
| CN104241760A (en) | 12 dB attenuation piece with power being 100 W | |
| CN102361120A (en) | High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate | |
| CN104241765A (en) | High-precision 100-watt 23dB attenuation plate | |
| CN102709634A (en) | 30-watt 17dB attenuation sheet of aluminum nitride ceramic substrate | |
| CN104218282A (en) | Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication | |
| CN104241776A (en) | High-power aluminum nitride ceramic substrate 100 W-25 dB attenuation slice | |
| CN104218284A (en) | High-power aluminum-nitride 100W-21dB attenuation piece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141224 |
|
| WD01 | Invention patent application deemed withdrawn after publication |