CN104218289A - 4dB attenuator with 100w power capacity - Google Patents
4dB attenuator with 100w power capacity Download PDFInfo
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- CN104218289A CN104218289A CN201410234175.9A CN201410234175A CN104218289A CN 104218289 A CN104218289 A CN 104218289A CN 201410234175 A CN201410234175 A CN 201410234175A CN 104218289 A CN104218289 A CN 104218289A
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Abstract
The invention discloses a 4dB attenuator with a 100w power capacity. The attenuator comprises an aluminum nitride ceramic substrate 8.9mm in length, 5.7mm in width and 1.0mm in thickness. A silver paste back conduction layer is printed on the back of the aluminum nitride ceramic substrate. A sliver paste wire is printed on the front of the aluminum nitride ceramic substrate. The sliver paste wire is communicated with a whole circuit through black resistors printed. The areas of the black resistors are differed according to different absorbing powers. The black resistors are made by double silk-screen printing. The sliver paste back conduction layer and the sliver paste wire are communicated through end ground paste which is sliver paste. According to the design concept, the attenuator has the advantages that the fact that the attenuator attenuates power absorptions of the resistors from input to output is considered, the area of each resistor is defined, the trend of the sliver paste wire is optimized, standing wave of the circuit is improved, a precise attenuation is obtained by precisely correcting a resistance, indicators of the attenuator are all excellent, and the requirement for application in the existing 4G network is met.
Description
Technical field
The present invention relates to a kind of power attenuation sheet, particularly a kind of power capacity is the 4dB attenuator of 100 watts.
Background technology
Current most of communication base station is all that utilizing high power ceramic load sheet is to absorb reverse input power in communication component; high-power ceramic carrier sheet merely can only consume and absorb unnecessary power; and real-time monitoring cannot be done to the working condition of base station; cannot judge in time when base station operation breaks down, protective effect is not had to equipment.And the power that attenuator not only oppositely can input in Absorbable rod communication component in communication base station, and part signal in communication component can be extracted, base station is monitored in real time, thus available protecting is formed to equipment.
Attenuator, as a power consumption component, can not have impact to two terminal circuits, and that is it all should mate with two terminal circuits.The aluminium nitride ceramics attenuator of current domestic 100W-4dB, its attenuation accuracy not only can only accomplish that within 1G frequency, minority can accomplish 2G mostly, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration, the signal that output obtains does not meet actual requirement.Particularly when attenuator uses frequency range higher than 2G, its attenuation accuracy does not often reach requirement, and return loss becomes large, can not meet the frequency range application requirement of more than 2G.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 116.1 ± 3% Ω, within 3G frequency range, attenuation accuracy is 4 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, and the power capacity that the application that can meet current 4G network requires is the 4dB attenuator of 100 watts.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
It comprises an aluminium nitride ceramic substrate, described aluminium nitride chip is of a size of long 8.9mm, wide 5.7mm, thick 1.0mm, the back up of described aluminium nitride chip has silver slurry back of the body conducting shell, the front of described aluminum nitride ceramic substrate is printed with silver slurry wire, described silver slurry wire is communicated with whole circuit by printing 5 black resistance, the area of described 5 black resistance is not of uniform size according to the difference of absorbed power, described 5 black resistance adopt twice silk screen printing to form, described back of the body conducting shell and described silver slurry wire adopt the conducting of end ground connection slurry, and described end ground connection slurry is silver slurry.
Preferably, the resistance of described attenuator circuit forms by needing the resistance slurry printing of high temperature sintering.
Preferably, described silver slurry back of the body conducting shell is formed by the printing of high-purity silver slurry.
Technique scheme has following beneficial effect: this attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, mentality of designing has taken into full account the Absorption of each resistance to power, the different resistor area according to the different designs of absorbed power, farthest optimize the power capacity of product, improve circuit structure simultaneously, improve the standing wave of circuit, and pass through the accurate amendment of resistance value, obtain high-precision pad value.This attenuator can arrive resistance 116.1 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, within 3G frequency range, attenuation accuracy is 4 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this power capacity is that the 4dB attenuator of 100 watts comprises an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer, and conductor layer forms by printing the printing of silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R1, R2, R3, R4, R5 and silver slurry wire 2; silver is starched wire 2 and is coupled together formation attenuator circuit by resistance R1, R2, R3, R4, R5; resistance R1, R2, R3, R4, R5 are all printed with glass protection film 3, and glass protection film 3 is for the protection of resistance R1, R2, R3, R4, R5.Also be printed with layer protecting film 4 at the whole circuit i.e. upper surface of silver slurry wire 2 and glass protection film 3, diaphragm 4 republished layer protecting film 5, can comprise whole circuit like this, diaphragm 5 also can print brand and model.
The resistance of this attenuator input and ground connection is 116.1 ± 3% Ω, and the resistance of output and ground is 116.1 ± 3% Ω.Signal enters attenuator from input, from output through R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, mentality of designing has taken into full account the Absorption of each resistance to power, the different resistor area according to the different designs of absorbed power, farthest optimize the power capacity of product, improve circuit structure simultaneously, improve the standing wave of circuit, and pass through the accurate amendment of resistance value, obtain high-precision pad value.This attenuator can arrive resistance 116.1 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, within 3G frequency range, attenuation accuracy is 4 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
A kind of power capacity provided the embodiment of the present invention is above that the 4dB attenuator of 100 watts is described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a power capacity is the 4dB attenuator of 100 watts, it is characterized in that: it comprises an aluminium nitride ceramic substrate, described aluminium nitride chip is of a size of long 8.9mm, wide 5.7mm, thick 0.1mm, the back up of described aluminium nitride chip has silver slurry back of the body conducting shell, the front of described aluminum nitride ceramic substrate is printed with silver slurry wire, described silver slurry wire is communicated with whole circuit by printing 5 black resistance, the area of described 5 black resistance is not of uniform size according to the difference of absorbed power, described 5 black resistance adopt twice silk screen printing to form, described back of the body conducting shell and described silver slurry wire adopt the conducting of end ground connection slurry, described end ground connection slurry is silver slurry.
2. power capacity according to claim 1 is the 4dB attenuator of 100 watts, it is characterized in that: the resistance of described attenuator circuit forms by needing the resistance slurry printing of high temperature sintering.
3. power capacity according to claim 1 is the 4dB attenuator of 100 watts, it is characterized in that: described silver slurry back of the body conducting shell is starched printing by high-purity silver and formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234175.9A CN104218289A (en) | 2014-05-29 | 2014-05-29 | 4dB attenuator with 100w power capacity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410234175.9A CN104218289A (en) | 2014-05-29 | 2014-05-29 | 4dB attenuator with 100w power capacity |
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| CN104218289A true CN104218289A (en) | 2014-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410234175.9A Pending CN104218289A (en) | 2014-05-29 | 2014-05-29 | 4dB attenuator with 100w power capacity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113268912A (en) * | 2021-06-30 | 2021-08-17 | 中国计量科学研究院 | Design optimization method of distributed resistance attenuator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN102738548A (en) * | 2012-06-29 | 2012-10-17 | 苏州市新诚氏电子有限公司 | 30 watt 19dB attenuating piece with aluminum nitride ceramic substrate |
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2014
- 2014-05-29 CN CN201410234175.9A patent/CN104218289A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN102738548A (en) * | 2012-06-29 | 2012-10-17 | 苏州市新诚氏电子有限公司 | 30 watt 19dB attenuating piece with aluminum nitride ceramic substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113268912A (en) * | 2021-06-30 | 2021-08-17 | 中国计量科学研究院 | Design optimization method of distributed resistance attenuator |
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Application publication date: 20141217 |