CN102332628A - 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate - Google Patents
100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate Download PDFInfo
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- CN102332628A CN102332628A CN201110205641A CN201110205641A CN102332628A CN 102332628 A CN102332628 A CN 102332628A CN 201110205641 A CN201110205641 A CN 201110205641A CN 201110205641 A CN201110205641 A CN 201110205641A CN 102332628 A CN102332628 A CN 102332628A
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Abstract
The invention discloses a 100-watt 30dB high-power attenuator of an aluminum nitride ceramic substrate, comprising a 8.9*5.7*1MM aluminum nitride substrate, wherein the back of the aluminum nitride substrate is printed with a back guide layer, and the front of the aluminum nitride substrate is printed with a wire and a resistor; the wire is connected with the resistor to form an attenuator circuit; a glass protection film is printed on the resistor; a first black protection film is printed on the glass protection film and the wire; and a dielectric layer is printed on the first black protection film. In the attenuator, the dielectric layer is additionally printed on the first black protection film, so that the attenuation accuracy of the attenuator can be improved effectively, and the attenuator can meet application requirements of existing 3G networks and technical requirements on the power of 100 watts.
Description
Technical field
The present invention relates to a kind of high-power aluminium nitride ceramics substrate attenuator, the attenuator of 100 watts of 30dB of particularly a kind of high-power aluminium nitride ceramics substrate.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.And attenuator not only can absorb in the communication component power of reverse input in communication base station, and can extract part signal in the communication component, to monitoring in real time the base station, thereby equipment is formed effective protection.
Attenuator can not be influential to two terminal circuits as a power consumption component, that is to say that it should all mate with two terminal circuits.The aluminium nitride ceramics attenuator of present domestic 100W-30dB, its attenuation accuracy can only accomplish mostly that not only minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration, and the signal that output obtains does not meet actual requirement.Particularly when attenuator used frequency range to be higher than 2G, its attenuation accuracy did not often reach requirement, and it is big that return loss becomes, and had satisfied not the above frequency range application requirements of 2G.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 30 ± 1dB in the 3G frequency range with interior attenuation accuracy; It is in 1.2 that standing wave requires at 3G frequency range input, and output is in 1.25, can satisfy the application requirements of present 3G network and can bear the high-power aluminium nitride ceramics substrate attenuator of 100 watts power.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
100 watts of 30dB attenuators of a kind of high-power aluminium nitride ceramics substrate; It comprises the aluminium nitride substrate of a 8.9*5.7*1MM, and the back up of said aluminium nitride substrate has back of the body conducting shell, and the front of said aluminium nitride substrate is printed with lead and resistance; Said lead connects said resistance and forms attenuator circuit; Be printed with glass protection film on the said resistance, be printed with first black protective film on said glass protection film and the lead, be printed with a dielectric layer on said first black protective film.
Preferably, be printed with second black protective film on the said dielectric layer.
Preferably, said back of the body conducting shell, lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Technique scheme has following beneficial effect: this attenuator with the aluminium nitride substrate of 8.9*5.7*1MM as benchmark; On first black protective film, printed additional one deck dielectric layer; Can effectively improve the attenuation accuracy of attenuator like this, make this attenuator under the dimensions of above-mentioned aluminium nitride substrate, can arrive impedance 50 ± 1.5 Ω, be 30 ± 1dB in the 3G frequency range with interior attenuation accuracy; It is in 1.2 that standing wave requires at 3G frequency range input; Output is in 1.25, can satisfy the application requirements of present 3G network and the specification requirement that can bear 100 watts power, has broken the situation that original attenuator can only be applied to low frequency; Make attenuator can be applied to the network of 2G-3G, filled up the domestic blank that can not produce 100 watts of 30dB attenuators.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 100 watts of 30dB attenuators of this high-power aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 8.9*5.7*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, R4 and R5, and lead 2 connects above-mentioned resistance R 1, R2, R3, R4, R5 and forms attenuator circuit; The earth terminal of attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit conducting.Back of the body conducting shell, lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
R1, R2, R3, R4, R5 are printed with glass protection film 3 on resistance, are printed with on glass protection film 3 and the lead 2 on first black protective film, 4, the first black protective films 4 and are printed with a dielectric layer 5.Be printed with second black protective film on the dielectric layer 5, can print brand and model on second black protective film.First black protective film, second black protective film can play the effect of duplicate protection to attenuator circuit.
The impedance of this attenuator input and ground connection is 50 ± 1.5 Ω, and the impedance of output and ground is 50 ± 1.5 Ω.Signal gets into attenuator from input, through R1, R2, R5, R3, the R4 progressively absorption to power, exports actual needed signal from output from output.
This attenuator with the aluminium nitride substrate of 8.9*5.7*1MM as benchmark; On first black protective film, printed additional one deck dielectric layer; Can effectively improve the attenuation accuracy of attenuator like this, adopt this structure can increase resistance R 3 simultaneously, the resistor area of R4; Its anti-high and low-temp impact property is increased, and then avoided the risk that high temperature breaks down to the quenching wound of resistance when the output welding lead.Make this attenuator under the dimensions of above-mentioned aluminium nitride substrate, can arrive impedance 50 ± 1.5 Ω; Is 30 ± 1dB in the 3G frequency range with interior attenuation accuracy; It is in 1.2 that standing wave requires at 3G frequency range input; Output is in 1.25, can satisfy the application requirements of present 3G network and the specification requirement that can bear 100 watts power, has broken the situation that original attenuator can only be applied to low frequency; Make attenuator can be applied to the network of 2G-3G, filled up the domestic blank that can not produce 100 watts of 30dB attenuators.
More than 100 watts of 30dB attenuators of a kind of high-power aluminium nitride ceramics substrate that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 100 watts of 30dB attenuators of a high-power aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 8.9*5.7*1MM, and the back up of said aluminium nitride substrate has back of the body conducting shell, and the front of said aluminium nitride substrate is printed with lead and resistance; Said lead connects said resistance and forms attenuator circuit; Be printed with glass protection film on the said resistance, be printed with first black protective film on said glass protection film and the lead, be printed with a dielectric layer on said first black protective film.
2. 100 watts of 30dB attenuators of high-power aluminium nitride ceramics substrate according to claim 1 is characterized in that: be printed with second black protective film on the said dielectric layer.
3. 100 watts of 30dB attenuators of high-power aluminium nitride ceramics substrate according to claim 1, it is characterized in that: said back of the body conducting shell, lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110205641A CN102332628A (en) | 2011-07-22 | 2011-07-22 | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110205641A CN102332628A (en) | 2011-07-22 | 2011-07-22 | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate |
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| CN102332628A true CN102332628A (en) | 2012-01-25 |
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| CN201110205641A Pending CN102332628A (en) | 2011-07-22 | 2011-07-22 | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241779A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100 W-29 dB attenuation slice |
| CN104241788A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Hundred-watt aluminum nitride attenuation piece with attenuation being 24 dB |
| CN104241767A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 100W-13dB attenuation slice |
| CN104241761A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100-W 3-dB attenuation piece meeting fourth-generation communication requirement |
| CN104241776A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-25 dB attenuation slice |
| CN104241778A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100 W-26 dB attenuation slice |
| CN104241771A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power 100-watt 11dB attenuation plate with aluminum nitride ceramic substrate |
| CN104241765A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-precision 100-watt 23dB attenuation plate |
| CN104241775A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-dielectric-loss 10 W-30 dB attenuation slice |
| CN106711560A (en) * | 2016-11-24 | 2017-05-24 | 苏州市新诚氏电子有限公司 | 100W attenuation sheet of high-power aluminum nitride ceramic substrate, and production method thereof |
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| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202121044U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice |
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2011
- 2011-07-22 CN CN201110205641A patent/CN102332628A/en active Pending
Patent Citations (4)
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| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202121044U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241767A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 100W-13dB attenuation slice |
| CN104241761A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100-W 3-dB attenuation piece meeting fourth-generation communication requirement |
| CN104241765A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-precision 100-watt 23dB attenuation plate |
| CN104241779A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100 W-29 dB attenuation slice |
| CN104241788A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Hundred-watt aluminum nitride attenuation piece with attenuation being 24 dB |
| CN104241776A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power aluminum nitride ceramic substrate 100 W-25 dB attenuation slice |
| CN104241778A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100 W-26 dB attenuation slice |
| CN104241771A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-power 100-watt 11dB attenuation plate with aluminum nitride ceramic substrate |
| CN104241775A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Low-dielectric-loss 10 W-30 dB attenuation slice |
| CN106711560A (en) * | 2016-11-24 | 2017-05-24 | 苏州市新诚氏电子有限公司 | 100W attenuation sheet of high-power aluminum nitride ceramic substrate, and production method thereof |
| CN106711560B (en) * | 2016-11-24 | 2020-12-01 | 苏州市新诚氏通讯电子股份有限公司 | High-power aluminum nitride ceramic substrate 100W attenuation sheet and production method thereof |
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Application publication date: 20120125 |