CN202259626U - 100 W-10 dB attenuation sheet of high-power aluminum nitride ceramic substrate - Google Patents
100 W-10 dB attenuation sheet of high-power aluminum nitride ceramic substrate Download PDFInfo
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- CN202259626U CN202259626U CN 201120335390 CN201120335390U CN202259626U CN 202259626 U CN202259626 U CN 202259626U CN 201120335390 CN201120335390 CN 201120335390 CN 201120335390 U CN201120335390 U CN 201120335390U CN 202259626 U CN202259626 U CN 202259626U
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Abstract
The utility model discloses a 100 W-10 dB attenuation sheet of a high-power aluminum nitride ceramic substrate, comprising an aluminum nitride substrate, wherein a conductor layer is printed at the back side of the aluminum nitride substrate and a plurality of resistors and silver starch lead wires are printed at the front side of the aluminum nitride substrate; the silver starch lead wires are connected with the resistors to form an attenuation circuit and the resistors are printed with glass protection films. According to the 100 W-10 dB attenuation sheet of the high-power aluminum nitride ceramic substrate, the resistor area is enlarged so that the high-temperature and low-temperature impact resistance of the attenuation sheet is increased and the performance indexes of products meet the requirements. Meanwhile, the resistors are prevented from being quenched by high temperature when an output end is welded with a guide line and the risks of damaging the resistors by quenching are avoided in the actual use process, so that the deign of the circuit is improved, the attenuation precision can achieve in a range of 10+/-1 dB in 3G and standing waves meet market requirements; and therefore, the product can be applied to 3G (Third Generation) network.
Description
Technical field
The utility model relates to a kind of aluminium nitride ceramics attenuator, particularly a kind of high-power aluminium nitride ceramics substrate 100W-10dB attenuator.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.
Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time; Equipment there is protective effect, but the aluminium nitride ceramics attenuator of present domestic 100W-20dB, its attenuation accuracy not only can only be accomplished in the 1G frequency mostly; Minority can be accomplished 2G; And the difficult control of the VSWR of attenuation accuracy and equipment configuration, market to the requirement of attenuation accuracy than higher; When attenuation accuracy does not reach when requiring or VSWR does not reach when requiring, the signal that output obtains does not meet actual requirement.When frequency range is higher than 2G, domestic attenuator, its attenuation accuracy more will satisfy not requirement.
The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.The problems referred to above occurring mainly is the design reasons because of domestic 100W-10dB attenuator, and the anti-high and low-temp impact property is poor.After accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy have deflected away from the scope of actual requirement, and the attenuation accuracy that so just makes has satisfied not requirement.
The utility model content
To the deficiency of above-mentioned prior art, it is high that the technical problem that the utility model will solve provides a kind of attenuation accuracy, can in the 3G frequency range, use high-power aluminium nitride ceramics substrate 100W-10dB attenuator.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
A kind of high-power aluminium nitride ceramics substrate 100W-10dB attenuator; It comprises an aluminium nitride substrate; The back up of said aluminium nitride substrate has conductor layer; The front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
Preferably, the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
Preferably, said conductor layer is formed by the printing of printed silver slurry.
Preferably, said attenuator circuit adopts TT type circuit structure.
Preferably, said silver slurry lead is connected through the low-temperature silver slurry with said conductor layer.
Technique scheme has following beneficial effect: this high-power aluminium nitride ceramics substrate 100W-10dB attenuator has increased resistor area, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously; Avoided being hindered the risk to break down in actual use by quenching because of resistance; Improved the design of circuit; Make attenuation accuracy reach 3G with interior 10 ± 1dB, standing wave satisfies market demands, thereby makes product can be applied to 3G network.
Above-mentioned explanation only is the general introduction of the utility model technical scheme, in order more to know the technological means of understanding the utility model, and can implement according to the content of specification, below with the preferred embodiment of the utility model and conjunction with figs. specify as after.The embodiment of the utility model is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the positive structural representation of the utility model embodiment.
Fig. 2 is the structural representation at the utility model embodiment back side.
Fig. 3 is the positive structural representation that is connected with the back side of the utility model embodiment.
Embodiment
Describe in detail below in conjunction with the preferred embodiment of accompanying drawing to the utility model.
Like Fig. 1, shown in 2, this high-power aluminium nitride ceramics substrate 100W-10dB attenuator comprises an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer 5, and conductor layer is formed by the printing of printed silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R 1, R2, R3, R4, R5 and silver slurry lead 2; Silver slurry lead 2 couples together the attenuator circuit that forms a TT type structure with resistance R 1, R2, R3, R4, R5; Resistance R 1, R2, R3, R4, the last glass protection film 3 that all is printed with of R5, glass protection film 3 is used for protective resistance R1, R2, R3, R4, R5.Upper surface at promptly silver-colored slurry lead 2 of entire circuit and glass protection film 3 also is printed with one deck black protective film 4, and black protective film 4 can comprise entire circuit, also can print brand and model on the black protective film 4.As shown in Figure 3, silver slurry lead 2 is connected through ground connection silver slurry 6 with conductor layer 5, and entire circuit gets final product conducting like this.
It is 50 ± 1.5 Ω that this high-power aluminium nitride ceramics substrate 100W-10dB attenuator requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal gets into attenuator from input, through resistance R 1, and R2, R5, R3, R4 make output export actual needed signal to the progressively absorption of power.
This high-power aluminium nitride ceramics substrate 100W-10dB attenuator has increased R3, R4 area, and makes resistance R 3, R4 and output vacate a segment distance, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously; Avoided being hindered the risk to break down in actual use by quenching because of resistance; Improved the design of circuit, improved the design of circuit, made attenuation accuracy reach 3G with interior 10 ± 1dB; Standing wave satisfies market demands, thereby makes product can be applied to 3G network.
More than a kind of high-power aluminium nitride ceramics substrate 100W-10dB attenuator that the utility model embodiment is provided carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the utility model embodiment, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as the restriction to the utility model, and all any changes of being made according to the utility model design philosophy are all within the protection range of the utility model.
Claims (5)
1. high-power aluminium nitride ceramics substrate 100W-10dB attenuator, it is characterized in that: it comprises
One aluminium nitride substrate, the back up of said aluminium nitride substrate has conductor layer, and the front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
2. high-power aluminium nitride ceramics substrate 100W-10dB attenuator according to claim 1 is characterized in that: the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
3. high-power aluminium nitride ceramics substrate 100W-10dB attenuator according to claim 1 is characterized in that: said conductor layer is formed by the printing of printed silver slurry.
4. high-power aluminium nitride ceramics substrate 100W-10dB attenuator according to claim 1 is characterized in that: said attenuator circuit adopts TT type circuit structure.
5. high-power aluminium nitride ceramics substrate 100W-10dB attenuator according to claim 1 is characterized in that: said silver slurry lead is connected through ground connection silver slurry with said conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120335390 CN202259626U (en) | 2011-09-08 | 2011-09-08 | 100 W-10 dB attenuation sheet of high-power aluminum nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120335390 CN202259626U (en) | 2011-09-08 | 2011-09-08 | 100 W-10 dB attenuation sheet of high-power aluminum nitride ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202259626U true CN202259626U (en) | 2012-05-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120335390 Expired - Fee Related CN202259626U (en) | 2011-09-08 | 2011-09-08 | 100 W-10 dB attenuation sheet of high-power aluminum nitride ceramic substrate |
Country Status (1)
| Country | Link |
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| CN (1) | CN202259626U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361120A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate |
| CN104241781A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-precision 10-watt 9dB attenuation plate |
-
2011
- 2011-09-08 CN CN 201120335390 patent/CN202259626U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361120A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate |
| CN104241781A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | High-precision 10-watt 9dB attenuation plate |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20120908 |