CN102361132A - Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate - Google Patents
Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate Download PDFInfo
- Publication number
- CN102361132A CN102361132A CN2011102780979A CN201110278097A CN102361132A CN 102361132 A CN102361132 A CN 102361132A CN 2011102780979 A CN2011102780979 A CN 2011102780979A CN 201110278097 A CN201110278097 A CN 201110278097A CN 102361132 A CN102361132 A CN 102361132A
- Authority
- CN
- China
- Prior art keywords
- resistors
- attenuation
- aluminum nitride
- power
- printed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a large-power 100 W-9 dB attenuation sheet with an aluminum nitride ceramic substrate. The sheet comprises an aluminum nitride substrate, wherein a conductor layer is printed at the back side of the aluminum nitride substrate; a plurality of resistors and silver paste lead wires are printed at the front side of the aluminum nitride substrate; the silver paste lead wires are connected with the resistors to form an attenuation circuit; and glass protective films are printed on the resistors. The needed attenuation value is obtained by changing the size of resistance value and surface resistivity in the attenuation circuit and good stationary wave properties can be obtained through the design of the lead wires. According to the large-power 100 W-9 dB attenuation sheet with the aluminum nitride ceramic substrate provided by the invention, the area of the resistors is enlarged, the high and low temperature impact resistance of the attenuation sheet is increased and the performance indexes of products meet the requirements. Meanwhile, the quenching damages to the resistors at a high temperature when an output end is welded with the lead wires are avoided, the risk of damaging the resistors in the actual use process due to quenching the resistors is avoided, the design of the circuit is improved, the attenuation precision reaches 9+/-0.8 dB within 3 G (Gigabyte) and the standing wave satisfies the market demand, so that the products can be applied to 3G (The 3rd Generation Telecommunication) networks.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, particularly a kind of high-power aluminium nitride ceramics substrate 100W-9dB attenuator.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.
Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time; Equipment there is protective effect, but the aluminium nitride ceramics attenuator of present domestic 100W-9dB, its attenuation accuracy not only can only be accomplished in the 1G frequency mostly; Minority can be accomplished 2G; And the difficult control of the VSWR of attenuation accuracy and equipment configuration, market to the requirement of attenuation accuracy than higher; When attenuation accuracy does not reach when requiring or VSWR does not reach when requiring, the signal that output obtains does not meet actual requirement.When frequency range is higher than 2G, domestic attenuator, its attenuation accuracy more will satisfy not requirement.
The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.The problems referred to above occurring mainly is the design reasons because of domestic 100W-9dB attenuator, and the anti-high and low-temp impact property is poor.After accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy have deflected away from the scope of actual requirement, and the attenuation accuracy that so just makes has satisfied not requirement.
Summary of the invention
To the deficiency of above-mentioned prior art, it is high that the technical problem that the present invention will solve provides a kind of attenuation accuracy, can in the 3G frequency range, use high-power aluminium nitride ceramics substrate 100W-9dB attenuator.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high-power aluminium nitride ceramics substrate 100W-9dB attenuator; It comprises an aluminium nitride substrate; The back up of said aluminium nitride substrate has conductor layer; The front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
Preferably, the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
Preferably, said conductor layer is formed by the printing of printed silver slurry.
Preferably, said attenuator circuit adopts the pi-network structure.
Preferably, said silver slurry lead is connected through the low-temperature silver slurry with said conductor layer.
Technique scheme has following beneficial effect: this high-power aluminium nitride ceramics substrate 100W-9dB attenuator has increased resistor area, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously; Avoided being hindered the risk to break down in actual use by quenching because of resistance; Improved the design of circuit; Make attenuation accuracy reach 3G with interior 9 ± 0.8dB, standing wave satisfies market demands, thereby makes product can be applied to 3G network.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the positive structural representation of the embodiment of the invention.
Fig. 2 is the structural representation at the embodiment of the invention back side.
Fig. 3 is the positive structural representation that is connected with the back side of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
Like Fig. 1, shown in 2, this high-power aluminium nitride ceramics substrate 100W-9dB attenuator comprises an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer 5, and conductor layer is formed by the printing of printed silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R 1, R2, R3, R4, R5 and silver slurry lead 2; Silver slurry lead 2 couples together the attenuator circuit that forms a π type structure with resistance R 1, R2, R3, R4, R5; Resistance R 1, R2, R3, R4, the last glass protection film 3 that all is printed with of R5, glass protection film 3 is used for protective resistance R1, R2, R3, R4, R5.Upper surface at promptly silver-colored slurry lead 2 of entire circuit and glass protection film 3 also is printed with one deck black protective film 4, and black protective film 4 can comprise entire circuit, also can print brand and model on the black protective film 4.As shown in Figure 3, silver slurry lead 2 is connected through ground connection silver slurry 6 with conductor layer 5, and entire circuit gets final product conducting like this.
It is 50 ± 1.5 Ω that this high-power aluminium nitride ceramics substrate 100W-9dB attenuator requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal gets into attenuator from input, through resistance R 1, and R2, R5, R3, R4 make output export actual needed signal to the progressively absorption of power.
This high-power aluminium nitride ceramics substrate 100W-9dB attenuator has increased R3, R4 area, and makes resistance R 3, R4 and output vacate a segment distance, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously; Avoided being hindered the risk to break down in actual use by quenching because of resistance; Improved the design of circuit, improved the design of circuit, made attenuation accuracy reach 3G with interior 9 ± 0.8dB; Standing wave satisfies market demands, thereby makes product can be applied to 3G network.
More than a kind of high-power aluminium nitride ceramics substrate 100W-9dB attenuator that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (5)
1. high-power aluminium nitride ceramics substrate 100W-9dB attenuator; It is characterized in that: it comprises an aluminium nitride substrate; The back up of said aluminium nitride substrate has conductor layer; The front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
2. high-power aluminium nitride ceramics substrate 100W-9dB attenuator according to claim 1 is characterized in that: the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
3. high-power aluminium nitride ceramics substrate 100W-9dB attenuator according to claim 1 is characterized in that: said conductor layer is formed by the printing of printed silver slurry.
4. high-power aluminium nitride ceramics substrate 100W-9dB attenuator according to claim 1 is characterized in that: said attenuator circuit adopts the pi-network structure.
5. high-power aluminium nitride ceramics substrate 100W-9dB attenuator according to claim 1 is characterized in that: said silver slurry lead is connected through ground connection silver slurry with said conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102780979A CN102361132A (en) | 2011-09-16 | 2011-09-16 | Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102780979A CN102361132A (en) | 2011-09-16 | 2011-09-16 | Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102361132A true CN102361132A (en) | 2012-02-22 |
Family
ID=45586404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102780979A Pending CN102361132A (en) | 2011-09-16 | 2011-09-16 | Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102361132A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218287A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | High-thermal-conductivity aluminum nitride ceramic 10w 14dB attenuator |
| CN104218282A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication |
| CN104241784A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100 W-6 dB attenuation slice |
| CN104241774A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Pi-type high-frequency high-accuracy 10-watt 21 dB attenuation piece |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202259633U (en) * | 2011-09-16 | 2012-05-30 | 苏州市新诚氏电子有限公司 | 100W-9dB high-power aluminum nitride ceramic substrate attenuation sheet |
-
2011
- 2011-09-16 CN CN2011102780979A patent/CN102361132A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202259633U (en) * | 2011-09-16 | 2012-05-30 | 苏州市新诚氏电子有限公司 | 100W-9dB high-power aluminum nitride ceramic substrate attenuation sheet |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218287A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | High-thermal-conductivity aluminum nitride ceramic 10w 14dB attenuator |
| CN104218282A (en) * | 2014-05-28 | 2014-12-17 | 苏州市新诚氏电子有限公司 | Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication |
| CN104241784A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100 W-6 dB attenuation slice |
| CN104241774A (en) * | 2014-05-29 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Pi-type high-frequency high-accuracy 10-watt 21 dB attenuation piece |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102290623A (en) | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate | |
| CN102332628A (en) | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate | |
| CN102361123A (en) | 20W3dB attenuating piece of aluminium nitride ceramic substrate | |
| CN202121044U (en) | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice | |
| CN102361132A (en) | Large-power 100 W-9 dB attenuation sheet with aluminum nitride ceramic substrate | |
| CN102709649A (en) | 100w 20dB attenuating plate with large pad for aluminum nitride ceramic substrate | |
| CN102361125A (en) | 20W1dB attenuating piece of aluminium nitride ceramic substrate | |
| CN202259626U (en) | 100 W-10 dB attenuation sheet of high-power aluminum nitride ceramic substrate | |
| CN202121042U (en) | High-power aluminium nitride ceramic substrate 100W-20dB attenuator | |
| CN102361133A (en) | 20W and 2dB attenuator with aluminium nitride ceramic baseplate | |
| CN102361124A (en) | 30W3dB attenuating piece of aluminium nitride ceramic substrate | |
| CN102361140A (en) | 150W-20dB attenuator with high-power aluminium nitride ceramic baseplate | |
| CN202259633U (en) | 100W-9dB high-power aluminum nitride ceramic substrate attenuation sheet | |
| CN202259631U (en) | 30Watt and 10dB attenuating plate of aluminum nitride ceramic substrate | |
| CN102361120A (en) | High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate | |
| CN202121043U (en) | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate | |
| CN202259630U (en) | Aluminium nitride ceramic substrate based 20 watt 30 dB attenuator | |
| CN102738546A (en) | 30-Watt 9dB attenuator | |
| CN102332630A (en) | Large-power 150-watt and 30-dB attenuation sheet for aluminum-nitride-ceramic substrate | |
| CN203950896U (en) | Decay to 100 watts of aluminum nitride attenuation sheets of 24dB | |
| CN102723551A (en) | 30-watt 18dB attenuator for aluminum nitride ceramic substrate | |
| CN202121045U (en) | Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet | |
| CN202259636U (en) | 30W-20dB aluminum nitride ceramic substrate attenuation sheet | |
| CN203950893U (en) | Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate | |
| CN102361122A (en) | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120222 |