CN102361140A - 150W-20dB attenuator with high-power aluminium nitride ceramic baseplate - Google Patents
150W-20dB attenuator with high-power aluminium nitride ceramic baseplate Download PDFInfo
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- CN102361140A CN102361140A CN2011102790504A CN201110279050A CN102361140A CN 102361140 A CN102361140 A CN 102361140A CN 2011102790504 A CN2011102790504 A CN 2011102790504A CN 201110279050 A CN201110279050 A CN 201110279050A CN 102361140 A CN102361140 A CN 102361140A
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Abstract
The invention discloses a 150W-20dB attenuator with a high-power aluminium nitride ceramic baseplate. The attenuator comprises a 9.55*6.35*1mm aluminium nitride baseplate, wherein a conductor layer is printed at the back of the aluminium nitride baseplate; a plurality of resistors and silver pulp wires are printed on the front face of the aluminium nitride baseplate; and the silver pulp wires are connected with the resistors to form an attenuation circuit, and glass protecting films are printed on the resistors. By way of changing the size and surface resistivity of the resistor in the attenuation circuit, a required attenuation value can be obtained; and by means of design of the wire, better standing wave feature can be achieved. As the resistor area is enlarged, the 150w-20db attenuator with the high-power aluminium nitride ceramic baseplate has the advantages that the high and low temperature impact resisting property of the attenuator is enhanced, therefore product performance indexes are met; and meanwhile, hardening of the resistor caused by high temperature when a lead is welded at the output end is avoided, and the risk of damage in practical use arising from the hardening of the resistor is avoided, therefore design of the circuit is improved, such that precision of attenuation reaches 20+/-1dB within 3G, and standing waves can meet market requirements, and the product can be used in 3G (third generation) networks.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, particularly a kind of high-power aluminium nitride ceramics substrate 150W-20dB attenuator.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.
Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time; Equipment there is protective effect, but the aluminium nitride ceramics attenuator of present domestic 150W-20dB, its attenuation accuracy not only can only be accomplished in the 1G frequency mostly; Minority can be accomplished 2G; And the difficult control of the VSWR of attenuation accuracy and equipment configuration, market to the requirement of attenuation accuracy than higher; When attenuation accuracy does not reach when requiring or VSWR does not reach when requiring, the signal that output obtains does not meet actual requirement.When frequency range is higher than 2G, domestic attenuator, its attenuation accuracy more will satisfy not requirement.
The attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.The problems referred to above occurring mainly is the design reasons because of domestic 150W-20dB attenuator, and the anti-high and low-temp impact property is poor.After accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy have deflected away from the scope of actual requirement, and the attenuation accuracy that so just makes has satisfied not requirement.
Summary of the invention
To the deficiency of above-mentioned prior art, the technical problem that the present invention will solve provides a kind of 9.55*6.35*1mm of being of a size of, and attenuation accuracy is high, can in the 3G frequency range, use high-power aluminium nitride ceramics substrate 150W-20dB attenuator.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high-power aluminium nitride ceramics substrate 150W-20dB attenuator; It comprises a 9.55*6.35*1mm aluminium nitride substrate; The back up of said aluminium nitride substrate has conductor layer; The front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
Preferably, the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
Preferably, said conductor layer is formed by the printing of printed silver slurry.
Preferably, said attenuator circuit adopts the pi-network structure.
Preferably, said silver slurry lead is connected through the low-temperature silver slurry with said conductor layer.
Technique scheme has following beneficial effect: this high-power aluminium nitride ceramics substrate 150W-20dB attenuator has increased resistor area, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously; Avoided being hindered the risk to break down in actual use by quenching because of resistance; Improved the design of circuit; Make attenuation accuracy reach 3G with interior 20 ± 1dB, standing wave satisfies market demands, thereby makes product can be applied to 3G network.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the positive structural representation of the embodiment of the invention.
Fig. 2 is the structural representation at the embodiment of the invention back side.
Fig. 3 is the positive structural representation that is connected with the back side of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
Like Fig. 1, shown in 2, this high-power aluminium nitride ceramics substrate 150W-20dB attenuator comprises a 9.55*6.35*1mm aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer 5, and conductor layer is formed by the printing of printed silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R 1, R2, R3, R4, R5 and silver slurry lead 2; Silver slurry lead 2 couples together the attenuator circuit that forms a π type structure with resistance R 1, R2, R3, R4, R5; Resistance R 1, R2, R3, R4, the last glass protection film 3 that all is printed with of R5, glass protection film 3 is used for protective resistance R1, R2, R3, R4, R5.Upper surface at promptly silver-colored slurry lead 2 of entire circuit and glass protection film 3 also is printed with one deck black protective film 4, and black protective film 4 can comprise entire circuit, also can print brand and model on the black protective film 4.As shown in Figure 3, silver slurry lead 2 is connected through ground connection silver slurry 6 with conductor layer 5, and entire circuit gets final product conducting like this.
It is 50 ± 1.5 Ω that this high-power aluminium nitride ceramics substrate 150W-20dB attenuator requires the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal gets into attenuator from input, through resistance R 1, and R2, R5, R3, R4 make output export actual needed signal to the progressively absorption of power.
This high-power aluminium nitride ceramics substrate 150W-20dB attenuator has increased R3, R4 area, and makes resistance R 3, R4 and output vacate a segment distance, makes the anti-high and low-temp impact property of attenuator increase like this, and product performance index is met the requirements.Avoided when the output welding lead high temperature to the resistance wound of quenching simultaneously; Avoided being hindered the risk to break down in actual use by quenching because of resistance; Improved the design of circuit, improved the design of circuit, made attenuation accuracy reach 3G with interior 20 ± 1dB; Standing wave satisfies market demands, thereby makes product can be applied to 3G network.
More than a kind of high-power aluminium nitride ceramics substrate 150W-20dB attenuator that the embodiment of the invention provided has been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (5)
1. high-power aluminium nitride ceramics substrate 150W-20dB attenuator; It is characterized in that: it comprises a 9.55*6.35*1mm aluminium nitride substrate; The back up of said aluminium nitride substrate has conductor layer; The front of said aluminium nitride substrate is printed with several resistance and silver slurry lead, and said silver slurry lead connects said resistance and forms attenuator circuit, is printed with glass protection film on the said resistance.
2. high-power aluminium nitride ceramics substrate 150W-20dB attenuator according to claim 1 is characterized in that: the upper surface of said silver slurry lead and glass protection film also is printed with one deck black protective film.
3. high-power aluminium nitride ceramics substrate 150W-20dB attenuator according to claim 1 is characterized in that: said conductor layer is formed by the printing of printed silver slurry.
4. high-power aluminium nitride ceramics substrate 150W-20dB attenuator according to claim 1 is characterized in that: said attenuator circuit adopts the pi-network structure.
5. high-power aluminium nitride ceramics substrate 150W-20dB attenuator according to claim 1 is characterized in that: said silver slurry lead is connected through ground connection silver slurry with said conductor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102790504A CN102361140A (en) | 2011-09-20 | 2011-09-20 | 150W-20dB attenuator with high-power aluminium nitride ceramic baseplate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102790504A CN102361140A (en) | 2011-09-20 | 2011-09-20 | 150W-20dB attenuator with high-power aluminium nitride ceramic baseplate |
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| CN102361140A true CN102361140A (en) | 2012-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011102790504A Pending CN102361140A (en) | 2011-09-20 | 2011-09-20 | 150W-20dB attenuator with high-power aluminium nitride ceramic baseplate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241766A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 20 dB efficient attenuation piece with power being 2 W |
| CN106356598A (en) * | 2016-11-23 | 2017-01-25 | 苏州市新诚氏电子有限公司 | High-precision 150W attenuation slice and production method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
-
2011
- 2011-09-20 CN CN2011102790504A patent/CN102361140A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241766A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | 20 dB efficient attenuation piece with power being 2 W |
| CN106356598A (en) * | 2016-11-23 | 2017-01-25 | 苏州市新诚氏电子有限公司 | High-precision 150W attenuation slice and production method thereof |
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Application publication date: 20120222 |