CN203950893U - Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate - Google Patents
Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate Download PDFInfo
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- CN203950893U CN203950893U CN201420279892.9U CN201420279892U CN203950893U CN 203950893 U CN203950893 U CN 203950893U CN 201420279892 U CN201420279892 U CN 201420279892U CN 203950893 U CN203950893 U CN 203950893U
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- Prior art keywords
- ceramic substrate
- aluminum nitride
- nitride ceramic
- resistance
- watts
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- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 239000000919 ceramic Substances 0.000 title claims abstract description 23
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 21
- 238000004891 communication Methods 0.000 title claims abstract description 16
- 239000002002 slurry Substances 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Attenuators (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The utility model discloses a kind of meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate; it comprises that one is of a size of the aluminum nitride ceramic substrate of 8.9 × 5.7 × 1mm; the back up of described aluminum nitride ceramic substrate has silver slurry back of the body conducting shell; the front of described aluminum nitride ceramic substrate is printed with silver slurry wire and 5 black resistance; described silver slurry wire connects described resistance and forms π type attenuator circuit; on described 5 black resistance, homogeneous one correspondence is printed with glass diaphragm, on described glass diaphragm and silver slurry wire, is printed with double shielding film.This attenuator has been optimized the circuit structure of output in mentality of designing, has improved the standing wave of output, by the accurate amendment of resistance value, obtains high-precision pad value simultaneously.This aluminum nitride ceramic substrate 100 watts of 3dB attenuators, indices is good, met the 4th generation communication need and the instructions for use of 4G network at present.
Description
Technical field
The utility model relates to a kind of aluminum nitride ceramic substrate attenuator, particularly a kind of meet the 4th generation communication need the attenuator of 100 watts of 3dB of aluminum nitride ceramic substrate.
Background technology
Most communication base station is all that utilizing high power pottery carrier sheet absorbs reverse input power in communication component; high-power ceramic carrier sheet can only merely consume and absorb unnecessary power; and cannot do real-time monitoring to the working condition of base station; in the time that base station work is broken down, cannot judge in time, equipment is not had to protective effect.And attenuator not only can absorb the power of oppositely inputting in communication component in communication base station, and can extract part signal in communication component, to monitoring in real time base station, thereby equipment be formed to effective protection.
Attenuator, as a power consumption component, can not have impact to two terminal circuits, that is to say that it should all mate with two terminal circuits.The aluminium nitride ceramics attenuator of current domestic 100W-3dB, its attenuation accuracy not only can only accomplish that in 1G frequency, minority can be accomplished 2G mostly, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration, the signal that output obtains does not meet actual requirement.Particularly, in the time that attenuator uses frequency range higher than 2G, its attenuation accuracy does not often reach requirement, and it is large that return loss becomes, and can not meet frequency range application requirements more than 2G.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problems to be solved in the utility model is to provide a kind of resistance and meets 150.5 ± 3% Ω, in 3G frequency range, attenuation accuracy is 3 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, can meet current the 4th generation communication need, 4G network application requirements and can bear the attenuator of 100 watts of 3dB of aluminum nitride ceramic substrate of the power of 100 watts.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
It comprises that one is of a size of the aluminum nitride ceramic substrate of 8.9*5.7*1MM; the back up of described aluminum nitride ceramic substrate has silver slurry back of the body conducting shell; the front of described aluminum nitride ceramic substrate is printed with silver slurry wire and 5 black resistance; described silver slurry wire connects described resistance and forms π type attenuator circuit; on described 5 black resistance, homogeneous one correspondence is printed with glass diaphragm, on described glass diaphragm and silver slurry wire, is printed with double shielding film.
Preferably, described 5 black resistance adopt the once sintered technology of twice printing.
Preferably, described resistance adopts different surfaces resistivity resistance slurry mixed printing to form.
Technique scheme has following beneficial effect: this attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, in mentality of designing, optimize the circuit structure of output, improve the standing wave of output, by the accurate amendment of resistance value, obtained high-precision pad value simultaneously.This attenuator can arrive resistance 150.5 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, in 3G frequency range, attenuation accuracy is 3 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, can meet the application requirements of current 4G network and the technical requirement that can bear the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 4G.
Above-mentioned explanation is only the general introduction of technical solutions of the utility model, in order to better understand technological means of the present utility model, and can be implemented according to the content of specification, below with preferred embodiment of the present utility model and coordinate accompanying drawing to be described in detail as follows.Embodiment of the present utility model is provided in detail by following examples and accompanying drawing thereof.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail.
As shown in Figure 1, this meet the 4th generation communication need the attenuator of 100 watts of 3dB of aluminum nitride ceramic substrate comprise an aluminium nitride substrate 1, the back up of aluminium nitride substrate 1 has conductor layer, conductor layer is formed by the printing of printed silver slurry, the front of aluminium nitride substrate 1 is printed with resistance R 1, R2, R3, R4, R5 and silver slurry wire 2, silver slurry wire 2 is by resistance R 1, R2, R3, R4, R5 couples together and forms the attenuator circuit of π type structure, resistance R 1, R2, R3, R4, on R5, be all printed with glass diaphragm 3, glass diaphragm 3 is for the protection of resistance R 1, R2, R3, R4, R5.The upper surface that is silver slurry wire 2 and glass diaphragm 3 at whole circuit is also printed with one deck black protective film 4; on black protective film 4, republish one deck black protective film 5; can comprise whole circuit like this, on black protective film 5, also can print brand and model.
The resistance of this attenuator input and ground connection is 150.5 ± 3% Ω, and the resistance of output and ground is 150.5 ± 3% Ω.Signal enters attenuator from input, through R1, R2, R5, R3, the progressively absorption of R4 to power, exports actual needed signal from output from output.
This attenuator, using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, has been optimized the circuit structure of output in mentality of designing, has improved the standing wave of output, by the accurate amendment of resistance value, obtains high-precision pad value simultaneously.This attenuator can arrive resistance 150.5 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, in 3G frequency range, attenuation accuracy is 3 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, can meet the application requirements of current 4G network and the technical requirement that can bear the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 4G.
Above the utility model embodiment is provided a kind of meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate be described in detail; for one of ordinary skill in the art; according to the thought of the utility model embodiment; all will change in specific embodiments and applications; in sum; this description should not be construed as restriction of the present utility model, and all any changes of making according to the utility model design philosophy are all within protection range of the present utility model.
Claims (3)
- One kind meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate; it is characterized in that: it comprises that one is of a size of the aluminum nitride ceramic substrate of 8.9*5.7*1MM; the back up of described aluminum nitride ceramic substrate has silver slurry back of the body conducting shell; the front of described aluminum nitride ceramic substrate is printed with silver slurry wire and 5 black resistance; described silver slurry wire connects described resistance and forms π type attenuator circuit; on described 5 black resistance, homogeneous one correspondence is printed with glass diaphragm, on described glass diaphragm and silver slurry wire, is printed with double shielding film.
- According to claim 1 meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate, it is characterized in that: described 5 black resistance adopt the once sintered technology of twice printing.
- According to claim 1 meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate, it is characterized in that: described resistance adopts different surfaces resistivity resistance slurry mixed printing to form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420279892.9U CN203950893U (en) | 2014-05-28 | 2014-05-28 | Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420279892.9U CN203950893U (en) | 2014-05-28 | 2014-05-28 | Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203950893U true CN203950893U (en) | 2014-11-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420279892.9U Expired - Lifetime CN203950893U (en) | 2014-05-28 | 2014-05-28 | Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate |
Country Status (1)
| Country | Link |
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| CN (1) | CN203950893U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241761A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100-W 3-dB attenuation piece meeting fourth-generation communication requirement |
-
2014
- 2014-05-28 CN CN201420279892.9U patent/CN203950893U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241761A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100-W 3-dB attenuation piece meeting fourth-generation communication requirement |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215129 No. 369 factory building, 18 deer Road, Suzhou hi tech Zone, Jiangsu Patentee after: SUZHOU CITY, PRUDENTIAL'S ELECTRONICS CO.,LTD. Address before: 215129 No. 369 factory building, 18 deer Road, Suzhou hi tech Zone, Jiangsu Patentee before: SUZHOU NEW CHENGSHI ELECTRONIC Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141119 |