CN104241778A - Aluminum nitride ceramic substrate 100 W-26 dB attenuation slice - Google Patents
Aluminum nitride ceramic substrate 100 W-26 dB attenuation slice Download PDFInfo
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- CN104241778A CN104241778A CN201410235301.2A CN201410235301A CN104241778A CN 104241778 A CN104241778 A CN 104241778A CN 201410235301 A CN201410235301 A CN 201410235301A CN 104241778 A CN104241778 A CN 104241778A
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Abstract
The invention discloses an aluminum nitride ceramic substrate 100 W-26 dB attenuation slice. The attenuation slice comprises an aluminum nitride ceramic substrate which is 8.9 mm long, 5.7 mm wide and 1 mm thick. A conductor layer is printed on the back surface of the aluminum nitride substrate, a plurality of resistors and silver paste wires are printed on the front surface of the aluminum nitride substrate, the resistors are connected through the silver paste wires to form an attenuation circuit, glass protection films are printed on the resistors, black protection films are printed on the wires and the glass protection films, and a pair of symmetric bridge type dielectric layers are printed on each black protection film. According to the attenuation slice, the arrangement of the wires is optimized, and therefore low return loss is achieved; by the adjustment of the resistance value and the positions and the circuits of the bridge type dielectric layers, the accurate attenuation value is obtained. The power of the attenuation slice can meet the requirements of power capacity of 100 W, standing waves and the attenuation precision of the attenuation slice can meet the use requirements of 3G frequency bands, and therefore the aluminum nitride ceramic substrate 100 W-26 dB attenuation slice can be applied to present 4G networks.
Description
Technical field
The present invention relates to a kind of aluminum nitride ceramic substrate attenuator, particularly a kind of aluminum nitride ceramic substrate 100 watts of 26dB attenuators.
Background technology
Be integrated with multiple membranaceous resistance to be at present integrated, be widely used in the apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication by the attenuator of resistance and circuit different designs.Working load sheet merely can only consume and absorb unnecessary power; and the signal using attenuator can also extract needs at the power absorbing oppositely input is analyzed simultaneously; and on high-frequency circuit, adjust power level, decoupling, protective effect is served to relevant device.
Attenuator, as a power consumption component, can not have impact to two terminal circuits, and that is it all should mate with two terminal circuits.The aluminium nitride ceramics attenuator of current domestic 100W-26dB, its attenuation accuracy not only can only accomplish that within 1G frequency, minority can accomplish 2G mostly, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration, the signal that output obtains does not meet actual requirement.Particularly when attenuator uses frequency range higher than 2G, its attenuation accuracy does not often reach requirement, and return loss becomes large, can not meet the frequency range application requirement of more than 2G.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 50.3 ± 3% Ω, within 3G frequency range, attenuation accuracy is 26 ± 0.9dB, standing wave requires to meet 1.20:1max in 3G frequency range, and the application that can meet current 4G network requires and can bear aluminum nitride ceramic substrate 100 watts of 26dB attenuators of the power of 100 watts.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of aluminum nitride ceramic substrate 100 watts of 26dB attenuators; it comprises the aluminum nitride ceramic substrate of a long 8.9mm, wide 5.7mm, thickness 1mm; the back up of described aluminium nitride substrate has conductor layer; the front of described aluminium nitride substrate is printed with several resistance and silver slurry wire; described silver slurry wire contact resistance forms attenuator circuit; described resistance is printed with one deck glass protection film; described wire and glass protection film are printed with one deck black protective film, described black protective film are printed with a symmetrical bridge type dielectric layer.
Preferably, described attenuator circuit adopts bilateral grounding design.
Preferably, described black protective film is acid-alkali-corrosive-resisting resin protection film.
Technique scheme has following beneficial effect: this attenuator is with long 8.9mm, wide 5.7mm, the aluminium nitride substrate of thickness 1mm is as benchmark, whole attenuator circuit covers one deck epoxy protection film, epoxy protection film is printed with the symmetrical bridge type dielectric layer of one deck, symmetrical bridge type dielectric layer is printed with one deck acid and alkali-resistance black protective film, technology is finely tuned by medium, protect with double shielding film, while raising attenuation accuracy, improve the stability of attenuator, this attenuator can arrive resistance 50.3 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate, within 3G frequency range, attenuation accuracy is 26 ± 0.9dB, standing wave meets 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this aluminum nitride ceramic substrate 100 watts of 26dB attenuators comprise the aluminium nitride substrate 1 of a long 8.9mm, wide 5.7mm, thickness 1mm, the back up of aluminium nitride substrate 1 has silver slurry back of the body conducting shell, the front of aluminium nitride substrate 1 is printed with silver slurry wire 2 and resistance R1, R2, R3, R4 and R5, silver slurry wire 2 connects above-mentioned resistance R1, R2, R3, R4, R5 and forms attenuator circuit, attenuator circuit by end earthing mode conducting back of the body conducting shell and silver slurry wire, thus makes attenuator circuit conducting.
On resistance, R1, R2, R3, R4, R5 are printed with glass protection film 3, glass protection film 3 and silver slurry wire 2 are printed with epoxy protection film 4, epoxy protection film 4 are printed with the symmetrical bridge type dielectric layer 6 of a bridge.Symmetrical bridge type dielectric layer 6 is printed with low thermal coefficient of expansion diaphragm 5, low thermal coefficient of expansion diaphragm 5 can print brand and model.Epoxy protection film, low thermal coefficient of expansion diaphragm can play the effect of duplicate protection to attenuator circuit.
The resistance of this attenuator input and ground connection is 50.3 ± 3% Ω, and the resistance of output and ground is 50.3 ± 3% Ω.Signal enters attenuator from input, from output through R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This attenuator is with long 8.9mm, wide 5.7mm, the aluminium nitride substrate of thickness 1mm is as benchmark, whole attenuator circuit covers one deck epoxy protection film, epoxy protection film is printed with the symmetrical bridge type dielectric layer of one deck, symmetrical bridge type dielectric layer is printed with one deck acid and alkali-resistance black protective film, technology is finely tuned by medium, protect with double shielding film, while raising attenuation accuracy, improve the stability of attenuator, this attenuator can arrive resistance 50.3 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate, within 3G frequency range, attenuation accuracy is 26 ± 0.9dB, standing wave meets 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
Above a kind of aluminum nitride ceramic substrate 100 watts of 26dB attenuators that the embodiment of the present invention provides are described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. an aluminum nitride ceramic substrate 100 watts of 26B attenuators; it is characterized in that: it comprises the aluminum nitride ceramic substrate of a long 8.9mm, wide 5.7mm, thickness 1mm; the back up of described aluminium nitride substrate has conductor layer; the front of described aluminium nitride substrate is printed with several resistance and silver slurry wire; described silver slurry wire contact resistance forms attenuator circuit; described resistance is printed with one deck glass protection film; described wire and glass protection film are printed with one deck black protective film, described black protective film are printed with a symmetrical bridge type dielectric layer.
2. aluminum nitride ceramic substrate according to claim 1 100 watts of 26dB attenuators, is characterized in that: described attenuator circuit adopts bilateral grounding design.
3. high power aluminum nitride ceramic substrate according to claim 1 100 watts of 26dB attenuators, is characterized in that: described black protective film is acid-alkali-corrosive-resisting resin protection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410235301.2A CN104241778A (en) | 2014-05-29 | 2014-05-29 | Aluminum nitride ceramic substrate 100 W-26 dB attenuation slice |
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| CN201410235301.2A CN104241778A (en) | 2014-05-29 | 2014-05-29 | Aluminum nitride ceramic substrate 100 W-26 dB attenuation slice |
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| CN201410235301.2A Pending CN104241778A (en) | 2014-05-29 | 2014-05-29 | Aluminum nitride ceramic substrate 100 W-26 dB attenuation slice |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711560A (en) * | 2016-11-24 | 2017-05-24 | 苏州市新诚氏电子有限公司 | 100W attenuation sheet of high-power aluminum nitride ceramic substrate, and production method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102332628A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate |
-
2014
- 2014-05-29 CN CN201410235301.2A patent/CN104241778A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102332628A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711560A (en) * | 2016-11-24 | 2017-05-24 | 苏州市新诚氏电子有限公司 | 100W attenuation sheet of high-power aluminum nitride ceramic substrate, and production method thereof |
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Application publication date: 20141224 |