CN104218292A - 2dB attenuator with 100w power capacity - Google Patents
2dB attenuator with 100w power capacity Download PDFInfo
- Publication number
- CN104218292A CN104218292A CN201410235303.1A CN201410235303A CN104218292A CN 104218292 A CN104218292 A CN 104218292A CN 201410235303 A CN201410235303 A CN 201410235303A CN 104218292 A CN104218292 A CN 104218292A
- Authority
- CN
- China
- Prior art keywords
- attenuator
- wire
- printed
- power
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Attenuators (AREA)
- Thermistors And Varistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention discloses a 2dB attenuator with a 100w power capacity. The attenuator comprises an aluminum nitride ceramic substrate 8.9mm in length, 5.7mm in width and 0.1mm in thickness. A sliver paste back conduction layer is printed on the back of the aluminum nitride ceramic substrate. A sliver paste wire is printed on the front of the aluminum nitride ceramic substrate. The sliver paste wire is communicated with a whole circuit through five black resistors printed. The areas of the black resistors are differed according to difference in absorbing power. The black resistors are made by double silk-screen printing. The sliver paste back conduction layer and the sliver paste wire are communicated through end ground paste which is sliver paste. According to the design concept, the attenuator has the advantages that the fact that the attenuator attenuates power absorptions of the resistors from input to output is considered, the area of each resistor is defied, the trend of the sliver paste wire is optimized, standing wave of the circuit is improved, a precise attenuation is obtained by precisely correcting a resistance, indicators of the attenuator are all excellent, and the requirement for application in the existing 4G (fourth generation) network is met.
Description
Technical field
The present invention relates to a kind of power attenuation sheet, particularly a kind of power capacity is the 2dB attenuator of 100 watts.
Background technology
Current most of communication base station is all that utilizing high power ceramic load sheet is to absorb reverse input power in communication component; high-power ceramic carrier sheet merely can only consume and absorb unnecessary power; and real-time monitoring cannot be done to the working condition of base station; cannot judge in time when base station operation breaks down, protective effect is not had to equipment.And the power that attenuator not only oppositely can input in Absorbable rod communication component in communication base station, and part signal in communication component can be extracted, base station is monitored in real time, thus available protecting is formed to equipment.
Attenuator, as a power consumption component, can not have impact to two terminal circuits, and that is it all should mate with two terminal circuits.The aluminium nitride ceramics attenuator of current domestic 100W-2dB, its attenuation accuracy not only can only accomplish that within 1G frequency, minority can accomplish 2G mostly, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration, the signal that output obtains does not meet actual requirement.Particularly when attenuator uses frequency range higher than 2G, its attenuation accuracy does not often reach requirement, and return loss becomes large, can not meet the frequency range application requirement of more than 2G.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 221 ± 3% Ω, within 3G frequency range, attenuation accuracy is 2 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, and the power capacity that the application that can meet current 4G network requires is the 2dB attenuator of 100 watts.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
It comprises an aluminium nitride ceramic substrate, described aluminium nitride chip is of a size of long 8.9mm, wide 5.7mm, thick 0.1mm, the back up of described aluminium nitride chip has silver slurry back of the body conducting shell, the front of described aluminum nitride ceramic substrate is printed with silver slurry wire, described silver slurry wire is communicated with whole circuit by printing 5 black resistance, the area of described 5 black resistance is not of uniform size according to the difference of absorbed power, described 5 black resistance adopt twice silk screen printing to form, described back of the body conducting shell and described silver slurry wire adopt the conducting of end ground connection slurry, and described end ground connection slurry is silver slurry.
Preferably, described attenuator circuit needs to adopt the whole circuit of bilateral ground connection technique conducting.
Preferably, described 5 black resistance are printed with glass protection film.
Technique scheme has following beneficial effect: this attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, mentality of designing has taken into full account the Absorption of each resistance to power, the different resistor area according to the different designs of absorbed power, farthest optimize the power capacity of product, improve circuit structure simultaneously, improve the standing wave of circuit, and pass through the accurate amendment of resistance value, obtain high-precision pad value.This attenuator can arrive resistance 221 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, within 3G frequency range, attenuation accuracy is 2 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this power capacity is that the 2dB attenuator of 100 watts comprises an aluminium nitride substrate 1, and the back up of aluminium nitride substrate 1 has conductor layer, and conductor layer forms by printing the printing of silver slurry.The front of aluminium nitride substrate 1 is printed with resistance R1, R2, R3, R4, R5 and silver slurry wire 2; silver is starched wire 2 and is coupled together formation attenuator circuit by resistance R1, R2, R3, R4, R5; resistance R1, R2, R3, R4, R5 are all printed with glass protection film 3, and glass protection film 3 is for the protection of resistance R1, R2, R3, R4, R5.Also be printed with layer protecting film 4 at the whole circuit i.e. upper surface of silver slurry wire 2 and glass protection film 3, diaphragm 4 republished layer protecting film 5, can comprise whole circuit like this, diaphragm 5 also can print brand and model.
The resistance of this attenuator input and ground connection is 221 ± 3% Ω, and the resistance of output and ground is 221 ± 3% Ω.Signal enters attenuator from input, from output through R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark, mentality of designing has taken into full account the Absorption of each resistance to power, the different resistor area according to the different designs of absorbed power, farthest optimize the power capacity of product, improve circuit structure simultaneously, improve the standing wave of circuit, and pass through the accurate amendment of resistance value, obtain high-precision pad value.This attenuator can arrive resistance 221 ± 3% Ω under the dimensions of above-mentioned aluminium nitride substrate simultaneously, within 3G frequency range, attenuation accuracy is 8 ± 0.5dB, standing wave requires to meet 1.20:1max in 3G frequency range, the application that can meet current 4G network requires and can bear the technical requirement of the power of 100 watts, break the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 4G.
A kind of power capacity provided the embodiment of the present invention is above that the 2dB attenuator of 100 watts is described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a power capacity is the 2dB attenuator of 100 watts, it is characterized in that: it comprises an aluminium nitride ceramic substrate, described aluminium nitride chip is of a size of long 8.9mm, wide 5.7mm, thick 0.1mm, the back up of described aluminium nitride chip has silver slurry back of the body conducting shell, the front of described aluminum nitride ceramic substrate is printed with silver slurry wire, described silver slurry wire is communicated with whole circuit by printing 5 black resistance, the area of described 5 black resistance is not of uniform size according to the difference of absorbed power, described 5 black resistance adopt twice silk screen printing to form, described back of the body conducting shell and described silver slurry wire adopt the conducting of end ground connection slurry, described end ground connection slurry is silver slurry.
2. power capacity according to claim 1 is the 2dB attenuator of 100 watts, it is characterized in that: described attenuator circuit needs to adopt the whole circuit of bilateral ground connection technique conducting.
3. power capacity according to claim 1 is the 2dB attenuator of 100 watts, it is characterized in that: described 5 black resistance are printed with glass protection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410235303.1A CN104218292A (en) | 2014-05-29 | 2014-05-29 | 2dB attenuator with 100w power capacity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410235303.1A CN104218292A (en) | 2014-05-29 | 2014-05-29 | 2dB attenuator with 100w power capacity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104218292A true CN104218292A (en) | 2014-12-17 |
Family
ID=52099566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410235303.1A Pending CN104218292A (en) | 2014-05-29 | 2014-05-29 | 2dB attenuator with 100w power capacity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104218292A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
-
2014
- 2014-05-29 CN CN201410235303.1A patent/CN104218292A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102290623A (en) | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate | |
| CN102332628A (en) | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate | |
| CN202121044U (en) | Large power aluminum nitride ceramic substrate 100 watts 30 dB attenuation slice | |
| CN104218289A (en) | 4dB attenuator with 100w power capacity | |
| CN203950894U (en) | Power capacity is the 8dB attenuator of 100 watts | |
| CN203950893U (en) | Meet the 4th generation communication need 100 watts of 3dB attenuators of aluminum nitride ceramic substrate | |
| CN104241770A (en) | 8 dB attenuation piece with power capacity being 100 W | |
| CN203950896U (en) | Decay to 100 watts of aluminum nitride attenuation sheets of 24dB | |
| CN202121043U (en) | 150 tile 30 dB attenuation sheet of high power aluminum nitride ceramic substrate | |
| CN104218292A (en) | 2dB attenuator with 100w power capacity | |
| CN104241771A (en) | High-power 100-watt 11dB attenuation plate with aluminum nitride ceramic substrate | |
| CN104241784A (en) | Aluminum nitride ceramic substrate 100 W-6 dB attenuation slice | |
| CN104241760A (en) | 12 dB attenuation piece with power being 100 W | |
| CN104241789A (en) | 1 dB attenuation piece with power capacity being 100 W | |
| CN104241759A (en) | 100W-7dB attenuation slice | |
| CN104241761A (en) | Aluminum nitride ceramic substrate 100-W 3-dB attenuation piece meeting fourth-generation communication requirement | |
| CN102332630A (en) | Large-power 150-watt and 30-dB attenuation sheet for aluminum-nitride-ceramic substrate | |
| CN203950895U (en) | 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics | |
| CN104241767A (en) | 100W-13dB attenuation slice | |
| CN104241776A (en) | High-power aluminum nitride ceramic substrate 100 W-25 dB attenuation slice | |
| CN104241765A (en) | High-precision 100-watt 23dB attenuation plate | |
| CN104218282A (en) | Thick-film circuit aluminum nitride ceramic 10-watt 8dB attenuation plate meeting requirement on 4G (fourth-generation) communication | |
| CN104218288A (en) | Efficient stable 100w 5dB attenuator with aluminum oxide ceramic substrate | |
| CN104218284A (en) | High-power aluminum-nitride 100W-21dB attenuation piece | |
| CN102709634A (en) | 30-watt 17dB attenuation sheet of aluminum nitride ceramic substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141217 |