CN104241765A - High-precision 100-watt 23dB attenuation plate - Google Patents

High-precision 100-watt 23dB attenuation plate Download PDF

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Publication number
CN104241765A
CN104241765A CN201410231932.7A CN201410231932A CN104241765A CN 104241765 A CN104241765 A CN 104241765A CN 201410231932 A CN201410231932 A CN 201410231932A CN 104241765 A CN104241765 A CN 104241765A
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China
Prior art keywords
printed
precision
watt
attenuation plate
attenuation
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Pending
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CN201410231932.7A
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Chinese (zh)
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不公告发明人
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Suzhou New Chengshi Electronic Co Ltd
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Suzhou New Chengshi Electronic Co Ltd
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Priority to CN201410231932.7A priority Critical patent/CN104241765A/en
Publication of CN104241765A publication Critical patent/CN104241765A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a high-precision 100-watt 23dB attenuation plate. The high-precision 100-watt 23dB attenuation plate comprises an aluminum nitride substrate which is 8.9 mm long, 5.7 mm wide and 1 mm thick, a silver paste back conducting layer is printed on the back face of the aluminum nitride substrate, a silver paste wire and resistors are printed on the front face of the aluminum nitride substrate, the silver paste wire is connected with the resistors to form an attenuation circuit, the resistors are printed with a glass protecting film, the glass protecting film and the wire are printed with a first black protecting film, and the first black protecting film is printed with a dielectric layer. According to the attenuation plate, the dielectric layer is added to the first black protecting film, so the attenuation precision of the attenuation plate can be effectively improved. A substrate of a traditional 100-watt attenuation plate which is 8.9 mm long, 5.7 mm wide and 1 mm thick is made of beryllium oxide ceramic, and beryllium oxide is toxic and not environmentally friendly. The substrate of the high-precision 100-watt 23dB attenuation plate is made of aluminum nitride ceramic, so that the characteristics of the high-precision 100-watt 23dB attenuation plate meet the application requirements of a current 4G network and the requirement for high precision is met.

Description

High accuracy 100 watts of 23dB attenuators
Technical field
The present invention relates to a kind of attenuator, particularly a kind of high accuracy 100 watts of 23dB attenuators.
Background technology
Current most of communication base station is all that utilizing high power ceramic load sheet is to absorb reverse input power in communication component; high-power ceramic carrier sheet merely can only consume and absorb unnecessary power; and real-time monitoring cannot be done to the working condition of base station; cannot judge in time when base station operation breaks down, protective effect is not had to equipment.And the power that attenuator not only oppositely can input in Absorbable rod communication component in communication base station, and part signal in communication component can be extracted, base station is monitored in real time, thus available protecting is formed to equipment.
Attenuator, as a power consumption component, can not have impact to two terminal circuits, and that is it all should mate with two terminal circuits.The aluminium nitride ceramics attenuator of current domestic 100W-23dB, its attenuation accuracy not only can only accomplish that within 1G frequency, minority can accomplish 2G mostly, and the more difficult control of the VSWR of attenuation accuracy and equipment configuration, the signal that output obtains does not meet actual requirement.Particularly when attenuator uses frequency range higher than 2G, its attenuation accuracy does not often reach requirement, and return loss becomes large, can not meet the frequency range application requirement of more than 2G.And attenuator particularly 100W and the above high-power attenuator of current main flow, the good beryllium oxide ceramics of thermal conductivity of commonly using as substrate more, but beryllium oxide ceramics is poisonous, particularly can produce a large amount of beryllium oxide dust when resistance is debugged, can be in atmosphere floating, very large injury is caused to human body.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 50.5 ± 3% Ω, within 3G frequency range, attenuation accuracy is 23 ± 0.8dB, standing wave requires to meet 1.20:1max in 3G frequency range, and the application that can meet current 4G network requires and can bear high accuracy 100 watts of 23dB attenuators of 100 watts of power.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high accuracy 100 watts of 23dB attenuators; it comprises the aluminium nitride substrate of a 8.9*5.7*1MM; the back up of described aluminium nitride substrate has silver slurry back of the body conducting shell; the front of described aluminium nitride substrate is printed with silver slurry wire and resistance; described silver slurry wire connects described resistance and forms attenuator circuit; described resistance is printed with glass protection film, described glass protection film and wire are printed with the first black protective film, described first black protective film is printed with a dielectric layer.
Preferably, described silver slurry back of the body conducting shell and silver slurry wire need end ground connection to form attenuator circuit.
Preferably, described diaphragm is adopted and is formed by the printing of modified epoxy resin paste material.
Technique scheme has following beneficial effect: this attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark; first black protective film has printed additional one deck dielectric layer; effectively can improve the attenuation accuracy of attenuator like this; the aluminium nitride ceramics of environmental protection is adopted to substitute traditional beryllium oxide ceramics; meet power under same size condition while, reach the requirement of environmental protection.This attenuator, by the optimal design of circuit, improves the return loss of product, meets in 3G frequency range, and attenuation accuracy meets 23 ± 0.8dB, and input/output terminal return loss is all less than the demand that-20.83dB. meets current 4G network layout.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this high accuracy 100 watts of 23dB attenuators comprise the aluminium nitride substrate 1 of a 8.9*5.7*1MM, the back up of aluminium nitride substrate 1 has silver slurry back of the body conducting shell, the front of aluminium nitride substrate 1 is printed with silver slurry wire 2 and resistance R1, R2, R3, R4 and R5, silver slurry wire 2 connects above-mentioned resistance R1, R2, R3, R4, R5 and forms attenuator circuit, the earth terminal of attenuator circuit is electrically connected with back of the body conducting shell by silver slurry, thus makes attenuator circuit conducting.Back of the body conducting shell, wire form by needing the conductive silver paste printing of high temperature sintering, and described resistance is formed by resistance slurry printing.
On resistance, R1, R2, R3, R4, R5 are printed with glass protection film 3, and glass protection film 3 and silver slurry wire 2 are printed with on the first black protective film 4, first black protective film 4 and are printed with a dielectric layer 6.Dielectric layer 6 is printed with on the second black protective film 5, second black protective film 5 and can prints brand and model.First black protective film, the second black protective film can play the effect of duplicate protection to attenuator circuit.
The resistance of attenuator input and ground connection is 50.5 ± 3% Ω, and the resistance of output and ground is 50.5 ± 3% Ω.Signal enters attenuator from input, from output through R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This attenuator is using the aluminium nitride substrate of 8.9*5.7*1MM as benchmark; first black protective film has printed additional one deck dielectric layer; effectively can improve the attenuation accuracy of attenuator like this; the aluminium nitride ceramics of environmental protection is adopted to substitute traditional beryllium oxide ceramics; meet power under same size condition while, reach the requirement of environmental protection.This attenuator, by the optimal design of circuit, improves the return loss of product, meets in 3G frequency range, and attenuation accuracy meets 23 ± 0.8dB, and input/output terminal return loss is all less than the demand that-20.83dB. meets current 4G network layout.
Above a kind of high accuracy 100 watts of 23dB attenuators that the embodiment of the present invention provides are described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.

Claims (3)

1. a high accuracy 100 watts of 23dB attenuators; it is characterized in that: it comprises the aluminium nitride substrate of a 8.9*5.7*1MM; the back up of described aluminium nitride substrate has silver slurry back of the body conducting shell; the front of described aluminium nitride substrate is printed with silver slurry wire and resistance; described silver slurry wire connects described resistance and forms attenuator circuit; described resistance is printed with glass protection film, described glass protection film and wire are printed with the first black protective film, described first black protective film is printed with a dielectric layer.
2. high accuracy according to claim 1 100 watts of 23dB attenuators, is characterized in that: described silver slurry back of the body conducting shell and silver slurry wire need end ground connection to form attenuator circuit.
3. high accuracy according to claim 1 100 watts of 23dB attenuators, is characterized in that: described silver slurry back of the body conducting shell and silver slurry wire need end ground connection to form attenuator circuit.
CN201410231932.7A 2014-05-28 2014-05-28 High-precision 100-watt 23dB attenuation plate Pending CN104241765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410231932.7A CN104241765A (en) 2014-05-28 2014-05-28 High-precision 100-watt 23dB attenuation plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410231932.7A CN104241765A (en) 2014-05-28 2014-05-28 High-precision 100-watt 23dB attenuation plate

Publications (1)

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CN104241765A true CN104241765A (en) 2014-12-24

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CN201410231932.7A Pending CN104241765A (en) 2014-05-28 2014-05-28 High-precision 100-watt 23dB attenuation plate

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349792A (en) * 1978-07-14 1982-09-14 Kings Electronics Co., Inc. Pi pad attenuator
CN102332628A (en) * 2011-07-22 2012-01-25 苏州市新诚氏电子有限公司 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349792A (en) * 1978-07-14 1982-09-14 Kings Electronics Co., Inc. Pi pad attenuator
CN102332628A (en) * 2011-07-22 2012-01-25 苏州市新诚氏电子有限公司 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate

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