CN203950895U - 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics - Google Patents
10 watts of 18dB attenuators of high frequency aluminium nitride ceramics Download PDFInfo
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- CN203950895U CN203950895U CN201420282964.5U CN201420282964U CN203950895U CN 203950895 U CN203950895 U CN 203950895U CN 201420282964 U CN201420282964 U CN 201420282964U CN 203950895 U CN203950895 U CN 203950895U
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Abstract
The utility model discloses 10 watts of 18dB attenuators of a kind of high frequency aluminium nitride ceramics, it comprises a long 5mm, wide 2.5mm, the aluminum nitride ceramic substrate of thickness 1mm, the back up of described aluminum nitride ceramic substrate has back of the body conducting shell, the front of described aluminium nitride substrate is printed with wire and membranaceous resistance, described wire connects described resistance and forms typical π type attenuator circuit, described attenuator circuit is symmetrical along the cross central line of described aluminium nitride substrate, the output of described attenuator circuit, input is connected with a pad respectively, described two pads are symmetrical along the cross central line of described aluminium nitride substrate.In the design on record of this attenuator, the property indices such as VSWR, pad value, Insertion Loss have been taken into full account, high frequency is noninductive, broken the situation that original attenuator can only be applied to low frequency, can meet the application requirements of current 3G network, simultaneously for 4G network is got ready, and extended the series product line of 10 watts of fixed resistance formula attenuators.
Description
Technical field
The utility model relates to a kind of ceramic attenuator sheet, particularly 10 watts of 11dB attenuators of a kind of high frequency aluminium nitride ceramics.
Background technology
At present integrated a plurality of membranaceous resistance is integrated, and the attenuator by resistance and circuit different designs is widely used in the apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication.Working load sheet can only merely consume and absorb unnecessary power; and use attenuator can also extract at the power that absorbs oppositely input the signal needing simultaneously, analyze; and on high-frequency circuit, adjust power level, decoupling, has played protective effect to relevant device.
Abroad, American-European countries particularly, attenuator and carrier sheet research and development are produced all Zao much than domestic starting, on the rich of product or product microwave property all in comparative advantages status.On domestic market, existing attenuator series is few simultaneously, and attenuation accuracy is low, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is to say, all mates with two terminal circuits.When attenuation accuracy or VSWR do not reach while requiring, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problems to be solved in the utility model is to provide a kind of resistance and meets 51.6 Ω ± 3%, in 3G frequency range, take interior attenuation accuracy as 18 ± 0.8dB, standing wave requires input, output in 1.15, can meet 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics of the application requirements of current 3G network, replace same kind of products at abroad, and in characteristic, fill up the blank of home products.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
10 watts of 18dB attenuators of a kind of aluminium nitride ceramics high frequency, it is characterized in that: comprise a long 5mm, wide 2.5mm, the aluminum nitride ceramic substrate of thickness 1mm, the back up of described aluminum nitride ceramic substrate has back of the body conducting shell, the front of described aluminium nitride substrate is printed with wire and membranaceous resistance, described wire connects described resistance and forms typical π type attenuator circuit, described attenuator circuit is symmetrical along the cross central line of described aluminium nitride substrate, the output of described attenuator circuit, input is connected with a pad respectively, described two pads are symmetrical along the cross central line of described aluminium nitride substrate.
Preferably, described decay is electroplated along described aluminum nitride ceramic substrate center line symmetrical.
Preferably, described circuit substrate adopts high heat conduction aluminium nitride ceramics as substrate.
Technique scheme has following beneficial effect: 10 watts of 18dB attenuators of this high frequency aluminum nitride ceramic substrate are the state in a full symmetric by attenuator circuit, the stability of circuit is got a promotion, client does not need differentiation input and output deliberately in use simultaneously, greatly facilitate client, also reduce client and because input/output terminal welding is wrong, caused the generation of defective products to embody hommization fool-proof design aborning, and taken into account the indices of fixed resistance formula attenuator, increased power capacity, expanded the scope of product line, also broken the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 2G-3G, filled up domestic blank.The series product line of the value of differential declines has simultaneously expanded the scope of application, gives the multiple selection in market.
Above-mentioned explanation is only the general introduction of technical solutions of the utility model, in order to better understand technological means of the present utility model, and can be implemented according to the content of specification, below with preferred embodiment of the present utility model and coordinate accompanying drawing to be described in detail as follows.Embodiment of the present utility model is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail.
As shown in Figure 1,10 watts of 18dB attenuators of this high frequency aluminum nitride ceramic substrate comprise the ceramic substrate 1 of a long 5.0mm, wide 2.5mm, thickness 1.0mm, the back up of aluminium nitride substrate 1 has back of the body conducting shell, the front of aluminium nitride substrate 1 is printed with wire 2 and resistance R 1, R2, R3, R4, R5, resistance R 1, R2, R3, R4, R5 are connected to form attenuator circuit by wire, attenuator circuit is starched with back of the body conducting shell and is electrically connected to by silver, thereby makes attenuator circuit earth-continuity.On resistance R 1, R2, R3, R4, R5, be printed with glass protection film 3, the upper surface of wire 2 and glass protection film 3 is also printed with one deck black protective film 4, can form protection to wire 2 and resistance R 1, R2, R3, R4, R5 like this.
It is 51.6 Ω ± 3% that 10 watts of 18dB attenuators of this high frequency aluminum nitride ceramic substrate require the resistance of input and ground connection, and the resistance of output and ground is 51.6 Ω ± 3%.Signal input part enters attenuator, through membranaceous resistance R 1, R2, R5, R3, the R4 progressively absorption to power, from the actual needed signal of output output.
10 watts of 18dB attenuators of this high frequency aluminum nitride ceramic substrate are the state in a full symmetric by attenuator circuit, the stability of circuit is got a promotion, client does not need differentiation input and output deliberately in use simultaneously, greatly facilitate client, also reduce client and because input/output terminal welding is wrong, caused the generation of defective products to embody hommization fool-proof design aborning, and taken into account the indices of fixed resistance formula attenuator, increased power capacity, expanded the scope of product line, also broken the situation that original attenuator can only be applied to low frequency, make attenuator can be applied to the network of 2G-3G, filled up domestic blank.The series product line of the value of differential declines has simultaneously expanded the scope of application, gives the multiple selection in market.
The 10 watts of 18dB attenuators of a kind of high frequency aluminum nitride ceramic substrate that above the utility model embodiment provided are described in detail; for one of ordinary skill in the art; thought according to the utility model embodiment; all will change in specific embodiments and applications; in sum; this description should not be construed as restriction of the present utility model, and all any changes of making according to the utility model design philosophy are all within protection range of the present utility model.
Claims (3)
1. 10 watts of 18dB attenuators of a high frequency aluminium nitride ceramics, it is characterized in that: comprise a long 5mm, wide 2.5mm, the aluminum nitride ceramic substrate of thickness 1mm, the back up of described aluminum nitride ceramic substrate has back of the body conducting shell, the front of described aluminium nitride substrate is printed with wire and membranaceous resistance, described wire connects described resistance and forms typical π type attenuator circuit, described attenuator circuit is symmetrical along the cross central line of described aluminium nitride substrate, the output of described attenuator circuit, input is connected with a pad respectively, described two pads are symmetrical along the cross central line of described aluminium nitride substrate.
2. 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics according to claim 1, is characterized in that: described decay is electroplated along described aluminum nitride ceramic substrate center line symmetrical.
3. 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics according to claim 1, is characterized in that: described circuit substrate adopts high heat conduction aluminium nitride ceramics as substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201420282964.5U CN203950895U (en) | 2014-05-29 | 2014-05-29 | 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics |
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| CN201420282964.5U CN203950895U (en) | 2014-05-29 | 2014-05-29 | 10 watts of 18dB attenuators of high frequency aluminium nitride ceramics |
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| CN203950895U true CN203950895U (en) | 2014-11-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218293A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | High-frequency aluminum nitride 10w 18dB attenuator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218293A (en) * | 2014-05-29 | 2014-12-17 | 苏州市新诚氏电子有限公司 | High-frequency aluminum nitride 10w 18dB attenuator |
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Address after: 215129 No. 369 factory building, 18 deer Road, Suzhou hi tech Zone, Jiangsu Patentee after: Suzhou Xincheng communication electronic Limited by Share Ltd Address before: 215129 No. 369 factory building, 18 deer Road, Suzhou hi tech Zone, Jiangsu Patentee before: Suzhou NewChengShi Electronic Co., Ltd. |
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| CP01 | Change in the name or title of a patent holder |