CN104241773A - High-frequency aluminum nitride ceramic 10-watt 11dB attenuation plate - Google Patents
High-frequency aluminum nitride ceramic 10-watt 11dB attenuation plate Download PDFInfo
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- CN104241773A CN104241773A CN201410235150.0A CN201410235150A CN104241773A CN 104241773 A CN104241773 A CN 104241773A CN 201410235150 A CN201410235150 A CN 201410235150A CN 104241773 A CN104241773 A CN 104241773A
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- aluminum nitride
- nitride ceramic
- attenuation
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- aluminium nitride
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Abstract
The invention discloses a high-frequency aluminum nitride ceramic 10-watt 11dB attenuation plate. The high-frequency aluminum nitride ceramic 10-watt 11dB attenuation plate comprises an aluminum nitride ceramic substrate which is 5 mm long, 2.5 mm wide and 1 mm thick, the back face of the aluminum nitride ceramic substrate is printed with a back conducting layer, the front face of the aluminum nitride ceramic substrate is printed with a wire and film-like resistors, the wire is connected with the resistors to form a typical pi-type attenuation circuit, the attenuation circuit is symmetric about the transverse centerline of the aluminum nitride ceramic substrate, the output end and the input end of the attenuation circuit are respectively connected with a bonding pad, and the two bonding pads are symmetric about the transverse centerline of the aluminum nitride ceramic substrate. According to the design of the attenuation plate, various performance indexes such as a VSWR, an attenuation value and insertion losses are fully considered, the high-frequency and noninductive purposes are achieved, the situation that original attenuation plates can only be applied to low frequency is broken, the application requirements of a current 3G network can be met, meanwhile, preparations are made for a 4G network, and a series product line of 10-watt fixed resistor type attenuation plate is extended.
Description
Technical field
The present invention relates to a kind of ceramic attenuator sheet, particularly a kind of high frequency aluminium nitride ceramics 10 watts of 11dB attenuators.
Background technology
Be integrated with multiple membranaceous resistance to be at present integrated, be widely used in the apparatus field such as Aeronautics and Astronautics, radar, radio station, broadcast communication by the attenuator of resistance and circuit different designs.Working load sheet merely can only consume and absorb unnecessary power; and the signal using attenuator can also extract needs at the power absorbing oppositely input is analyzed simultaneously; and on high-frequency circuit, adjust power level, decoupling, protective effect is served to relevant device.
Abroad, particularly American-European countries, to attenuator and carrier sheet development & production all Zao than domestic starting a lot, the rich of product or product microwave property are all in comparative advantages status.On domestic market, existing attenuator series is few simultaneously, and attenuation accuracy is low, and the frequency range relative narrower that can use.The attenuator that we wish is a power consumption component, can not have impact to two terminal circuits, that is, all mates with two terminal circuits.When attenuation accuracy or VSWR do not reach require time, the signal that output obtains does not meet actual requirement.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of resistance and meets 58.6 Ω ± 3%, within 3G frequency range, attenuation accuracy is 11 ± 0.5dB, standing wave requires that input, output are within 1.15, the high frequency aluminium nitride ceramics that the application that can meet current 3G network requires 10 watts of 11dB attenuators, replace same kind of products at abroad, and characteristically fill up the blank of home products.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of high frequency aluminium nitride ceramics 10 watts of 11dB attenuators, it is characterized in that: comprise a long 5mm, wide 2.5mm, the aluminum nitride ceramic substrate of thickness 1mm, the back up of described aluminum nitride ceramic substrate has back of the body conducting shell, the front of described aluminium nitride substrate is printed with wire and membranaceous resistance, described wire connects described resistance and forms typical π type attenuator circuit, described attenuator circuit is symmetrical along the cross central line of described aluminium nitride substrate, the output of described attenuator circuit, input is connected with a pad respectively, described two pads are symmetrical along the cross central line of described aluminium nitride substrate.
Preferably, described attenuator circuit adopts the design of π type attenuator circuit.。
Preferably, described conductor layer is formed by the high temperature silver slurry printing containing glassy phase.
Technique scheme has following beneficial effect: this high frequency aluminum nitride ceramic substrate 10 watts of 11dB attenuators are in the state of a full symmetric by attenuator circuit, the stability of circuit is got a promotion, simultaneously client does not need differentiation input deliberately and output in use, greatly facilitate client, decrease client aborning because input/output terminal welding mistake causes the generation of defective products to embody hommization fool-proof design, and taken into account the indices of fixed resistance formula attenuator, add power capacity, expand the scope of product line, also the situation that original attenuator can only be applied to low frequency has been broken, make attenuator can be applied to the network of 2G-3G, fill up domestic blank.The series product line of the value of differential declines simultaneously expands the scope of application, to the selection that market is multiple.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this high frequency aluminum nitride ceramic substrate 10 watts of 11dB attenuators comprise the ceramic substrate 1 of a long 5.0mm, wide 2.5mm, thickness 1.0mm, the back up of aluminium nitride substrate 1 has back of the body conducting shell, the front of aluminium nitride substrate 1 is printed with wire 2 and resistance R1, R2, R3, R4, R5, resistance R1, R2, R3, R4, R5 are connected to form attenuator circuit by wire, attenuator circuit is electrically connected with back of the body conducting shell by silver slurry, thus makes attenuator circuit earth-continuity.Resistance R1, R2, R3, R4, R5 are printed with glass protection film 3, the upper surface of wire 2 and glass protection film 3 is also printed with one deck black protective film 4, can form protection like this to wire 2 and resistance R1, R2, R3, R4, R5.
This high frequency aluminum nitride ceramic substrate 10 watts of 11dB attenuators require that the resistance of input and ground connection is 58.6 Ω ± 3%, and the resistance of output and ground is 58.6 Ω ± 3%.Signal input part enters attenuator, through membranaceous resistance R1, R2, R5, R3, R4 progressively absorption to power, exports the signal required for reality from output.
This high frequency aluminum nitride ceramic substrate 10 watts of 11dB attenuators are in the state of a full symmetric by attenuator circuit, the stability of circuit is got a promotion, simultaneously client does not need differentiation input deliberately and output in use, greatly facilitate client, decrease client aborning because input/output terminal welding mistake causes the generation of defective products to embody hommization fool-proof design, and taken into account the indices of fixed resistance formula attenuator, add power capacity, expand the scope of product line, also the situation that original attenuator can only be applied to low frequency has been broken, make attenuator can be applied to the network of 2G-3G, fill up domestic blank.The series product line of the value of differential declines simultaneously expands the scope of application, to the selection that market is multiple.
Above a kind of high frequency aluminum nitride ceramic substrate 10 watts of 11dB attenuators that the embodiment of the present invention provides are described in detail; for one of ordinary skill in the art; according to the thought of the embodiment of the present invention; all will change in specific embodiments and applications; in sum; this description should not be construed as limitation of the present invention, and all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. a high frequency aluminium nitride ceramics 10 watts of 11dB attenuators, it is characterized in that: comprise a long 5mm, wide 2.5mm, the aluminum nitride ceramic substrate of thickness 1mm, the back up of described aluminum nitride ceramic substrate has back of the body conducting shell, the front of described aluminium nitride substrate is printed with wire and membranaceous resistance, described wire connects described resistance and forms typical π type attenuator circuit, described attenuator circuit is symmetrical along the cross central line of described aluminium nitride substrate, the output of described attenuator circuit, input is connected with a pad respectively, described two pads are symmetrical along the cross central line of described aluminium nitride substrate.
2. high frequency aluminium nitride ceramics according to claim 1 10 watts of 11dB attenuators, is characterized in that: described attenuator circuit adopts the design of π type attenuator circuit.
3. high frequency aluminium nitride ceramics according to claim 1 10 watts of 11dB attenuators, is characterized in that: described conductor layer is formed by the high temperature silver slurry printing containing glassy phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410235150.0A CN104241773A (en) | 2014-05-29 | 2014-05-29 | High-frequency aluminum nitride ceramic 10-watt 11dB attenuation plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410235150.0A CN104241773A (en) | 2014-05-29 | 2014-05-29 | High-frequency aluminum nitride ceramic 10-watt 11dB attenuation plate |
Publications (1)
| Publication Number | Publication Date |
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| CN104241773A true CN104241773A (en) | 2014-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410235150.0A Pending CN104241773A (en) | 2014-05-29 | 2014-05-29 | High-frequency aluminum nitride ceramic 10-watt 11dB attenuation plate |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361133A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W and 2dB attenuator with aluminium nitride ceramic baseplate |
-
2014
- 2014-05-29 CN CN201410235150.0A patent/CN104241773A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5332981A (en) * | 1992-07-31 | 1994-07-26 | Emc Technology, Inc. | Temperature variable attenuator |
| CN102361133A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W and 2dB attenuator with aluminium nitride ceramic baseplate |
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Application publication date: 20141224 |
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