CN101859620A - Manufacturing method of high-frequency high-power resistor - Google Patents
Manufacturing method of high-frequency high-power resistor Download PDFInfo
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- CN101859620A CN101859620A CN200910106383A CN200910106383A CN101859620A CN 101859620 A CN101859620 A CN 101859620A CN 200910106383 A CN200910106383 A CN 200910106383A CN 200910106383 A CN200910106383 A CN 200910106383A CN 101859620 A CN101859620 A CN 101859620A
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- attenuator
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Abstract
The invention relates to a manufacturing method of a high-power high-frequency tantalum nitride film resistor or an attenuator, which can ensure the regular production of the tantalum nitride film resistor and the attenuator with a pass rate of over 80 percent. The high-frequency high-power resistor can be used for completely replacing an imported product, and the price of a finished product is equal to 60 percent of the imported product. Therefore, the invention fills the gap in the field at home.
Description
Affiliated technical field:
Method for making of the present invention relates to sputter tantalum nitride membrane on aluminium nitride ceramics, makes resistance, and the products such as attenuator of other application tantalum nitride membrane technology production, fills up domestic blank.
Background technology:
At present, domestic do not have ripe high power as yet, the production technology of high frequency tantalum nitride membrane resistance and attenuator, so-called high-power be more than the 100W, high frequency is meant in 6GHZ standing internal wave performance 1.3 with interior performance.Known production technology has only foreign a few company, as grasps such as KDI, ATC, and domesticly has only thick film technology.
The flow process of present thick film technology:
1, ceramic substrate cleans; 2, seal electrode and circuit; 3, oven dry; 4, thick-film material printing; 5, oven dry; 6, measure resistance trimming; 7, add lead-in wire; 8, add flange; 9, add the encapsulation cover plate; 10, Reflow Soldering; 11, clean drying, packing.Whole process flow is very simple, and the overwhelming majority is manpower handwork.
Thick-film resistor differs greatly with film on the 2GHZ high frequency performance, more can't compare more than 2GHZ, and at the heatproof degree, on the moisture resistance, the stability of tantalum nitride membrane is higher than thick-film resistor far away.So in the HF communication industry, widely used power termination all is external imported product, and demand is big especially.Because the complex manufacturing of film tantalum nitride resistance and attenuator, to the equipment requirements height, to producers' requirement height, to the environmental requirement height, the problem that qualification rate is low so exploitation is attempted by many domestic manufacturers, does not all form scale.
Content of the present invention:
In order to solve the production problem of domestic film tantalum nitride resistance, formulated the technological process that adapts to:
1, ceramic substrate cutting, the size peace of cutting is according to designing requirement;
2, clean, contain city's water, alcohol, the ultrasonic waves pure water cleans, and each cleaned 10 minutes;
3, oven dry;
4, silver-colored slurry printing contains the electrode printing, back up, side printing (the necessary 200 degree oven dry in each printing back, 5 minutes time);
5, sputter, capital equipment are the vacuum magnetic-control sputtering stoves, the stability of sputter be set at 200 the degree, time set be 15 minutes,
6, the heat treatment of coming out of the stove;
7, measure resistance trimming;
8, medium encapsulation; Or add encapsulation cover plate and flange;
9, marking.
Accompanying drawing is the concrete process chart that high-frequency high-power resistor is made, and below in conjunction with accompanying drawing this technological process is further specified.
Among the figure 1 and 2, ceramic substrate mainly is the aluminium nitride ceramics substrate, because laser relatively be easy to generate metallic aluminium, and aluminium is conductive materials when cutting high-quality ceramic substrate, so adopt the diamond chip cutting sometimes;
3, all wafer separators all are in order to be applicable to the separation of frangible bodies such as pottery, and independently developed equipment, the efficient height, accuracy in the time of can guaranteeing burst has the fool proof function.
4, cleaning contains 3 kinds of cleanings, city's water, and alcohol, the ultrasonic waves pure water for developing cleaning equipment voluntarily, guarantees cleaning performance.
5, positive by silver, adopt Semi-automatic printer; 5 of each start printing earlier through the QC personnel inspections, by after, could normal boot-strap production, notes abnormalities in the middle of producing, the QC personnel requirement product line of having the right suspends, and checks.
6, in the drying machine drying process, guarantee normal cleanliness factor.If printing is unusual, return cleaning, again printing.
11, the net belt type sintering furnace guarantees the temperature and time of sintering, and gets rid of the refuse that produces in the sintering process.
12, the substrate behind the inspection sintering, if normal, sputter nitrogenize tantalum film; 13, burst once more guarantees the position of sputtered film;
14, last sputter anchor clamps, corresponding different power resistor, or different attenuators have the anchor clamps of different pattern.
15, the sputtering technology in the sputter stove requires than higher, specific requirement: temperature in the stove, vacuum degree, bias voltage, tantalum target (purity 99.95%) electric current, target temperature, the flow and the ratio of argon gas and nitrogen in the stove.
17, heat treatment process is handled film, and the metal lattice of film is changed, and makes the performance of film more stable.
18, adopt symmetry to reduce the way of film during resistance trimming, guarantee high frequency performance, when adjusting attenuator, contrast corresponding instrument and handle.
19, the fire resistant epoxy encapsulation guarantees that properties of product are constant.
By above-mentioned technological process, guarantee high-power, the production of film tantalum nitride resistance and attenuator and qualification rate, general qualification rate is more than 80%.
Claims (6)
1. produce high power, the tantalum nitride membrane resistance of high frequency and the manufacture method of attenuator for one kind.
2. technology according to claim 1 is characterized in that: sputter tantalum nitride membrane on the aluminium nitride ceramics.
3. technology according to claim 1 is characterized in that resistance or attenuator.
4. technology according to claim 1 is characterized in that 100 watts and above resistance.
5. technology according to claim 1, it is characterized in that the 6GHZ standing internal wave 1.3 with interior resistance.
6. technology according to claim 1 is characterized in that the attenuator of various DB more than 100 watts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910106383A CN101859620A (en) | 2009-04-08 | 2009-04-08 | Manufacturing method of high-frequency high-power resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910106383A CN101859620A (en) | 2009-04-08 | 2009-04-08 | Manufacturing method of high-frequency high-power resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101859620A true CN101859620A (en) | 2010-10-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910106383A Pending CN101859620A (en) | 2009-04-08 | 2009-04-08 | Manufacturing method of high-frequency high-power resistor |
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| CN (1) | CN101859620A (en) |
Cited By (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN102315505A (en) * | 2011-09-08 | 2012-01-11 | 苏州市新诚氏电子有限公司 | 60-watt loading sheet of aluminium nitride ceramic substrate with 50 omegas of impedance |
| CN102324606A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 70W loading plate with impedance of 50 omega |
| CN102324611A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Small-size aluminum nitride ceramic substrate 100W patch load film with impedance being 50 omega |
| CN102324608A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Wide pad aluminium nitride ceramic substrate 150 watts load chip |
| CN102324604A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100W loading plate with impedance of 50 ohm |
| CN102332630A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | Large-power 150-watt and 30-dB attenuation sheet for aluminum-nitride-ceramic substrate |
| CN102332628A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate |
| CN102332627A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate |
| CN102332629A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | Large-power aluminum-nitride-ceramic substrate 250-watt loading sheet with impedance of 50 ohms |
| CN102332626A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 150-watt load sheet of large power aluminium nitride ceramic substrate with impedance of 50 ohms |
| CN102332624A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 30W load sheet of aluminum nitride ceramic substrate with impedance of 50 omegas |
| CN102354784A (en) * | 2011-08-25 | 2012-02-15 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watt 30 dB attenuation plate |
| CN102361136A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using aluminum nitride ceramic substrate |
| CN102361128A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power load sheet (150W) using aluminum nitride ceramic substrate |
| CN102361127A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (30W) using alumina ceramic substrate |
| CN102361122A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
| CN102361123A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W3dB attenuating piece of aluminium nitride ceramic substrate |
| CN102361137A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Paster type 25 watt loading sheet of aluminium nitride ceramic substrate with impedance of 50 ohms |
| CN102361120A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate |
| CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
| CN102361142A (en) * | 2011-09-20 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (20W) having impedance of 50omega and provided with thin aluminum nitride ceramic substrate |
| CN102361135A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (150W) with impedance of 50omega using aluminum nitride ceramic substrate |
| CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
| CN102361125A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W1dB attenuating piece of aluminium nitride ceramic substrate |
| CN102361121A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Large power aluminium nitride ceramic substrate 250 watts load chip |
| CN102361131A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (125W) with impedance of 50omega using aluminum nitride ceramic substrate |
| CN102361129A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W and 9dB attenuator with aluminium nitride ceramic baseplate |
| CN102427154A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 200W large-power aluminum nitride ceramic substrate loading chip with 50 Ohms impedance |
| CN102427155A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 16W aluminum nitride ceramic substrate SMD (Surface Mounted Device) loading chip with 50 Ohms impedance |
| CN102427156A (en) * | 2011-09-20 | 2012-04-25 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate 80 watts paster type load sheet |
| CN102427152A (en) * | 2011-09-01 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 100W aluminum nitride ceramic substrate loading chip with wide solder pad and 50 Ohms impedance |
| CN102437401A (en) * | 2011-07-22 | 2012-05-02 | 苏州市新诚氏电子有限公司 | 150W easily-welded loading sheet with aluminium nitride ceramic substrate |
| CN102709639A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 10w load plate for aluminum nitride ceramic substrate with impedance of 50ohm |
| CN102709648A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 150w load plate for small-size high-power aluminum nitride ceramic substrate |
| CN102709647A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 300-watt loading sheet of high-power aluminum nitride ceramic substrate |
| CN102723561A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 250W small-size aluminum nitride ceramic base plate load sheet with impedance of 50 ohms |
| CN102723551A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 30-watt 18dB attenuator for aluminum nitride ceramic substrate |
| CN102800448A (en) * | 2012-08-23 | 2012-11-28 | 中国振华集团云科电子有限公司 | Tantalum nitride sheet-type thin film resistor and manufacturing method thereof |
| CN102842398A (en) * | 2012-08-27 | 2012-12-26 | 华中科技大学 | Preparation method for chip-type ceramic sensitive element and corresponding product thereof |
| CN103022629A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Method for manufacturing thick film for sheet-type film attenuator |
| CN103022628A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Method for manufacturing thin film for sheet-type film attenuator |
| CN104241762A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Novel optimized 150 W loading piece with aluminum nitride ceramic substrate |
-
2009
- 2009-04-08 CN CN200910106383A patent/CN101859620A/en active Pending
Cited By (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290623A (en) * | 2011-05-26 | 2011-12-21 | 苏州市新诚氏电子有限公司 | High-power 100W-20dB attenuator with aluminium nitride ceramic substrate |
| CN102332627A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate |
| CN102437401A (en) * | 2011-07-22 | 2012-05-02 | 苏州市新诚氏电子有限公司 | 150W easily-welded loading sheet with aluminium nitride ceramic substrate |
| CN102332624A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 30W load sheet of aluminum nitride ceramic substrate with impedance of 50 omegas |
| CN102332626A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 150-watt load sheet of large power aluminium nitride ceramic substrate with impedance of 50 ohms |
| CN102332629A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | Large-power aluminum-nitride-ceramic substrate 250-watt loading sheet with impedance of 50 ohms |
| CN102332630A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | Large-power 150-watt and 30-dB attenuation sheet for aluminum-nitride-ceramic substrate |
| CN102332628A (en) * | 2011-07-22 | 2012-01-25 | 苏州市新诚氏电子有限公司 | 100-watt 30dB high-power attenuator of aluminum nitride ceramic substrate |
| CN102354784A (en) * | 2011-08-25 | 2012-02-15 | 苏州市新诚氏电子有限公司 | Large power aluminum nitride ceramic substrate 100 watt 30 dB attenuation plate |
| CN102427152A (en) * | 2011-09-01 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 100W aluminum nitride ceramic substrate loading chip with wide solder pad and 50 Ohms impedance |
| CN102324608A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Wide pad aluminium nitride ceramic substrate 150 watts load chip |
| CN102324611A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Small-size aluminum nitride ceramic substrate 100W patch load film with impedance being 50 omega |
| CN102324604A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 100W loading plate with impedance of 50 ohm |
| CN102324606A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 70W loading plate with impedance of 50 omega |
| CN102361125A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W1dB attenuating piece of aluminium nitride ceramic substrate |
| CN102361127A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (30W) using alumina ceramic substrate |
| CN102361122A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 30W-10dB attenuation plate of aluminium nitride ceramic substrate |
| CN102361123A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W3dB attenuating piece of aluminium nitride ceramic substrate |
| CN102361128A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power load sheet (150W) using aluminum nitride ceramic substrate |
| CN102361120A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate |
| CN102361126A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 40W loading piece of aluminium oxide ceramic substrate with impedance being 50 omega |
| CN102361129A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 20W and 9dB attenuator with aluminium nitride ceramic baseplate |
| CN102315505A (en) * | 2011-09-08 | 2012-01-11 | 苏州市新诚氏电子有限公司 | 60-watt loading sheet of aluminium nitride ceramic substrate with 50 omegas of impedance |
| CN102361121A (en) * | 2011-09-08 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Large power aluminium nitride ceramic substrate 250 watts load chip |
| CN102361135A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (150W) with impedance of 50omega using aluminum nitride ceramic substrate |
| CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
| CN102361131A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (125W) with impedance of 50omega using aluminum nitride ceramic substrate |
| CN102427154A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 200W large-power aluminum nitride ceramic substrate loading chip with 50 Ohms impedance |
| CN102427155A (en) * | 2011-09-16 | 2012-04-25 | 苏州市新诚氏电子有限公司 | 16W aluminum nitride ceramic substrate SMD (Surface Mounted Device) loading chip with 50 Ohms impedance |
| CN102361137A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Paster type 25 watt loading sheet of aluminium nitride ceramic substrate with impedance of 50 ohms |
| CN102361136A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using aluminum nitride ceramic substrate |
| CN102361142A (en) * | 2011-09-20 | 2012-02-22 | 苏州市新诚氏电子有限公司 | Load sheet (20W) having impedance of 50omega and provided with thin aluminum nitride ceramic substrate |
| CN102427156A (en) * | 2011-09-20 | 2012-04-25 | 苏州市新诚氏电子有限公司 | Aluminium nitride ceramic substrate 80 watts paster type load sheet |
| CN102709647A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 300-watt loading sheet of high-power aluminum nitride ceramic substrate |
| CN102709648A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 150w load plate for small-size high-power aluminum nitride ceramic substrate |
| CN102709639A (en) * | 2012-06-28 | 2012-10-03 | 苏州市新诚氏电子有限公司 | 10w load plate for aluminum nitride ceramic substrate with impedance of 50ohm |
| CN102723561A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 250W small-size aluminum nitride ceramic base plate load sheet with impedance of 50 ohms |
| CN102723551A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | 30-watt 18dB attenuator for aluminum nitride ceramic substrate |
| CN102800448A (en) * | 2012-08-23 | 2012-11-28 | 中国振华集团云科电子有限公司 | Tantalum nitride sheet-type thin film resistor and manufacturing method thereof |
| CN102800448B (en) * | 2012-08-23 | 2015-11-04 | 中国振华集团云科电子有限公司 | Tantalum nitride sheet-type thin film resistor and manufacture method thereof |
| CN102842398A (en) * | 2012-08-27 | 2012-12-26 | 华中科技大学 | Preparation method for chip-type ceramic sensitive element and corresponding product thereof |
| CN102842398B (en) * | 2012-08-27 | 2015-08-26 | 华中科技大学 | A kind of preparation method of chip Ceramic sensible devices and corresponding product thereof |
| CN103022629A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Method for manufacturing thick film for sheet-type film attenuator |
| CN103022628A (en) * | 2012-12-19 | 2013-04-03 | 中国振华集团云科电子有限公司 | Method for manufacturing thin film for sheet-type film attenuator |
| CN104241762A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Novel optimized 150 W loading piece with aluminum nitride ceramic substrate |
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