CN102361136A - SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using aluminum nitride ceramic substrate - Google Patents
SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using aluminum nitride ceramic substrate Download PDFInfo
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- CN102361136A CN102361136A CN2011102781134A CN201110278113A CN102361136A CN 102361136 A CN102361136 A CN 102361136A CN 2011102781134 A CN2011102781134 A CN 2011102781134A CN 201110278113 A CN201110278113 A CN 201110278113A CN 102361136 A CN102361136 A CN 102361136A
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Abstract
The invention discloses an SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using an aluminum nitride ceramic substrate. The SMT type load sheet comprises the aluminum nitride substrate with the size of 6*9*1mm, wherein, a rear conductor layer is printed on the rear face of the aluminum nitride substrate; and resistors and leads are printed on the front face of the aluminum nitride substrate and are connected together to form a load circuit, a grounding terminal of the load circuit is electrically connected with the rear conductor layer, and glass protective films are printed on the resistors. The SMT type load sheet (120W) with the impedance of 50omega using the aluminum nitride ceramic substrate has the advantages that stable performance can be ensured on a high-frequency end, thus meeting the market requirements; and in addition, the SMT type design with high power up to 120W is realized on the aluminum nitride ceramic substrate with the size of 6*9*1mm so as to complete a product catalog of the SMT type high-power aluminum nitride ceramic load sheet and promote the conversion process of the manufacture procedure from an MI type aluminum nitride ceramic load sheet to the SMT type aluminum nitride ceramic load sheet in the industry.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics substrate carrier sheet; Being particularly related to a kind of impedance is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates; Extended the product line of SMT type aluminium nitride power termination sheet, accomplished the SMD carrier sheet of its SMT type by low-power gradually to high-power design process.
Background technology
High-power aluminium nitride ceramics substrate carrier sheet is different with traditional resistance; Because for high-power requirement; Stock size is all bigger, and the mode of its processing procedure all adopts the MI manual welding mode that is similar to, because the human factor in its processing procedure process; Caused the increase of unreliable factor in process of production, thereby made the bad stability of product quality.And the mode of handwork makes enterprise receive the restriction of human resources easily.So also put forth effort on the product development of SMT type the producer of aluminium nitride ceramics substrate in recent years, produce by mechanization and improve stability and production efficiency.The conventional negative slide glass; The manual welding or the reflow soldering process that adopt are welded to carrier sheet on client's the product; Again wire bonds to the pad of carrier sheet, the carrier sheet of this technology back of the body conducting shell all is an integral body, be welded on client's the product after; The whole back side and product fit like a glove, good heat dispersion performance.Some client has adopted the SMT paster technique at present, and carrier sheet back of the body conducting shell just need be reserved the slit like this, and after paster was accomplished, back of the body conducting shell can not have the product contact fully, and heat-sinking capability can variation.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of 6*9*1mm of being of a size of can bear 120W power aluminium nitride ceramics substrate SMT carrier sheet; Extended the catalogue of the surface attachment type product of present aluminium nitride ceramics substrate power termination sheet, made the carrier sheet that is higher than 100 watts also get into the SMT field.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of impedance is that impedance is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates; It comprises the aluminium nitride substrate of a 6*9*1mm; The back up of said aluminium nitride substrate has special back of the body conducting shell, and the front of said aluminium nitride substrate is printed with resistance and lead, and said lead connects said resistance and forms load circuit; The earth terminal of said load circuit is electrically connected with said back of the body conducting shell, is printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Preferably, said back of the body conducting shell and lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Technique scheme has following beneficial effect: the impedance of this structure is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates; Power on the aluminium nitride ceramics substrate of 6*9*1mm reaches 120W; Extend the kind of SMT aluminium nitride ceramics substrate carrier sheet in the market, quickened the power process that aluminium nitride power termination sheet SMT type transforms.Be also to show stablely simultaneously, satisfied the requirement of market, can carry out good coupling with external equipment to standing-wave ratio at high frequency.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; This impedance is the aluminium nitride substrate 1 that 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates comprise a 6*9*1mm; The separative back of the body conducting shell 6 of the back up of aluminium nitride substrate 1, the front of aluminium nitride substrate 1 is printed with resistance 3 and lead 2, and lead 2 connects resistance 3 and forms load circuit; The two-terminal-grounding 7 of load circuit is electrically connected through the silver slurry with back of the body conducting shell, thereby makes the load circuit earth-continuity.Back of the body conducting shell and lead 2 are formed by the conductive silver paste printing, and resistance 3 is formed by the resistance slurry printing.Be printed with glass protection film 4 on the resistance 3.The upper surface of lead 2 and glass protection film 4 also is printed with one deck black protective film 5.
The impedance of this structure is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates; Power on the aluminium nitride ceramics substrate of 6*9*1mm can reach 120W; Reached the new breakthrough of power again on the catalogue of SMT carrier sheet; Promoted the process that mechanization is produced, further improved the stability and the product quality of processing procedure, and can make manufacturing enterprise break away from the constraint of human resources.Power according to this aluminium nitride ceramics substrate carrier sheet of detection can be born is highly stable.
More than be that 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates have been carried out detailed introduction to a kind of impedance that the embodiment of the invention provided; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. an impedance is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates; It is characterized in that: it comprises the aluminium nitride substrate of a 6*9*1mm; The back up of said aluminium nitride substrate has back of the body conducting shell, and the front of said aluminium nitride substrate is printed with resistance and lead, and said lead connects said resistance and forms load circuit; The earth terminal of said load circuit is electrically connected with said back of the body conducting shell, is printed with glass protection film on the said resistance.
2. impedance according to claim 1 is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates, and it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
3. impedance according to claim 1 is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates, and it is characterized in that: said back of the body conducting shell and lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
4. said impedance is 120 watts of patch-type carrier sheet of 50 Ω aluminium nitride ceramics substrates according to claim 1, it is characterized in that: said back of the body conducting shell is not an integral body, and it needs the conducting of two-terminal-grounding slurry and connects.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102781134A CN102361136A (en) | 2011-09-16 | 2011-09-16 | SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using aluminum nitride ceramic substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102781134A CN102361136A (en) | 2011-09-16 | 2011-09-16 | SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using aluminum nitride ceramic substrate |
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| CN102361136A true CN102361136A (en) | 2012-02-22 |
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| CN2011102781134A Pending CN102361136A (en) | 2011-09-16 | 2011-09-16 | SMT (Surface Mount Technology) type load sheet (120W) with impedance of 50omega using aluminum nitride ceramic substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883704A (en) * | 1987-03-30 | 1989-11-28 | Kabushiki Kaisha Toshiba | Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it |
| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
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2011
- 2011-09-16 CN CN2011102781134A patent/CN102361136A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883704A (en) * | 1987-03-30 | 1989-11-28 | Kabushiki Kaisha Toshiba | Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it |
| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361138A (en) * | 2011-09-16 | 2012-02-22 | 苏州市新诚氏电子有限公司 | 120 W loading sheet of large-power aluminum nitride ceramic substrate with impedance of 50 ohms |
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Application publication date: 20120222 |