CN102324607A - Aluminum nitride ceramic substrate 100W patch load film - Google Patents
Aluminum nitride ceramic substrate 100W patch load film Download PDFInfo
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- CN102324607A CN102324607A CN201110255837A CN201110255837A CN102324607A CN 102324607 A CN102324607 A CN 102324607A CN 201110255837 A CN201110255837 A CN 201110255837A CN 201110255837 A CN201110255837 A CN 201110255837A CN 102324607 A CN102324607 A CN 102324607A
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- aluminium nitride
- aluminum nitride
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Abstract
The invention discloses an aluminum nitride ceramic substrate 100W patch load film which comprises a 6.35*6.35*1mm aluminum nitride substrate; a back conductive layer is printed on the back side of the aluminum nitride substrate; a resistor and a lead are printed on the front side of the aluminum nitride substrate; the lead is connected with the resistor to form a load circuit; the grounding end of the load circuit is electrically connected with the back conductive layer; and a glass protective film is printed on the resistor. The aluminum nitride ceramic substrate 100W patch load film in the structure has good voltage standing wave ratio (VSWR), has 100W power on the 6.35*6.35*1mm aluminum nitride substrate, simultaneously the property reaches 3G, so that the aluminum nitride substrate with the size has a wider scope of application and can be better matched with equipment.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics substrate carrier sheet, 100 watts of SMD carrier sheet of particularly a kind of aluminium nitride ceramics substrate, and power reaches 100W, and can be used in the SMT field, makes client realize the high speed paster, quickens processing procedure.
Background technology
Aluminium nitride ceramics substrate carrier sheet is mainly used in the power that in communication base station, absorbs reverse input in the communication component, if can not bear the power of requirement, load will burn out, and possibly cause entire equipment to burn out.Most carrier sheet are that manual welding or the reflow soldering process that adopts is welded to carrier sheet on client's the product; Again wire bonds to the pad of carrier sheet, the carrier sheet of this technology back of the body conducting shell all is an integral body, be welded on client's the product after; The whole back side and product fit like a glove, good heat dispersion performance.Some client has adopted the SMT paster technique at present, and carrier sheet back of the body conducting shell just need be reserved the slit like this, and after paster was accomplished, back of the body conducting shell can not have the product contact fully, and heat-sinking capability can variation.
Summary of the invention
To the deficiency of above-mentioned prior art, the technical problem that the present invention will solve provides a kind of power that can bear 100W, is of a size of 6.35*6.35*1mm, and performance can reach the SMD carrier sheet of aluminium nitride ceramics substrate of 3G instructions for use.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
100 watts of SMD carrier sheet of a kind of aluminium nitride ceramics substrate; It comprises the aluminium nitride substrate of a 6.35*6.35*1mm; The back up of said aluminium nitride substrate has back of the body conducting shell, and the front of said aluminium nitride substrate is printed with resistance and lead, and said lead connects said resistance and forms load circuit; The two-terminal-grounding of said load circuit is electrically connected with said back of the body conducting shell, is printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Preferably, said back of the body conducting shell and lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Technique scheme has following beneficial effect: 100 watts of SMD carrier sheet of the aluminium nitride ceramics substrate of this structure have good VSWR performance; Power on the aluminium nitride ceramics substrate of 6.35*6.35*1mm reaches 100W; Be suitable for the SMD production technology of SMT and use, can be used in the SMT field and carry out mechanization production, thereby quicken processing procedure; Change original manual welding mode, improved client's production efficiency.Make the aluminium nitride ceramics substrate scope of application of this size wider.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 100 watts of SMD carrier sheet of this aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 6.35*6.35*1mm; The separative back of the body conducting shell 6 of the back up of aluminium nitride substrate 1, the front of aluminium nitride substrate 1 is printed with resistance 3 and lead 2, and lead 2 connects resistance 3 and forms load circuit; The two-terminal-grounding 7 of load circuit is electrically connected through the silver slurry with back of the body conducting shell, thereby makes the load circuit earth-continuity.Back of the body conducting shell and lead 2 are formed by the conductive silver paste printing, and resistance 3 is formed by the resistance slurry printing.Be printed with glass protection film 4 on the resistance 3.The upper surface of lead 2 and glass protection film 4 also is printed with one deck black protective film 5.
100 watts of SMD carrier sheet of the aluminium nitride ceramics substrate of this structure have good VSWR performance; Power on the aluminium nitride ceramics substrate of 6.35*6.35*1mm reaches 100W; Be suitable for the SMD production technology of SMT and use, can be used in the SMT field and carry out mechanization production, thereby quicken processing procedure; Change original manual welding mode, improved client's production efficiency.Make the aluminium nitride ceramics substrate scope of application of this size wider.
Power according to this aluminium nitride ceramics substrate carrier sheet of detection can be born is highly stable, can reach the requirement that communication period absorbs required power fully,
More than 100 watts of SMD carrier sheet of a kind of aluminium nitride ceramics substrate that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. 100 watts of SMD carrier sheet of an aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 6.35*6.35*1mm; The back up of said aluminium nitride substrate has back of the body conducting shell, and the front of said aluminium nitride substrate is printed with resistance and lead, and said lead connects said resistance and forms load circuit; The both sides earth terminal of said load circuit is electrically connected with said back of the body conducting shell, is printed with glass protection film on the said resistance.
2. according to 100 watts of SMD carrier sheet of the said aluminium nitride ceramics substrate of claim 1, it is characterized in that: said back of the body conducting shell is not an integral body, and it needs the conducting of two-terminal-grounding slurry and connects.
3. 100 watts of SMD carrier sheet of aluminium nitride ceramics substrate according to claim 1, it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
4. 100 watts of SMD carrier sheet of aluminium nitride ceramics substrate according to claim 1 is characterized in that: said back of the body conducting shell and lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110255837A CN102324607A (en) | 2011-09-01 | 2011-09-01 | Aluminum nitride ceramic substrate 100W patch load film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110255837A CN102324607A (en) | 2011-09-01 | 2011-09-01 | Aluminum nitride ceramic substrate 100W patch load film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102324607A true CN102324607A (en) | 2012-01-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110255837A Pending CN102324607A (en) | 2011-09-01 | 2011-09-01 | Aluminum nitride ceramic substrate 100W patch load film |
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| CN (1) | CN102324607A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100872054B1 (en) * | 2008-05-15 | 2008-12-05 | 신계철 | Chip scale package jig separate system |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
-
2011
- 2011-09-01 CN CN201110255837A patent/CN102324607A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100872054B1 (en) * | 2008-05-15 | 2008-12-05 | 신계철 | Chip scale package jig separate system |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
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Application publication date: 20120118 |