CN104241764A - Aluminum nitride ceramic substrate 20 W SMT type load slice - Google Patents
Aluminum nitride ceramic substrate 20 W SMT type load slice Download PDFInfo
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- CN104241764A CN104241764A CN201410231879.0A CN201410231879A CN104241764A CN 104241764 A CN104241764 A CN 104241764A CN 201410231879 A CN201410231879 A CN 201410231879A CN 104241764 A CN104241764 A CN 104241764A
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Abstract
The invention discloses an aluminum nitride ceramic substrate 20 W SMT type load slice. The load slice comprises a 5 mm*2.5 mm*1 mm aluminum nitride substrate. A back conductor layer is printed on the back surface of the aluminum nitride substrate, resistors and wires are printed on the front surface of the aluminum nitride substrate, the resistors are connected through the wires to form a load circuit, the grounding end of the load circuit is electrically connected with the back conductor layer, and glass protection films are printed on the resistors. The aluminum nitride ceramic substrate 20 W SMT type load slice of the structure has the good VSWR performance. When the power of the 5 mm*2.5 mm*1 mm aluminum nitride ceramic substrate reaches 20 W, the characteristics of the 5 mm*2.5 mm*1 mm aluminum nitride ceramic substrate meet the requirements of 3G at the same time, and therefore the 5 mm*2.5 mm*1 mm aluminum nitride ceramic substrate is wider in use range and can be better matched with equipment.
Description
Technical field
The present invention relates to a kind of aluminum nitride ceramic substrate carrier sheet, particularly a kind of aluminum nitride ceramic substrate 20 watts of SMD carrier sheet, and power reaches 20W, and can be used in SMT field, makes client realize high-speed paster, accelerates processing procedure.
Background technology
Aluminum nitride ceramic substrate carrier sheet is mainly used in absorbing the power of oppositely input in communication component in communication base station, if can not bear the power of requirement, load will burn out, and whole equipment may be caused to burn out.Most carrier sheet is that the manual welding that adopts or reflow soldering process are welded to carrier sheet on the product of client, again wire bonds on the pad of carrier sheet, the carrier sheet back of the body conducting shell of this technique is all an entirety, after on the product being welded to client, the whole back side and product fit like a glove, good heat dispersion performance.Some client have employed SMT paster technique at present, and such carrier sheet back of the body conducting shell just needs to reserve gap, and after paster completes, back of the body conducting shell can not have product to contact completely, and heat-sinking capability can be deteriorated.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the technical problem to be solved in the present invention is to provide a kind of power that can bear 20W, is of a size of 5*2.5*1mm, and performance can reach the SMD carrier sheet of aluminum nitride ceramic substrate of 3G instructions for use.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of aluminum nitride ceramic substrate 20 watts of SMD carrier sheet; it comprises the aluminium nitride substrate of a 5*2.5*1mm; the back up of described aluminium nitride substrate has back of the body conducting shell; the front of described aluminium nitride substrate is printed with resistance and wire; described wire connects described resistance and forms load circuit; the two-terminal-grounding of described load circuit is electrically connected with described back of the body conducting shell, and described resistance is printed with glass protection film.
Preferably, described back of the body conducting shell is not an entirety, and it needs the conducting of two-terminal-grounding slurry and connects.
Preferably, the upper surface of described wire and glass protection film is also printed with one deck black protective film.
Preferably, described back of the body conducting shell and wire are formed by conductive silver paste printing, and described resistance is formed by resistance slurry printing.
Technique scheme has following beneficial effect: aluminum nitride ceramic substrate 20 watts of SMD carrier sheet of this structure have good VSWR performance, power on the aluminum nitride ceramic substrate of 5*2.5*1mm reaches 20W, be suitable for the SMD production technology of SMT to use, SMT field can be used in and carry out mechanization production, thus acceleration processing procedure, change original manual welding mode, improve the production efficiency of client.Make the aluminum nitride ceramic substrate scope of application of this size wider.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Fig. 1, Fig. 2, Fig. 3 are the structural representation of the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
As shown in Figure 1, this aluminum nitride ceramic substrate 20 watts of SMD carrier sheet comprise the aluminium nitride substrate 1 of a 5*2.5*1mm, the separative back of the body conducting shell 6 (shown in Fig. 2) of back up of aluminium nitride substrate 1, the front of aluminium nitride substrate 1 is printed with resistance 3 and wire 2, wire 2 contact resistance 3 forms load circuit, the two-terminal-grounding 7 of load circuit is electrically connected (shown in Fig. 3) by silver-colored slurry with back of the body conducting shell, thus makes load circuit earth-continuity.Back of the body conducting shell and wire 2 are formed by conductive silver paste printing, and resistance 3 is formed by resistance slurry printing.Resistance 3 is printed with glass protection film 4.The upper surface of wire 2 and glass protection film 4 is also printed with one deck black protective film 5.
Aluminum nitride ceramic substrate 20 watts of SMD carrier sheet of this structure have good VSWR performance, power on the aluminum nitride ceramic substrate of 5*2.5*1mm reaches 20W, be suitable for the SMD production technology of SMT to use, SMT field can be used in and carry out mechanization production, thus acceleration processing procedure, change original manual welding mode, improve the production efficiency of client.Make the aluminum nitride ceramic substrate scope of application of this size wider.
The power that can bear according to this aluminum nitride ceramic substrate carrier sheet of detection is highly stable, the requirement that communication period absorbs required power can be reached completely, above a kind of aluminum nitride ceramic substrate 20 watts of SMD carrier sheet that the embodiment of the present invention provides are described in detail, for one of ordinary skill in the art, according to the thought of the embodiment of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention, all any changes made according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (4)
1. an aluminum nitride ceramic substrate 20 watts of SMD carrier sheet; it is characterized in that: it comprises the aluminium nitride substrate of a 5*2.5*1mm; the back up of described aluminium nitride substrate has back of the body conducting shell; the front of described aluminium nitride substrate is printed with resistance and wire; described wire connects described resistance and forms load circuit; the both sides earth terminal of described load circuit is electrically connected with described back of the body conducting shell, and described resistance is printed with glass protection film.
2. aluminum nitride ceramic substrate 20 watts of SMD carrier sheet according to claim 1, is characterized in that: described back of the body conducting shell is not an entirety, and it needs the conducting of two-terminal-grounding slurry and connects.
3. aluminum nitride ceramic substrate according to claim 1 20 watts of SMD carrier sheet, is characterized in that: the upper surface of described wire and glass protection film is also printed with one deck black protective film.
4. aluminum nitride ceramic substrate according to claim 1 20 watts of SMD carrier sheet, is characterized in that: described back of the body conducting shell and wire are formed by conductive silver paste printing, and described resistance is formed by resistance slurry printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410231879.0A CN104241764A (en) | 2014-05-28 | 2014-05-28 | Aluminum nitride ceramic substrate 20 W SMT type load slice |
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| CN201410231879.0A CN104241764A (en) | 2014-05-28 | 2014-05-28 | Aluminum nitride ceramic substrate 20 W SMT type load slice |
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| CN104241764A true CN104241764A (en) | 2014-12-24 |
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| CN201410231879.0A Pending CN104241764A (en) | 2014-05-28 | 2014-05-28 | Aluminum nitride ceramic substrate 20 W SMT type load slice |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106654490A (en) * | 2016-11-23 | 2017-05-10 | 苏州市新诚氏电子有限公司 | 20W thick-film and high-frequency load plate and production method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324605A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 20W loading plate with impedance of 50 omega |
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2014
- 2014-05-28 CN CN201410231879.0A patent/CN104241764A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324605A (en) * | 2011-09-01 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 20W loading plate with impedance of 50 omega |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106654490A (en) * | 2016-11-23 | 2017-05-10 | 苏州市新诚氏电子有限公司 | 20W thick-film and high-frequency load plate and production method thereof |
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Application publication date: 20141224 |