CN102324605A - Aluminum nitride ceramic substrate 20W loading plate with impedance of 50 omega - Google Patents
Aluminum nitride ceramic substrate 20W loading plate with impedance of 50 omega Download PDFInfo
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- CN102324605A CN102324605A CN201110255822A CN201110255822A CN102324605A CN 102324605 A CN102324605 A CN 102324605A CN 201110255822 A CN201110255822 A CN 201110255822A CN 201110255822 A CN201110255822 A CN 201110255822A CN 102324605 A CN102324605 A CN 102324605A
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- aluminum nitride
- ceramic substrate
- nitride ceramic
- loading plate
- aluminium nitride
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Abstract
The invention discloses an aluminum nitride ceramic substrate 20W loading plate with the impedance of 50 omega. The aluminum nitride ceramic substrate 20W loading plate comprises a 5*2.5*1mm aluminum nitride substrate, wherein a back conducting layer is printed on the back side of the aluminum nitride substrate; a resistor and a lead are printed on the front side of the aluminum nitride substrate; the lead is connected with the resistor to form a load circuit; the ground terminal of the load circuit is electrically connected with the back conducting layer; and a glass protecting film is printed on the resistor. The aluminum nitride ceramic substrate 20W loading plate with the impedance of 50 omega and the structure has favorable VSWR (Voltage Standing Wave Ratio) performance; the power of the high-power aluminum nitride ceramic substrate loading plate on the 5*2.5*1mm aluminum nitride substrate reaches 20W; and meanwhile, the capacity of the high-power aluminum nitride ceramic substrate 20W loading plate is ensured to reach 3G, the power of the aluminum nitride ceramic substrate loading plate with the size is improved to be 20W on the premise of excellent performance, the service range of the aluminum nitride ceramic substrate with the size is wider and the aluminum nitride ceramic substrate with the size can be better matched with equipment.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics substrate carrier sheet, and particularly a kind of impedance is 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets.
Background technology
Aluminium nitride ceramics substrate carrier sheet is mainly used in the power that in communication base station, absorbs reverse input in the communication component, if can not bear the power of requirement, load will burn out, and possibly cause entire equipment to burn out.Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component, requires basic size more and more littler, and needs power absorbed increasing; Characteristics of product just VSWR (standing-wave ratio) is more little good more, and market value basis need satisfy in 1.25: 1. and along with increasing of frequency range, the VSWR of product also will be high more. and at present domestic carrier sheet VSWR reaches requirement at 3G with interior; There is minority can reach 3G; But along with the continuous development of communication network, to frequency range require increasingly high, so size is more little; The frequency range that can reach is high more, is the direction of development.
Summary of the invention
To the deficiency of above-mentioned prior art, the technical problem that the present invention will solve provides a kind of power that can bear 20W, and standing wave needs to satisfy the small size aluminium nitride ceramics substrate carrier sheet of present 3G demand.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of impedance is 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets; It comprises the aluminium nitride substrate of a 5*2.5*1mm; The back up of said aluminium nitride substrate has back of the body conducting shell, and the front of said aluminium nitride substrate is printed with resistance and lead, and said lead connects said resistance and forms load circuit; The earth terminal of said load circuit is electrically connected with said back of the body conducting shell, is printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Preferably, said back of the body conducting shell and lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Technique scheme has following beneficial effect: the impedance of this structure is that 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets have good VSWR performance; Power on the aluminium nitride ceramics substrate of 5*2.5*1mm reaches 20W; Make its characteristic reach 3G simultaneously, satisfied that size is little often, the requirement that characteristic is good; Make the aluminium nitride ceramics substrate scope of application of this size wider, also can carry out good coupling with equipment more.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; This impedance is the aluminium nitride substrate 1 that 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets comprise a 5*2.5*1mm; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with resistance 3 and lead 2, and lead 2 connects resistance 3 and forms load circuit; The earth terminal of load circuit is electrically connected through the silver slurry with back of the body conducting shell, thereby makes the load circuit earth-continuity.Back of the body conducting shell and lead 2 are formed by the conductive silver paste printing, and resistance 3 is formed by the resistance slurry printing.Be printed with glass protection film 4 on the resistance 3.The upper surface of lead 2 and glass protection film 4 also is printed with one deck black protective film 5.
The impedance of this structure is that 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets have good VSWR performance; Power on the aluminium nitride ceramics substrate of 5*2.5*1mm reaches 20W; Make its characteristic reach 3G simultaneously, satisfied that size is little often, the requirement that characteristic is good; Make the aluminium nitride ceramics substrate scope of application of this size wider, also can carry out good coupling with equipment more.Power according to this aluminium nitride ceramics substrate carrier sheet of detection can be born is highly stable, can reach the requirement that communication period absorbs required power fully,
More than be that 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets have carried out detailed introduction to a kind of impedance that the embodiment of the invention provided; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. an impedance is 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets; It is characterized in that: it comprises the aluminium nitride substrate of a 5*2.5*1mm; The back up of said aluminium nitride substrate has back of the body conducting shell, and the front of said aluminium nitride substrate is printed with resistance and lead, and said lead connects said resistance and forms load circuit; The earth terminal of said load circuit is electrically connected with said back of the body conducting shell, is printed with glass protection film on the said resistance.
2. impedance according to claim 1 is 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets, and it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
3. impedance according to claim 1 is 50 Ω aluminium nitride ceramics substrates, 20 tile load sheets, and it is characterized in that: said back of the body conducting shell and lead are formed by the conductive silver paste printing, and said resistance is formed by the resistance slurry printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110255822A CN102324605A (en) | 2011-09-01 | 2011-09-01 | Aluminum nitride ceramic substrate 20W loading plate with impedance of 50 omega |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110255822A CN102324605A (en) | 2011-09-01 | 2011-09-01 | Aluminum nitride ceramic substrate 20W loading plate with impedance of 50 omega |
Publications (1)
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|---|---|
| CN102324605A true CN102324605A (en) | 2012-01-18 |
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| CN201110255822A Pending CN102324605A (en) | 2011-09-01 | 2011-09-01 | Aluminum nitride ceramic substrate 20W loading plate with impedance of 50 omega |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241764A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 20 W SMT type load slice |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100872054B1 (en) * | 2008-05-15 | 2008-12-05 | 신계철 | Chip scale package jig separate system |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202259624U (en) * | 2011-09-01 | 2012-05-30 | 苏州市新诚氏电子有限公司 | 20-watt load chip with 50omega impedance of aluminum nitride ceramic substrate |
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2011
- 2011-09-01 CN CN201110255822A patent/CN102324605A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100872054B1 (en) * | 2008-05-15 | 2008-12-05 | 신계철 | Chip scale package jig separate system |
| CN101923928A (en) * | 2010-03-25 | 2010-12-22 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
| CN202259624U (en) * | 2011-09-01 | 2012-05-30 | 苏州市新诚氏电子有限公司 | 20-watt load chip with 50omega impedance of aluminum nitride ceramic substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241764A (en) * | 2014-05-28 | 2014-12-24 | 苏州市新诚氏电子有限公司 | Aluminum nitride ceramic substrate 20 W SMT type load slice |
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Application publication date: 20120118 |