CN102332627A - 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate - Google Patents
20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate Download PDFInfo
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- CN102332627A CN102332627A CN201110205633A CN201110205633A CN102332627A CN 102332627 A CN102332627 A CN 102332627A CN 201110205633 A CN201110205633 A CN 201110205633A CN 201110205633 A CN201110205633 A CN 201110205633A CN 102332627 A CN102332627 A CN 102332627A
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- aluminium nitride
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Abstract
The invention discloses a 20W 20dB attenuation sheet of a high-power aluminum nitride ceramic substrate, which comprises a 5*5*1mm aluminum nitride substrate, wherein a back conduction layer is printed on the back surface of the aluminum nitride substrate, a resistor and a lead are printed on the front face of the aluminum nitride substrate, the lead is connected with the resistor to form an attenuation circuit, the attenuation circuit is symmetrical along the center line of the aluminum nitride substrate, the output end and the input end of the attenuation circuit are respectively connected with a welding pad, and the two welding pads are symmetrical along the center line of the aluminum nitride substrate. According to the attenuation sheet, the resistor area is increased to ensure that high-low-temperature impact resistance property is improved, quenching to the resistor at high temperature when a lead is welded at the output end is avoided, the risk of the damaged attenuation sheet due to the quenched resistor in an actual use process is avoided so that the performance of the attenuation sheet is greatly improved, and the situation that the traditional attenuation sheet can be only applied to low frequency occasions is eliminated so that the attenuation sheet can be applied to 2G-3G networks.
Description
Technical field
The present invention relates to a kind of aluminium nitride ceramics attenuator, the attenuator of 20 watts of 20dB of particularly a kind of high-power aluminium nitride ceramics substrate.
Background technology
Present most of communication base station all is that utilizing high power pottery carrier sheet absorbs reverse input power in the communication component; High-power ceramic carrier sheet can only merely consume the power of absorbing redundant; And can't do real-time monitoring to the working condition of base station; Work can't be made judgement when breaking down in time when the base station, and equipment is not had protective effect.Attenuator not only can absorb the power of reverse input in the communication component in communication base station, and can extract part signal in the communication component, and the base station is monitored in real time, and equipment is had protective effect.
The attenuation accuracy of the aluminium nitride ceramics attenuator of present domestic 20W-20dB can only accomplish that mostly minority can be accomplished 2G in the 1G frequency, and the difficult control of the VSWR of attenuation accuracy and equipment configuration.And market is very high to the requirement of attenuation accuracy, and the attenuator that we hope is a power consumption component, can not be influential to two terminal circuits, that is to say, and all mate with two terminal circuits.When attenuation accuracy or VSWR do not reach when requiring, the signal that output obtains does not meet actual requirement.Attenuator in the market is when using frequency range to be higher than 2G, and its attenuation accuracy does not reach requirement, and it is big that return loss becomes, and has satisfied not the above frequency range application requirements of 2G.
At present domestic 20W-20dB attenuator is because of the reason of design, and attenuation accuracy does not reach requirement, and the anti-high and low-temp impact property is poor, and after accomplishing the high/low-temperature impact experiment, impedance and attenuation accuracy can deflect away from the scope of actual requirement.
Summary of the invention
Deficiency to above-mentioned prior art; The technical problem that the present invention will solve provides a kind of impedance and satisfies 50 ± 1.5 Ω; Is 20 ± 1dB in the 3G frequency range with interior attenuation accuracy; Standing wave requires input in 1.2, and output can satisfy 20 watts of 20dB attenuators of high-power aluminium nitride ceramics substrate of the application requirements of present 3G network in 1.25.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
20 watts of 20dB attenuators of a kind of high-power aluminium nitride ceramics substrate; It comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
Preferably, be printed with glass protection film on the said resistance.
Preferably, the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Technique scheme has following beneficial effect: 20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate are in a state of symmetry fully by attenuator circuit; Make the stability of circuit get a promotion; The client does not need painstakingly differentiation input and output in use simultaneously; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention, understands technological means of the present invention in order can more to know, and can implement according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. specify as after.Embodiment of the present invention is provided by following examples and accompanying drawing thereof in detail.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiments of the present invention are described in detail.
As shown in Figure 1; 20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate comprise the aluminium nitride substrate 1 of a 5*5*1MM; The back up of aluminium nitride substrate 1 has back of the body conducting shell, and the front of aluminium nitride substrate 1 is printed with lead 2 and resistance R 1, R2, R3, and resistance R 1, R2, R3 are connected to form attenuator circuit through lead; Attenuator circuit is electrically connected with back of the body conducting shell through the silver slurry, thereby makes the attenuator circuit earth-continuity.This attenuator circuit is along the center line symmetry of aluminium nitride substrate, and the output of attenuator circuit is connected with a pad 5, and input is connected with a pad 6, and two pads 5,6 are symmetrical along the center line of aluminium nitride substrate.Resistance R 1, R2, the last glass protection film 3 that is printed with of R3, the upper surface of lead 2 and glass protection film 3 also is printed with one deck black protective film 4, can form protection to lead 2 and resistance R 1, R2, R3 like this.
It is 50 ± 1.5 Ω that 20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate require the impedance of input and ground connection, and the impedance of output and ground is 50 ± 1.5 Ω.Signal input part gets into attenuator, through the progressively absorption to power of resistance R 1, R3, R2, exports actual needed signal from output, and the signal that output obtains is approximately one of percentage of input signal.
20 watts of 20dB attenuators of this high-power aluminium nitride ceramics substrate with the aluminium nitride substrate of 5*5*1MM as substrate; Let attenuator circuit be in a state of symmetry fully; Make the stability of circuit get a promotion, the client does not need painstakingly differentiation input and output in use simultaneously, and two pads 5,6 all can be used as input or output; Greatly facilitate the client, also reduced the client aborning because the wrong generation that causes defective products of input/output terminal welding.The resistor area that this design has simultaneously increased as far as possible increases its anti-high and low-temp impact property, has avoided when the output welding lead; High temperature is to the wound of quenching of resistance; Avoided because of the resistance wound of being quenched, the risk that can break down in actual use makes the performance of attenuator be greatly improved; Break the situation that original attenuator can only be applied to low frequency, made attenuator can be applied to the network of 2G-3G.
More than 20 watts of 20dB attenuators of a kind of high-power aluminium nitride ceramics substrate that the embodiment of the invention provided have been carried out detailed introduction; For one of ordinary skill in the art; According to the thought of the embodiment of the invention, the part that on embodiment and range of application, all can change, in sum; This description should not be construed as limitation of the present invention, and all any changes of making according to design philosophy of the present invention are all within protection scope of the present invention.
Claims (3)
1. 20 watts of 20dB attenuators of a high-power aluminium nitride ceramics substrate; It is characterized in that: it comprises the aluminium nitride substrate of a 5*5*1MM; The back up of said aluminium nitride substrate has back of the body conducting shell; The front of said aluminium nitride substrate is printed with lead and resistance, and said lead connects said resistance and is connected to form attenuator circuit, and said attenuator circuit is along the center line symmetry of said aluminium nitride substrate; The output of said attenuator circuit, input are connected with a pad respectively, and said two pads are along the center line symmetry of said aluminium nitride substrate.
2. 20 watts of 20dB attenuators of high-power aluminium nitride ceramics substrate according to claim 1 is characterized in that: be printed with glass protection film on the said resistance.
3. 20 watts of 20dB attenuators of high-power aluminium nitride ceramics substrate according to claim 2, it is characterized in that: the upper surface of said lead and glass protection film also is printed with one deck black protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110205633A CN102332627A (en) | 2011-07-22 | 2011-07-22 | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110205633A CN102332627A (en) | 2011-07-22 | 2011-07-22 | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate |
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| CN102332627A true CN102332627A (en) | 2012-01-25 |
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| CN201110205633A Pending CN102332627A (en) | 2011-07-22 | 2011-07-22 | 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723559A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | Ceramic substrate attenuator |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1155008A (en) * | 1997-08-06 | 1999-02-26 | Hokuriku Electric Ind Co Ltd | Power resistor for high frequency use |
| CN101533693A (en) * | 2009-03-16 | 2009-09-16 | 广州翔宇微电子有限公司 | Microwave film resistor, microwave film resistor network module and manufacturing method thereof |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN202121045U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet |
-
2011
- 2011-07-22 CN CN201110205633A patent/CN102332627A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1155008A (en) * | 1997-08-06 | 1999-02-26 | Hokuriku Electric Ind Co Ltd | Power resistor for high frequency use |
| CN101533693A (en) * | 2009-03-16 | 2009-09-16 | 广州翔宇微电子有限公司 | Microwave film resistor, microwave film resistor network module and manufacturing method thereof |
| CN101859620A (en) * | 2009-04-08 | 2010-10-13 | 深圳市信特科技有限公司 | Manufacturing method of high-frequency high-power resistor |
| CN201478422U (en) * | 2009-07-02 | 2010-05-19 | 深圳市禹龙通电子有限公司 | Aluminum nitride attenuation sheet |
| CN202121045U (en) * | 2011-07-22 | 2012-01-18 | 苏州市新诚氏电子有限公司 | Large power aluminium nitride ceramic substrate 20 watt 20dB attenuation sheet |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102723559A (en) * | 2012-06-28 | 2012-10-10 | 苏州市新诚氏电子有限公司 | Ceramic substrate attenuator |
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Application publication date: 20120125 |