CN102314978A - High-performance thin film resistor and preparation method thereof - Google Patents
High-performance thin film resistor and preparation method thereof Download PDFInfo
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- CN102314978A CN102314978A CN 201110172418 CN201110172418A CN102314978A CN 102314978 A CN102314978 A CN 102314978A CN 201110172418 CN201110172418 CN 201110172418 CN 201110172418 A CN201110172418 A CN 201110172418A CN 102314978 A CN102314978 A CN 102314978A
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Abstract
The invention discloses a high-performance thin film resistor and a preparation method thereof. The high-performance thin film resistor comprises an insulation substrate which is provided with resistor thin films; the two sides of each resistor thin film are provided with extraction electrodes; the top surfaces of the edges at the two sides of each resistor thin film are provided with top electrodes; and the top surface of each resistor thin film and the top surfaces of the top electrodes are provided with insulation protection films. According to the invention, the thin film resistor is prepared in a mode of the combination of a mask technology and a deposition process, the method is easy for industrialization, the adhesive force among all layers of the obtained product is high, the quality is good; and metal with good chemical stability is taken as the material of the thin film resistor so as to improve the corrosion resistance and heat stability of the resistor material, thus the thin film resistor can be used in severe environments, such as high frequency, high temperature, high voltage, low temperature, outer space and the like, and can be applied to numerous high-tech fields, and the application range of the thin film resistor is expanded.
Description
Technical field
The present invention relates to a kind of electronic component and preparation method thereof, especially a kind of film resistor and manufacturing approach thereof.
Background technology
The specific area of film resistor is big, and perfect heat-dissipating can be born bigger power.Film and dielectric base adhesive ability are strong, and shock resistance is good, have than the better stability of conventional, electric-resistance.Have only external a few producer can carry out the batch process of film resistor at present, be in monopoly position in high-quality thin film resistance production technical field abroad, correlation technique is in confidential state.Along with Chinese economic development, the domestic market is increasing to the demand of base electronic components and parts, relies on the mode of import to be difficult to satisfy the demand of domestic market, and the imported product price is high, has strengthened the cost of product; Problems such as that general besides resistance material exists is perishable, poor heat stability cause its scope of application to be restricted.
Summary of the invention
The objective of the invention is: a kind of high performance thin film resistance and manufacturing approach thereof are provided, and its manufacturing approach is simple, be easy to industrialization, resulting properties of product are outstanding, to overcome the deficiency of prior art.
The present invention is achieved in that high performance thin film resistance; Comprise insulated substrate; On insulated substrate, be provided with resistance film; Both sides at each resistance film are provided with extraction electrode, and the end face in each resistance film both sides of the edge is provided with top electrodes, on the end face of the end face of resistance film and top electrodes, are provided with insulating protective film.The length of insulated substrate is more than or equal to the ultimate range between the extraction electrode of both sides, so that extraction electrode is connected with outer member.
The material of insulated substrate is aluminium oxide, aluminium nitride or silicon dioxide.
The material of resistance film is one or more combination or their doping system in tantalum nitride, titanium nitride, nitrided iron, nichrome or the silicochromium.
The material of electrode is tantalum (Ta), and niobium (Nb), lithium (Ni), copper (Cu), silver (Ag), golden Au be one or more combination or alloy wherein.The material that it is good that resistance film and electrode are all selected chemical stability for use is made.
The material of insulating protective film is silicon dioxide or silicon nitride.
The thickness of resistance film, electrode and insulating protective film is respectively 0.5～1.5 μ m.
The manufacturing approach of high performance thin film resistance; Utilize masking process on insulated substrate, to deposit more than one resistance film earlier; Utilize masking process on the end face of the both sides of each resistance film and both sides of the edge, to deposit extraction electrode and top electrodes respectively again; Utilize masking process on the end face of the end face of resistance film and top electrodes, to deposit insulating protective film at last, obtain finished product after cutting packing.
Above-mentioned sedimentation all adopts physical vaporous deposition or chemical vapour deposition technique.Because all making, each deposition procedures adopt vapour deposition process to carry out; Therefore, the thickness of each layer of product that is obtained is little, strong adhesion, good stability of products, compares with traditional thick film production technology; It not only more helps industrialization, and has improved the scope of application of product greatly.
After depositing electrode, semi-finished product were heat-treated under 650～750 ° condition 25～35 minutes.Eliminate the defective of semi-finished product film, improve device performance.
After depositing electrode, adopt the mode of laser resistor trimming, half-finished resistance is regulated, make its resistance arrive the Standard resistance range that the target resistance requires.Under the situation of resistance less than the resistance of target resistance of semi-finished product film resistor,, can carry out repeatedly resistance trimming repeatedly according to measuring feedback result; The regulated quantity of resistance and resistance film split position, the shape of not participating in conducting that are partitioned into are relevant with the factors such as conducting cross-sectional sizes that are not separated the subparticipation conducting membrane; Through behind the resistance trimming, can guarantee the stability of product quality.
Tantalum nitride hardness height, fusing point high (3090 ℃), stable chemical performance, corrosion-resistant, heat-resisting and shock-resistant ability is strong.Tantalum nitride membrane also has good electric property; Good thermal stability, lower advantages such as temperature coefficient of resistance, thereby tantalum nitride membrane resistance also has low temperature coefficient of resistance; Can under extraordinary conditions such as high temperature or low temperature, use, have long-term stability.Adopt the tantalum nitride and the high stability metal electrode of high stability to combine; Problems such as perishable, the poor heat stability that can solve that general resistance material exists; Can under like adverse circumstances such as high frequency, high temperature, high pressure, low temperature and spaces, use, industrialization is produced this thin film resistor element and is had important practical significance.Therefore, the utilization tantalum nitride can make it can be used in numerous high-tech areas as the material of film resistor.Material that other chemical stability is also stronger such as titanium nitride, nitrided iron, nichrome and silicochromium etc. also can be used as the material of film resistor, play similar effects; And corresponding, the material of electrode then can select for use higher metal of Ta, Nb, Ni, Cu, Ag and Au equistability or their alloy to make.
Sapphire, be in the sapphire except that red ruby, the common name of other color sapphire, main component is aluminium oxide (Al
2O
3).Blue sapphire is owing to wherein be mixed with due to little amount of titanium (Ti) and iron (Fe) impurity; Sapphire color can have pink, yellow, green, white even at same coccolith multiple color arranged.The sapphire place of production is in Thailand, Sri Lanka, Madagascar, Laos, Cambodia, and the wherein the rarest place of production should belong to the sapphire in area, Kashmir, and Burma produces the maximum place of first-class sapphire now.In this invention, also can replace with common alumina insulation substrate.
Magnetron sputtering method is to charge into an amount of argon gas in high vacuum, between negative electrode (Style Columu Talget or flat target) and anode (plated film locular wall), applies hundreds of K direct voltage, in coating chamber, produces magnet controlled abnormal glow discharge, makes argon gas generation ionization.Argon ion is quickened by negative electrode and bombarding cathode target surface, the target material surface atom sputtering is come out to be deposited on form film on the substrate surface.Through the target of the changing unlike material sputtering time different, just can obtain the film of unlike material and different-thickness with control.Advantages such as the adhesion that magnetron sputtering method has coatings and base material is strong, coatings is fine and close, even.
PECVD (Plasma Enhanced Chemical Vapor Deposition) plasma enhanced chemical vapor deposition; Be to make the gas ionization that contains the film composed atom by microwave or radio frequency etc.; Form plasma in the part; And the plasma chemical activity is very strong, is easy to react, and on substrate, deposits desired film.For chemical reaction can be carried out under lower temperature, utilized the activity of plasma to promote reaction, thereby this CVD is called plasma enhanced chemical vapor deposition (PECVD).
Owing to adopted above-mentioned technical scheme; Compared with prior art; The mode that the present invention adopts masking process to combine with sedimentation prepares film resistor, and this method is produced film resistor and is easy to industrialization, and strong adhesion, quality between each layer of product that is obtained are good; Adopted also that chemical stability is good, metal nitride, nichrome or the silicochromium of low-temperature coefficient be as the material of film resistor; Can improve the corrosion resistance of resistance material and the thermal stability of resistance; It can be used under like adverse circumstances such as high frequency, high temperature, high pressure, low temperature and spaces; Can be used in numerous high-tech areas, expand its scope of application.Method of the present invention is simple, implements easily, and product quality stability is good, and is applied widely, and result of use is good.
Description of drawings
Fig. 1 is the structure chart of film resistor of the present invention;
1, metal electrode;
2, insulating protective film;
3, resistance film;
4, insulated substrate;
5, top electrodes.
Embodiment
Embodiments of the invention 1: the structure of high performance thin film resistance is as shown in Figure 1; Comprise that sapphire goes out insulated substrate 4 as material; On insulated substrate 4, adopt tantalum nitride to produce the resistance film 3 that thickness is 1 μ m; Be provided with extraction electrode 1 in the both sides of each resistance film 3, the end face in each resistance film 3 both sides of the edge is provided with top electrodes 5, and the manufacturing materials of extraction electrode 1 and top electrodes 5 is tantalum; Their thickness is 1 μ m, and on the end face of the end face of resistance film 3 and top electrodes 5, being provided with and adopting silicon dioxide is the insulating protective film 2 of 0.5 μ m as the thickness of material made.
The manufacturing approach of high performance thin film resistance, the mask that will be used to deposit resistance film is laid on clean sapphire insulated substrate 4, utilizes magnetron sputtering method that tantalum nitride is deposited resistance film 3 as material on insulated substrate 4; The mask that will be used for depositing electrode 1 again is laid on the semi-finished product that deposit resistance film 3; Utilize magnetron sputtering method that tantalum is deposited extraction electrode 1 and top electrodes 5 as material on these semi-finished product; Electrode 1 and top electrodes 5 are one-time formed when deposition, and are connected as a single entity; The semi-finished product that will deposit electrode then heat treatment 30 minutes under 700 ℃ condition is treated to carry out laser resistor trimming after its cooling, reaches the Standard resistance range that the target resistance requires up to it; At last, the mask that will be used to deposit insulating protective film is laid on the semi-finished product through above-mentioned processing, adopts the PECVD method that silicon dioxide is deposited insulating protective film 2 as material on the semi-finished product of a last step; The product that deposition procedures is finished cuts, and obtains single film resistor, with obtaining finished product after their packing.
Embodiments of the invention 2: the structure of high performance thin film resistance is as shown in Figure 1; Comprise that common aluminium oxide goes out insulated substrate 4 as material; On insulated substrate 4, adopt nichrome to produce the resistance film 3 that thickness is 0.5 μ m; Be provided with extraction electrode 1 in the both sides of each resistance film 3, the end face in each resistance film 3 both sides of the edge is provided with top electrodes 5, and the manufacturing materials of extraction electrode 1 and top electrodes 5 is copper; Their thickness is 0.5 μ m, and on the end face of the end face of resistance film 3 and top electrodes 5, being provided with and adopting silicon nitride is the insulating protective film 2 of 1 μ m as the thickness of material made.
The manufacturing approach of high performance thin film resistance, the mask that will be used to deposit resistance film is laid on clean alumina insulation substrate 4, utilizes magnetron sputtering method that nichrome is deposited resistance film 3 as material on insulated substrate 4; The plastics mask that will be used for depositing electrode 1 again is laid on the semi-finished product that deposit resistance film 3, utilizes magnetron sputtering method that copper is deposited extraction electrode 1 and top electrodes 5 as material on these semi-finished product; The semi-finished product that will deposit electrode then heat treatment 35 minutes under 650 ℃ condition; The mask of treating will to be used to deposit after its cooling insulating protective film is laid on the semi-finished product through above-mentioned processing, adopts the PECVD method that silicon nitride is deposited insulating protective film 2 as material on the semi-finished product of a last step; The product that deposition procedures is finished cuts, and obtains single film resistor, with obtaining finished product after their packing.
Embodiments of the invention 3: the structure of high performance thin film resistance is as shown in Figure 1; Comprise that silicon dioxide goes out insulated substrate 4 as material; On insulated substrate 4, producing thickness with the combination of nitrided iron and nichrome is that the composite bed of 1.5 μ m is as resistance film 3; Be provided with extraction electrode 1 in the both sides of each resistance film 3, the end face in each resistance film 3 both sides of the edge is provided with top electrodes 5, and the manufacturing materials of extraction electrode 1 and top electrodes 5 is the Nb-Ag alloy; Their thickness is 1.5 μ m, and on the end face of the end face of resistance film 3 and top electrodes 5, being provided with and adopting silicon nitride is the insulating protective film 2 of 1.2 μ m as the thickness of material made.
The manufacturing approach of high performance thin film resistance, the mask that will be used to deposit resistance film is laid on clean silicon dioxide insulator substrate 4, utilizes magnetron sputtering method that the combination of nitrided iron and nichrome is deposited resistance film 3 as material on insulated substrate 4; The plastics mask that will be used for depositing electrode 1 again is laid on the semi-finished product that deposit resistance film 3, utilizes magnetron sputtering method that the Nb-Ag alloy is deposited extraction electrode 1 and top electrodes 5 as material on these semi-finished product; The mask that will be used to deposit insulating protective film at last is laid on the semi-finished product through above-mentioned processing, adopts the PECVD method that silicon nitride is deposited insulating protective film 2 as material on the semi-finished product of a last step; The product that deposition procedures is finished cuts, and obtains single film resistor, with obtaining finished product after their packing.
Selecting for use of vapor phase deposition method can be selected according to needs of production, and the foregoing description only with magnetron sputtering method and PECVD method as an example, also can be selected mocvd method to wait as required and deposit.
Claims (10)
1. high performance thin film resistance; Comprise insulated substrate (4); It is characterized in that: on insulated substrate (4), be provided with resistance film (3); Be provided with extraction electrode (1) in the both sides of each resistance film (3), the end face in each resistance film (3) both sides of the edge is provided with top electrodes (5), on the end face of the end face of resistance film (3) and top electrodes (5), is provided with insulating protective film (2).
2. high performance thin film resistance according to claim 1 is characterized in that: the material of insulated substrate (4) is aluminium oxide, aluminium nitride or silicon dioxide.
3. high performance thin film resistance according to claim 1 is characterized in that: the material of resistance film (3) is one or more combination or their doping system in tantalum nitride, titanium nitride, nitrided iron, nichrome or the silicochromium.
4. high performance thin film resistance according to claim 1 is characterized in that: the material of electrode (1) is a tantalum, and niobium, lithium, copper, silver, gold be one or more combination or alloy wherein.
5. high performance thin film resistance according to claim 1 is characterized in that: the material of insulating protective film (2) is silicon dioxide or silicon nitride.
6. high performance thin film resistance according to claim 1 is characterized in that: the thickness of resistance film (3), electrode (1) and insulating protective film (2) is respectively 0.5～1.5 μ m.
7. the manufacturing approach of a high performance thin film resistance is characterized in that: utilize masking process on insulated substrate, to deposit more than one resistance film earlier; Utilize masking process on the end face of the both sides of each resistance film and both sides of the edge, to deposit extraction electrode and top electrodes respectively again; Utilize masking process on the end face of the end face of resistance film and top electrodes, to deposit insulating protective film at last; Obtain finished product after cutting packing.
8. the manufacturing approach of high performance thin film resistance according to claim 7 is characterized in that: above-mentioned sedimentation all adopts physical vaporous deposition or chemical vapour deposition technique.
9. the manufacturing approach of high performance thin film resistance according to claim 7 is characterized in that: after depositing electrode, semi-finished product were heat-treated under 650～750 ° condition 25～35 minutes.
10. the manufacturing approach of high performance thin film resistance according to claim 7 is characterized in that: after depositing electrode, adopt the mode of laser resistor trimming, half-finished resistance is regulated, make its resistance arrive the Standard resistance range that the target resistance requires.
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| CN 201110172418 CN102314978A (en) | 2011-06-24 | 2011-06-24 | High-performance thin film resistor and preparation method thereof |
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| CN 201110172418 CN102314978A (en) | 2011-06-24 | 2011-06-24 | High-performance thin film resistor and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325507A (en) * | 2013-06-21 | 2013-09-25 | 广州天极电子科技有限公司 | High-stability film resistor and manufacturing method thereof |
| CN103714927A (en) * | 2012-10-08 | 2014-04-09 | 美国亚德诺半导体公司 | Method of forming a thin film resistor |
| CN103971868A (en) * | 2014-05-29 | 2014-08-06 | 昆山福烨电子有限公司 | Novel thin-film resistor |
| CN106148895A (en) * | 2015-04-27 | 2016-11-23 | 中国振华集团云科电子有限公司 | A kind of manufacture method of the low-resistance protective layer of chip thin film fixed resister |
| CN108513378A (en) * | 2018-03-14 | 2018-09-07 | 电子科技大学 | A kind of thin resistive heater and preparation method thereof |
| CN110520943A (en) * | 2017-04-21 | 2019-11-29 | Tdk电子股份有限公司 | Film resistor and thin film sensor |
| CN110993228A (en) * | 2019-12-25 | 2020-04-10 | 株洲宏达电通科技有限公司 | Preparation method of high-power chip type full-thin-film fixed resistor |
| CN112038026A (en) * | 2020-08-27 | 2020-12-04 | 贝迪斯电子有限公司 | Chip type thin film resistor network |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1497583A (en) * | 1975-11-18 | 1978-01-12 | Standard Telephones Cables Ltd | Thin film circuits |
| CN1581370A (en) * | 2003-07-31 | 2005-02-16 | 大毅科技股份有限公司 | Method for manufacturing film resistance |
| TW200828349A (en) * | 2006-12-22 | 2008-07-01 | Viking Tech Corp | Method for the manufacture of resistor with electric current induction chip |
-
2011
- 2011-06-24 CN CN 201110172418 patent/CN102314978A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1497583A (en) * | 1975-11-18 | 1978-01-12 | Standard Telephones Cables Ltd | Thin film circuits |
| CN1581370A (en) * | 2003-07-31 | 2005-02-16 | 大毅科技股份有限公司 | Method for manufacturing film resistance |
| TW200828349A (en) * | 2006-12-22 | 2008-07-01 | Viking Tech Corp | Method for the manufacture of resistor with electric current induction chip |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103714927A (en) * | 2012-10-08 | 2014-04-09 | 美国亚德诺半导体公司 | Method of forming a thin film resistor |
| US9963777B2 (en) | 2012-10-08 | 2018-05-08 | Analog Devices, Inc. | Methods of forming a thin film resistor |
| CN103325507A (en) * | 2013-06-21 | 2013-09-25 | 广州天极电子科技有限公司 | High-stability film resistor and manufacturing method thereof |
| CN103971868A (en) * | 2014-05-29 | 2014-08-06 | 昆山福烨电子有限公司 | Novel thin-film resistor |
| CN106148895A (en) * | 2015-04-27 | 2016-11-23 | 中国振华集团云科电子有限公司 | A kind of manufacture method of the low-resistance protective layer of chip thin film fixed resister |
| CN110520943A (en) * | 2017-04-21 | 2019-11-29 | Tdk电子股份有限公司 | Film resistor and thin film sensor |
| US11177059B2 (en) | 2017-04-21 | 2021-11-16 | Tdk Electronics Ag | Film resistor and thin-film sensor |
| CN108513378A (en) * | 2018-03-14 | 2018-09-07 | 电子科技大学 | A kind of thin resistive heater and preparation method thereof |
| CN110993228A (en) * | 2019-12-25 | 2020-04-10 | 株洲宏达电通科技有限公司 | Preparation method of high-power chip type full-thin-film fixed resistor |
| CN112038026A (en) * | 2020-08-27 | 2020-12-04 | 贝迪斯电子有限公司 | Chip type thin film resistor network |
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Application publication date: 20120111 |