CN112038026A - Chip type thin film resistor network - Google Patents
Chip type thin film resistor network Download PDFInfo
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- CN112038026A CN112038026A CN202010875771.0A CN202010875771A CN112038026A CN 112038026 A CN112038026 A CN 112038026A CN 202010875771 A CN202010875771 A CN 202010875771A CN 112038026 A CN112038026 A CN 112038026A
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- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 239000010410 layer Substances 0.000 claims abstract description 107
- 239000010408 film Substances 0.000 claims abstract description 42
- 238000002161 passivation Methods 0.000 claims abstract description 28
- 239000002344 surface layer Substances 0.000 claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 10
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000010931 gold Substances 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000004073 vulcanization Methods 0.000 abstract description 13
- 238000001259 photo etching Methods 0.000 description 8
- 229910052946 acanthite Inorganic materials 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 6
- 229940056910 silver sulfide Drugs 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical group [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/16—Resistor networks not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/003—Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/23—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by opening or closing resistor geometric tracks of predetermined resistive values, e.g. snapistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/232—Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/288—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thin film techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention belongs to the technical field of chip type thin film resistors, and particularly relates to a chip type thin film resistor network which comprises a ceramic substrate, wherein a resistor is sputtered on the front surface of the ceramic substrateThe resistance film layer is cut into a plurality of resistance units by laser scribing, two front electrodes are arranged on the surface of each resistance unit, each front electrode comprises a barrier layer, an electrode bottom layer and an electrode surface layer from bottom to top, and a passivation layer is arranged on the part, located between the front electrodes, of the surface of each resistance unit. Compared with the prior art, the invention has the following advantages: the sputtering tungsten titanium film layer is used as a barrier layer, so that the stability of the front electrode can be protected, and the vulcanization phenomenon is avoided; the conditions of the processing process are controllable, the absolute precision of the resistor individual of the obtained chip type thin film resistor network reaches +/-0.05 percent, and the temperature coefficient reaches +/-5 multiplied by 10‑6The relative temperature coefficient reaches +/-2 multiplied by 10‑6and/K, the relative precision reaches +/-0.02%.
Description
Technical Field
The invention belongs to the technical field of chip thin film resistors, and particularly relates to a chip thin film resistor network.
Background
The film chip resistor is a new generation chip resistor which is developed most rapidly, has the widest application range and has the best prospect in recent years, and the enterprise of foreign materials starts to produce in batches several years ago, and only very individual manufacturers can produce the product in continental period at present, compared with the film chip resistor, the main component of the resistance film layer of the film chip resistor is nickel-chromium alloy, the precision of the resistance value can reach +/-0.5 percent through precise processing and post-treatment, the temperature coefficient can reach +/-5 ppm/DEG C, and the stability can reach 0.02 percent, so that the film chip resistor is an ideal product for replacing a low-precision film chip resistor and a traditional high-precision and high-stability columnar resistor with a lead wire; the resistance of the resistor changes along with the temperature change, the resistor network usually requires the resistor to have higher precision and small temperature coefficient, and particularly requires the resistance value deviation consistency of each resistor to be good, namely the matching precision is high; the resistance-temperature characteristics of all resistors are good, namely the tracking temperature coefficient is small; the discrete resistors cannot be manufactured under the same strict process conditions and the same resistance material, and the temperature coefficients of the resistors are different greatly even if the resistors are manufactured in the same batch, for example, the temperature coefficient of one batch of resistors is +/-5 ppm/DEG C, two component voltage dividers are arbitrarily taken out from the batch of resistors, the tracking temperature coefficient of the two component voltage dividers can reach 10 ppm/DEG C at most, because one of the resistors is +/-5 ppm/DEG C and the other resistor is-5 ppm/DEG C, the resistance network formed by the discrete resistors cannot meet the requirements, and therefore, the resistors in the network are manufactured on the same substrate by the same material and process at the same time, and because the same substrate is adopted, and the used material and the process are not same as each otherThe process has strict consistency, so that the temperature characteristic consistency of each resistor in the network is good, but even if the temperature characteristic consistency is good, the relative temperature coefficient of the existing resistor network can only reach +/-5 multiplied by 10 due to the limitation of processing conditions in the processing process-6and/K, the use requirements of special customers cannot be met, so that research needs to be carried out on how to improve the relative temperature coefficient of the resistor network.
Disclosure of Invention
The invention aims to provide a chip type thin film resistor network aiming at the problem that the relative temperature coefficient of the existing thin film resistor network cannot meet the use requirement.
The invention is realized by the following technical scheme: a chip thin film resistor network comprises a ceramic substrate, wherein a resistor film layer is sputtered on the front surface of the ceramic substrate and is a nickel-chromium alloy film, the resistor film layer is cut into a plurality of resistor individuals by laser scribing, the surface of each resistor individual is provided with two front electrodes which are arranged in pairs and separated from each other, the front electrodes comprise a barrier layer, an electrode bottom layer and an electrode surface layer from bottom to top, and the part of the surface of each resistor individual positioned between the front electrodes is provided with a passivation layer;
the barrier layer is a sputtering tungsten titanium film layer, the bottom layer of the electrode is a sputtering gold layer, and the surface layer of the electrode is an electroplating gold layer; the thickness sum of the bottom layer and the surface layer of the electrode is not less than 3 mu m, and the thickness of the sputtering gold layer is less than 1 mu m;
the passivation layer is obtained by evaporating silicon dioxide through electron beams, and the thickness of the passivation layer is not less than 1 mu m.
A manufacturing method of a sheet type thin film resistor network comprises the following steps:
s1, on the premise of knowing the target resistance value of the chip thin film resistor network, designing the ceramic substrate provided with the resistance film layer to obtain a plurality of resistor network units consisting of a plurality of resistor individuals, namely the chip thin film resistor network; specifically designing the graphs, positions and sizes of individual resistors and corresponding electrodes in the chip thin film resistor network, and calculating the initial sheet resistance of the resistor network unit to enable the obtained initial sheet resistance to be close to a target resistance value;
s2 scribing with laserSetting conditions as follows: 50W of power, 150mm/s of speed and 4000H of frequencyZCutting out the required resistance network unit according to the design in S1;
s3, adopting the sputtering coating process, wherein the film system sputtered on the ceramic substrate sequentially is nickel chromium, tungsten titanium and gold, the sputtering power is set to be 800W, and the vacuum degree is set to be 4-6 multiplied by 10-6The time is 30-90 minutes (adjusted according to the target resistance value), wherein nickel-chromium is used as a resistance film layer, tungsten-titanium is used as a barrier layer, gold is used as an electrode bottom layer, and the thickness of the electrode bottom layer is less than 1 mu m;
s4, processing an electrode surface layer on the surface of the electrode bottom layer by adopting an electrogilding process, wherein the sum of the thicknesses of the electrode bottom layer and the electrode surface layer is more than or equal to 3 um;
s5, carrying out photoetching according to the design scheme in the step S1, wherein the photoetching process comprises the following steps: photoresist homogenizing, prebaking, exposing, developing, film hardening, etching and photoresist removing, wherein errors of figures, positions and sizes of resistor individuals and electrodes obtained by photoetching are less than or equal to 5 microns, and a semi-processed piece of the sheet type thin film resistor is obtained;
s6, adopting electron beam to evaporate silicon dioxide, and carrying out passivation protection on the surface of the semi-processed piece of the sheet type thin film resistor under the passivation conditions: vacuum degree of 4-6X 10-6K, heating at the temperature of 300 +/-10 ℃ for 30 minutes, at an evaporation speed of 20A/s and at an oxygen content of 15mL/min to obtain a silicon dioxide film layer; the thickness of the obtained silicon dioxide film layer is more than or equal to 1 um;
s7, photoetching again to remove the silicon dioxide film layer outside the design, arranging a passivation layer on the part of the surface of the resistor individual body between the front electrodes, and ensuring that the edge of the passivation layer covers 20 microns of the front electrodes; after the passivation layer is obtained, stabilizing treatment is carried out on the passivation layer, and the treatment conditions are as follows: the temperature is 290-400 ℃, and the time is 2-4 hours; while adjusting the absolute temperature coefficient to + -5 × 10-6/K；
S8, the chip type thin film resistor network sequentially carries out rough adjustment and fine adjustment on the initial resistance value in a laser interruption mode, the relative accuracy of the resistor individual reaches +/-0.05% after rough adjustment, then heat treatment is carried out at 170 ℃ for 96 hours, fine adjustment is carried out after internal stress of the resistor is eliminated, and meanwhile the relative accuracy of the resistor individual is adjusted to +/-0.02%;
and S9, using a slitter and a granulator to obtain an individual resistance network unit by splitting, namely obtaining the sheet type thin film resistance network.
It should be noted that different resistor individuals in one resistor network unit have various resistances or various resistances with large span, and because the relative precision reaches a high level, the relative precision of the resistors of different resistor individuals can be consistent under the environment of simultaneous temperature change; the chip thin film resistor network is bonded to the circuit board through a gold bonding wire, and the resistor individual and the front electrode are arranged on the same surface of the ceramic substrate.
The electrode of the existing film resistor is made of Ag/Pd slurry, the content of palladium is about 0.5%, because a trace gap is formed between the secondary protective layer and the welding end, when the air contains a large amount of sulfurated gas, the sulfurated gas can be along the gap and the inner electrode foundation, silver is vulcanized into silver sulfide, because the silver sulfide is not conductive, the resistance value is gradually increased along with the vulcanization of the electrode, and finally the silver sulfide becomes an open circuit, so that the resistor fails; in order to avoid the electrode vulcanization, the secondary protection is covered outside the bottom electrode by improving the design of a secondary protection coating layer, so that trace gaps can be reduced, but the vulcanization speed is only slowed down, and the vulcanization prevention cannot be completely realized; the product of the invention has higher requirement, the bottom layer and the surface layer of the electrode are both gold layers, and the vulcanization phenomenon can be effectively avoided by matching with the reasonable arrangement of the barrier layer.
Compared with the prior art, the invention has the following advantages: the sputtering tungsten titanium film layer is used as a barrier layer, so that the stability of the front electrode can be protected, and the vulcanization phenomenon is avoided; the edge of the passivation layer covers the front electrode by 20 microns, so that the surface layer of the electrode can be effectively protected, and the product is more stable;
the front electrode is provided with an electrode bottom layer and an electrode surface layer besides the barrier layer, the electrode bottom layer and the electrode surface layer are arranged through different processing modes, the compactness and the firmness of the electrode bottom layer are guaranteed through sputtering, the electrode surface layer can be stably combined with the electrode bottom layer on the basis of the arrangement of the electrode bottom layer, the thickness of the front electrode can be effectively controlled, and the stability of the chip type thin film resistance network bonded to a circuit board through a gold bonding wire is further guaranteed;
after the passivation layer is obtained, the passivation layer is subjected to stabilization treatment, so that the stable adjustment of the absolute stability coefficient of the adjusting sheet type thin film resistor network can be realized; the damage to the film layer is reduced by adopting a laser interruption mode, and the heat treatment is carried out under specific conditions after the rough adjustment, so that the internal stress of the resistor individual can be eliminated, and the stability during the fine adjustment is ensured;
the absolute accuracy of the resistor of the obtained chip thin film resistor network reaches +/-0.05%, and the temperature coefficient reaches +/-5 multiplied by 10-6The relative temperature coefficient reaches +/-2 multiplied by 10-6and/K, the relative precision reaches +/-0.02%.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a front view of a chip thin film resistor network.
Fig. 3 is a schematic diagram of a partial structure of a chip thin film resistor network.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1-3, a chip-type thin-film resistor network includes a ceramic substrate 1, a resistor film layer 2 is sputtered on a front surface of the ceramic substrate 1, the resistor film layer 2 is a nichrome film, the resistor film layer 2 is cut into a plurality of resistor individuals (e.g., two resistor individuals in fig. 1) by laser scribing, two front electrodes 4 arranged in pairs and separated from each other are disposed on a surface of each resistor individual, the front electrodes 4 include a barrier layer 41, an electrode bottom layer 42 and an electrode surface layer 43 from bottom to top, and a passivation layer 3 is disposed on a portion of the surface of each resistor individual located between the front electrodes 4;
the barrier layer 41 is a sputtering tungsten titanium film layer, the electrode bottom layer 42 is a sputtering gold layer, and the electrode surface layer 43 is an electrogilding layer; the thickness sum of the electrode bottom layer 42 and the electrode surface layer 43 is not less than 3 mu m, and the thickness of the sputtering gold layer is less than 1 mu m;
the passivation layer 3 is obtained by evaporating silicon dioxide through electron beams, and the thickness of the passivation layer 3 is not less than 1 mu m.
A manufacturing method of a sheet type thin film resistor network comprises the following steps:
s1, on the premise of knowing the target resistance value of the chip type thin film resistor network, designing the ceramic substrate 1 provided with the resistor film layer 2 to obtain a plurality of resistor network units consisting of a plurality of resistor individuals, namely the chip type thin film resistor network; specifically designing the graphs, positions and sizes of individual resistors and corresponding electrodes in the chip thin film resistor network, and calculating the initial sheet resistance of the resistor network unit to enable the obtained initial sheet resistance to be close to a target resistance value;
s2, adopting laser scribing, and setting conditions as follows: 50W of power, 150mm/s of speed and 4000H of frequencyZCutting out the required resistance network unit according to the design in S1;
s3, adopting the sputtering coating process, wherein the film system sputtered on the ceramic substrate sequentially is nickel chromium, tungsten titanium and gold, the sputtering power is set to be 800W, and the vacuum degree is set to be 4-6 multiplied by 10-6The time is 30-90 minutes (adjusted according to the target resistance value), wherein nickel and chromium are used as the resistance film layer 2, tungsten and titanium are used as the barrier layer 41, and gold is used as the electrode bottom layer 42, wherein the thickness of the electrode bottom layer 42 is less than 1 mu m;
s4, processing the electrode surface layer 43 on the surface of the electrode bottom layer 42 by adopting an electrogilding process, wherein the sum of the thicknesses of the electrode bottom layer 42 and the electrode surface layer 43 is more than or equal to 3 um;
s5, carrying out photoetching according to the design scheme in the step S1, wherein the photoetching process comprises the following steps: photoresist homogenizing, prebaking, exposing, developing, film hardening, etching and photoresist removing, wherein errors of figures, positions and sizes of resistor individuals and electrodes obtained by photoetching are less than or equal to 5 microns, and a semi-processed piece of the sheet type thin film resistor is obtained;
s6, adopting electron beam to evaporate silicon dioxide, and carrying out passivation protection on the surface of the semi-processed piece of the sheet type thin film resistor under the passivation conditions: vacuum degree of 4-6X 10-6Heat,/kBaking at 300 +/-10 ℃ for 30 minutes at an evaporation speed of 20 angstrom/s and an oxygen content of 15mL/min to obtain a silicon dioxide film layer; the thickness of the obtained silicon dioxide film layer is more than or equal to 1 um;
s7, removing the silicon dioxide film layer outside the design by photoetching again, enabling the passivation layer 3 to be arranged on the part, located between the front electrodes, of the surface of the resistor individual, and ensuring that the edge 31 (shown in figure 3) of the passivation layer covers 20 microns of the front electrodes; after the passivation layer 3 is obtained, stabilizing treatment is carried out on the passivation layer, wherein the treatment conditions are as follows: the temperature is 290-400 ℃, and the time is 2-4 hours; while adjusting the absolute temperature coefficient to + -5 × 10-6/K；
S8, the chip type thin film resistor network sequentially carries out rough adjustment and fine adjustment on the initial resistance value in a laser interruption mode, the relative accuracy of the resistor individual reaches +/-0.05% after rough adjustment, then heat treatment is carried out at 170 ℃ for 96 hours, fine adjustment is carried out after internal stress of the resistor is eliminated, and meanwhile the relative accuracy of the resistor individual is adjusted to +/-0.02%;
and S9, using a slitter and a granulator to obtain an individual resistance network unit by splitting, namely obtaining the sheet type thin film resistance network.
It should be noted that different resistor individuals in one resistor network unit have various resistances or various resistances with large span, and because the relative precision reaches a high level, the relative precision of the resistors of different resistor individuals can be consistent under the environment of simultaneous temperature change; the chip thin film resistor network is bonded to the circuit board through a gold bonding wire, and the resistor individual and the front electrode are arranged on the same surface of the ceramic substrate.
The electrode of the existing film resistor is made of Ag/Pd slurry, the content of palladium is about 0.5%, because a trace gap is formed between the secondary protective layer and the welding end, when the air contains a large amount of sulfurated gas, the sulfurated gas can be along the gap and the inner electrode foundation, silver is vulcanized into silver sulfide, because the silver sulfide is not conductive, the resistance value is gradually increased along with the vulcanization of the electrode, and finally the silver sulfide becomes an open circuit, so that the resistor fails; in order to avoid the electrode vulcanization, the secondary protection is covered outside the bottom electrode by improving the design of a secondary protection coating layer, so that trace gaps can be reduced, but the vulcanization speed is only slowed down, and the vulcanization prevention cannot be completely realized; the product of the invention has higher requirement, the bottom layer and the surface layer of the electrode are both gold layers, and the vulcanization phenomenon can be effectively avoided by matching with the reasonable arrangement of the barrier layer.
The sputtering tungsten titanium film layer is used as a barrier layer, so that the stability of the front electrode can be protected, and the vulcanization phenomenon is avoided; the edge of the passivation layer covers the front electrode by 20 microns, so that the surface layer of the electrode can be effectively protected, and the product is more stable;
the front electrode is provided with an electrode bottom layer and an electrode surface layer besides the barrier layer, the electrode bottom layer and the electrode surface layer are arranged through different processing modes, the compactness and the firmness of the electrode bottom layer are guaranteed through sputtering, the electrode surface layer can be stably combined with the electrode bottom layer on the basis of the arrangement of the electrode bottom layer, the thickness of the front electrode can be effectively controlled, and the stability of the chip type thin film resistance network bonded to a circuit board through a gold bonding wire is further guaranteed;
after the passivation layer is obtained, the passivation layer is subjected to stabilization treatment, so that the stable adjustment of the absolute stability coefficient of the adjusting sheet type thin film resistor network can be realized; the damage to the film layer is reduced by adopting a laser interruption mode, and the heat treatment is carried out under specific conditions after the rough adjustment, so that the internal stress of the resistor individual can be eliminated, and the stability during the fine adjustment is ensured;
the absolute accuracy of the resistor of the obtained chip thin film resistor network reaches +/-0.05%, and the temperature coefficient reaches +/-5 multiplied by 10-6The relative temperature coefficient reaches +/-2 multiplied by 10-6The relative precision of the K is up to plus or minus 0.02 percent
While there have been shown and described what are at present considered the fundamental principles and essential features of the invention and its advantages, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (8)
1. A chip type thin film resistor network comprises a ceramic substrate, wherein a resistor film layer is sputtered on the front surface of the ceramic substrate and is a nickel-chromium alloy film, and the resistor film layer is cut into a plurality of resistor individuals by laser scribing;
the barrier layer is a sputtering tungsten titanium film layer, the bottom layer of the electrode is a sputtering gold layer, and the surface layer of the electrode is an electroplating gold layer; the thickness sum of the bottom layer and the surface layer of the electrode is not less than 3 mu m, and the thickness of the sputtering gold layer is less than 1 mu m;
the passivation layer is obtained by evaporating silicon dioxide through electron beams, and the thickness of the passivation layer is not less than 1 mu m.
2. The chip thin film resistor network of claim 1, wherein the ceramic substrate with the resistor film layer is designed to obtain a plurality of resistor network units consisting of a plurality of individual resistors, namely the chip thin film resistor network, on the premise that the target resistance of the chip thin film resistor network is known; the method specifically designs the individual resistors and the figures, positions and sizes of corresponding electrodes in the chip thin film resistor network, and calculates the initial sheet resistance of the resistor network unit to enable the obtained initial sheet resistance to be close to a target resistance value.
3. The chip thin film resistor network of claim 2, wherein different resistors in one resistor network unit have different resistance values or have different resistance values with large span.
4. The chip thin film resistor network of claim 1, wherein the chip thin film resistor network is stabilized after processing the passivation layer and adjusting the absolute temperature coefficient of the chip thin film resistor network to ± 5 x 10-6/K；
The stabilizing treatment is carried out at a temperature of 290 ℃ and 400 ℃ for 2-4 hours.
5. The chip thin film resistor network as claimed in claim 4, wherein the chip thin film resistor network sequentially performs coarse tuning and fine tuning on the initial resistance value by laser interruption, and performs heat treatment at 170 ℃ for 96 hours after the coarse tuning and before the fine tuning.
6. The chip thin film resistor network of claim 5, wherein the relative temperature coefficient of the chip thin film resistor network after fine tuning reaches ± 2 x 10-6and/K, the relative precision reaches +/-0.02%.
7. The chip thin film resistor network as claimed in claim 1, wherein the chip thin film resistor network is bonded to the circuit board by gold bonding wires.
8. The chip resistor network of claim 1, wherein the resistor units and the front electrodes are on the same surface of the ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010875771.0A CN112038026A (en) | 2020-08-27 | 2020-08-27 | Chip type thin film resistor network |
Applications Claiming Priority (1)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823020A (en) * | 2022-05-23 | 2022-07-29 | 贝迪斯电子有限公司 | Anti-surge chip resistor and manufacturing method thereof |
| CN114851352A (en) * | 2022-05-23 | 2022-08-05 | 松山湖材料实验室 | Resistance heating element and method of manufacturing the same |
| CN116705442A (en) * | 2023-05-12 | 2023-09-05 | 贝迪斯电子有限公司 | Chip type film resistor network and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1211669A (en) * | 1969-07-04 | 1970-11-11 | Corning Glass Works | Discontinuous thin film multi-stable state resistors |
| CN101533693A (en) * | 2009-03-16 | 2009-09-16 | 广州翔宇微电子有限公司 | Microwave film resistor, microwave film resistor network module and manufacturing method thereof |
| CN102314978A (en) * | 2011-06-24 | 2012-01-11 | 贵州大学 | High-performance thin film resistor and preparation method thereof |
| CN107331487A (en) * | 2017-06-20 | 2017-11-07 | 华南理工大学 | It is a kind of for TaN film resistors of hot environment and preparation method thereof |
| CN209168842U (en) * | 2018-12-19 | 2019-07-26 | 贝迪斯电子有限公司 | A kind of high temperature plate type thin film resistor |
| CN212587273U (en) * | 2020-08-27 | 2021-02-23 | 贝迪斯电子有限公司 | Chip type thin film resistor network |
-
2020
- 2020-08-27 CN CN202010875771.0A patent/CN112038026A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1211669A (en) * | 1969-07-04 | 1970-11-11 | Corning Glass Works | Discontinuous thin film multi-stable state resistors |
| CN101533693A (en) * | 2009-03-16 | 2009-09-16 | 广州翔宇微电子有限公司 | Microwave film resistor, microwave film resistor network module and manufacturing method thereof |
| CN102314978A (en) * | 2011-06-24 | 2012-01-11 | 贵州大学 | High-performance thin film resistor and preparation method thereof |
| CN107331487A (en) * | 2017-06-20 | 2017-11-07 | 华南理工大学 | It is a kind of for TaN film resistors of hot environment and preparation method thereof |
| CN209168842U (en) * | 2018-12-19 | 2019-07-26 | 贝迪斯电子有限公司 | A kind of high temperature plate type thin film resistor |
| CN212587273U (en) * | 2020-08-27 | 2021-02-23 | 贝迪斯电子有限公司 | Chip type thin film resistor network |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114823020A (en) * | 2022-05-23 | 2022-07-29 | 贝迪斯电子有限公司 | Anti-surge chip resistor and manufacturing method thereof |
| CN114851352A (en) * | 2022-05-23 | 2022-08-05 | 松山湖材料实验室 | Resistance heating element and method of manufacturing the same |
| CN114851352B (en) * | 2022-05-23 | 2023-11-28 | 松山湖材料实验室 | Resistance heating element and method for manufacturing same |
| CN116705442A (en) * | 2023-05-12 | 2023-09-05 | 贝迪斯电子有限公司 | Chip type film resistor network and manufacturing method thereof |
| CN116705442B (en) * | 2023-05-12 | 2024-03-19 | 贝迪斯电子有限公司 | Chip type film resistor network and manufacturing method thereof |
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