GB1211669A - Discontinuous thin film multi-stable state resistors - Google Patents
Discontinuous thin film multi-stable state resistorsInfo
- Publication number
- GB1211669A GB1211669A GB33736/69A GB3373669A GB1211669A GB 1211669 A GB1211669 A GB 1211669A GB 33736/69 A GB33736/69 A GB 33736/69A GB 3373669 A GB3373669 A GB 3373669A GB 1211669 A GB1211669 A GB 1211669A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- films
- resistance
- thin film
- discontinuous thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 title abstract 5
- 239000010408 film Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000002241 glass-ceramic Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract 1
- 229920003023 plastic Polymers 0.000 abstract 1
- 239000004033 plastic Substances 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 239000004408 titanium dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
- H01C17/262—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by electrolytic treatment, e.g. anodic oxydation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1013—Thin film varistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
1,211,669. Multi-stable resistors. CORNING GLASS WORKS. 4 July, 1969, No. 33736/69. Heading H1K. [Also in Division C7] A discontinuous thin film multi-stable resistor comprises, on a dielectric substrate 12, a plurality of electrically conductive discontinuous thin films 20, 24 connected in parallel, each film having a pair of distinct resistance states, one being a low resistance and the other a high resistance state, the resistor switching from low to high resistance at a given potential and from high to low resistance at a different given potential. The thin films are made of metal, such as gold, covered with a barrier layer 22, 26 of a material such as barium oxide, silicon dioxide, tantalum pentoxide or titanium dioxide to stabilize the layer characteristics. Each film in a parallel network has a different switching potential and a different open circuit resistance, the film having the highest open circuit resistance not being permitted to switch to its high resistance state to afford overload protection for the other films. Connection to the films is made by electrodes 10 of gold, silver, copper, platinum or tantalum, deposited on the substrate which is of glass, alumina, plastics or glass-ceramic. Both electrodes and films are formed by evaporation or sputtering or alternatively, a thicker film is deposited on the substrate and later anodized to form a discontinuous thin film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US716630A US3474305A (en) | 1968-03-27 | 1968-03-27 | Discontinuous thin film multistable state resistors |
| GB33736/69A GB1211669A (en) | 1969-07-04 | 1969-07-04 | Discontinuous thin film multi-stable state resistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB33736/69A GB1211669A (en) | 1969-07-04 | 1969-07-04 | Discontinuous thin film multi-stable state resistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1211669A true GB1211669A (en) | 1970-11-11 |
Family
ID=10356800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33736/69A Expired GB1211669A (en) | 1968-03-27 | 1969-07-04 | Discontinuous thin film multi-stable state resistors |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1211669A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2231588A (en) * | 1989-05-02 | 1990-11-21 | Minnesota Mining & Mfg | Noble metal-polymer composites for use in microelectrode stimulation arrays |
| US5178957A (en) * | 1989-05-02 | 1993-01-12 | Minnesota Mining And Manufacturing Company | Noble metal-polymer composites and flexible thin-film conductors prepared therefrom |
| CN112038026A (en) * | 2020-08-27 | 2020-12-04 | 贝迪斯电子有限公司 | Chip type thin film resistor network |
-
1969
- 1969-07-04 GB GB33736/69A patent/GB1211669A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2231588A (en) * | 1989-05-02 | 1990-11-21 | Minnesota Mining & Mfg | Noble metal-polymer composites for use in microelectrode stimulation arrays |
| US5178957A (en) * | 1989-05-02 | 1993-01-12 | Minnesota Mining And Manufacturing Company | Noble metal-polymer composites and flexible thin-film conductors prepared therefrom |
| CN112038026A (en) * | 2020-08-27 | 2020-12-04 | 贝迪斯电子有限公司 | Chip type thin film resistor network |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4431882A (en) | Transparent capacitance membrane switch | |
| GB1296712A (en) | ||
| GB1141397A (en) | Improvements in and relating to resistors | |
| GB1202740A (en) | Film circuits | |
| US3267342A (en) | Electrical capacitor | |
| US3490055A (en) | Circuit structure with capacitor | |
| US3600652A (en) | Electrical capacitor | |
| US3918032A (en) | Amorphous semiconductor switch and memory with a crystallization-accelerating layer | |
| IE39514L (en) | Thin-film electrical circuit | |
| GB1232722A (en) | ||
| US4042293A (en) | Liquid crystal devices having diode characteristics | |
| US4204217A (en) | Transistor using liquid crystal | |
| GB1211669A (en) | Discontinuous thin film multi-stable state resistors | |
| JPH0545005B2 (en) | ||
| US2751477A (en) | Electrical resistive device | |
| JPS57100770A (en) | Switching element | |
| US4150879A (en) | Solid dry electrochromic display | |
| GB995972A (en) | Electrical resistor and method of producing it | |
| KR920006787A (en) | Liquid crystal display | |
| GB1141644A (en) | Electrical switching and memory devices | |
| GB900198A (en) | Display device | |
| GB1083154A (en) | Solid state switching arrangements | |
| JPS6433811A (en) | Transparent conductive film and its manufacture | |
| US4506193A (en) | Thin film electroluminescent display | |
| EP0095283A3 (en) | Memory device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |